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Organic semiconductors with distinct molecular properties and large carrier mobilities are constantly developed in attempt to produce highly-efficient electronic materials. Recently, designer molecules with unique structural modifications have been expressly developed to suppress molecular motions in the solid state that arise from low-energy phonon modes, which uniquely limit carrier mobilities through electron-phonon coupling. However, such low-frequency vibrational dynamics often involve complex molecular dynamics, making comprehension of the underlying electronic origins of electron-phonon coupling difficult. In this work, we first generate a mode-resolved picture of electron-phonon coupling in a series of materials that were specifically designed to suppress detrimental vibrational effects. From this foundation, we develop a method based on the crystalline orbital Hamiltonian population analyses to resolve the origins -- down to the single atomic-orbital scale -- of surprisingly large electron-phonon coupling constants of particular vibrations, explicitly detailing the manner in which the intermolecular wavefunction overlap is perturbed. Overall, this approach provides a comprehensive explanation into the unexpected effects of less-commonly studied molecular vibrations, revealing new aspects of molecular design that should be considered for creating improved organic semiconducting materials.

Hall effect measurements in doped polymer semiconductors are widely reported, but are difficult to interpret due to screening of Hall voltages by carriers undergoing incoherent transport. Here, we propose a refined analysis for such Hall measurements, based on measuring the Hall coefficient as a function of temperature, and modelling carriers as existing in a regime of variable "deflectability" (i.e. how strongly they "feel" the magnetic part of the Lorentz force). By linearly interpolating each carrier between the extremes of no deflection and full deflection, we demonstrate that it is possible to extract the (time-averaged) concentration of deflectable charge carriers, $\left$, the average, temperature-dependent mobility of those carriers, $\left(T)$, as well as the ratio of conductivity that comes from such deflectable transport, $d(T)$. Our method was enabled by the construction of an improved AC Hall measurement system, as well as an improved data extraction method. We measured Hall bar devices of ion-exchange doped films of PBTTT-C$_{14}$ from 10--300 K. Our analysis provides evidence for the proportion of conductivity arising from deflectable transport, $d(T)$, increasing with doping level, ranging between 15.4% and 16.4% at room temperature. When compared to total charge-carrier-density estimates from independent methods, the values of $\left$ extracted suggest that carriers spend $\sim$37% of their time of flight being deflectable in the most highly doped of the devices measured here. The extracted values of $d(T)$ being less than half this value thus suggest that the limiting factor for conductivity in such highly doped devices is carrier mobility, rather than concentration., Comment: Accepted for publication in APS Physical Review Materials

Charge modulation microscopy (CMM) is an electro-optical method that is capable of mapping the spatial distribution of induced charges in an organic field-effect transistor (OFET). Here, we report a new (and simple) implementation of CMM in transmission geometry with camera-based imaging. A significant improvement in data acquisition speed (by at least an order of magnitude) has been achieved while preserving the spatial and spectral resolution. To demonstrate the capability of the system, we measured the spatial distribution of the induced charges in an OFET with a polymer blend of indacenodithiophene-co-benzothiadiazole and poly-vinylcarbazole that shows micrometer-scale phase separation. We were able to resolve spatial variations in the accumulated charge density on a length scale of 500 nm. We demonstrated through a careful spectral analysis that the measured signal is a genuine charge accumulation signal that is not dominated by optical artifacts.

The way in which conjugated polymers pack in the solid state strongly affects the performance of polymer-based optoelectronic devices. However, even for the most crystalline conjugated polymers the precise packing of chains within the unit cell is not well established. Here we show that by performing resonant X-ray diffraction experiments at the sulfur K-edge we are able to resolve the tilting of the planar backbones of crystalline poly(3-hexylthiophene) (P3HT) within the unit cell. This approach exploits the anisotropic nature of the X-ray optical properties of conjugated polymers, enabling us to discern between different proposed crystal structures. By comparing our data with simulations based on different orientations, a tilting of the planar conjugated backbone with respect to the side chain stacking direction of 30 ± 5° is determined.

Investigation of the inherent field-driven charge transport behaviour of three-dimensional lead halide perovskites has largely remained challenging, owing to undesirable ionic migration effects near room temperature and dipolar disorder instabilities prevalent specifically in methylammonium-and-lead-based high-performing three-dimensional perovskite compositions. Here, we address both these challenges and demonstrate that field-effect transistors based on methylammonium-free, mixed metal (Pb/Sn) perovskite compositions do not suffer from ion migration effects as notably as their pure-Pb counterparts and reliably exhibit hysteresis-free p-type transport with a mobility reaching 5.4 cm2 V-1 s-1. The reduced ion migration is visualized through photoluminescence microscopy under bias and is manifested as an activated temperature dependence of the field-effect mobility with a low activation energy (~48 meV) consistent with the presence of the shallow defects present in these materials. An understanding of the long-range electronic charge transport in these inherently doped mixed metal halide perovskites will contribute immensely towards high-performance optoelectronic devices.

Conjugated polymer field-effect transistors are emerging as an enabling technology for flexible electronics due to their excellent mechanical properties combined with sufficiently high charge carrier mobilities and compatibility with large-area, low-temperature processing. However, their electrical stability remains a concern. ON-state (accumulation mode) bias-stress instabilities in organic semiconductors have been widely studied, and multiple mitigation strategies have been suggested. In contrast, OFF-state (depletion mode) bias-stress instabilities remain poorly understood despite being crucial for many applications in which the transistors are held in their OFF-state for most of the time. Here, we present a simple method of using an anti-solvent treatment to achieve significant improvements in OFF-state bias-stress and environmental stability as well as general device performance for one of the best performing polymers, solution-processable indacenodithiophene-co-benzothiadiazole (IDT-BT). IDT-BT is weakly crystalline, and we attribute the notable improvements to an anti-solvent-induced, increased degree of crystallinity, resulting in a lower probability of electron trapping and the removal of charge traps. Our work highlights the importance of the microstructure in weakly crystalline polymer films and offers a simple processing strategy for achieving the reliability required for applications in flexible electronics. Validerad;2023;Nivå 2;2023-07-05 (hanlid);Funder: Engineering and Physical Sciences Research Council (EP/R031894/1); EPSRC Centre for Doctoral Training (EP/L015889/1); EPSRC (EP/S030662/1)

Funder: Ministry of Science and Technology of the People’s Republic of China (Chinese Ministry of Science and Technology), The cornerstones of emerging high-performance organic photovoltaic devices are bulk heterojunctions, which usually contain both structure disorders and bicontinuous interpenetrating grain boundaries with interfacial defects. This feature complicates fundamental understanding of their working mechanism. Highly-ordered crystalline organic p–n heterojunctions with well-defined interface and tailored layer thickness, are highly desirable to understand the nature of organic heterojunctions. However, direct growth of such a crystalline organic p–n heterojunction remains a huge challenge. In this work, we report a design rationale to fabricate monolayer molecular crystals based p–n heterojunctions. In an organic field-effect transistor configuration, we achieved a well-balanced ambipolar charge transport, comparable to single component monolayer molecular crystals devices, demonstrating the high-quality interface in the heterojunctions. In an organic solar cell device based on the p–n junction, we show the device exhibits gate-tunable open-circuit voltage up to 1.04 V, a record-high value in organic single crystalline photovoltaics.

Funder: China Scholarship Council; Id: http://dx.doi.org/10.13039/501100004543, Funder: Royal Society Newton International Fellowship, Heavy heteroatom substitution of the backbone is an effective strategy to improve molecular packing and charge delocalization in polymer semiconductors. Such a backbone modification also facilitates oxidative doping as a result of reduced ionization potential (IP). Here, the effect of single‐atom selenium substitution on doping and charge transport properties of a class of polythiophene copolymers is explored. The room temperature (RT) conductivities of the doped polymers are significantly enhanced by the selenium substitution for both molecular doping and ion exchange doping. The enhanced conduction is rationalized by the better crystallinity of the selenium‐containing system, which can be reinforced by a chain‐extended ribbon‐phase morphology induced by thermal annealing, which is robust toward doping. The resulting increase in the charge delocalization of the doped selenium‐containing system is evidenced by temperature‐dependent conductivities. In ion exchange doped films the maximum conductivity of ≈700 S cm−1 and a high thermoelectric (TE) power factor (PF) of 46.5 μW m−1 K−2 is achieved for the doped selenophene polymer and signatures of a metal‐insulator (M–I) transition are observed that are characteristics for heterogeneous conduction systems. The results show that single‐atom selenium substitution is an effective molecular design approach for improving the charge transport and TE properties of conjugated polymers.

Three n-type fused lactam semiconducting polymers were synthesized for thermoelectric and transistor applications via a cheap, highly atom-efficient, and nontoxic transition-metal free aldol polycondensation. Energy level analysis of the three polymers demonstrated that reducing the central acene core size from two anthracenes (A-A), to mixed naphthalene-anthracene (A-N), and two naphthalene cores (N-N) resulted in progressively larger electron affinities, thereby suggesting an increasingly more favorable and efficient solution doping process when employing 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI) as the dopant. Meanwhile, organic field effect transistor (OFET) mobility data showed the N-N and A-N polymers to feature the highest charge carrier mobilities, further highlighting the benefits of aryl core contraction to the electronic performance of the materials. Ultimately, the combination of these two factors resulted in N-N, A-N, and A-A to display power factors (PFs) of 3.2 μW m-1 K-2, 1.6 μW m-1 K-2, and 0.3 μW m-1 K-2, respectively, when doped with N-DMBI, whereby the PFs recorded for N-N and A-N are among the highest reported in the literature for n-type polymers. Importantly, the results reported in this study highlight that modulating the size of the central acene ring is a highly effective molecular design strategy to optimize the thermoelectric performance of conjugated polymers, thus also providing new insights into the molecular design guidelines for the next generation of high-performance n-type materials for thermoelectric applications.

The crystallization and aggregation behaviors of semiconducting polymers play a critical role in determining the ultimate performance of optoelectronic devices based on these materials. Due to the soft nature of polymers, crystallite imperfection exists ubiquitously. To this aspect, crystallinity is often used to represent the degree of crystallite imperfection in a reciprocal relation. Despite of the importance, the discussion on crystallinity is still on the phenomenological level and ambiguous in many cases. As two major contributors to crystallite imperfection, crystallite size and paracrystallinity are highly intertwined and hardly separated, hindering more accurate and trustworthy structural analysis. Herein, with the aid of synchrotron-based X-ray diffraction, combined with environmentally controlled heating capability, the evolution of crystallite size and paracrystallinity of two prototypical polythiophene-based thin films have been successfully measured. Strikingly, the paracrystallinity of poly(3-hexylthiophene-2,5-diyl) (P3HT) crystallites remains unchanged with annealing, while the paracrystallinity of poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT) becomes diminished with crystallite growth. This work delivers a promising gesture to semiconducting polymers community, confirming that it is possible to experimentally separate crystallite size and paracrystallinity, both of which are highly intertwined. With this progress, investigation on the correlation between further detailed microstructural parameters and device performance can be achieved.

Organometal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. However, the performance of these transistors is currently limited by the migration of ionic surface defects. Here, we show that a surface cleaning and passivation technique, which is based on a sequence of three solution-based steps, can reduce the concentration of ionic surface defects in halide-based perovskites without perturbing the crystal lattice. The approach consists of an initial cleaning step using a polar/nonpolar solvent, a healing step to remove surface organic halide vacancies and a second cleaning step. The surface treatment is shown to restore clean, near hysteresis-free transistor operation, even if the perovskite films are formed under non-optimized conditions, and can improve room-temperature FET mobility by two to three orders of magnitude compared to untreated films. Our methylammonium lead iodide (MAPbI3) FETs exhibit high n- and p-type mobilities of 3.0 cm2 V−1 s−1 and 1.8 cm2 V−1 s−1, respectively, at 300 K, and higher values (9.2 cm2 V−1 s−1; n-type) at 80 K. We also show that the approach can be used to transform PbI2 single crystals into high-quality, two-dimensional perovskite single crystals. A three-stage solution-based cleaning technique can increase the room-temperature mobility and reduce the hysteresis of organometal halide perovskite transistors by decreasing the surface defects in the perovskite films.

The determination of intrinsic chain stiffness of conjugated polymers is challenging, in particular, for scattering techniques because of their strong light absorption and structural instability du...

Over the last two decades organic spintronics has developed into a striving field with exciting reports of long spin diffusion lengths and spin relaxation times in organic semiconductors (OSCs). Easily processed and inexpensive, OSCs are considered a potential alternative to inorganic materials for use in spintronic applications. Spin currents have been detected in a wide range of materials, however, there is still uncertainty over the origin of the signals. Recently, we explored spin transport through an organic semiconductor with lateral spin injection and detection architectures, where the injected spin current is detected non-locally via spin-to-charge conversion in an inorganic detector. In this work we show that the widely-used control experiments like linear power dependence and inversion of the signal with the magnetic field are not sufficient evidence of spin transport and can lead to an incorrect interpretation of the signal. Here, we use in-plane angular dependent measurements to separate pure spin signal from parasitic effects arising from spin rectification (SREs). Apart from well established anisotropic magnetoresistance (AMR) and anomalous Hall effect (AHE), we observed a novel effect which we call spurious inverse spin Hall effect (ISHE). It strongly resembles ISHE behaviour, but arises in the ferromagnet rather than the detector meaning this additional effect has to be considered in future work.

Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trapping by the Coulomb potentials of the dopant counterions. Here, we present a combined experimental and theoretical study rebutting this belief. Using a newly developed doping technique based on ion exchange, we prepare highly doped films with several counterions of varying size and shape and characterize their carrier density, electrical conductivity, and paracrystalline disorder. In this uniquely large data set composed of several classes of high-mobility conjugated polymers, each doped with at least five different ions, we find electrical conductivity to be strongly correlated with paracrystalline disorder but poorly correlated with ionic size, suggesting that Coulomb traps do not limit transport. A general model for interacting electrons in highly doped polymers is proposed and carefully parametrized against atomistic calculations, enabling the calculation of electrical conductivity within the framework of transient localization theory. Theoretical calculations are in excellent agreement with experimental data, providing insights into the disorder-limited nature of charge transport and suggesting new strategies to further improve conductivities.

The development of systems capable of responding to environmental changes, such as humidity, requires the design and assembly of highly sensitive and efficiently transducing elements. Such a challenge can be mastered only by disentangling the role played by each component of the responsive system, thus ultimately achieving high performance by optimizing the synergistic contribution of all functional elements. Here, we designed and synthesized a novel [1]benzothieno[3,2

Incorporation of polar side chains on organic semiconducting materials have been used recently in thermoelectric materials to increase dopant:semiconductor miscibility and stability to further increase the performance and durability of devices. However, investigations into how polar side chains can affect the structure and energetics of polythiophenes compared to non-polar alkyl side chains are usually carried out using materials with no common morphological structure. Within this work we systematically investigate the increase in polar side chain content on poly(3-hexylthiophene) (P3HT) and how the optical, electrochemical, and structural properties are affected. We find a decreasing degree of aggregation with increasing polar side chain content leading to lower charge carrier mobilities. Upon doping with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), we find that the electrical conductivity is reduced when incorporating the polar side chain and no stabilising effect is demonstrated when annealing the doped thin films at raised temperatures. This study emphasises that polar functionalities do not always increase dopant:semiconductor interactions and can harm desirable structural and electrical characteristics, and therefore should be incorporated into organic semiconductors with caution.

Polymetallaynes are a special class of Wolf type-III polymers with high potential in organic electronics, especially in applications such as OFET, OLED and OPV. However, almost all reported polymetallaynes contain group 10 metals, while functional polymetallaynes with earlier transition metals have rarely been reported. Here, different synthetic routes to a group 8 polymetallayne P[Ru(dppe)2-DDBT], containing Ru(II) centers bridged in the trans-position by the organic linker 3,3′-didodecyl-5,5′-diethynyl-2,2′-bithiophene (DDBT), are explored. The polymer is obtained by copper-free dehydrohalogenation, characterized using NMR, IR and UV-vis spectroscopy, MALDI-TOF-MS, GPC and CV. In solution, CV studies show two separated metal-centered redox processes, indicating that the charge between metal centers is delocalized via the bridging ligand and a mixed-valence species exists (Kc = 102). In thin-films, P[Ru(dppe)2-DDBT] exhibits a single oxidation wave with a higher peak current intensity, consistent with a two-electron process and localized charge. Despite a degree of polymerization ∼32 based on NMR and GPC studies, P[Ru(dppe)2-DDBT] is fully solution processable, and thin-films were obtained via spin-coating using different solvents. AFM investigations of the films showed very low surface roughness, and first OFET devices with a top-gate bottom-contact (TGBC) architecture were fabricated to characterize the electronic properties, confirming the semiconducting behaviour of the polymetallayne.

Optoelectronic devices based on conjugated polymers often rely on multilayer device architectures, as it is difficult to design all the different functional requirements, in particular the need for efficient luminescence and fast carrier transport, into a single polymer. Here we study the photophysics of a recently discovered class of conjugated polymers with high charge carrier mobility and low degree of energetic disorder and investigate whether it is possible in this system to achieve by molecular design a high photoluminescence quantum yield without sacrificing carrier mobility. Tracing exciton dynamics over femtosecond to microsecond time scales, we show that nearly all nonradiative exciton recombination arises from interactions between chromophores on different chains. We evaluate the temperature dependence and role of electron-phonon coupling leading to fast internal conversion in systems with strong interchain coupling and the extent to which this can be turned off by varying side chain substitution. By sterically decreasing interchain interaction, we present an effective approach to increase the fluorescence quantum yield of low-energy gap polymers. We present a red-NIR-emitting amorphous polymer with the highest reported film luminescence quantum efficiency of 18% whose mobility concurrently exceeds that of amorphous-Si. This is a key result toward the development of single-layer optoelectronic devices that require both properties.

Funder: White Rock Foundation, Funder: Jardine Foundation, Funder: Cambridge Commonwealth European and International Trust, Coordination nanosheets are an emerging class of 2D, bottom-up materials having fully π-conjugated, planar, graphite-like structures with high electrical conductivities. Since their discovery, great effort has been devoted to expand the variety of coordination nanosheets; however, in most cases, their low crystallinity in thick films hampers practical device applications. In this study, mixtures of nickel and copper ions are employed to fabricate benzenehexathiolato (BHT)-based coordination nanosheet films, and serendipitously, it is found that this heterometallicity preferentially forms a structural phase with improved film crystallinity. Spectroscopic and scattering measurements provide evidence for a bilayer structure with in-plane periodic arrangement of copper and nickel ions with the NiCu2 BHT formula. Compared with homometallic films, heterometallic films exhibit more crystalline microstructures with larger and more oriented grains, achieving higher electrical conductivities reaching metallic behaviors. Low dependency of Seebeck coefficient on the mixing ratio of nickel and copper ions supports that the large variation in the conductivity data is not caused by change in the intrinsic properties of the films. The findings open new pathways to improve crystallinity and to tune functional properties of 2D coordination nanosheets.

Funder: Engineering and Physical Sciences Research Council; Id: http://dx.doi.org/10.13039/501100000266, Funder: (EPSRC), Hybrid integration of n‐type oxide with p‐type polymer transistors is an attractive approach for realizing high performance complementary circuits on flexible substrates. However, the stability of solution‐processed oxide transistors is limiting the lifetime and reliability of such circuits. Oxygen vacancies are the main defect degrading metal oxide transistor performance when ambient oxygen adsorbs onto metal oxide films. Here, an effective surface passivation treatment based on negative oxygen ion exposure combined with UV light is demonstrated, that is able to significantly reduce surface oxygen vacancy concentration and improve the field effect mobility to values up to 41 cm2 V−1 s−1 with high on–off current ratio of 108. The treatment also reduces the threshold voltage shift after 2 days in air from 5 to 0.07 V. The improved stability of the oxide transistors also improves the lifetime of hybrid complementary circuits and stable operation of complementary, analog amplifiers is confirmed for 60 days in air. The suggested approach is facile and can be widely applicable for flexible electronics using low‐temperature solution‐processed metal oxide semiconductors.

Funder: Consortium des Équipements de Calcul Intensif, Funder: The Leverhulme Trust, While the charge transport properties of organic semiconductors have been extensively studied over the recent years, the field of organics‐based thermoelectrics is still limited by a lack of experimental data on thermal transport and of understanding of the associated structure–property relationships. To fill this gap, a comprehensive experimental and theoretical investigation of the lattice thermal conductivity in polycrystalline thin films of dinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene (Cn‐DNTT‐Cn with n = 0, 8) semiconductors is reported. Strikingly, thermal conductivity appears to be much more isotropic than charge transport, which is confined to the 2D molecular layers. A direct comparison between experimental measurements (3ω–Völklein method) and theoretical estimations (approach‐to‐equilibrium molecular dynamics (AEMD) method) indicates that the in‐plane thermal conductivity is strongly reduced in the presence of the long terminal alkyl chains. This evolution can be rationalized by the strong localization of the intermolecular vibrational modes in C8‐DNTT‐C8 in comparison to unsubstituted DNTT cores, as evidenced by a vibrational mode analysis. Combined with the enhanced charge transport properties of alkylated DNTT systems, this opens the possibility to decouple electron and phonon transport in these materials, which provides great potential for enhancing the thermoelectric figure of merit ZT.

The formidable rise of lead‐halide perovskite photovoltaics has energized the search for lead‐free perovskite‐inspired materials (PIMs) with related optoelectronic properties but free from toxicity limitations. The photovoltaic performance of PIMs closely depends on their defect tolerance. However, a comprehensive experimental characterization of their defect‐level parameters—concentration, energy depth, and capture cross‐section—has not been pursued to date, hindering the rational development of defect‐tolerant PIMs. While mainstream, capacitance‐based techniques for defect‐level characterization have sparked controversy in lead‐halide perovskite research, their use on PIMs is also problematic due to their typical near‐intrinsic character. This study demonstrates on four representative PIMs (Cs3Sb2I9, Rb3Sb2I9, BiOI, and AgBiI4) for which Photoinduced Current Transient Spectroscopy (PICTS) offers a facile, widely applicable route to the defect‐level characterization of PIMs embedded within solar cells. Going beyond the ambiguities of the current discussion of defect tolerance, a methodology is also presented to quantitatively assess the defect tolerance of PIMs in photovoltaics based on their experimental defect‐level parameters. Finally, PICTS applied to PIM photovoltaics is revealed to be ultimately sensitive to defect‐level concentrations