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The electric-power dissipation of the anomalous-Hall current injected into a lateral load circuit is studied. The anomalous-Hall current is generated by a $\mathrm{Co_{75}Gd_{25}}$ ferrimagnetic Hall bar and injected into lateral contacts lithographied at the two edges. The current, the voltage and the power injected in the lateral circuit are studied as a function of the magnetization state, the load resistance $R_l$, and the temperature. The power efficiency shows a sharp maximum as a function $R_l$, which corresponds to the condition of the resistance matching of the two sub-circuits. The maximum power efficiency is of the order of the square of anomalous-Hall angle. The observations are in agreement with recent predictions based on a non-equilibrium variational approach., Comment: 12 pages, 4 Figures

Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer or spin orbit torque. In this work we demonstrate successful field-free 50fs single laser pulse driven magnetization reversal of [Tb/Co] based storage layer in a perpendicular magnetic tunnel junction. The nanofabricated magnetic tunnel junction devices have an optimized bottom reference electrode and show Tunnel Magnetoresistance Ratio values (TMR) up to 74\% after patterning down to sub-100nm lateral dimensions. Experiments on continuous films reveal peculiar reversal patterns of concentric rings with opposite magnetic directions, above certain threshold fluence. These rings have been correlated to patterned device switching probability as a function of the applied laser fluence. Moreover, the magnetization reversal is independent on the duration of the laser pulse. According to our macrospin model, the underlying magnetization reversal mechanism can be attributed to an in-plane reorientation of the magnetization due to a fast reduction of the out-of-plane uniaxial anisotropy. These aspects are of great interest both for the physical understanding of the switching phenomenon and their consequences for all-optical-switching memory devices, since they allow for a large fluence operation window with high resilience to pulse length variability.

Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents the ability to reverse the magnetic moment of a nanostructure using a femtosecond single laser pulse. It is an ultrafast method to manipulate magnetization without the use of any applied field. Since the first switching experiments carried on GdFeCo ferrimagnetic systems, single pulse AO-HIS has been restricted for a while to Gd-based alloys or Gd/FM bilayers where FM is a ferromagnetic layer. Only recently has AO-HIS been extended to a few other materials: MnRuGa ferrimagnetic Heusler alloys and Tb/Co multilayers with a very specific range of thickness and composition. Here, we demonstrate that single pulse AO-HIS observed in Tb/Co results from a different mechanism than the one for Gd based samples and that it can be obtained for a large range of rare earth-transition metal (RE-TM) multilayers, making this phenomenon much more general. Surprisingly, in this large family of (RE-TM) multilayer systems, the threshold fluence for switching is observed to be independent of the pulse duration, up to at least 12 ps. Moreover, at high laser intensities, concentric ring domain structures are induced, unveiling multiple fluence thresholds. These striking switching features, which are in contrast to those of AO-HIS in GdFeCo alloys, concomitant with the demonstration of an in-plane reorientation of the magnetization, point towards an intrinsic precessional reversal mechanism. Our results allow expanding the variety of materials with tunable magnetic properties that can be integrated in complex heterostructures and provide a pathway to engineer materials for future applications based on all-optical control of magnetic order.

We have studied the laser induced ultrafast quenching of Gd 4f magnetic order in ferrimagnetic Co100-xGdx alloys to highlight the role of the inter-atomic exchange coupling. We have taken advantage of the ultrashort soft X-ray pulses deliver by the femtoslicing beamline at the BESSY II synchrotron radiation source at the Helmholtz-Zentrum Berlin to perform element- and time-resolved X-ray Magnetic Circular Dichroism spectroscopy.Our results show that the laser induced quenching of Gd 4f magnetic order occurs on very different time-scales for the Co72Gd28, the Co77Gd23 and the Co79Gd21 alloys. Most of the magnetic moment losses occur within the first picosecond (ps) while the electron distribution is strongly out of equilibrium. After the equilibration of the electrons and lattice temperatures (t > 1 ps), the magnetic losses occur on slower rates that depend on the alloy composition: increasing the Co composition speeds up the demagnetization of Gd 4f sublattice. The strength of the inter-atomic exchange coupling which depends on composition, determines the efficiency of the angular momentum flow from the Gd 4f spin towards the lattice. Our results are in qualitative agreements with the predictions of the microscopic three temperatures model for ferrimagnetic alloys., Comment: 8 pages, 6 figures

We use time-resolved x-ray resonant magnetic scattering (tr-XRMS) at the Co M$_{2,3}$- and Tb O$_1$-edges to study ultrafast demagnetization in an amorphous Co$_{88}$Tb$_{12}$ alloy with stripe domains. Combining the femtosecond temporal with nanometer spatial resolution of our experiment, we demonstrate that the equilibrium spin texture of the thin film remains unaltered by the optical pump-pulse on ultrashort timescales ($<$1 ps). However, after $\simeq$ 4 ps, we observe the onset of a significant domain wall broadening, which we attribute to a reduction of the uniaxial magnetic anisotropy of the system, due to energy transfer to the lattice. Static temperature dependent magnetometry measurements combined with analytical modeling of the magnetic structure of the thin film corroborate this interpretation.

An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam epitaxy (MBE). The maximal spin injection efficiency is comparable for both methods. Additionally, the effect of annealing is also investigated for the two types of samples. Both samples show the same trend: an increase of the electroluminescence circular polarization (Pc) with the increase of annealing temperature, followed by a saturation of Pc beyond 350{\deg}C annealing. Since the increase of Pc starts well below the crystallization temperature of the full CoFeB bulk layer, this trend could be mainly due to an improvement of chemical structure at the top CoFeB/MgO interface. This study reveals that the control of CoFeB/MgO interface is essential important for an optimal spin injection into semiconductor.

We study the potential of all-electrical inductive techniques for the spectroscopy of propagating forward volume spin waves. We develop a one-dimensional model to account for the electrical signature of spin-wave reflection and transmission between inductive antennas and validate it with experiments on a perpendicularly magnetized Co/Ni multilayer. We describe the influence of the antenna geometry and antenna-to-antenna separation, as well as that of the material parameters on the lineshape of the inductive signals. For a finite damping, the broadband character of the antenna emission in the wave vector space imposes to take into account the growing decoherence of the magnetization waves upon their spatial propagation. The transmission signal can be viewed as resulting from two contributions: a first one from propagating spin-waves leading to an oscillatory phase of the broadband transmission coefficient, and another one originating from the distant induction of ferromagnetic resonance because of the long-range stray fields of realistic antennas. Depending on the relative importance of these two contributions, the decay of the transmitted signal with the propagation distance may not be exponential and the oscillatory character of the spin-wave phase upon propagation may be hidden. Our model and its experimental validation allow to define geometrical and material specifications to be met to enable the use of forward volume spin waves as efficient information carriers.

We demonstrate the first time-resolved X-ray resonant magnetic scattering (tr-XRMS) experiment at the N edge of Tb at 155 eV performed using a tabletop high-brightness high-harmonic generation (HHG) source. In contrast to static X-ray imaging applications, such optical-pump X-ray-probe studies pose a different set of challenges for the ultrafast driver laser because a high photon flux of X-rays resonant with the N edge must be attained at a low repetition rate to avoid thermal damage of the sample. This laboratory-scale X-ray magnetic diffractometer is enabled by directly driving HHG in helium with terawatt-level 1 um laser fields, which are obtained through pulse compression after a high-energy kHz-repetition-rate Yb:CaF2 amplifier. The high peak power of the driving fields allows us to reach the fully phase-matching conditions in helium, which yields the highest photon flux (>2x10^9 photons/s/1% bandwidth) in the 100-220 eV spectral range, to the best of our knowledge. Our proof-of-concept tr-XRMS measurements clearly resolve the spatio-temporal evolution of magnetic domains in Co/Tb ferrimagnetic alloys with femtosecond and nanometer resolution. In addition to the ultrafast demagnetization, we observe magnetic domain expansion with a domain wall velocity similar to that induced by spin transfer torque. The demonstrated method opens up new opportunities for time-space-resolved magnetic scattering with elemental specificity on various magnetic, orbital and electronic orderings in condensed matter systems.

Electrically manipulating the quantum properties of nano-objects, such as atoms or molecules, is typically done using scanning tunnelling microscopes and lateral junctions. The resulting nanotransport path is well established in these model devices. Societal applications require transposing this knowledge to nano-objects embedded within vertical solid-state junctions, which can advantageously harness spintronics to address these quantum properties thanks to ferromagnetic electrodes and high-quality interfaces. The challenge here is to ascertain the device's effective, buried nanotransport path, and to electrically involve these nano-objects in this path by shrinking the device area from the macro- to the nano-scale while maintaining high structural/chemical quality across the heterostructure. We've developed a low-tech, resist- and solvent-free technological process that can craft nanopillar devices from entire in-situ grown heterostructures, and use it to study magnetotransport between two Fe and Co ferromagnetic electrodes across a functional magnetic CoPc molecular layer. We observe how spin-flip transport across CoPc molecular spin chains promotes a specific magnetoresistance effect, and alters the nanojunction's magnetism through spintronic anisotropy. In the process, we identify three magnetic units along the effective nanotransport path thanks to a macrospin model of magnetotransport. Our work elegantly connects the until now loosely associated concepts of spin-flip spectroscopy, magnetic exchange bias and magnetotransport due to molecular spin chains, within a solid-state device. We notably measure a 5.9meV energy threshold for magnetic decoupling between the Fe layer's buried atoms and those in contact with the CoPc layer forming the so-called 'spinterface'. This provides a first insight into the experimental energetics of this promising low-power information encoding unit.

Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique, we have successfully fabricated metal semiconductor metal CoFeB/MgO/Si/Pt vertical structures. We hereby demonstrate pure spin-current injection and transport in the perpendicular current flow geometry over a distance larger than 2\mu m in n-type Si at room temperature. In those experiments, a pure propagating spin-current is generated via ferromagnetic resonance spin-pumping and converted into a measurable voltage by using the inverse spin-Hall effect occurring in the top Pt layer. A systematic study by varying both Si and MgO thicknesses reveals the important role played by the localized states at the MgO/Si interface for the spin-current generation. Proximity effects involving indirect exchange interactions between the ferromagnet and the MgO/Si interface states appears to be a prerequisite to establish the necessary out-of-equilibrium spin-population in Si under the spin-pumping action.

To mitigate climate change, our global society is harnessing direct (solar irradiation) and indirect (wind/water flow) sources of renewable electrical power generation. Emerging direct sources include current-producing thermal gradients in thermoelectric materials, while quantum physics-driven processes to convert quantum information into energy have been demonstrated at very low temperatures. The magnetic state of matter, assembled by ordering the electron's quantum spin property, represents a sizeable source of built-in energy. We propose to create a direct source of electrical power at room temperature (RT) by utilizing magnetic energy to harvest thermal fluctuations on paramagnetic (PM) centers. Our spin engine rectifies current fluctuations across the PM centers' spin states according to the electron spin by utilizing so-called 'spinterfaces' with high spin polarization. As a rare experimental event, we demonstrate how this path can generate 0.1nW at room temperature across a 20 micron-wide spintronic device called the magnetic tunnel junction, assembled using commonplace Co, C and MgO materials. The presence of this path in our experiment, which also generates very high spintronic performance, is confirmed by analytical and ab-initio calculations. Device downscaling, and the ability for other materials systems than the spinterface to select a transport spin channel at RT widens opportunities for routine device reproduction. The challenging control over PM centers within the tunnel barrier's nanotransport path may be addressed using oxide- and organic-based nanojunctions. At present densities in MRAM products, this spin engine could lead to 'always-on' areal power densities well beyond that generated by solar irradiation on earth. Further developing this concept can fundamentally alter our energy-driven society's global economic, social and geopolitical constructs.

All-optical ultrafast magnetization switching in magnetic material thin film without the assistance of an applied external magnetic field is being explored for future ultrafast and energy-efficient magnetic storage and memories. It has been shown that femto-second light pulses induce magnetization reversal in a large variety of magnetic materials. However, so far, only GdFeCo-based ferrimagnetic thin films exhibit magnetization switching via a single optical pulse. Here we demonstrate the single-pulse switching of Co/Pt multilayers within a magnetic spin-valve structure ([Co/Pt] / Cu / GdFeCo) and further show that the four possible magnetic configurations of the spin valve can be accessed using a sequence of single femto-second light pulses. Our experimental study reveals that the magnetization final state of the ferromagnetic [Co/Pt] layer is determined by spin-polarized hot electrons generated by the light pulse interactions with the GdFeCo layer. This work provides a new approach to deterministically switch ferromagnetic layers and a pathway to engineering materials for opto-magnetic multi-bit recording.

The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field. The injection of spin polarized electrons is achieved by combining ultrathin CoFeB electrodes on top of a spin-LED device with p-type InGaAs quantum dots in the active region. We measure an Overhauser shift of several $\mu$eV at zero magnetic field for the positively charged exciton (trion X$^+$) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. This study paves the way for electrical control of nuclear spin polarization in a single quantum dot without any external magnetic field., Comment: initial version, final version to appear in ACS Nano Letters

The quantum mechanical tunnelling process conserves the quantum properties of the particle considered. As applied to solid-state tunnelling (SST), this physical law was verified, within the field of spintronics, regarding the electron spin in early experiments across Ge tunnel barriers, and in the 90s across Al2O3 barriers. The conservation of the quantum parameter of orbital occupancy, as grouped into electronic symmetries, was observed in the '00s across MgO barriers, followed by SrTiO3 (STO). Barrier defects, such as oxygen vacancies, partly conserve this electronic symmetry. In the solid-state, an additional subtlety is the sign of the charge carrier: are holes or electrons involved in transport? We demonstrate that SST across MgO magnetic tunnel junctions (MTJs) with a large resistance-area (RA) product involves holes by examining how shifting the MTJ's Fermi level alters the ensuing barrier heights defined by the barrier's oxygen vacancies. In the process, we consolidate the description of tunnel barrier heights induced by specific oxygen-vacancy induced localized states. Our work opens prospects to understand the concurrent observation of high TMR and spin transfer torque across MgO-based nanopillars., Comment: 8 pages including 2 figures

Domain wall displacement in Co/Pt thin films induced by not only fs- but also ps-laser pulses is demonstrated using time-resolved magneto-optical Faraday imaging. We evidence multi-pulse helicity-dependent laser-induced domain wall motion in all-optical switchable Co/Pt multilayers with a laser energy below the switching threshold. Domain wall displacement of about 2 nm per 2- ps pulse is achieved. By investigating separately the effect of linear and circular polarization, we reveal that laser-induced domain wall motion results from a complex interplay between pinning, temperature gradient and helicity effect. Then, we explore the microscopic origin of the helicity effect acting on the domain wall. These experimental results enhance the understanding of the mechanism of all-optical switching in ultra-thin ferromagnetic films., Comment: 8 pages, 4 figures

We have investigated ultrafast quenching of the Tb4f magnetic order in Co74Tb26 alloys, induced by femtosecond hot-electrons pulses. The hot-electron pulses were produced in specific non-magnetic capping layers by infrared fs laser pulses. Our experimental results show that sub-picosecond dynamics of Tb4f magnetic moments can be induced by non-thermal and thermal hot-electrons. We further demonstrate that the demagnetization efficiencies of non-thermal and thermal hot electrons are similar. However, the characteristic demagnetization times show values of 0.35 ps for non-thermal hot-electrons excitations and 1.2 ps for thermal hot-electrons excitations. We explain this temporal elongation by the propagation time of thermal hot-electrons through the 15 nm thick CoTb film., Comment: 14 pages, 3 Figures and 1 Table

Femtosecond laser induced ultrafast magnetization dynamics have been studied in multisublattice CoxDy1-x alloys. By performing element and time-resolved X-ray spectroscopy, we distinguish the ultrafast quenching of Co3d and Dy4f magnetic order when the initial temperatures are below (T=150K) or above (T=270K) the temperature of magnetic compensation (Tcomp). In accordance with former element-resolved investigations and theoretical calculations, we observe different dynamics for Co3d and Dy4f spins. In addition we observe that, for a given laser fluence, the demagnetization amplitudes and demagnetization times are not affected by the existence of a temperature of magnetic compensation. However, our experiment reveals a twofold increase of the ultrafast demagnetization rates for the Dy sublattice at low temperature. In parallel, we measure a constant demagnetization rate of the Co3d sublattice above and below Tcomp. This intriguing difference between the Dy4f and Co3d sublattices calls for further theoretical and experimental investigations., Comment: 6 Figure, 2 Tables

Current induced magnetization manipulation is a key issue for spintronic application. Therefore, deterministic switching of the magnetization at the picoseconds timescale with a single electronic pulse represents a major step towards the future developments of ultrafast spintronic. Here, we have studied the ultrafast magnetization dynamics in engineered Gdx[FeCo]1-x based structure to compare the effect of femtosecond laser and hot-electrons pulses. We demonstrate that a single femtosecond hot-electrons pulse allows a deterministic magnetization reversal in either Gd-rich and FeCo-rich alloys similarly to a femtosecond laser pulse. In addition, we show that the limiting factor of such manipulation for perpendicular magnetized films arises from the multi-domain formation due to dipolar interaction. By performing time resolved measurements under various field, we demonstrate that the same magnetization dynamics is observed for both light and hot-electrons excitation and that the full magnetization reversal take place within 5 ps. The energy efficiency of the ultra-fast current induced magnetization manipulation is optimized thanks to the ballistic transport of hot-electrons before reaching the GdFeCo magnetic layer.

Magnetization manipulation in the absence of an external magnetic field is a topic of great interest, since many novel physical phenomena need to be understood and promising new applications can be imagined. Cutting-edge experiments have shown the capability to switch the magnetization of magnetic thin films using ultrashort polarized laser pulses. In 2007, it was first observed that the magnetization switching for GdFeCo alloy thin films was helicity-dependent and later helicity-independent switching was also demonstrated on the same material. Recently, all-optical switching has also been discovered for a much larger variety of magnetic materials (ferrimagnetic, ferromagnetic films and granular nanostructures), where the theoretical models explaining the switching in GdFeCo films do not appear to apply, thus questioning the uniqueness of the microscopic origin of all-optical switching. Here, we show that two different all-optical switching mechanisms can be distinguished; a "single pulse" switching and a "cumulative" switching process whose rich microscopic origin is discussed. We demonstrate that the latter is a two-step mechanism; a heat-driven demagnetization followed by a helicity-dependent remagnetization. This is achieved by an all-electrical and time-dependent investigation of the all-optical switching in ferrimagnetic and ferromagnetic Hall crosses via the anomalous Hall effect, enabling to probe the all-optical switching on different timescales., Comment: 1 page, LaTeX; classified reference numbers

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel is challenging. Here we demonstrate the electrical spin injection and detection in a multilayer MoS2 semiconducting channel. A magnetoresistance (MR) around 1% has been observed at low temperature through a 450nm long, 6 monolayer thick channel with a Co/MgO spin injector and detector. From a systematic study of the bias voltage, temperature and back-gate voltage dependence of MR, it is found that the hopping via localized states in the contact depletion region plays a key role for the observation of the two-terminal MR. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel for in-plan spin injection. The underestimated long spin diffusion length (~235nm) and large spin lifetime (~46ns) open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.

Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2 nm) under which electron phase coherence is conserved. In the present study we show evidence of QW resonance states in Fe QW up to12 nmthick and at room temperature in fully epitaxial doubleMgAlOxbarrier magnetic tunnel junctions. The electron phase coherence displayed in this QWis of unprecedented quality because ofa homogenous interface phase shift due to the small lattice mismatch at the Fe/MgAlOx interface. The physical understanding of the critical role of interface strain on QW phase coherence will greatly promote the development of the spin-dependent quantum resonant tunneling applications., Comment: 16 pages, 3 figures 1 table

We investigate experimentally magnetic frustration effects in thermally active artificial kagome spin ice. Starting from a paramagnetic state, the system is cooled down below the Curie temperature of the constituent material. The resulting magnetic configurations show that our arrays are locally brought into the so-called spin ice 2 phase, predicted by at-equilibrium Monte Carlo simulations and characterized by a magnetic charge crystal embedded in a disordered kagome spin lattice. However, by studying our arrays on a larger scale, we find unambiguous signature of an out-of-equilibrium physics. Comparing our findings with numerical simulations, we interpret the efficiency of our thermalization procedure in terms of kinetic pathways that the system follows upon cooling and which drive the arrays into degenerate low-energy manifolds that are hardly accessible otherwise., Comment: 6 pages, 4 figures

The Righi-Leduc effect refers to the thermal analogue of the Hall effect, for which the electric current is replaced by the heat current and the electric field by the temperature gradient. In both cases, the magnetic field generates a transverse force that deviates the carriers (electron, phonon, magnon) in the direction perpendicular to the current. In a ferromagnet, the magnetization plays the role of the magnetic field, and the corresponding effect is called anomalous Hall effect. Furthermore, a second transverse contribution due to the anisotropy, the planar Hall effect, is superimposed to the anomalous Hall effect. We report experimental evidence of the thermal counterpart of the Hall effects in ferromagnets, namely the magnon Hall effect (or equivalently the anomalous Righi-Leduc effect) and the planar Righi-Leduc effect, measured on ferromagnets that are either electrical conductor (NiFe) or insulator (YIG). The study shows the universal character of these new thermokinetic effects, related to the intrinsic chirality of the anisotropic ferromagnetic degrees of freedom., Comment: Letter (12 pages preprint format) and Supplementary materials (13 pages)

Results of a comprehensive study by means of Brillouin spectroscopy, complemented by Ferromagnetic Resonance characterization, of spin waves (SW) propagating in Py/Pt bi-layers, characterized by pronounced interface Dzyaloshinskii-Moriya interactions (IDMI) are reported. Non-conventional wave behavior of SW travelling in opposite directions, characterized by non-reciprocity with respect to the inversion of the sign of the SW wave-number, has been revealed. The value of the effective IDMI constant D has been estimated.

We propose a mid-infrared device based on thermocouple optical antennas for light sensing and energy harvesting applications. We numerically demonstrate that antennas are able to generate low-power dc signals by beneficing of the thermoelectric properties of the metals that constitute them. We theoretically evaluate the optical-to-electrical conversion efficiency for harvesting applications and finally discuss strategies to increase its performance. Thermocouple optical antennas therefore open the route toward the design of photovoltaic devices., Comment: 16 pages, 5 figures

Magnetic frustration effects in artificial kagome arrays of nanomagnets with out-of-plane magnetization are investigated using Magnetic Force Microscopy and Monte Carlo simulations. Experimental and theoretical results are compared to those found for the artificial kagome spin ice, in which the nanomagnets have in-plane magnetization. In contrast with what has been recently reported, we demonstrate that long range (i.e. beyond nearest-neighbors) dipolar interactions between the nanomagnets cannot be neglected when describing the magnetic configurations observed after demagnetizing the arrays using a field protocol. As a consequence, there are clear limits to any universality in the behavior of these two artificial frustrated spin systems. We provide arguments to explain why these two systems show striking similarities at first sight in the development of pairwise spin correlations., Comment: 7 pages, 6 figures

We describe a 3He magnetometer capable to measure high magnetic fields (B > 0.1 Tesla) with a relative accuracy of better than 10^-12. Our approach is based on the measurement of the free induction decay of gaseous, nuclear spin polarized 3He following a resonant radio frequency pulse excitation. The measurement sensitivity can be attributed to the long coherent spin precession time T2* being of order minutes which is achieved for spherical sample cells in the regime of motional narrowing where the disturbing influence of field inhomogeneities is strongly suppressed. The 3He gas is spin polarized in-situ using a new, non-standard variant of the metastability exchange optical pumping. We show that miniaturization helps to increase T2* further and that the measurement sensitivity is not significantly affected by temporal field fluctuations of order 10^-4., Comment: 27 pages, 7 figures

We demonstrate a large electrical spin injection into GaAs at zero magnetic field thanks to an ultrathin perpendicularly magnetized CoFeB contact of a few atomic planes (1.2 nm). The spin-polarization of electrons injected into GaAs was examined by the circular polarization of electroluminescence from a Spin Light Emitting Diode with embedded InGaAs/GaAs quantum wells. The electroluminescence polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the CoFeB/MgO injector. A circular polarization degree of the emitted light as large as 20% at 25 K is achieved at zero magnetic field. Moreover the electroluminescence circular polarization is still about 8% at room temperature., Comment: *Corresponding author: yuan.lu@univ-lorraine.fr

The interplay of light and magnetism has been a topic of interest since the original observations of Faraday and Kerr where magnetic materials affect the light polarization. While these effects have historically been exploited to use light as a probe of magnetic materials there is increasing research on using polarized light to alter or manipulate magnetism. For instance deterministic magnetic switching without any applied magnetic fields using laser pulses of the circular polarized light has been observed for specific ferrimagnetic materials. Here we demonstrate, for the first time, optical control of ferromagnetic materials ranging from magnetic thin films to multilayers and even granular films being explored for ultra-high-density magnetic recording. Our finding shows that optical control of magnetic materials is a much more general phenomenon than previously assumed. These results challenge the current theoretical understanding and will have a major impact on data memory and storage industries via the integration of optical control of ferromagnetic bits., Comment: 21 pages, 11 figures

Micromagnetic properties of monopoles in artificial kagome spin ice systems are investigated using numerical simulations. We show that micromagnetics brings additional complexity into the physics of these monopoles that is, by essence, absent in spin models: besides a fractionalized classical magnetic charge, monopoles in the artificial kagome ice are chiral at remanence. Our simulations predict that the chirality of these monopoles can be controlled without altering their charge state. This chirality breaks the vertex symmetry and triggers a directional motion of the monopole under an applied magnetic field. Our results also show that the choice of the geometrical features of the lattice can be used to turn on and off this chirality, thus allowing the investigation of chiral and achiral monopoles., Comment: 10 pages, 4 figures

The accuracy of finite difference methods is related to the mesh choice and cell size. Concerning the micromagnetism of nano-objects, we show here that discretization issues can drastically affect the symmetry of the problem and therefore the resulting computed properties of lattices of interacting curved nanomagnets. In this paper, we detail these effects for the multiaxe kagome lattice. Using the Oommf finite difference method, we propose an alternative way of discretizing the nanomagnet shape via a variable moment per cell scheme. This method is shown to be efficient in reducing discretization effects., Comment: 4 pages, 5 figures

Ultrafast magnetization dynamics induced by femtosecond laser pulses have been measured in ferrimagnetic Co0.8Gd0.2, Co.74Tb.26 and Co.86Tb.14 alloys. Using element sensitivity of X-ray magnetic circular dichroism at the Co L3, Tb M5 and Gd M5 edges we evidence that the demagnetization dynamics is element dependent. We show that a thermalization time as fast as 280 fs is observed for the rare-earth in the alloy, when the laser excited state temperature is below the compensation temperature. It is limited to 500 fs when the laser excited state temperature is below the Curie temperature (Tc). We propose critical spin fluctuations in the vicinity of TC as the mechanism which reduces the demagnetization rates of the 4f electrons in transition-metal rare-earth alloys whereas at any different temperature the limited demagnetization rates could be avoided., Comment: 11 pages, 4 figures

We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model, based on sequential tunneling through the system and including spin relaxation, successfully accounts for the experimental observations for bias voltages below 0.5V, where the influence of quantum well states is negligible. A weak enhancement of conductance and shot noise, observed at some voltages (especially above 0.5V), indicates the formation of quantum well states in the middle magnetic layer. The observed results open up new perspectives for a reliable magnetic control of the most fundamental noise in spintronic structures., Comment: 8 pages, 4 figures

We perform an extensive experimental spectroscopic study of the collective spin-wave dynamics occurring in a pair of magnetic nano-disks coupled by the magneto-dipolar interaction. For this, we take advantage of the stray field gradient produced by the magnetic tip of a ferromagnetic resonance force microscope (f-MRFM) to continuously tune and detune the relative resonance frequencies between two adjacent nano-objects. This reveals the anti-crossing and hybridization of the spin-wave modes in the pair of disks. At the exact tuning, the measured frequency splitting between the binding and anti-binding modes precisely corresponds to the strength of the dynamical dipolar coupling $\Omega$. This accurate f-MRFM determination of $\Omega$ is measured as a function of the separation between the nano-disks. It agrees quantitatively with calculations of the expected dynamical magneto-dipolar interaction in our sample.

We investigate electronic transport in epitaxial Fe(100)/MgO/Fe/MgO/Fe double magnetic tunnel junctions with soft barrier breakdown (hot spots). Specificity of these junctions are continious middle layer and Nitrogen doping of the MgO barriers which provides soft breakdown at biases about 0.5V. In the junctions with hot spots we observe quasi-periodic changes in the resistance as a function of bias voltage which point out formation of quantum well states in the middle Fe continuous free layer. The room-temperature oscillations have been observed in both parallel and antiparallel magnetic configurations and for both bias polarizations. A simple model of tunneling through hot spots in the double barrier magnetic junction is proposed to explain qualitatively this effect., Comment: 11 pages, 4 figures

We report on the strong influence of Carbon doping on 1/f noise in fully epitaxial Fe/MgO(100)12ML/Fe magnetic tunnel junctions in comparison with undoped junctions with a large density of barrier defects. Carbon influences the relaxation of defects, the reconstruction of the interface and the symmetry transformation of interface resonance states, which are suggested to contribute to the strong reduction of the 1/f noise. Our study demonstrates that doping with light elements could be a versatile tool to improve the electron transport and noise in epitaxial magnetic tunnel junctions with large density of barrier defects., Comment: 8 pages, 3 figures

We report on spin polarization reduction by incoherent tunneling in realistic single crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJ) compared to reference Fe/MgO/Fe. A large density of misfit dislocations in the Heusler based MTJs has been insured by a thick MgO barrier and its 3.8% lattice mismatch with the Co2FeAl electrode. Our analysis implicates a correlated structural-transport approach. The crystallographic coherence, in the real space, is investigated using High Resolution Transmission Electron Microscopy phase analysis. The electronic transport experiments in variable temperature, fitted with a theoretical extended-Glazman-Matveev model, address different levels of the tunneling mechanisms from direct to multi-center hopping. We demonstrate a double negative impact of dislocations, as extended defects, on the tunneling polarization. Firstly, the breaking of the crystal symmetry destroys the longitudinal and lateral coherence of the propagating Bloch functions. This affects the symmetry filtering efficiency of the Delta_1 states across the (100) MgO barriers and reduces the associated effective tunneling polarization. Secondly, dislocations provide localized states within the MgO gap. This determines temperature activated spin-conserving inelastic tunneling through chains of defects which are responsible for the one order of magnitude drop of the tunnel magnetoresistance from low to room temperature.

Crystallographic and spin polarized transport properties of (100) textured and (100) epitaxial Fe/MgO/Fe magnetic tunnel junctions are compared. Strong similarities in the transport properties show that structural coherence and magnetic quality at the 25 nm grain scale in textured junctions are sufficient to issue signatures of the spin polarized transport specific to a single crystal junction. This demonstrates that the lateral coherence of the Bloch tunneling wave function is identically limited in both systems. Our analysis leads to model the textured tunnel junction as a juxtaposition of nanometer sized single crystal junctions, placed in parallel., Comment: Published in APPLIED PHYSICS LETTERS Volume: 100 Issue: 7 Article Number: 072408 DOI: 10.1063/1.3687174 Published: FEB 13 2012

This paper shows the correlation between chemical order, lattice strains and magnetic properties of Heusler Co2FeAl films epitaxially grown on MgO(001). A detailed magnetic characterization has been performed using vector field magnetometery combined with numerical Stoner-Wohlfarth analysis. We demonstrate the presence of three types of in-plane anisotropies: one biaxial, as expected for the cubic symmetry, and other two uniaxial ones. The three anisotropies show different behavior with the annealing temperature. The biaxial anisotropy shows a monotonous increase. The uniaxial anisotropy, parallel with the hard biaxial axes, related to the chemical homogeneity, decreases, while the other, supposed to have magnetostatic origin, remains constant., Comment: Published in PHYSICAL REVIEW B Volume: 84 Issue: 13 Article Number: 134413 DOI: 10.1103/PhysRevB.84.134413 Published: OCT 12 2011

Symmetry dependent scattering effect by minority interface resonance states (IRS) has been evidenced in full-epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs). Two types of samples with and without carbon doped bottom Fe/MgO interface were fabricated to represent two different types of IRS in the minority channel in the vicinity of the Fermi level. By analysis of the first- principles calculated local density of states (LDOS) and the temperature dependence of conductance in parallel configuration at low bias, we show that the IRS in the carbon free sample is dominated by the delta5 symmetry. This has a major contribution on the majority deltai to delta5 channel scattering and explains the enhancement of the delta5 conductance in the parallel configuration at low temperature. Furthermore, the spectral composition of the IRS in the carbon doped interface is found to be dominated by the delta1 symmetry, which is responsible for the suppression of delta5 channel in the parallel conductance., Comment: We recently find that the explication in this paper is not correct. We are continuing to study the mechanism