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We report a new scanning nanomechanical noise microscopy platform enabling to both heat and acquire the fluctuations of mechanical nanostructures with nanometric resolution. We use this platform to image the thermally activated nanomechanical dynamics of a model system consisting of a $40\,\mathrm{nm}$ diameter single-defect nanowire, while scanning a localized heat source across its surface. We develop a thermal backaction model, which we use to demonstrate a close connection between the structure of the nanowire, its thermal response, its dissipation and its fluctuations. We notably show that the defect behaves as a single fluctuation hub, whose e-beam excitation yields a far off-equilibrium vibrational state, largely dominated by the quantum fluctuations of the heating source. Our platform is of interest for future quantitative investigation of fundamental nanoscale dynamical phenomena, and appears as a new playground for investigating quantum thermodynamics in the strongly dissipative regime and at room temperature., Comment: 10 pages, 4 figures

We propose a foundation model for soccer, which is able to predict subsequent actions in a soccer match from a given input sequence of actions. As a proof of concept, we train a transformer architecture on three seasons of data from a professional soccer league. We quantitatively and qualitatively compare the performance of this transformer architecture to two baseline models: a Markov model and a multi-layer perceptron. Additionally, we discuss potential applications of our model. We provide an open-source implementation of our methods at https://github.com/danielhocevar/Foundation-Model-for-Soccer.

We propose a dual-adatom diffusion-limited model for the growth of compound semiconductor nanowires via the vapor-liquid-solid or the vapour-solid-solid mechanisms. The growth is catalyzed either by a liquid or a solid nanoparticle. We validate the model using experimental data from the growth of InAs nanowires catalyzed by a gold nanoparticle in a molecular beam epitaxy reactor. Initially, we determine the parameters (diffusion lengths, flux to the seed, Kelvin effect) that describe the growth of nanowires under an excess of one of the two beams (for instance, group III or group V atoms). The diffusion-limited model calculates the growth rate resulting from the current of atoms reaching the seed. Our dual-adatom diffusion-limited model calculates for a compound semiconductor, the instantaneous growth rate resulting from the smallest current of the two types of atoms at a given time. We apply the model to analyze the length-radius dependence of our InAs nanowires for growth conditions covering the transition from the As-limited to the In-limited regime. Finally, the model also describes the complex dependence of the transition between both regimes on the nanowire radius and length. This approach is generic and can be applied to study the growth of any compound semiconductor nanowires.

Exploring the topology of electronic bands is a way to realize new states of matter with possible implications for information technology. Because bands cannot always be observed directly, a central question is how to tell that a topological regime has been achieved. Experiments are often guided by a prediction of a unique signal or a pattern, called "the smoking gun". Examples include peaks in conductivity, microwave resonances, and shifts in interference fringes. However, many condensed matter experiments are performed on relatively small, micron or nanometer-scale, specimens. These structures are in the so-called mesoscopic regime, between atomic and macroscopic physics, where phenomenology is particularly rich. In this paper, we demonstrate that the trivial effects of quantum confinement, quantum interference and charge dynamics in nanostructures can reproduce accepted smoking gun signatures of triplet supercurrents, Majorana modes, topological Josephson junctions and fractionalized particles. The examples we use correspond to milestones of topological quantum computing: qubit spectroscopy, fusion and braiding. None of the samples we use are in the topological regime. The smoking gun patterns are achieved by fine-tuning during data acquisition and by subsequent data selection to pick non-representative examples out of a fluid multitude of similar patterns that do not generally fit the "smoking gun" designation. Building on this insight, we discuss ways that experimentalists can rigorously delineate between topological and non-topological effects, and the effects of fine-tuning by deeper analysis of larger volumes of data., Comment: Data are available through Zenodo at DOI: 10.5281/zenodo.8349309

Metal deposition with cryogenic cooling is widely utilized in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a drawback arises when these films return to room temperature, as they tend to undergo dewetting. This issue is mitigated by capping the films with an amorphous layer. In this study, we examined the impact of different in-situ fabricated caps on the structural characteristics of Sn thin films deposited at 80 K on InSb substrates. Regardless of the type of capping, we observed that the films remained smooth upon returning to room temperature and were epitaxial on InSb in the cubic Sn ($\alpha$-Sn) phase. However, we noted a correlation between alumina capping with an electron beam evaporator and an increased presence of tetragonal Sn ($\beta$-Sn) grains. This suggests that heating from the alumina source may contribute to a partial phase transition in the Sn layer. The existence of the $\beta$-Sn phase induced superconducting behavior of the films by percolation effect. This study highlights the potential for modifying the structural properties of cryogenic Sn thin films through in-situ capping, paving the way for precise control in the production of superconducting Sn films for integration into quantum computing platforms.

Majorana zero modes, with prospective applications in topological quantum computing, are expected to arise in superconductor/semiconductor interfaces, such as $\beta$-Sn and InSb. However, proximity to the superconductor may also adversely affect the semiconductor's local properties. A tunnel barrier inserted at the interface could resolve this issue. We assess the wide band gap semiconductor, CdTe, as a candidate material to mediate the coupling at the lattice-matched interface between $\alpha$-Sn and InSb. To this end, we use density functional theory (DFT) with Hubbard U corrections, whose values are machine-learned via Bayesian optimization (BO) [npj Computational Materials 6, 180 (2020)]. The results of DFT+U(BO) are validated against angle resolved photoemission spectroscopy (ARPES) experiments for $\alpha$-Sn and CdTe. For CdTe, the z-unfolding method [Advanced Quantum Technologies, 5, 2100033 (2022)] is used to resolve the contributions of different $k_z$ values to the ARPES. We then study the band offsets and the penetration depth of metal-induced gap states (MIGS) in bilayer interfaces of InSb/$\alpha$-Sn, InSb/CdTe, and CdTe/$\alpha$-Sn, as well as in tri-layer interfaces of InSb/CdTe/$\alpha$-Sn with increasing thickness of CdTe. We find that 16 atomic layers (3.5 nm) of CdTe can serve as a tunnel barrier, effectively shielding the InSb from MIGS from the $\alpha$-Sn. This may guide the choice of dimensions of the CdTe barrier to mediate the coupling in semiconductor-superconductor devices in future Majorana zero modes experiments.

Topological superconductivity is expected to spur Majorana zero modes -- exotic states that are also considered a quantum technology asset. Fractional Josephson effect is their manifestation in electronic transport measurements, often under microwave irradiation. A fraction of induced resonances, known as Shapiro steps, should vanish, in a pattern that signifies the presence of Majorana modes. Here we report patterns of Shapiro steps expected in topological Josephson junctions, such as the missing first Shapiro step, or several missing odd-order steps. But our junctions, which are InAs quantum wells with Al contacts, are studied near zero magnetic field, meaning that they are not in the topological regime. We also observe other patterns such as missing even steps and several missing steps in a row, not relevant to topological superconductivity. Potentially responsible for our observations is rounding of not fully developed steps superimposed on non-monotonic resistance versus voltage curves, but several origins may be at play. Our results demonstrate that any single pattern, even striking, cannot uniquely identify topological superconductivity, and a multifactor approach is necessary to unambiguously establish this important phenomenon., Comment: Written using The Block Method. Data on Zenodo DOI: https://zenodo.org/record/6416083

We investigate the current-phase relations of Al/InAs-quantum well planar Josephson junctions fabricated using nanowire shadowing technique. Based on several experiments, we conclude that the junctions exhibit an unusually large second-order Josephson harmonic, the $\sin(2\varphi)$ term. First, superconducting quantum interference devices (dc-SQUIDs) show half-periodic oscillations, tunable by gate voltages as well as magnetic flux. Second, Josephson junction devices exhibit kinks near half-flux quantum in supercurrent diffraction patterns. Third, half-integer Shapiro steps are present in the junctions. Similar phenomena are observed in Sn/InAs quantum well devices. We perform data fitting to a numerical model with a two-component current phase relation. Analysis including a loop inductance suggests that the sign of the second harmonic term is negative. The microscopic origins of the observed effect remain to be understood. We consider alternative explanations which can account for some but not all of the evidence., Comment: Written using The Block Method. Data on Zenodo DOI: https://doi.org/10.5281/zenodo.6416083 v2: Added block "Non-identical negative and positive switching currents" and Figs.S4, S5. v3: Added Figs. 6, S6-S9, simulations with both inductive and second harmonic effects

More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of materials themselves. An important type of device is a Josephson junction based on the proximity effect between a quantum material and a superconductor, useful for fundamental research as well as for quantum and other technologies. When both junction contacts are placed on the same surface, such as a two-dimensional material, the junction is called ``planar". One outstanding challenge is that not all materials are amenable to the standard planar junction fabrication. The device quality, rather than the intrinsic characteristics, may be defining the results. Here, we introduce a technique in which nanowires are placed on the surface and act as a shadow mask for the superconductor. The advantages are that the smallest dimension is determined by the nanowire diameter and does not require lithography, and that the junction is not exposed to chemicals such as etchants. We demonstrate this method with an InAs quantum well, using two superconductors - Al and Sn, and two semiconductor nanowires - InAs and InSb. The junctions exhibit critical current levels consistent with transparent interfaces and uniform width. We show that the template nanowire can be operated as a self-aligned electrostatic gate. Beyond single junctions, we create SQUIDs with two gate-tunable junctions. We suggest that our method can be used for a large variety of quantum materials including van der Waals layers, topological insulators, Weyl semimetals and future materials for which proximity effect devices is a promising research avenue., Comment: Written using The Block Method. Data on Zenodo DOI: https://doi.org/10.5281/zenodo.6416083

What kind of questions about human mobility can computational analysis help answer? How to translate the findings into anthropology? We analyzed a publicly available data set of road traffic counters in Slovenia to answer these questions. The data reveals interesting information on how a nation drives, how it travels for tourism, which locations it prefers, what it does during the week and the weekend, and how its habits change during the year. We conducted the empirical analysis in two parts. First, we defined interesting traffic spots and designed computational methods to find them in a large data set. As shown in the paper, traffic counters hint at potential causes and effects in driving practices that we can interpret anthropologically. Second, we used clustering to find groups of similar traffic counters as described by their daily profiles. Clustering revealed the main features of road traffic in Slovenia. Using the two quantitative approaches, we outline the general properties of road traffic in the country and identify and explain interesting outliers. We show that quantitative data analysis only partially answers anthropological questions, but it can be a valuable tool for preliminary research. We conclude that open data are a useful component in an anthropological analysis and that quantitative discovery of small local events can help us pinpoint future fieldwork sites., Comment: 17 pages, 7 figures

We investigate the dynamics of the well-known RSK bijection on permutations when iterated on various reading words of the recording tableau. In the setting of the ordinary (row) reading word, we show that there is exactly one fixed point per partition shape, and that it is always reached within two steps from any starting permutation. We also consider the modified dynamical systems formed by iterating RSK on the column reading word and the reversed reading word of the recording tableau. We show that the column reading word gives similar dynamics to the row reading word. On the other hand, for the reversed reading word, we always reach either a 2-cycle or fixed point after two steps. In fact, we reach a fixed point if and only if the shape of the initial tableau is self-conjugate.

We study bottom-up grown semiconductor indium antimonide nanowires that are coated with shells of tin. The shells are uniform in thickness. The interface between Sn and InSb is abrupt and without interdiffusion. Devices for transport are prepared by in-situ shadowing of nanowires using nearby nanowires as well as flakes, resulting in etch-free junctions. Tin is found to induce a hard superconducting gap in the range 600-700 micro-eV. Superconductivity persists up to 4 T in magnetic field. A tin island exhibits the coveted two-electron charging effect, a hallmark of charge parity stability. The findings open avenues for superconducting and topological quantum circuits based on new superconductor-semiconductor combinations.

Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfaces of high crystalline quality and for the setting of functional properties such as photon emission, carrier mobility or piezoelectricity. In a nanowire axial heterostructure featuring a sharp interface, strain is set by the materials lattice mismatch and the nanowire radius. Here, we show that introducing a graded interface in nanowire heterostructures offers an additional parameter to control strain. For a given interface length and lattice mismatch, we first derive theoretically the maximum nanowire radius below which coherent growth is possible. We validate these findings by growing and characterizing various In(Ga)As/GaAs nanowire heterostructures with graded interfaces. Furthermore, we perform a complete chemical and structural characterization of the interface by combining energy-dispersive X-ray spectroscopy and high resolution transmission electron microscopy. In the case of coherent growth, we directly observe that the mismatch strain relaxes elastically on the side walls of the nanowire around the interface area, while the core of the nanowire remains partially strained. Moreover, our experimental data show good agreement with finite element calculations. This analysis confirms in particular that mechanical strain is largely reduced by interface grading. Overall, our work extends the parameter space for the design of nanowire heterostructures, thus opening new opportunities for nanowire optoelectronics., Comment: 8 pages, 6 figures

Quantum dots are gate-defined within InSb nanowires, in proximity to NbTiN superconducting contacts. As the coupling between the dot and the superconductor is increased, the odd-parity occupations become non-discernible (erased) both above and below the induced superconducting gap. Above the gap, conductance in the odd Coulomb valleys increases until the valleys are lifted. Below the gap, Andreev bound states undergo quantum phase transitions to singlet ground states at odd occupancy. We observe that the apparent erasure of odd-parity regimes coincides at low-bias and at high-bias. This observation is reproduced in numerical renormalization group simulations, and is explained qualitatively by a competition between Kondo temperature and the induced superconducting gap. In the erased odd-parity regime, the quantum dot exhibits transport features similar to a finite-size Majorana nanowire, drawing parallels between even-odd dot occupations and even-odd one-dimensional subband occupations.

We perform tunneling measurements on indium antimonide nanowire/superconductor hybrid devices fabricated for the studies of Majorana bound states. At finite magnetic field, resonances that strongly resemble Majorana bound states, including zero-bias pinning, become common to the point of ubiquity. Since Majorana bound states are predicted in only a limited parameter range in nanowire devices, we seek an alternative explanation for the observed zero-bias peaks. With the help of a self-consistent Poission-Schr\"odinger multiband model developed in parallel, we identify several families of trivial subgap states which overlap and interact, giving rise to a crowded spectrum near zero energy and zero-bias conductance peaks in experiments. These findings advance the search for Majorana bound states through improved understanding of broader phenomena found in superconductor-semiconductor systems., Comment: In this modified version, we made small changes and added detailed device information. All changes are in red text. All original data can be found at Zenodo:https://doi.org/10.5281/zenodo.5793360