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This paper reports on ionization of sputtered zirconium (Zr) atoms in inductively coupled argon discharge. A Zr + ion flux fraction to overall Zr species mainly was obtained by deposition measurements with the retarding bias method, and the fraction approximately reached ∼100%. The Zr + ion fraction was affected by the discharge pressure, and hardly dependent on the discharge power corresponding to an electron density. This result suggested that the Zr + ions were generated with ionization process other than electron impact such as Penning effect. There was an optimal pressure to produce the Zr + ions, and the Zr + ion density estimated from the deposition measurement was consistent with that obtained from a combination of Langmuir probe measurements and mass spectroscopic measurements.

Zirconium oxide films were prepared by plasma-based ion implantation and deposition (PBII&D), where a zirconium pulse arc discharge was generated in O2/Ar gas mixture. The plasma was maintained for approximately 3 ms, and the ion current at the substrate was detected in a time range from 1 to 10 ms after the arc initiation. At O2/Ar pressures of 2.6–3.0 Pa, a stoichiometric film was obtained, while at a pressure lower than 2.2 Pa, the film also contained ZrOx (x

This paper reports on plasma parameters and ion composition of droplet-free Zr ion source for plasma immersion ion implantation and deposition (PIII&D). Zirconium (Zr) ions were obtained by ionizing sputtered Zr atoms in inductively-coupled argon discharge. The characteristics of plasma density, plasma potential and electron temperature were typical ones of such a inductive discharge, and the plasma parameters were not significantly influenced by mixing the sputtered Zr atoms into the plasma. Actually, the main ionic component was still Ar+ ions, and the ion density ratio of [Zr+]/[Ar+] was as low as ∼8%. Increase in sputtering rate of the Zr source will be necessary to improve the ion density ratio.

Summary form only given. Plasma-based ion implantation and deposition (PBII&D) is promising to modify the surface of substrate with a three dimensional shape, because both a conformal ion implantation and film deposition can be carried out. In the present research, zirconium oxide films were prepared using an intermittent zirconium arc discharge with arc currents of 30 A and 60 A in a mixed gas of argon/oxygen or pure oxygen gas, where the gas flow rate was varied from 100 sccm to 600 sccm, corresponding to the gas pressure of 0.12 Pa to 1.9 Pa. The arc current lasts 2-10 ms at every shot of the arc generation. The repetition rate is 0.25 Hz. The target with a diameter of 60 mm is placed at 150 mm apart from the arc source and is immersed in the plasma. The target applied voltage was varied from 0 to -10 kV. The atomic components of prepared films were investigated under variations of applied voltage and arc current. Stoichiometric films were obtained at Ar/O/sub 2/ flow rates of 300-400 sccm and 600 sccm for arc currents of 30 and 60 A, respectively, i.e., a large flow rate is necessary with increasing the arc current. In zirconia film preparation by PBII&D, the target voltage was varied under the conditions of an Ar/O/sub 2/ flow rate of 400 sccm and an arc current of 60 A. The Stoichiometric conditions were obtained at target voltages lower than -1 kV, while no stoichiometric films were not obtained at applied voltages higher than -2 kV. In case of no stoichiometric films, metallic zirconium components strongly appear. Thus, it is found that there is an optimal Ar/O/sub 2/ gas flow rate for respective ion fluxes. The arc in pure oxygen gas circumstance was unstable, and therefore, is inadequate to the zirconia film preparation.