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We have constructed and tested a novel plastic-scintillator-based solid-state active proton target for use in nuclear spectroscopic studies with nuclear reactions induced by an ion beam in inverse kinematics. The active target system, named Stack Structure Solid organic Scintillator Active Target (S4AT), consists of five layers of plastic scintillators, each with a 1-mm thickness. To determine the reaction point in the thickness direction, we exploit the difference in the energy losses due to the beam particle and the charged reaction product(s) in the scintillator material. S4AT offers the prospect of a relatively thick target while maintaining a good energy resolution. By considering the relative energy loss between different layers, the energy loss due to unreacted beam particles can be eliminated. Such procedure, made possible by the multi-layer structure, is essential to eliminate the effect of unreacted accompanying beam particles, thus enabling its operation at a moderate beam intensity of up to a few Mcps. We evaluated the performance of S4AT by measuring the elastic proton-proton scattering using a 70-MeV proton beam at Cyclotron and Radioisotope Center (CYRIC), Tohoku University., Comment: 32 pages, 14 figures

We propose a novel lossless and lossy compression scheme for color filter array~(CFA) sampled images based on the wavelet transform of them. Our analysis suggests that the wavelet coefficients of HL and LH subbands are highly correlated. Hence, we decorrelate Mallat wavelet packet decomposition to further sparsify the coefficients. In addition, we develop a camera processing pipeline for compressing CFA sampled images aimed at maximizing the quality of the color images constructed from the compressed CFA sampled images. We validated our theoretical analysis and the performance of the proposed compression scheme using images of natural scenes captured in a raw format. The experimental results verify that our proposed method improves coding efficiency relative to the standard and the state-of-the-art compression schemes CFA sampled images.

Image defogging is a technique used extensively for enhancing visual quality of images in bad weather condition. Even though defogging algorithms have been well studied, defogging performance is degraded by demosaicking artifacts and sensor noise amplification in distant scenes. In order to improve visual quality of restored images, we propose a novel approach to perform defogging and demosaicking simultaneously. We conclude that better defogging performance with fewer artifacts can be achieved when a defogging algorithm is combined with a demosaicking algorithm simultaneously. We also demonstrate that the proposed joint algorithm has the benefit of suppressing noise amplification in distant scene. In addition, we validate our theoretical analysis and observations for both synthesized datasets with ground truth fog-free images and natural scene datasets captured in a raw format.

Three-dimensional anisotropy of the Lande g-factor and its electrical modulation are studied for single uncapped InAs self-assembled quantum dots (QDs). The g-factor is evaluated from measurement of inelastic cotunneling via Zeeman substates in the QD for various magnetic field directions. We find that the value and anisotropy of the g-factor depends on the type of orbital state which arises from the three-dimensional confinement anisotropy of the QD potential. Furthermore, the g-factor and its anisotropy are electrically tuned by a side-gate which modulates the confining potential., Comment: 5 pages, 5 figures

We report the transport measurements on the InAs self-assembled quantum dots (SAQDs) which have a unique structural zero-dimensionality, coupled to a superconducting quantum interference device (SQUID). Owing to the SQUID geometry, we directly observe a {\pi} phase shift in the current phase relation and the negative supercurrent indicating {\pi} junction behavior by not only tuning the energy level of SAQD by back-gate but also controlling the coupling between SAQD and electrodes by side-gate. Our results inspire new future quantum information devices which can link optical, spin, and superconducting state., Comment: 3 pages

We measure the non-dissipative supercurrent in a single InAs self-assembled quantum dot (QD) coupled to superconducting leads. The QD occupation is both tuned by a back-gate electrode and lateral side-gate. The geometry of the side-gate allows tuning of the QD-lead tunnel coupling in a region of constant electron number with appropriate orbital state. Using the side-gate effect we study the competition between Kondo correlations and superconducting pairing on the QD, observing a decrease in the supercurrent when the Kondo temperature is reduced below the superconducting energy gap in qualitative agreement with theoretical predictions.

We experimentally study the transport features of electrons in a spin-diode structure consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic (NM) and one ferromagnetic (FM) lead, in which the QD has an artificial atomic nature. A Coulomb stability diamond shows asymmetric features with respect to the polarity of the bias voltage. For the regime of two-electron tunneling, we find anomalous suppression of the current for both forward and reverse bias. We discuss possible mechanisms of the anomalous current suppression in terms of spin blockade via the QD/FM interface at the ground state of a two-electron QD., Comment: 5 pages, 4 figures + 2 appendix figures

We conducted local anodic oxidation (LAO) lithography in single-layer, bilayer, and multilayer graphene using tapping-mode atomic force microscope. The width of insulating oxidized area depends systematically on the number of graphene layers. An 800-nm-wide bar-shaped device fabricated in single-layer graphene exhibits the half-integer quantum Hall effect. We also fabricated a 55-nm-wide graphene nanoribbon (GNR). The conductance of the GNR at the charge neutrality point was suppressed at low temperature, which suggests the opening of an energy gap due to lateral confinement of charge carriers. These results show that LAO lithography is an effective technique for the fabrication of graphene nanodevices., Comment: 4 pages, 4 figures

We have fabricated single electron tunneling structures by forming nanogap metallic electrodes directly upon single self-assembled InAs quantum dots (QDs). The fabricated samples exhibited clear Coulomb blockade effects. Furthermore, a clear Kondo effect was observed when strong coupling between the electrodes and the QDs was realized using a large QD with a diameter of ~ 100 nm. From the temperature dependence of the linear conductance at the Kondo valley, the Kondo temperature TK was determined to be ~ 81 K. This is the highest TK ever reported for artificial quantum nanostructures., Comment: 3 pages, 3 figures

Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N = 3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B = 1.2 T. This means that, in the Kondo regime, an inverse effective magnetic field of B ~ 1.2 T can be applied to the QD in the parallel magnetic configuration of the ferromagnetic electrodes., Comment: 4 pages, 3 figures

We have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb staircases and Coulomb oscillations at 40 mK. Furthermore, clear suppression in conductance was observed for the source-drain voltage $|V_{\rm SD}| < 2\Delta/e$, where $\Delta$ is the SC energy gap of Al. The absence of Josephson current that flows through QDs is due to the strong Coulomb interaction and non-negligible thermal fluctuation in our measurement system.

We demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device. By using ferromagnetic Ni nano-gap electrodes, we observe the Coulomb blockade oscillations at a small bias voltage. In the vicinity of the Coulomb blockade peak, the TMR effect is significantly modulated and even its sign is switched by changing the gate voltage, where the sign of the TMR value changes at the resonant condition., Comment: 3 pages, 3 figures

We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage., Comment: 4 pages, 3 figures

We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down. In contrast, when the Zeeman splitting of the spin-resolved levels is enlarged with tilting magnetic field direction, the spin orientations of both the relevant edge channels are switched to spin-down, and the inter-edge-channel scattering is strongly promoted. The evident spin dependence of the adiabatic edge-channel transport is an individual feature in silicon-based two-dimensional electron systems, originating from a weak spin-orbit interaction., Comment: 5 pages, 5 figures, to appear in Phys. Rev. B (Rapid Communications)