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137 results on '"Herth, Etienne"'

3. Chirped Bragg Gratings for On-Chip Pulse Compression in the Mid-Infrared Wavelength Range

Author

Bricout, Annabelle, Turpaud, Victor, Nguyen, Thi-Hao-Nhi, Dely, Hamza, Koompai, Natnicha, Calcaterra, Stefano, Frigerio, Jacopo, Edmond, Samson, Coudevylle, Jean-René, Herth, Etienne, Alonso-Ramos, Carlos, Vivien, Laurent, Isella, Giovanni, Marris-Morini, Delphine, Witzens, Jeremy, editor, Poon, Joyce, editor, Zimmermann, Lars, editor, and Freude, Wolfgang, editor

Published
2024
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5. Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region

Author

Elbaz, Anas, Arefin, Riazul, Sakat, Emilie, Wang, Binbin, Herth, Etienne, Patriarche, Gilles, Foti, Antonino, Ossikovski, Razvigor, Sauvage, Sebastien, Checoury, Xavier, Pantzas, Konstantinos, Sagnes, Isabelle, Chrétien, Jérémie, Casiez, Lara, Bertrand, Mathieu, Calvo, Vincent, Pauc, Nicolas, Chelnokov, Alexei, Boucaud, Philippe, Boeuf, Frederic, Reboud, Vincent, Hartmann, Jean-Michel, and Kurdi, Moustafa El

Subjects
Physics - Optics, Physics - Applied Physics
Abstract

GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources., Comment: 30 pages, 9 figures

Published
2020
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8. UV‑A Flexible LEDs Based on Core–Shell GaN/AlGaN Quantum Well Microwires.

Author

Amador-Mendez, Nuno, Kochetkov, Fedor M., Hernandez, Roberto, Neplokh, Vladimir, Grenier, Vincent, Finot, Sylvain, Valera, Lucie, Duraz, Jules, Fominykh, Nikita, Parshina, Elizaveta K., Deriabin, Konstantin V., Islamova, Regina M., Herth, Etienne, Bouchoule, Sophie, Julien, François, Abraham, Malini, Das, Subrata, Jacopin, Gwénolé, Krasnikov, Dmitry V., and Nasibulin, Albert

Published
2024
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11. GeSnOI mid-infrared laser technology

Author

Wang, Binbin, Sakat, Emilie, Herth, Etienne, Gromovyi, Maksym, Bjelajac, Andjelika, Chaste, Julien, Patriarche, Gilles, Boucaud, Philippe, Boeuf, Frédéric, Pauc, Nicolas, Calvo, Vincent, Chrétien, Jérémie, Frauenrath, Marvin, Chelnokov, Alexei, Reboud, Vincent, Hartmann, Jean-Michel, and El Kurdi, Moustafa

Published
2021
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12. Low power sessile droplet actuation via modulated surface acoustic waves

Author

Baudoin, Michael, Brunet, Philippe, Matar, Olivier Bou, and Herth, Etienne

Subjects
Physics - Fluid Dynamics
Abstract

Low power actuation of sessile droplets is of primary interest for portable or hybrid lab-on-a-chip and harmless manipulation of biofluids. In this paper, we show that the acoustic power required to move or deform droplets via surface acoustic waves can be substantially reduced through the forcing of the drops inertio-capillary modes of vibrations. Indeed, harmonic, superharmonic and subharmonic (parametric) excitation of these modes are observed when the high frequency acoustic signal (19.5 MHz) is modulated around Rayleigh-Lamb inertio-capillary frequencies. This resonant behavior results in larger oscillations and quicker motion of the drops than in the non-modulated case.

Published
2012
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16. Chitosan and sodium carboxymethylcellulose biocomplex interaction properties for biomedical and pharmaceutical applications.

Author

Chikhaoui, Eya, Cherif, Emna, and Herth, Etienne

Subjects
BIOPOLYMERS, CHITOSAN, CARBOXYMETHYLCELLULOSE, MOLECULAR volume, ELECTRIC conductivity, SODIUM, MOLE fraction
Abstract

The naturally occurring polymers chitosan (CH) and sodium carboxymethylcellulose (CMC) have attracted the interest of researchers in a variety of biomedical and pharmaceutical applications such as drug delivery, cosmetics, and tissue engineering. However, CMC and CH have certain limitations for use in controlled aqueous CMC/CH mixed solutions. In this study, aqueous solutions of CMC and CH with the same concentration of 0.5 g/l and pH 6 are mixed under atmospheric conditions. The effects of temperature and molar volume fraction X1 of CMC on the decreased electrical conductivity of CMC/CH mixed solutions were studied at different temperatures ranging from 15°C to 80°C. We highlighted that different regions can be distinguished in the aqueous CMC/CH complexes, depending on the composition and electrostatic interactions of the solutions, which are associated with significantly different phase behaviors. [ABSTRACT FROM AUTHOR]

Published
2024
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17. Exploring Interactions and Properties of the Sodium Carboxymethyl Cellulose–Chitosan Biopolymer Complex.

Author

Ardhaoui, Wiem, Cherif, Emna, and Herth, Etienne

Subjects
SODIUM carboxymethyl cellulose, GIBBS' free energy, BIOPOLYMERS, CHITOSAN, ELECTRIC conductivity, AQUEOUS solutions
Abstract

The complex of sodium carboxymethyl cellulose (CMC) and chitosan (CH) in aqueous solution can be used for biomedical applications and is very beneficial for tissue engineering, drug delivery, and disease treatment. This article presents elaboration and properties of the complex of two polysaccharides with opposite charges of CMC/CH in aqueous solutions. The electrical conductivity under the influence of increasing concentrations of the CMC/CH mixtures from (0.5 to 10) g l−1 and increasing temperatures from 288.15 to 318.15 K is investigated. The reduced conductivities, σred$\left(\sigma\right)_{\text{red}}$, energy of activation ΔEσ$\Delta E_{\sigma}$, the Gibbs free energy of conductivity ΔGσred$\Delta G_{\text{σred}}$, and the activations parameters of the enthalpy (ΔHred$\Delta H_{\text{red}}$) and entropy (ΔSred$\Delta S_{\text{red}}$) are estimated. [ABSTRACT FROM AUTHOR]

Published
2024
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19. Enhancing Mid-Infrared Supercontinuum Generation at Low Pump Power in SiGe Waveguides

Author

Turpaud, Victor, primary, Koompai, Natnicha, additional, Nhi Nguyen, Thi Hao, additional, Yang, Yijun, additional, Frigerio, Jacopo, additional, Coudevylle, Jean-René, additional, Bouville, David, additional, Alonso-Ramos, Carlos, additional, Herth, Etienne, additional, Vivien, Laurent, additional, Isella, Giovanni, additional, and Marris-Morini, Delphine, additional

Published
2023
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32. CMOS Compatible Al‐Doped ZnO Sol–Gel Thin‐Film Properties

Author

Moussa, Nizar Ben, primary, Lajnef, Mohamed, additional, Jebari, Nessrine, additional, Mahut, Frédéric, additional, Villebasse, Cédric, additional, Lafosse, Xavier, additional, David, Christophe, additional, Chaste, Julien, additional, Chtourou, Radhouane, additional, and Herth, Etienne, additional

Published
2022
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36. GeSnOI technology for enhanced Si-based laser designs and performances

Author

El Kurdi, Moustafa, primary, Elbaz, Anas, additional, von den Driesch, Nils, additional, Wang, Binbin, additional, Sakat, Emilie, additional, Herth, Etienne, additional, Patriarche, Gilles, additional, Pantzas, Konstantinos, additional, Sagnes, Isabelle, additional, Checoury, Xavier, additional, Chrétien, Jérémie, additional, Pauc, Nicolas, additional, Calvo, Vincent, additional, Boeuf, Frédéric, additional, Boucaud, Philippe, additional, Chelnokov, Alexei, additional, Reboud, Vincent, additional, Grützmacher, Detlev, additional, Buca, Dan, additional, and Hartmann, Jean-Michel, additional

Published
2021
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38. Synthesis of ZnO sol–gel thin-films CMOS-Compatible

Author

Ben Moussa, Nizar, primary, Lajnef, Mohamed, additional, Jebari, Nessrine, additional, Villebasse, Cedric, additional, Bayle, Fabien, additional, Chaste, Julien, additional, Madouri, Ali, additional, Chtourou, Radouane, additional, and Herth, Etienne, additional

Published
2021
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39. (Invited) Tensile Strain Engineering and Defects Management in GeSn Laser Cavities

Author

EL Kurdi, Moustafa, primary, Elbaz, Anas, additional, Wang, Binbin, additional, Sakat, Emilie, additional, Herth, Etienne, additional, Patriarche, Gilles, additional, Pantzas, Konstantinos, additional, Sagnes, Isabelle, additional, Sauvage, Sebastien, additional, Checoury, Xavier, additional, Chelnokov, Alexei, additional, Reboud, Vincent, additional, Chretien, Jeremie, additional, Pauc, Nicolas, additional, Calvo, Vincent, additional, Boeuf, Frédéric, additional, Boucaud, Philippe, additional, von den Driesch, Nils, additional, Grützmacher, Detlev, additional, Hartmann, Jean-Michel, additional, and Buca, Dan, additional

Published
2020
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40. Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region

Author

Elbaz, Anas, primary, Arefin, Riazul, additional, Sakat, Emilie, additional, Wang, Binbin, additional, Herth, Etienne, additional, Patriarche, Gilles, additional, Foti, Antonino, additional, Ossikovski, Razvigor, additional, Sauvage, Sebastien, additional, Checoury, Xavier, additional, Pantzas, Konstantinos, additional, Sagnes, Isabelle, additional, Chrétien, Jérémie, additional, Casiez, Lara, additional, Bertrand, Mathieu, additional, Calvo, Vincent, additional, Pauc, Nicolas, additional, Chelnokov, Alexei, additional, Boucaud, Philippe, additional, Boeuf, Frederic, additional, Reboud, Vincent, additional, Hartmann, Jean-Michel, additional, and El Kurdi, Moustafa, additional

Published
2020
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46. Dielectric characterization based on a printable resonant stub in air and a liquid environment

Author

Guerchouche, Kamel, Herth, Etienne, Calvet, Laurie E., Roland, Nathalie, LOYEZ, Christophe, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Circuits Systèmes Applications des Micro-ondes - IEMN (CSAM - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut TELECOM/TELECOM Lille1, Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), French RENATECH network, and Renatech Network

Subjects
[SPI]Engineering Sciences [physics], 3D EM simulation, flexible, microstrip resonator, dielectric characterization
Abstract

International audience; This paper develops a new approach for in situ characterization of specific dielectric-based products that are located in complex geometric containers. The method uses a resonant T-topology of microstrip lines realized on a flexible substrate. This narrowband interferometric technique consists of determining the dielectric properties via the resonance characteristics of a flexible band-stop filter. The system is designed for the application of RFID (Radio-Frequency IDentication) traceability. The proof of principle is validated experimentally and a complete comparison between an analytical approach and electromagnetic simulations are presented. The flexibility of the proposed solution allows the characterization of the liquid and container in the final form. This study highlights several measurement optimization strategies that can be combined when a material is loaded with a constituent containing alcohol concentrations ranging from 0 to 37%. The parameters extracted for the loss tangent and the relative permittivities demonstrate an accurate technique with a precision better than 5%.

Published
2017
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47. Modeling and characterization of piezoelectric beams based on an aluminum nitride thin-film layer

Author

Herth, Etienne, Algré, E., Rauch, Jean-Yves, Gerbedoen, Jean-Claude, Defrance, N., Delobelle, Patrick, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Franche-Comté (UFC)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Technologie de Belfort-Montbeliard (UTBM), Electronique, Systèmes de communication et Microsystèmes (ESYCOM), Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Université Paris-Est Marne-la-Vallée (UPEM)-ESIEE Paris, Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Université Polytechnique Hauts-de-France (UPHF)-Ecole Centrale de Lille-Université Polytechnique Hauts-de-France (UPHF)-Institut supérieur de l'électronique et du numérique (ISEN), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Conservatoire National des Arts et Métiers [CNAM] (CNAM), HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-Université Paris-Est Marne-la-Vallée (UPEM)-ESIEE Paris, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), and Université Paris-Est Marne-la-Vallée (UPEM)-ESIEE Paris-Conservatoire National des Arts et Métiers [CNAM] (CNAM)

Subjects
[SPI.MECA]Engineering Sciences [physics]/Mechanics [physics.med-ph], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; This paper presents a method to determine the mechanical properties of piezoelectric thin films. The vibrational behavior of microcantilevers and clamped–clamped beams actuated by aluminum nitride (AlN) piezoelectric films were analyzed in order to investigate the suitability of these devices as characterization tools. Different geometries of resonators composed of a free-standing structure made up of a TiPt/AlN/TiPt piezoelectric stack were tested. The out-of-plane motion of the resonators was assessed by laser Doppler vibrometry. An AlN Young’s modulus of about 200GPa was extracted from resonance-frequency measurements by means of Comsol software simulations that allow taking into account AlN underetching. This value of Young’s modulus was compared to the one measured by a nanoindentationtechnique. The quality of crystallinity was also assessed using X-ray diffraction (XRD) measurements. We then estimated the residual stress (about 200MPa) using an interferometry measurement.

Published
2016
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49. Multi-axis piezoresistive MEMS force sensor

Author

Billot, Margot, Herth, Etienne, Agnus, Joel, Piat, Emmanuel, Stempfle, Philippe, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], [INFO.INFO-DS]Computer Science [cs]/Data Structures and Algorithms [cs.DS], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI.AUTO]Engineering Sciences [physics]/Automatic
Abstract

International audience; This study presents a new multi-axis friction sensor. This chip is designed to measure normal forces up to 1 mN and friction forces up to 100 μN and will be used to study multi-asperity nanotribology. First prototypes have been manufactured on a p-type Silicon on Insulator wafer (SOI) and characterized.

Published
2015

50. Estimation of temperature dependence of C44 elastic constant in LiTaO3 single crystals

Author

Gonzalez, Minerva, Bartasyte, Ausrine, Dulmet, Bernard, Edouard Guichardaz, Blandine, Henrot, Fabien, Bassignot, Florent, Herth, Etienne, Margueron, Samuel, Ballandras, Sylvain, Kajiyama, C, Bleyl, Ingo, Brice, J, Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), Frec'n'sys SASU (Frec'n'sys SASU), Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)

Subjects
[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], [SPI.OTHER]Engineering Sciences [physics]/Other, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; In this work, electromechanical coupling factor, K2, and Temperature Coefficient of Frequency (TCF) of Bulk Acoustic Wave (BAW) resonators based on high aspect ratio ridge structures in 42°Y-X LiTaO3 (LT) and Z-cut LT single crystals with different Li stoichiometries were studied experimentally, analytically and by combined finite element / boundary element analysis. Initially, analytical analysis was carried out to determine the contribution of different elastic constants in thickness field excitation of shear modes in high aspect ratio ridge structures. The analysis shows shear modes that are dependent on C44 in ridge resonators based on 42°Y-X and Z-cut LT crystals. However, the measured frequency response of such structures exhibited many spurious resonances, making difficult the direct extraction of acoustical parameters. A fitting procedure that allows taking into account several resonances occurring simultaneously in a restricted frequency range was used. Higher K2 and more positive temperature dependence of frequency were determined for ridge structures in nearly stoichiometric crystals compared to those of equivalent structures in congruent ones.

Published
2015

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