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We previously developed a large-scale genome restructuring technology called the TAQing system. It can induce genomic rearrangements by introducing transient and conditional formation of DNA double-strand breaks (DSBs) via heat activation of a restriction enzyme TaqI, which can cleave DNA at 5'-TCGA-3' sequences in the genome at higher temperatures (37-42°C). Such heat treatment sometimes confers lethal damage in certain plant species and TaqI cannot induce rearrangements in AT-rich regions. To overcome such problems we developed an extended TAQing (Ex-TAQing) system, which enables the use of a wider range of restriction enzymes active at standard plant-growing temperatures. We established the Ex-TAQing system using MseI that can efficiently cleave DNA at room temperature (at temperatures ranging from 22 to 25°C) and the 5'-TTAA-3' sequence which is highly abundant in the Arabidopsis genome. A synthetic intron-spanning MseI gene, which was placed downstream of a heat-shock-inducible promoter, was conditionally expressed upon milder heat treatment (33°C) to generate DSBs in Arabidopsis chromosomes. Genome resequencing revealed various types of genomic rearrangements, including copy number variations, translocation and direct end-joining at MseI cleavage sites. The Ex-TAQing system could induce large-scale rearrangements in diploids more frequently (17.4%, n = 23) than the standard TAQing system. The application of this system to tetraploids generated several strains with chromosomal rearrangements associated with beneficial phenotypes, such as high salinity stress tolerance and hypersensitivity to abscisic acid. We have developed the Ex-TAQing system, allowing more diverse patterns of genomic rearrangements, by employing various types of endonucleases and have opened a way to expand the capacity for artificial genome reorganization.

The ATP1A2 coding α2 subunit of Na,K‐ATPase, which is predominantly located in astrocytes, is a causative gene of familial hemiplegic migraine type 2 (FHM2). FHM2 model mice (Atp1a2tmCKwk/+) are susceptible to cortical spreading depression (CSD), which is profoundly related to migraine aura and headache. However, astrocytic properties during CSD have not been examined in FHM2 model mice. Using Atp1a2tmCKwk/+ crossed with transgenic mice expressing G‐CaMP7 in cortical neurons and astrocytes (Atp1a2+/−), we analyzed the changes in Ca2+ concentrations during CSD. The propagation speed of Ca2+ waves and the percentages of astrocytes with elevated Ca2+ concentrations in Atp1a2+/− were higher than those in wild‐type mice. Increased percentages of astrocytes with elevated Ca2+ concentrations in Atp1a2+/− may contribute to FHM2 pathophysiology., Atp1a2 +/ − is a model mouse of familial hemiplegic migraine type 2. The numbers of astrocytes with elevated Ca2+ concentrations in Atp1a2 +/ − (11.0 ± 2.8 astrocytes) were larger than those in wild‐type mice (5.7 ± 2.5 astrocytes) after induction of cortical spreading depression (which is closely associated with migraine) by application of KCl.

The structures of K or Cs alkaline-treated Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells are developed, and their carrier recombination rates are scrutinized. It is determined that short-circuit current density (JSC) is enhanced (decreased optical loss), when ZnS(O,OH), (Cd,Zn)S, and Zn0.8Mg0.2O buffers with a large band gap energy (Eg) are applied as a replacement of CdS buffer. The JSC is further increased, reducing the optical loss more, when Zn0.9Mg0.1O:B is used as the transparent conductive oxide (TCO) with a larger Eg and lower free carrier absorption than those of ZnO:Al. Furthermore, all carrier recombination rates throughout the devices with K or Cs treatment, especially at the buffer/absorber interface and in the quasi neutral region, are reduced, thereby reducing open-circuit voltage deficit (VOC,def), well consistent with the simulated ones. The carrier recombination rate at the buffer/absorber interface is further decreased, when the CdS and (Cd,Zn)S buffers, deposited by chemical bath deposition, are applied, leading to the greater reduction of the VOC,def and the high conversion efficiency (η) of about 21%. Under the trade-off between VOC,def and optical loss, the highest η of 22.6% is attained with the lowest power loss (or the highest VOC × JSC) in the Cs-treated Cd-free CIGSSe solar cell with an optimized structure of glass/Mo/CIGSSe/Zn0.8Mg0.2O/Zn0.9Mg0.1O:B, fabricated by the all-dry process, where the Zn0.8Mg0.2O buffer is prepared by the sputtering method. This occurs because the JSC is the highest attributable to the larger Eg of Zn0.8Mg0.2O buffer than those of the CdS and (Cd,Zn)S.

In plant stems, secondary vascular development is established through the differentiation of cylindrical vascular cambium, producing secondary xylem (wood) and phloem (bast), which have economic importance. However, there is a dearth of knowledge on the genetic mechanism underlying this process. NAC with Transmembrane Motif 1-like transcription factor 9 (NTL9) plays a central role in abiotic and immune signaling responses. Here, we investigated the role of NTL9 in vascular cambium development in Arabidopsis (Arabidopsis thaliana) inflorescence stems by identifying and characterizing an Arabidopsis phloem circular-timing (pct) mutant. The pct mutant exhibited enhanced vascular cambium formation following secondary phloem production. In the pct mutant, although normal organization in vascular bundles was maintained, vascular cambium differentiation occurred at an early stage of stem development, which was associated with increased expression of cambium-/phloem-related genes and enhanced cambium activity. The pct mutant stem phenotype was caused by a recessive frameshift mutation that disrupts the transmembrane (TM) domain of NTL9. Our results indicate that NTL9 functions as a negative regulator of cambial activity and has a suppressive role in developmental transition to the secondary growth phase in stem vasculature, which is necessary for its precise TM domain-mediated regulation.

In this article, the excellent properties of state-of-the-art Cd-free Cu(In,Ga)(Se,S)2 (CIGSSe) solar cells with Zn(O,S,OH) x /Zn0.8Mg0.2O double buffer layers, deposited by a combination of chemical bath deposition and atomic layer deposition techniques, are presented. By the replacement of conventional CdS buffer layers with this double buffer layer, the open-circuit voltage ( V oc) deficit of the devices could be significantly reduced, and V oc increased by approximately 15 mV. In addition, the fill factor and short-circuit current were also improved, increasing the device efficiency by approximately 0.5 absolute percent compared with devices with CdS buffers. The Cd-free double buffer layer improved the device efficiency regardless of the bandgap of the CIGSSe absorber. The minority carrier lifetime ( τ ) measured via time-resolved photoluminescence became longer, indicating that carrier recombination is mitigated using the double buffer layer. Based on the device parameters extracted by fitting the Suns– V oc characteristics to the double-diode model, the longer τ could be attributed to the decreased recombination rate in the space-charge region, rather than in the bulk and at the interface. The best performing cell was evaluated by a reliable third party, the National Institute of Advanced Industrial Science and Technology; this cell achieved a new world record efficiency of 23.35% for 1-cm2-sized thin-film polycrystalline solar cells. The device parameters of this cell are also discussed in this article.

Zn1−xMgxO:B (BZMO) films were deposited by metal organic chemical vapor deposition (MOCVD). Their optical and electrical properties were investigated for suitability as transparent conductive oxide (TCO) of the Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells. It is disclosed that with the increase in the [Mg]/([Mg] + [Zn]) of the BZMO up to 0.12 the optical band-gap energy (Eg) is increased to 3.52 eV, and the resistivity is reduced to about 3.1 × 10−3 Ω·cm owing to the increase in the Hall mobiltity. Moreover, the severe free-carrier absorption in the BZMO film is not observed. The BZMO is consequently appropriate as the TCO layer of the CIGSSe solar cells. The K-treated CIGSSe layers were applied as the absorbers of the solar cells. As a result, the 21.1%-efficient CIGSSe solar cell with a structure of Zn0.88Mg0.12O:B/CdS/CIGSSe/Mo/glass is obtained. In addition, the 20.2%-efficient Cd-free CIGSSe solar with a structure of Zn0.88Mg0.12O:B/Zn0.80Mg0.20O/CIGSSe/Mo/glass, fabricated by all-dry process, is realized with high short-circuit current density (JSC) of 39.7 mA/cm2. The high JSC is attributable to no optical loss in CdS buffer layer, no severe free carrier absorption, and the increased Eg of the BZMO layer.

Cd-free Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells with a structure of glass/Mo/CIGSSe/Zn1–xMgxO (buffer)/Zn1–xMgxO:Al (TCO), fabricated by an all dry process, are characterized using ultraviolet light ...

An efficiency of 22.9% for 1-cm2-sized Cu(In,Ga)(Se,S)2 solar cells has been independently verified, establishing a record device efficiency for thin-film polycrystalline solar cells. The main improvement in the solar cell device is due to a reduction in the deficit of the open-circuit voltage ( V oc), which is notably suppressed by modifying the absorber formation. This is presumably due to reduced defect density, as suggested by the enhanced photoluminescence performance. Such improvement in the absorber quality allowed for an opportunity to benefit from the effects of a wider absorber bandgap. The reverse saturation current density and V oc were significantly improved. Meanwhile, heavier alkali treatment on the absorber surface using cesium was adopted to further boost the device performance. As a result, the significant enhancements in V oc and fill factor led to the achievement of this record-breaking efficiency. These findings have been systematically reproduced and will be leveraged to improve the module performance of Solar Frontier's production in the near future.

Background Cortical spreading depression is thought to be the underlying mechanism of migraine aura. In 2006, three relatives having the point mutation E700K in ATP1A2 exon 15 were diagnosed with familial hemiplegic migraine 2 characterized by complicated forms of aura. Here, we generated a transgenic mouse model having the human E700K mutation in the Atp1a2 orthologous gene. Objective To investigate the characteristics of cortical spreading depression in a mouse model with E700K mutation in the Atp1a2. Methods Cortical spreading depression was induced by applying stepwise increases of KCl concentration or electrical stimulation intensity to C57BL/6J-Tg(Atp1a2*E700K)9151Kwk mice (Tg, both sexes) and corresponding wild-type animals. Under urethane anesthesia, the responsiveness and threshold to cortical spreading depression were examined and the distribution of c-Fos expression, a neuronal activity marker, was immunohistochemically determined. Results Overall, Tg mice showed significantly faster propagation velocity ( p Conclusion The effect of cortical spreading depression may be greater in E700K transgenic mice than that in wild-type animals, while the threshold for cortical spreading depression shows little change. Higher c-Fos expression in the amygdala may indicate alterations of the limbic system in Tg, suggesting an enhanced linkage between cortical spreading depression and amygdala connectivity in familial hemiplegic migraine 2 patients.

Astrocyte-microglia communication influences the onset and progression of central nervous system (CNS) disorders. In this study, we determined how chronic inflammation by activated astrocytes affected and regulated CNS functions in Sandhoff disease (SD), a CNS lysosomal storage disorder. SD triggers intense CNS inflammation such as microglial activation and astrogliosis. It is caused by mutation of the HEXB gene, which reduces β-hexosaminidase (Hex) enzymatic activity in lysosomes, leading to accumulation of the substrate GM2 ganglioside in neuronal cells. Hexb−/− mice display a phenotype similar to human patients that suffer from chronic inflammation characterized by activation of astrocytes and microglia. In Hexb−/− mice, tremors and loss of muscle coordination begins at ~12 weeks. Interestingly, we found that reactive astrocytes expressed adenosine A2A receptor in the cerebral cortices of Hexb−/− mice at the later inflammatory phase. In cultured astrocytes, expression of A2A receptor could be induced by astrocyte defined medium, and then the activation of the A2A receptor induced ccl2 expression. In Hexb−/− mice, inhibition of the A2A receptor antagonized by istradefylline decreased the number of activated microglial cells and inflammatory cytokines/chemokines at 13 weeks. Thus, the astrocytic A2A receptor is an important sensor that regulates microglial activation in the late phase of inflammation.

DNA double-strand break (DSB)-mediated genome rearrangements are assumed to provide diverse raw genetic materials enabling accelerated adaptive evolution; however, it remains unclear about the consequences of massive simultaneous DSB formation in cells and their resulting phenotypic impact. Here, we establish an artificial genome-restructuring technology by conditionally introducing multiple genomic DSBs in vivo using a temperature-dependent endonuclease TaqI. Application in yeast and Arabidopsis thaliana generates strains with phenotypes, including improved ethanol production from xylose at higher temperature and increased plant biomass, that are stably inherited to offspring after multiple passages. High-throughput genome resequencing revealed that these strains harbor diverse rearrangements, including copy number variations, translocations in retrotransposons, and direct end-joinings at TaqI-cleavage sites. Furthermore, large-scale rearrangements occur frequently in diploid yeasts (28.1%) and tetraploid plants (46.3%), whereas haploid yeasts and diploid plants undergo minimal rearrangement. This genome-restructuring system (TAQing system) will enable rapid genome breeding and aid genome-evolution studies., DNA double-strand break (DSB) leads to genome rearrangements with various genetic and phenotypic effects. Here, the authors develop a tool to induce large-scale genome restructuring by introducing conditional multiple DNA breaks, and produce various traits in yeast and Arabidopsis thaliana.

Development of Cd-free Cu(In,Ga)(S,Se)2 (CIGSSe)-based thin-film solar cells fabricated by an all-dry process is intriguing to minimize optical loss at a wavelength shorter than 520 nm owing to absorption of the CdS buffer layer and to be easily integrated into an in-line process for cost reduction. Cd-free CIGSSe solar cells are therefore prepared by the all-dry process with a structure of Zn0.9Mg0.1O:Al/Zn0.8Mg0.2O/CIGSSe/Mo/glass. It is demonstrated that Zn0.8Mg0.2O and Zn0.9Mg0.1O:Al are appropriate as buffer and transparent conductive oxide layers with large optical band gap energy values of 3.75 and 3.80 eV, respectively. The conversion efficiency (η) of the Cd-free CIGSSe solar cell without K-treatment is consequently increased to 18.1%. To further increase the η, the Cd-free CIGSSe solar cell with K-treatment is next fabricated and followed by posttreatment called the heat-light-soaking (HLS) + light-soaking (LS) process, including HLS at 110 °C followed by LS under AM 1.5G illumination. It is disclosed that the HLS + LS process gives rise to not only the enhancement of carrier density but also the decrease in the carrier recombination rate at the buffer/absorber interface. Ultimately, the η of the Cd-free CIGSSe solar cell with K-treatment prepared by the all-dry process is enhanced to the level of 20.0%.

New record efficiencies have been achieved on Cd-free Cu(In,Ga)(Se,S)2 thin-film photovoltaic submodules prepared by a two-step sulfurization after selenization process. Aperture area efficiencies of 19.2% and 19.8% were independently confirmed on a 30 cm × 30 cm submodule (841 cm2) and on a 7 cm × 5 cm minimodule (24.2 cm2), respectively. These achievements were brought about by transferring several key techniques, especially atomic layer deposited (Zn,Mg)O second buffer layer and K treatment of the absorber surface, from the fundamental study of small-area cell development. The former technique was applied to the submodule and both techniques were implemented into the minimodule. The (Zn,Mg)O second buffer layer increases transmittance of the window layer and improves junction quality resulting in the reduced interface recombination. The K treatment, which was developed by reference to the postdeposition treatment widely used in the co-evaporation process, significantly enhances open-circuit voltage and fill factor. Several material and device characterizations performed to illuminate the effects of the K treatment showed that increased free carrier concentration and reduced carrier recombination throughout the whole absorber film contributed to the improved performance. Contrary to the conventional postdeposition treatment in the co-evaporation process, significant depletion of Cu at the absorber surface was not observed, which can be attributed to S-rich circumstances of our absorber surface. The achievement of nearly 20% efficiency on the minimodule having identical structure to the production modules ensures further performance improvements in industrial Cu(In,Ga)(Se,S)2 modules in the near future.

A 19.5%-efficient Cu(In,Ga)(S,Se)2 (CIGSSe)-based solar cell is obtained by replacing traditional CdS/ZnO buffer layers with Cd0.75Zn0.25S/Zn0.79Mg0.21O buffer layers for increasing short-circuit current density because band-gap energies of Cd0.75Zn0.25S and Zn0.79Mg0.21O are wider than those of CdS and ZnO, respectively. This yields the increase in external quantum efficiency in a short wavelength range of approximately 320 to 550 nm. Moreover, difference of conduction band minimum (EC) between Zn1 − xMgxO:Al (transparent conductive oxide, TCO) layer and CIGSSe absorber is optimized by varying [Mg]/([Mg] + [Zn]), x. It is revealed that Zn1 − xMgxO:Al films with [Mg]/([Mg] + [Zn]) in a range of 0.10 to 0.12, enhancing Eg from 3.72 to 3.76 eV, are appropriate as TCO because of their enhanced mobility and decreased carrier density. Addition of 12% Mg into ZnO:Al to form Zn0.88Mg0.12O:Al as TCO layer effectively decreases surface carrier recombination and improves photovoltaic parameters, especially open-circuit voltage and fill factor. This is the first experimental proof of the concept for optimizing EC difference between TCO and absorber to minimize surface carrier recombination. Ultimately, conversion efficiency (η) of CIGSSe solar cell with alternative Cd0.75Zn0.25S/Zn0.79Mg0.21O/Zn0.88Mg0.12O:Al (TCO) layers is enhanced to 20.6%, owing to control of total EC alignment, which is higher η up to 12.6% relative as compared with the solar cell with traditional CdS/ZnO/ZnO:Al layers.

Influences of the surface treatments of Cu(In,Ga)(Se,S)2 (CIGSSe) thin films, which are KCN, HCl, or thiuorea treatments, were investigated by time-resolved photoluminescence (TRPL) and temperature dependent current density-voltage (J-V) characteristics of their solar cells. It is demonstrated that the KCN treatment optimized under 1 wt% leads to the significant increase in conversion efficiency (η) up to 19.21%. On the other hand, the η of the CIGSSe solar cells is in ranges of 13.70–15.51% and 9.86–10.70% with the HCl treatments (0.3–0.7 mol/L), and thiuorea treatments (0.5–1.5 mol/L), respectively, which are lower than 16.66% that of the reference solar cell without the surface treatment. According to TRPL measurements, the quality of near-surface CIGSSe is improved with the KCN treatment (1 wt%) owing to enhanced TRPL lifetimes, whereas that is deteriorated with the HCl and thiuorea treatments due to decreased TRPL lifetimes. In addition, according to the temperature-dependent J-V measurement, the interface recombination of the CIGSSe solar cell is decreased with the KCN treatment, while that of the CIGSSe solar cells is increased with the HCl and thiuorea treatments. Ultimately, 19.21%-efficient CIGSSe solar cell with the KCN treatment (1 wt%) at room temperature with the increased VOC of 0.692 V was obtained, which is around 15.3% relatively higher η than that of the solar cell without the surface treatment.

(Cd,Zn)S buffer layer and Zn1−xMgxO window layer were investigated to replace the traditional CdS buffer layer and ZnO window layer in Cu(In,Ga)(Se,S)2 (CIGSSe)-based solar cell. (Cd,Zn)S with band-gap energy (Eg) of approximately 2.6 eV was prepared by chemical bath deposition, and Zn1−xMgxO films with different [Mg]/([Mg] + [Zn]) ratios, x, were deposited by radio frequency magnetron co-sputtering of ZnO and MgO. The estimated optical Eg of Zn1−xMgxO films is linearly enhanced from 3.3 eV for pure ZnO (x = 0) to 4.1 eV for Zn0.6Mg0.4O (x = 0.4). The quality of the Zn1−xMgxO films, implied by Urbach energy, is severely deteriorated when x is above 0.211. Moreover, the temperature-dependent current density-voltage characteristics of the CIGSSe solar cells were conducted for the investigation of the heterointerface recombination mechanism. The external quantum efficiency of the CIGSSe solar cell with the (Cd,Zn)S buffer layer/Zn1−xMgxO window layer is improved in the wavelength range of 320–520 nm. Therefore, a gain in short-circuit current density up to about 5.7% was obtained, which is higher conversion efficiency of up to around 5.4% relative as compared with the solar cell with the traditional CdS buffer layer/ZnO window layer. The peak efficiency of 19.6% was demonstrated in CIGSSe solar cell with (Cd,Zn)S buffer layer and Zn1−xMgxO window layer, where x is optimized at 0.211. Copyright © 2017 John Wiley & Sons, Ltd.

Plant cells have acquired chloroplasts (plastids) with a unique genome (ptDNA), which developed during the evolution of endosymbiosis. The gene content and genome structure of ptDNAs in land plants are considerably stable, although those of algal ptDNAs are highly varied. Plant cells seem, therefore, to be intolerant of any structural or organizational changes in the ptDNA. Genome rearrangement functions as a driver of genomic evolutionary divergence. Here, we aimed to create various types of rearrangements in the ptDNA of Arabidopsis genomes using plastid-targeted forms of restriction endonucleases (pREs). Arabidopsis plants expressing each of the three specific pREs, i.e., pTaqI, pHinP1I, and pMseI, were generated; they showed the leaf variegation phenotypes associated with impaired chloroplast development. We confirmed that these pREs caused double-stranded breaks (DSB) at their recognition sites in ptDNAs. Genome-wide analysis of ptDNAs revealed that the transgenic lines exhibited a large number of rearrangements such as inversions and deletions/duplications, which were dominantly repaired by microhomology-mediated recombination and microhomology-mediated end-joining, and less by non-homologous end-joining. Notably, pHinP1I, which recognized a small number of sites in ptDNA, induced drastic structural changes, including regional copy number variations throughout ptDNAs. In contrast, the transient expression of either pTaqI or pMseI, whose recognition site numbers were relatively larger, resulted in small-scale changes at the whole genome level. These results indicated that DSB frequencies and their distribution are major determinants in shaping ptDNAs.

We propose a new solar cell that is highly suited for space applications, comprising a top InGaP/GaAs dual-junction solar cell mechanically-stacked on a bottom CuInGaSe solar cell. In principle, the performance of this triple-junction structure, named PHOENIX cell, can achieve a very high radiation resistance and can simultaneously provide high efficiencies. By adjusting current or voltage output of the bottom CIGS cell, the top InGaP/GaAs cell and the bottom CIGS cell can be connected in series or parallel, respectively. We fabricate three types PHOENIX prototypes, that is, those connected in series and in parallel, and a large device, and characterize their performances including radiation resistance. The initial performances of the prototype cells are not as high as those of conventional or inverted-metamorphic triple-junction cells due to an unoptimized subcell structure. However, a high radiation resistance of the cells is demonstrated for 1 MeV electron irradiation (fluence = 1×1015 cm−2). The remaining factors of I sc , V oc and P max of the prototype cells are larger than 0.9. The results obtained in this study prove the validity of the PHOENIX concept.

Gait disturbance is frequently observed in patients with movement disorders. In mouse models used for movement disorders, gait analysis is important behavioral test to determine whether the mice mimic the symptoms of patients. Motor deficits are often induced by stress when no spontaneous motor phenotype is observed in the mouse models. Therefore, gait analysis followed by stress loading would be a sensitive method for evaluating the motor phenotype in mouse models. However, researchers face the requirement of an expensive apparatus to obtain quantitative results automatically from gait analysis. For stress, stress loading by simple methods without expensive apparatuses required for electric shock and forced running is desirable. Therefore, we introduce a simple and low-cost protocol consisting of footprint analysis with paper and ink, hanging box test to evaluate motor function, and stress loading defined by restraint with a conical tube. The motor deficits of mice were successfully detected by this protocol.

Cd-free Cu(In,Ga)(S,Se)

Previously, an open-circuit voltage of 960 mV was reported on Se-free Cu(In,Ga)S 2 (CIGS) solar cell with a CdS buffer layer. In this paper, we report our latest progress toward 1000 mV on a Se-free Cu(In,Ga)S 2 solar cell with a Cd-free buffer layer. The highest open-circuit voltage of 973 mV was demonstrated by rapid thermal annealing and Zn 1 − x Mg x O buffer layer application.

World-record conversion efficiency of 15.5%, which is a number independently certified by an external accredited laboratory, was achieved on a pure-sulfide Cu(In,Ga)S2 (CIGS) thin-film solar cell fabricated by metal sputtering and H2S gas sulfurization. This is the highest conversion efficiency reported for pure-sulfide CIGS thin-film solar cells. We exceeded the limit of 15% efficiency thanks to the buffer layer optimization. The buffer layer consists of Cd-free materials, and the absorber was fabricated via a KCN-free process.

Open-circuit voltage ( $V_{{\rm oc}}$ ) of 960 mV on chalcopyrite solar cell was achieved by pure-sulfide Cu(In,Ga)S2 solar cell. Generally, high-performance Cu(In,Ga)S2 needs KCN-etching treatment to remove CuS layer; however, we were able to fabricate it without KCN-etching treatment. Our champion pure-sulfide Cu(In,Ga)S2 cell demonstrated the efficiency of 14.0%. In this paper, the latest results for high-performance pure-sulfide Cu(In,Ga)S2 cells will be presented.

Modification of the hetero-junction interface in Cd-free and all-dry process Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells by introducing the aging process for the bare CIGSSe films is demonstrated, ultimately achieving the highest conversion efficiency of 22.0%. In this article, two positive effects of the aging process are discussed. First, additional phases, such as Inx(O,S)y and Cu-deficient phases, are naturally formed on the CIGSSe surface. Second, unintentional segregation of Zn-rich particles at the (Zn,Mg)O/CIGSSe interface during the (Zn,Mg)O deposition is suppressed. These effects lead to the reduction of recombination at the hetero-junction interface and dramatic enhancement of performance for the Cd-free and all-dry process CIGSSe solar cells.

Mouse ultrasonic vocalizations (USVs) are studied in many fields of science. However, various noise and varied USV patterns in observed signals make complete automatic analysis difficult. We improve several methods to reduce noise, detect USV calls and automatically cluster USV calls. After reduction of noise and detection of USV calls, we consider USV calls as functional data and characterize them as USV functions with B-spline basis functions. For discontinuous USV calls, breakpoints in the USV functions are defined using multiple knots in the construction of the B-spline basis functions, and a hierarchical method is used to cluster the USV functions by shape. We finally show the performance of the proposed methods with USV data recorded for laboratory mice.

Development of Cd-free Cu(In,Ga)(S,Se)