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5. Silicon Carbon Nitride Thin Films Produced by Magnetron Reactive Sputtering Physical Vapour Deposition: Structural, Chemical and Mechanical Characterisation

Author

Fonds National de la Recherche” of Luxembourg, CRPGL, Ministère délégué à l’Enseignement Supérieur et à la Recherche” of France, Ivory Coast government, J. Ghanbaja, B. Assouar, Kouakou, P.; Laboratoire de Physique Fondamentale et Appliquée, UFR Sciences Fondamentales et Appliquées, Université Nangui Abrogoua, 02 BP 801 Abidjan 02, Yoboue, P.; Ecole Supérieure Africaine des Technologies de l’Information et de la Communication (ESATIC), Abidjan, Ouattara, B.; Laboratoire de Physique Fondamentale et Appliquée, UFR Sciences Fondamentales et Appliquées, Université Nangui Abrogoua, 02 BP 801 Abidjan 02, Hody, V.; C. R. P. Gabriel Lippmann, S. A. M., 41 rue du Brill, L-4422 Belvaux, Choquet, P.; C. R. P. Gabriel Lippmann, S. A. M., 41 rue du Brill, L-4422 Belvaux, Belmahi, M.; Institut Jean Lamour (IJL) CNRS UMR 7198, Université de Lorraine, Faculté des Sciences et Technologies, BP 239, F-54506 Vandoeuvre Cedex, Fonds National de la Recherche” of Luxembourg, CRPGL, Ministère délégué à l’Enseignement Supérieur et à la Recherche” of France, Ivory Coast government, J. Ghanbaja, B. Assouar, Kouakou, P.; Laboratoire de Physique Fondamentale et Appliquée, UFR Sciences Fondamentales et Appliquées, Université Nangui Abrogoua, 02 BP 801 Abidjan 02, Yoboue, P.; Ecole Supérieure Africaine des Technologies de l’Information et de la Communication (ESATIC), Abidjan, Ouattara, B.; Laboratoire de Physique Fondamentale et Appliquée, UFR Sciences Fondamentales et Appliquées, Université Nangui Abrogoua, 02 BP 801 Abidjan 02, Hody, V.; C. R. P. Gabriel Lippmann, S. A. M., 41 rue du Brill, L-4422 Belvaux, Choquet, P.; C. R. P. Gabriel Lippmann, S. A. M., 41 rue du Brill, L-4422 Belvaux, and Belmahi, M.; Institut Jean Lamour (IJL) CNRS UMR 7198, Université de Lorraine, Faculté des Sciences et Technologies, BP 239, F-54506 Vandoeuvre Cedex

Abstract

Amorphous silicon carbon nitride films were deposited on silicon and WC-Co substrates by magnetron reactive sputtering in Ar/N2 gas mixture with carbon and silicon targets. The influence of experimental parameters on the films morphological, structural and mechanical properties was studied. The general morphology of the film is observed by SEM and TEM. EDXS and FTIR were used to determine the film chemical composition and the nature of chemical bonding. It was observed that C≡N bonds and nitrogen percentage in the film are promoted when the substrate is biased. The role of an underlayer and the influence of its nature on the film adhesion on WC/Co substrates were also studied. In this case, nanoscratch tests showed that a SiNx thin film could be an appropriate underlayer.

Published
2017

6. Silicon Carbon Nitride Thin Films Produced by Magnetron Reactive Sputtering Physical Vapour Deposition: Structural, Chemical and Mechanical Characterisation

Author

Kouakou, P., Yoboue, P., Ouattara, B., Hody, V., Choquet, P., Belmahi, M., Kouakou, P., Yoboue, P., Ouattara, B., Hody, V., Choquet, P., and Belmahi, M.

Abstract

Amorphous silicon carbon nitride films were deposited on silicon and WC-Co substrates by magnetron reactive sputtering in Ar/N2 gas mixture with carbon and silicon targets. The influence of experimental parameters on the films morphological, structural and mechanical properties was studied. The general morphology of the film is observed by SEM and TEM. EDXS and FTIR were used to determine the film chemical composition and the nature of chemical bonding. It was observed that C≡N bonds and nitrogen percentage in the film are promoted when the substrate is biased. The role of an underlayer and the influence of its nature on the film adhesion on WC/Co substrates were also studied. In this case, nanoscratch tests showed that a SiNx thin film could be an appropriate underlayer.

Published
2017

8. Oxygen grafting and etching of hexatriacontane in late N2–O2 post-discharges

Author

Hody, V., Belmonte, T., Czerwiec, T., Henrion, G., and Thiebaut, J.M.

Subjects
*OXYGEN, *PLASMA etching, *PLASMA gases, *MICROWAVE plasmas
Abstract

Abstract: Treatments of the hexatriacontane at 330 K (HTC–C36H74) in late N2–O2 remote microwave plasmas under 400 Pa is presented in this work. Time evolutions of the mass of the HTC are reported as a function of the gas composition and correlation with the HTC compositions by chemical analyses is carried out. The nitrogen atoms alone have no significant effect on the hexatriacontane. On the contrary, oxygen late post-discharges can be as efficient as direct plasma treatments to etch the HTC. In N2–O2 post-discharges, grafting and etching occur during a single experiment. However, the role of the oxygen atoms seems to be strongly correlated with the functionalization of the HTC and not clearly with its etching. [Copyright &y& Elsevier]

Published
2006
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9. Modification of Hexatriacontane by O2–N2Microwave Post-Discharges

Author

Hody, V., Belmonte, T., Pintassilgo, C., Poncin-Epaillard, F., Czerwiec, T., Henrion, G., Segui, Y., and Loureiro, J.

Abstract

Etch rates of hexatriacontane (HTC) as high as ~10 mg s−1m−2in late O2post-discharge are obtained at 333 K where no significant UV nor VUV irradiation occurs. Introducing N2in the gas mixture helps control the ratio of O/O2densities, which is shown to play a key role in the functionalization or etching of the HTC. The oxygen atoms are required for any further modification of the HTC because they initiate the formation of the radical chains by abstraction of one hydrogen. O(3P) atoms do not contribute directly to break the alkane chain close to room temperature but they can functionalise it. O2is the important reactive species for the etching because of the role played by the peroxide groups on the scission of the hydrocarbon chains.Etch rates of hexatriacontane (HTC) as high as ~10 mg s−1m−2in late O2post-discharge are obtained at 333 K where no significant UV nor VUV irradiation occurs. Introducing N2in the gas mixture helps control the ratio of O/O2densities, which is shown to play a key role in the functionalization or etching of the HTC. The oxygen atoms are required for any further modification of the HTC because they initiate the formation of the radical chains by abstraction of one hydrogen. O(3P) atoms do not contribute directly to break the alkane chain close to room temperature but they can functionalise it. O2is the important reactive species for the etching because of the role played by the peroxide groups on the scission of the hydrocarbon chains.

Published
2006
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