171 results on '"Hobart, K. D."'
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2. Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach
3. Mechanics of relaxing SiGe islands on a viscous glass
4. High quality AIN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy
5. Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides
6. Diamond Seed Size and the Impact on Chemical Vapor Deposition Diamond Thin Film Properties
7. Improved GaN Homo-Junction, Ultraviolet, Light-Emitting Diodes Grown on Step-Free 4H-SiC Mesas
8. Triple Stack Bonding for High Voltage Si Devices
9. Fabrication Techniques for Thin-Film Silicon Layer Transfer
10. Creating Thin-Film Silicon on Flexible Substrates using Adhesive Bonding and Wet Etching
11. Relaxed SiGe Layers with High Ge Content by Compliant Substrates
12. Relaxed SiGe Layers with High Ge Content by Compliant Substrates
13. Relaxation of a Strained Elastic Film on a Viscous Layer
14. Full thermal characterization of AlGaN/GaN high electron mobility transistors on silicon, silicon carbide, and diamond substrates using a reverse modeling approach.
15. Correlation of the Spatial Variation of Single-Event Transient Sensitivity With Thermoreflectance Thermography in ${\text {Al}}_{x} {\text {Ga}}_{1-x}$ N/GaN HEMTs
16. Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes.
17. Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates.
18. Buckling suppression of SiGe islands on compliant substrates.
19. Directional diffusion and void formation at a Si (001) bonded wafer interface.
20. Strain relaxation of SiGe islands on compliant oxide.
21. Comparison of Single Event Transients in AlGaN/GaN Schottky-Gate HEMTs Using Four Sources for Charge Injection
22. Universal conformal ultrathin dielectrics on epitaxial graphene enabled by a graphene oxide seed layer
23. Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al0.3Ga0.7N/GaN HEMTs
24. Impact of 2 MeV Proton Irradiation on the Large-Signal Performance of Ka-Band GaN HEMTs
25. Effect of Surface Passivation and Substrate on Proton Irradiated AlGaN/GaN HEMT Transport Properties
26. Effect of Surface Morphology on Diode Performance in Vertical GaN Schottky Diodes
27. NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices
28. Nanocrystalline Diamond Integration with III-Nitride HEMTs
29. Nanomechanical Analysis of Polydimethylglutarimide Based Lift Off Resist Used for Temporary Bonding and Film Transfers
30. (Invited) Improved Vertical GaN Diodes with Mg Ion Implanted Junction Termination Extension
31. (Invited) Electrothermal Performance Optimization of III-Nitride HEMTs Capped with Nanocrystalline Diamond
32. Hyperspectral Electroluminescence Characterization of OFF-State Device Characteristics in Proton Irradiated High Voltage AlGaN/GaN HEMTs
33. Editors' Choice—On the Radiation Tolerance of AlGaN/GaN HEMTs
34. Improved Vertical GaN Schottky Diodes with Ion Implanted Junction Termination Extension
35. A Comparison of Single-Event Transients in Pristine and Irradiated ${{\rm Al}_{0.3}}{{\rm Ga}_{0.7}}{{\rm N}/{\rm GaN}}$HEMTs using Two-Photon Absorption and Heavy Ions
36. Correlation of the Spatial Variation of Single-Event Transient Sensitivity With Thermoreflectance Thermography in \text Alx {\text {Ga}}1-x N/GaN HEMTs.
37. (Invited) Vertical GaN p-i-n Diodes Formed by Mg Ion Implantation
38. (Invited) Radiation-Induced Defect Mechanisms in GaN HEMTs
39. (Invited) Temporary Bonding with Polydimethylglutarimide for Residue-Free Layer Transfer and 3-D Integration
40. (Invited) Failure Mechanisms in AlGaN/GaN HEMTs Irradiated with 2MeV Protons
41. Temporary Bonding with Polydimethylglutarimide Based Lift Off Resist as a Layer Transfer Platform
42. NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices.
43. Nanocrystalline Diamond Integration with III-Nitride HEMTs.
44. Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H–SiC Epitaxial Layers
45. Medium Voltage Hybrid Si IGBT/SiC JBS Diode Module Development
46. Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC
47. Dynamics of Forward Voltage Drift in 4H-SiC PiN Diodes
48. Nanocrystalline Diamond for near Junction Heat Spreading in GaN Power HEMTs
49. Improved Passivation Techniques for AlGaN/GaN Hemts
50. Reliability of GaN HEMTs: Electrical and Radiation-Induced Failure Mechanism
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