1. High Speed Memory Operation in Channel-Last, Back-gated Ferroelectric Transistors
- Author
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Prashant Majhi, Le Van H, Tung I-Cheng, Brian S. Doyle, Yoo Hui Jae, Tobias L Brown-Heft, Yu-Jin Chen, Abhishek Sharma, Miriam Reshotko, Jack T. Kavalieros, and Matthew V. Metz
- Subjects
Materials science ,business.industry ,Transistor ,Process (computing) ,Hardware_PERFORMANCEANDRELIABILITY ,Ferroelectricity ,law.invention ,High speed memory ,Semiconductor ,Hardware_GENERAL ,law ,Gate oxide ,Logic gate ,Hardware_INTEGRATEDCIRCUITS ,Optoelectronics ,business ,Communication channel - Abstract
Scaled ferroelectric transistors (L g =76 nm) in a back- gated configuration are fabricated with a channel-last process flow. Using this approach, optimization of the ferroelectric gate oxide film can be decoupled from that of the semiconductor channel to reduce parasitic interfaces. As a result, ferroelectric transistors with 3σ memory window for fast programming time of 10 ns (including an instantaneous read-after-write) at 1.8 V and high endurance of 1012 cycles are demonstrated for the first time.
- Published
- 2020
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