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5. Top-Illuminated Annular Ge-on-Si APD in 45-nm Lateral SOI Process With High Gain–Bandwidth Product at 4 V Reverse Bias

Author

Dhrubo, Md Nabil Shehtab, Rollinson, John W., Karlicek, Robert F., and Hella, Mona M.

Abstract

A top-illuminated Ge-on-Si avalanche photodiode is designed and fabricated in GlobalFoundries’ 45-nm SOI platform (Si Photonic). The device utilizes an annular-shaped germanium layer as the absorption region, enclosed by cathode contacts to ensure avalanche multiplication of photocarriers and flow of photocurrent from all directions to the central anode. The proposed device structure modification results in an increased gain within a small silicon area. The device utilizes a germanium width of $0.8~\mu $ m to reduce the carrier transit time and achieve high optoelectronic bandwidth. Testing is performed using 940- and 1550-nm wavelength continuous wave lasers. At a reverse bias of 4 V, the device shows a peak gain of 3.5 and 8.6 at 940- and 1550-nm wavelength, respectively. At the same bias, a -3-dB optoelectronic bandwidth of around 13.4 GHz is observed for 1550-nm wavelength. This results in a gain-bandwidth product (GBP) of ~115 GHz at 1550-nm wavelength for a low reverse bias of 4 V.

Published
2024
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10. Broadband Vibration-Based Energy Harvesting for Wireless Sensor Applications Using Frequency Upconversion

Author

Li, Jinglun, primary, Ouro-Koura, Habilou, additional, Arnow, Hannah, additional, Nowbahari, Arian, additional, Galarza, Matthew, additional, Obispo, Meg, additional, Tong, Xing, additional, Azadmehr, Mehdi, additional, Halvorsen, Einar, additional, Hella, Mona M., additional, Tichy, John A., additional, and Borca-Tasciuc, Diana-Andra, additional

Published
2023
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14. Broadband Vibration-Based Energy Harvesting for Wireless Sensor Applications Using Frequency Upconversion

Author

Li, Jinglun, Ouro-Koura, Habilou, Arnow, Hannah, Nowbahari, Arian, Galarza, Matthew, Obispo, Meg, Tong, Xing, Azadmehr, Mehdi, Halvorsen, Einar, Hella, Mona M., Tichy, John A., and Borca-Tasciuc, Diana-Andra

Abstract

Silicon-based kinetic energy converters employing variable capacitors, also known as electrostatic vibration energy harvesters, hold promise as power sources for Internet of Things devices. However, for most wireless applications, such as wearable technology or environmental and structural monitoring, the ambient vibration is often at relatively low frequencies (1–100 Hz). Since the power output of electrostatic harvesters is positively correlated to the frequency of capacitance oscillation, typical electrostatic energy harvesters, designed to match the natural frequency of ambient vibrations, do not produce sufficient power output. Moreover, energy conversion is limited to a narrow range of input frequencies. To address these shortcomings, an impacted-based electrostatic energy harvester is explored experimentally. The impact refers to electrode collision and it triggers frequency upconversion, namely a secondary high-frequency free oscillation of the electrodes overlapping with primary device oscillation tuned to input vibration frequency. The main purpose of high-frequency oscillation is to enable additional energy conversion cycles since this will increase the energy output. The devices investigated were fabricated using a commercial microfabrication foundry process and were experimentally studied. These devices exhibit non-uniform cross-section electrodes and a springless mass. The non-uniform width electrodes were used to prevent pull-in following electrode collision. Springless masses from different materials and sizes, such as 0.5 mm diameter Tungsten carbide, 0.8 mm diameter Tungsten carbide, zirconium dioxide, and silicon nitride, were added in an attempt to force collisions over a range of applied frequencies that would not otherwise result in collisions. The results show that the system operates over a relatively wide frequency range (up to 700 Hz frequency range), with the lower limit far below the natural frequency of the device. The addition of the springless mass successfully increased the device bandwidth. For example, at a low peak-to-peak vibration acceleration of 0.5 g (peak-to-peak), the addition of a zirconium dioxide ball doubled the device’s bandwidth. Testing with different balls indicates that the different sizes and material properties have different effects on the device’s performance, altering its mechanical and electrical damping.

Published
2023

26. 2021 Microwave Week Workshops

Author

Sengupta, Kaushik, primary, Hopkins, Glenn D., additional, Manstretta, Danilo, additional, Hella, Mona Mostafa, additional, and Roblin, Patrick, additional

Published
2021
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39. IMS2020 Microwave Week Workshops

Author

Wang, Ethan, primary, Heydari, Payam, additional, Dunworth, Jeremy, additional, Manstretta, Danilo, additional, Hella, Mona, additional, and Roblin, Patrick, additional

Published
2020
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