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The effect of an initial saturation coverage of antimony on the growth of indium arsenide quantum dots on gallium arsenide, during metalorganic vapor-phase epitaxy, was studied. The results showed that antimony incorporates into the quantum dots, increasing their density and total volume, and causing them to be more densely clustered together.

A study is conducted to examine discharge phenomena of a nonthermal atmospheric pressure plasma jet source. The plasma parameters indicate that the APPJ shows promise of various materials applications as it can produce substantial amounts of reactive species and avoid thermal damages.

A new study investigates the surface roughness of gallium arsenide metalorganic vapor-phase epitaxy films using scanning tunneling microscopy.

Research was conducted to examine the effects of carbon tetrachloride concentration and temperature on the morphology of carbon-doped gallium arsenide films grown by metalorganic vapor-phase epitaxy (MOVPE). The GaAs films were characterized by means of scanning tunneling microscopy immediately following MOVPE. Results demonstrate an abrupt transition to etching with increasing carbon tetrachloride concentration which is manifested by the appearance of pits in the film surface.

The arsenic passivation of vicinal Ge substrates in the metalorganic vapor-phase epitaxy (MOVPE) is analyzed. Using scanning tunneling microscopy, x-ray photoelectron spectroscopy and low energy electron diffraction, the surface structures following subjection to tertiarybutylarsine and hydrogen are described. The results show that the distribution of dimer orientations and the step heights are a sensitive function of the MOVPe process states.

A low temperature, atmospheric pressure plasma that operates with radio frequency power at 13.56 MHz and produces 1.2 vol % oxygen atoms is reported. A model of the gas phase reactions is developed, which yields O atom and [O.sub.3] concentrations in agreement with experiment, and the fast etching rate is attributed to the high O atom flux generated by the plasma source.

Indium phosphide (001) surfaces are exposed to 0.61-mTorr trimethylantimony in a metalorganic vapor-phase eptiaxy reactor. The results show that a thin layer of InSb formed on the surface is approximately 6.8Angstrom thick.

The physics of helium and argon rf discharges are investigated in the pressure range from 50 to 760 Torr. The plasma source consists of metal electrodes that are perforated to allow the gas to flow through them.

Reports on the characterization of hydrogen adsorption rate on the c(4x4), (2x4), (2x6) and (4x2) reconstructions of gallium arsenide by internal-reflection infrared spectroscopy. Indication of the existence of surface atoms in a variety of chemical environments from the large number of peaks observed.

Three stable phases were observed in Gallium phosphide (001) surfaces prepared by metalorganic vapor-phase epitaxy. They were characterized in situ by low-energy electron diffraction, x-ray photoemission spectroscopy and reflectance difference spectroscopy.

The oxidation of anion- and cation-rich indium phosphide (001) is investigated by exposure to unexcited molecular oxygen. It is found that the oxidation rate strongly depends on the surface composition and proceeds by different mechanisms on the phosphorus-rich and indium rich reconstructions.

Discusses the generation of a phosphorous-rich structure on the indium phosphide surface during metalorganic vapor-phase epitaxy. Adsorption of phosphorous dimers, alkyl groups and hydrogen atoms onto a layer of P atoms; Production of c and p domains of the adsorbed dimers.