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A new approach using focused electron beam induced deposition (FEBID) to deposit catalyst particles is reported for the synthesis of single crystalline silicon nanowires (SiNWs) grown by low pressure chemical vapor deposition (LPCVD). The FEBID deposited gold dot arrays fabricated from an acac-Au(III)-Me(2) precursor were investigated by AFM and EDX. The depositions were found to form a sharp tip and a surrounding halo and consist of only 10 at.% Au. However, SiNWs could be synthesized on the deposited catalyst using the vapor-liquid-solid (VLS) method with a mixture of 2% SiH(4) in He at 520 °C. NW diameters from 30 nm up to 150 nm were fabricated and the dependency of the NW diameter on the FEBID deposition time was observed. TEM analysis of the SiNWs revealed a [110] growth direction independent of the NW diameter. This new method provides a maskless and resistless approach for generating catalyst templates for SiNW synthesis on arbitrary surfaces.