533 results on '"Hobart, Karl D."'
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2. PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates
3. Detecting defects that reduce breakdown voltage using machine learning and optical profilometry
4. Using machine learning with optical profilometry for GaN wafer screening
5. Experimental Observation of Localized Interfacial Phonon Modes
6. Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management
7. Thermal Conductance across beta-Ga2O3-diamond Van der Waals Heterogeneous Interfaces
8. Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability
9. Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy
10. Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques
11. Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond
12. PtOx Schottky Contacts on Degenerately Doped $$\left( {\overline{2}01} \right)$$ β-Ga2O3 Substrates
13. Process Optimization for Selective Area Doping of GaN by Ion Implantation
14. Contributors
15. Reduced-stress nanocrystalline diamond films for heat spreading in electronic devices
16. Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance
17. Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3.
18. PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates.
19. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging
20. Improving vertical GaN p-n diode performance with room temperature defect mitigation
21. Experimental determination of critical thickness limitations of (010)β -(AlxGa1−x)2O3 heteroepitaxial films
22. Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
23. Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond.
24. Study of anode doping and avalanche in foundry compatible 1.2kV vertical GaN PiN diodes
25. Towards Controlled Transfer of (001) β-Ga2O3 to (0001) 4H-SiC Substrates
26. (Invited) NiO/ β-(Al x Ga1-x )2O3 /Ga2O3 Heterojunction Lateral Rectifiers with Reverse Breakdown Voltage > 7kV
27. Electrothermal performance of AlGaN/GaN lateral transistors with >10 μm thick GaN buffer on 200 mm diameter engineered substrates
28. Optical characterization and thermal properties of CVD diamond films for integration with power electronics
29. Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging.
30. Experimental determination of critical thickness limitations of (010) β-(AlxGa1−x)2O3 heteroepitaxial films.
31. Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices
32. Effect of GaN/AlGaN buffer thickness on the electrothermal performance of AlGaN/GaN HEMTs on engineered substrates
33. Design, Packaging, and Empirical Characterization of 1 kV Vertical GaN P-N Diode
34. Novel Co‐doping Moiety to Achieve Enhanced P‐type doping in GaN by Ion Implantation
35. Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices
36. Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties
37. Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance
38. Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation.
39. Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates.
40. Thermal etching of nanocrystalline diamond films
41. Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations
42. Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility
43. A Simple Edge Termination Design for Vertical GaN P-N Diodes
44. Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates
45. Defect reduction in MBE-grown AlN by multicycle rapid thermal annealing
46. Impact of Anode Doping on Avalanche in Vertical GaN Pin Diodes with Hybrid Edge Termination Design
47. Using Data Science and Machine Learning to Predict the Failure Rate of Pin Diodes
48. AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices
49. Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination
50. Characterization and Modeling of a 1.3 kV Vertical GaN Diode
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