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There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. We propose a concept of energy-efficient, ultralong, high-density data archiving based on optically active atomic-size defects in a radiation resistance material, silicon carbide (SiC) [1]. The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature-dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs. Furthermore, we demonstrate that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron-beam excitation.

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There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we propose a concept of energy-efficient, ultralong, high-density data archiving based on optically active atomic-size defects in a radiation resistance material, silicon carbide (SiC). The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature-dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs. Furthermore, we demonstrate that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron-beam excitation.

Experimental data in OriginPro

The integration of heterogeneous modular units for building large-scale quantum networks requires engineering mechanisms that allow a suitable transduction of quantum information. Magnon-based transducers are especially attractive due to their wide range of interactions and rich nonlinear dynamics, but most of the work to date has focused on linear magnon transduction in the traditional system composed of yttrium iron garnet and diamond, two materials with difficult integrability into wafer-scale quantum circuits. In this work, we present a different approach by utilizing wafer-compatible materials to engineer a hybrid transducer that exploits magnon nonlinearities in a magnetic microdisc to address quantum spin defects in silicon carbide. The resulting interaction scheme points to the unique transduction behavior that can be obtained when complementing quantum systems with nonlinear magnonics.

01 februari 2023, Item does not contain fulltext, BACKGROUND: Digital single-operator pancreatoscopy (DSOP)-guided lithotripsy is a novel treatment modality for pancreatic endotherapy, with demonstrated technical success in retrospective series of between 88 % and 100 %. The aim of this prospective multicenter trial was to systematically evaluate DSOP in patients with chronic pancreatitis and symptomatic pancreatic duct stones. METHODS: Patients with symptomatic chronic pancreatitis and three or fewer stones ≥ 5mm in the main pancreatic duct (MPD) of the pancreatic head or body were included. The primary end point was complete stone clearance (CSC) in three or fewer treatment sessions with DSOP. Current guidelines recommend extracorporeal shock wave lithotripsy (ESWL) for MPD stones > 5 mm. A performance goal was developed to show that the CSC rate of MPD stones using DSOP was above what has been previously reported for ESWL. Secondary end points were pain relief measured with the Izbicki pain score (IPS), number of interventions, and serious adverse events (SAEs). RESULTS: 40 chronic pancreatitis patients were included. CSC was achieved in 90 % of patients (36/40) on intention-to-treat analysis, after a mean (SD) of 1.36 (0.64) interventions (53 procedures in total). The mean (SD) baseline IPS decreased from 55.3 (46.2) to 10.9 (18.3). Overall pain relief was achieved in 82.4 % (28/34) after 6 months of follow-up, with complete pain relief in 61.8 % (21/34) and partial pain relief in 20.6 % (7/34). SAEs occurred in 12.5 % of patients (5/40), with all treated conservatively. CONCLUSION: DSOP-guided endotherapy is effective and safe for the treatment of symptomatic MPD stones in highly selected patients with chronic pancreatitis. It significantly reduces pain and could be considered as an alternative to standard ERCP techniques for MPD stone treatment in these patients.

Single photon emitters (SPE) are fundamental building blocks for future quantum technology applications. However, many approaches lack the required spatial placement accuracy and Si technology compatibility required for many of the envisioned applications. Here, we present a method to place single or few SPEs emitting in the telecom O-band1. The successful integration of these telecom quantum emitters into photonic structures such as micro-resonators, nanopillars and photonic crystals with sub-micrometer precision paves the way toward a monolithic, all-silicon-based semiconductor-superconductor quantum circuit for which this work lays the foundations. To achieve our goal, we employ home built AuSi liquid metal alloy ion sources (LMAIS) and an Orsay Physics CANION M31Z+ focused ion beam (FIB). Silicon-on-insulator substrates from different fabrication methods have been irradiated with Si++ 40 keV ions in a spot pattern of 6 to 500 ions per spot. For the analysis and confirmation of the fabrication of true SPEs a home build photo luminescence setup has been used. G-centers formed by the combination of two carbon atoms and a silicon atom with a zero phonon lines (ZPL) at 1278 nm have been created in carbon rich SOI wafers. In ultra clean SOI wafers W-centers, a tri-interstitial Si complex has been created with a ZPL at 1218 nm. The achieved lateral SPE placement accuracy is below 50 nm in both cases and the success rate of SPE formation is more than 50%. Finally, we give an overview on possible other applications and give an outlook on future projects and instrumentation developments. 1Hollenbach, M., Klingner, N., Jagtap, N.S. et al. Wafer-scale nanofabrication of telecom single-photon emitters in silicon. Nature Communications 13, 7683 (2022). https://doi.org/10.1038/s41467-022-35051-5

Single photon emitters (SPE) are the starting point and foundation for future photonic quantum technologies. We present the laterally controlled fabrication of single G and W centers in silicon that emit in the telecom O-band. We utilized home built gold-silicon liquid metal alloy ion sources (LMAIS) in a focused ion beam (FIB) system to perform mask-free implantation of 40 keV Si ions from 6 to 500 ions per spot. Analysis and confirmation of SPEs has been done in a home-build cryo-photoluminescence setup. We will demonstrate a success rate of more than 50% and upscaling to wafer-scale. We will also provide an insight and overview on the LMAIS technology and an outlook on other potential applications of FIB implantation.

The long-lived and optically addressable spin states of silicon vacancies (VSi) in 4H-SiC make them promising qubits for quantum communication and sensing. These color centers can be created in both the hexagonal (V1) and in the cubic (V2) local crystallographic environments of the 4H-SiC host. While the spin of the V2 center can be efficiently manipulated by optically detected magnetic resonance at room temperature, spin control of the V1 centers above cryogenic temperatures has been elusive. Here, we show that the dynamic strain of surface acoustic waves can overcome this limitation and efficiently excite magnetic resonances of V1 centers up to room temperature. Based on the width and temperature dependence of the acoustically induced spin resonances, we attribute them to transitions between spin sublevels in the excited state. The acoustic spin control of both V1 and V2 centers in their excited states opens new ways for applications in quantum technologies based on spin-optomechanics.

A review of single photon emitters in silicon based on ion-induced defects is provided. Fabrication methods and current state of the art are discussed.

Main recommendations Obesity is a chronic, relapsing, degenerative, multifactorial disease that is associated with many co-morbidities. The global increasing burden of obesity has led to calls for an urgent need for additional treatment options. Given the rapid expansion of bariatric endoscopy and bariatric surgery across Europe, the European Society of Gastrointestinal Endoscopy (ESGE) has recognized the need to formalize and enhance training in bariatric endoscopy and the endoscopic treatment of bariatric surgical adverse events. This manuscript represents the outcome of a formal Delphi process resulting in an official Position Statement of the ESGE and provides a framework to develop and maintain skills in bariatric endoscopy and the endoscopic treatment of bariatric surgical adverse events. This curriculum is set out in terms of the prerequisites prior to training, minimum number of procedures, the steps for training and quality of training, and how competence should be defined and evidenced before independent practice. 1 ESGE recommends that every endoscopist should have achieved competence in upper gastrointestinal endoscopy before commencing training in bariatric endoscopy and the endoscopic treatment of bariatric surgical adverse events. 2 Trainees in bariatric endoscopy and the endoscopic treatment of the complications of bariatric surgery should have basic knowledge of the definition, classification, and social impact of obesity, its pathophysiology, and its related co-morbidities. The recognition and management of gastrointestinal diseases that are more common in patients with obesity, along with participation in multidisciplinary teams where obese patients are evaluated, are mandatory. 3 ESGE recommends that competency in bariatric endoscopy and the endoscopic treatment of the complications of bariatric surgery can be learned by attending validated training courses on simulators initially, structured training courses, and then hands-on training in tertia

Aim: Slc26a9 is a member of the Slc26 multifunctional anion transporter family. Polymorphisms in Slc26a9 are associated with an increased incidence of meconium ileus and diabetes in cystic fibrosis patients. We investigated the expression of Slc26a9 in the murine pancreatic ducts, islets and parenchyma, and elucidated its role in pancreatic ductal electrolyte and fluid secretion and endocrine function. Methods: Pancreatic Slc26a9 and CFTR mRNA expression, fluid and bicarbonate secretion were assessed in slc26a9−/− mice and their age- and sex-matched wild-type (wt) littermates. Glucose and insulin tolerance tests were performed. Results: Compared with stomach, the mRNA expression of Slc26a9 was low in pancreatic parenchyma, 20-fold higher in microdissected pancreatic ducts than parenchyma, and very low in islets. CFTR mRNA was ~10 fold higher than Slc26a9 mRNA expression in each pancreatic cell type. Significantly reduced pancreatic fluid secretory rates and impaired glucose tolerance were observed in female slc26a9−/− mice, whereas alterations in male mice did not reach statistical significance. No significant difference was observed in peripheral insulin resistance in slc26a9−/− compared to sex- and aged-matched wt controls. In contrast, isolated slc26a9−/− islets in short term culture displayed no difference in insulin content, but a significantly reduced glucose-stimulated insulin secretion compared to age- and sex-matched wt islets, suggesting that the impaired glucose tolerance in the absence of Slc26a9 expression these is a pancreatic defect. Conclusions: Deletion of Slc26a9 is associated with a reduction in pancreatic fluid secretion and impaired glucose tolerance in female mice. The results underline the importance of Slc26a9 in pancreatic physiology.

Single photon emitters (SPE) are fundamental building blocks for future quantum technology applications. However, many ap- proach lack the required spatial placement accuracy and Si tech- nology compatibility required for many of the envisioned applica- tions. Here, we present a method to fabricate at will placed single or few SPEs emitting in the telecom O-band in Silicon [1] . The successful integration of these telecom quantum emitters into photonic structures such as micro-resonators, nanopillars and photonic crystals with sub-micrometer precision paves the way to- ward a monolithic, all-silicon-based semiconductor-supercon- ductor quantum circuit for which this work lays the foundations. To achieve our goal we employ home built AuSi liquid metal alloy ion sources (LMAIS) and an Orsay Physics CANION M31Z+ focused ion beam (FIB). Silicon-on-insulator substrates from different fabri- cation methods have been irradiated with a spot pattern. 6 to 500 Si2+ ions have been implanted per spot using an energy of 40 keV. For the analysis and confirmation of the fabrication of true SPEs a home build photo luminescence setup has been used. G-centers formed by the combination of two carbon atoms and a silicon atom are confirmed by measurements of zero phonon lines (ZPL) at the expected wave length of 1278 nm for the case of carbon rich SOI wafers. In the case of ultra clean SOI wafers and high ion fluxes emission from tri-interstitial Si complexes is observed. The SPE nature of these so called W-centers has also been confirmed by ZPL measurements at 1218 nm. The achieved lateral SPE placement accuracy is below 100 nm in both cases and the success rate of SPE formation is more than 50%. After a discus- sion of the formation statistic we also present an approach how our FIB based approach can be upscaled to wafer-scale nanofabrication of telecom SPEs compatible with complementary metal oxide semiconductor (CMOS) technology for very large scale integration (VLSI).

Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of an ensemble of telecom photon emitters in a two-dimensional array of silicon nanopillars. We developed a top-down nanofabrication method, enabling the production of thousands of individual nanopillars per square millimeter with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm G-center emission along individual pillars accompanied by improved brightness, compared to that of bulk silicon. These results open pathways to monolithically integrating single-photon emitters into a photonic platform.

Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures is advantageous to exploit their full potential for integrated photonic quantum technologies [1] [2]. Here, we show the integration of telecom photon emitters in a photonic platform consisting of silicon nanopillars. We developed a CMOS-compatible nanofabrication method, enabling the production of thousands of individual nanopillars per square millimetre with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm G-center emission along individual pillars accompanied by improved brightness, photoluminescence signal-to-noise ratio and photon extraction efficiency compared to that of bulk silicon. These results unlock clear pathways to monolithically integrating single-photon emitters into a photonic platform at a scale that matches the required pitch of quantum photonic circuits.

Single-photon sources are one of the elementary building blocks for photonic quantum information and optical quantum computing [1]. One of the upcoming challenges is the monolithic photonic integration and coupling of single-photon emission, reconfigurable photonic elements and single-photon detection on a silicon chip in a controllable manner. Particularly, fully integrated single-photon emitters on-demand are required for enabling a smart integration of advanced functionalities in on-chip quantum photonic circuits [2]. This work presents a mask-free nanofabrication method involving a quasi-deterministic creation of scalable extrinsic color centers in silicon emitting in the optical telecom O-band [3] on a commercial silicon-on-insulator platform using focused ion beam writing. We also show the local writing of an intrinsic color center in silicon, which is linked to a tri-interstitial complex and reveals quantum emission close to the telecom band [4]. The successful integration of these telecom quantum emitters into photonic structures such as micro-resonators, nanopillars [5] and photonic crystals with sub-micrometer precision paves the way toward a monolithic, all-silicon-based semiconductor-superconductor quantum circuit. [1]D. D. Awschalom et al.,Nature Photonics 12,516 (2018) [2]J. C. Adcock et al.,IEEE, 27, 2, (2021) [3]M. Hollenbach et al.,Optics Express 28,26111 (2020) [4]Y. Baron et al.,arXiv:2108.04283 (2021) [5]M. Hollenbach et al.,arXiv:2112.02680 (2021)

Indistinguishable single-photon sources at telecom wavelengths are the key photonic qubits for transmitting quantum information over long distances in standard optical fibers with minimal transmission losses and high fidelity. This enables secure quantum communication over the quantum internet and, in turn, a modular approach to quantum computing. The monolithic integration of single-photon sources with reconfigurable photonic elements and single-photon detectors in a silicon chip is a key enabling step toward demonstrating scalable quantum hardware such as quantum photonic integrated circuits (QPICs). Nowadays, nearly all the necessary components for QPICs are available such as superconducting single-photon detectors, low-loss photonic waveguides, delay lines, modulators, phase shifters, and low-latency electronics. Yet, the practical implementation of scalable quantum hardware has been largely hampered by the lack of on-chip single-photon emitters in silicon that can be created at desired locations on the nanoscale. Here, we demonstrate two complementary wafer-level protocols for the creation of single telecom-wavelength color centers in silicon with a probability exceeding 50%. Both approaches are fully compatible with current silicon technology and enable the scalability of millions of single telecom quantum emitters that are created at desired nanoscale positions on a silicon chip. These results unlock a clear pathway for industrial-scale QPICs.

Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of an ensemble of telecom photon emitters in a two-dimensional array of silicon nanopillars. We developed a top-down nanofabrication method, enabling the production of thousands of nanopillars per square millimeter with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm-G center emission along individual pillars accompanied by improved brightness compared to that of bulk silicon. These results unlock clear pathways to monolithically integrating single-photon emitters into a photonic platform at a scale that matches the required pitch of quantum photonic circuits.

Indistinguishable single-photon sources at telecom wavelengths are the key photonic qubits for transmitting quantum information over long distances in standard optical fibers with minimal transmission losses and high fidelity. This enables secure quantum communication over the quantum internet and, in turn, a modular approach to quantum computing. The monolithic integration of single-photon sources with reconfigurable photonic elements and single-photon detectors in a silicon chip is a key enabling step toward demonstrating scalable quantum hardware such as quantum photonic integrated circuits (QPICs). Nowadays, nearly all the necessary components for QPICs are available such as superconducting single-photon detectors, low-loss photonic waveguides, delay lines, modulators, phase shifters, and low-latency electronics. Yet, the practical implementation of scalable quantum hardware has been largely hampered by the lack of on-chip single-photon emitters in silicon that can be created at desired locations on the nanoscale. Here, we demonstrate two complementary wafer-scale protocols for the quasi-deterministic creation of single G and W telecom-wavelength color centers in silicon with a probability exceeding 50%. Both approaches are fully compatible with current silicon technology and enable the fabrication of single telecom quantum emitters at desired nanoscale positions on a silicon chip. These results unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.