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Non-uniformities in the plasma parameters in a magnetized inductively coupled plasma (M-ICP) etcher were investigated. Further in text of this article the silicon dioxide and the photoresist are called as abbreviations the oxide and the PR accordingly. The etch results of an oxide and PR were correlated with the non-uniformity characteristics of the plasma parameters. The plasma density non-uniformities and the oxide etch-rate non-uniformities in M-ICP-V (9.28 and 2.4%, respectively) were lower than those in M-ICP-A (14.6% and 21.4%, respectively) or ICP (13.03 and 5.2%, respectively). The profile angle of the etched silicon dioxide in ICP, M-ICP-A, and M-ICP-V configurations were also measured and the angle in M-ICP-V was approximately 85° and similar in ICP.

With the observed rise in temperature, many researchers have tried to identify the causes of such climate change to help mitigate its effects. The objective of this study is to determine whether, under the same carbon dioxide (CO2) concentrations, CO2 with lower cloud coverage would raise the temperature at a greater rate than CO2 with higher cloud coverage. The hypothesis was tested through big data analysis and modeling. The relationships between the temperature and the CO2 emissions, the temperature and the cloud coverage, and the CO2 emissions and the cloud coverage were identified using the Pearson’s correlation test. The data analysis concluded that the relationship between the temperature and the CO2 emission is positively proportional with a significant correlation. The relationship between the cloud coverage and the temperature and the relationship between the CO2 emissions and the cloud coverage were determined to be negatively proportional with significant correlations. For modeling, the temperature increased more rapidly as cloud coverage shrank. The results supported the hypothesis that the cloud coverage mitigates warming effects created by CO2 emissions.

Humanity is witnessing the next generation industrial revolution, so-called the fourth industrial revolution. In the fourth industrial revolution era, the high level of ICTs (Information and Communication Technologies) such as AI (Artificial Intelligence), IoT (Internet of Things), big data, cloud system will be converged and pervaded throughout the society which may lead to innovative changes in our life. Especially, CPS (Cyber Physical System) and automated driving are two of the most representative keywords of the fourth industrial revolution. In this paper, high-tech and policy strategies for SMEs (Small- and Medium-sized Enterprises) in Korea in the era of CPS and automated driving were investigated.

Correlation between coil configurations and the discharge characteristics such as plasma density and the electron temperature in a newly designed magnetized inductively coupled plasma (M-ICP) etcher were investigated. Radial and axial magnetic flux density distributions as well as the magnetic flux density on the center of the substrate holder were controllable by placing multiple circular coils around the etcher. The plasma density increased up to 60.7% by arranging coils (or optimizing magnetic flux density distributions inside the etcher) properly although the magnetic flux density on the center of the substrate holder was fixed at 7 Gauss.

In this paper, the proper education model of management of technology (MoT) for small- and medium-sized enterprises (SMEs) was proposed. Considering the regional industrial structure in Chungcheongnam-do and global trend change, it is concluded that ‘Technology commercialization’, ‘Management of converging technologies’, and ‘Globalization of technologies’ are key curriculums for training people who would play a pivotal role in promoting SMEs to global hidden champion.

Spatial distributions of magnetic flux density in a newly designed magnetized inductively coupled plasma (MICP) etcher were investigated. Radial and axial magnetic flux densities as well as the magnetic flux density on the center of the substrate holder were controllable by placing multiple circular coils around the etcher properly. The plasma density non-uniformity in M-ICP (25 Gauss) can be reduced (1.4%) compared to that in ICP (16.7%) when the neutral gas pressure was 0.67 Pa and a right-hand circularly polarized wave (R-wave) can be propagated in to the etcher by making magnetic flux density increases both radially and axially from the center of the substrate holder.

New ion beam etcher (IBE) using a magnetized inductively coupled plasma (M-ICP) has been developed. The magnetic flux density distributions inside the upper chamber, where the plasma is generated by inductive coupling, were successfully optimized by arranging a pair of circular coils very carefully. More importantly, the proposed M-ICP IBE exhibits higher etch rate than ICP.

Global semiconductor market is now in a period of transition such as limitation in the fine process, preparation for next generation memory device, and the development of system semiconductor for internet of things (IoT) or big data. In this paper, the global competitiveness of domestic conglomerates in global semiconductor market (especially in memory and non-memory chip markets) was investigated. Furthermore, propulsive strategies for domestic semiconductor companies were suggested so that they can survive in a rapidly changing global semiconductor industry.

By varying the radio frequency-bias power in an inductively coupled CF 4 plasma, we have modified the nanoscale morphology and chemical bond structure of polyethylene terephthalate (PET) surface. Specifically, the ion impingement increased the surface roughness and created CFn (n= 2, 3) functional groups on the PET surface, making it hydrophobic. Also observed was a significant increase in the hydrophobicity of the plasma-modified surfaces over the course of several days following the treatment (a hydrophobic recovery). X-ray photoelectron spectroscopy analysis revealed that this spontaneous transformation to a more hydrophobic surface is accompanied by a decrease in the fluoride ion content. The change of plasma density and electron temperature with increasing bias power were discussed. In addition, the change of the ion energy distribution with increasing bias power was investigated.

In this article, the effects of the magnetic field on the through-silicon-via (TSV) etching characteristics in an inductively-coupled plasma (ICP) were investigated and the results were compared with those in an unmagnetized ICP. The densities of the radicals in the SF6/O2 plasma were measured by using actinometry, and the ion energy distribution and flux of the Ar plasma were determined by using an ion energy analyzer in order to understand the differences in etching behaviors. The silicon etching rate in the M-ICP was three times faster than that in the unmagnetized ICP under the same RF power and gas conditions. However, the etch anisotropy in the M-ICP was rather poor compared to that in the ICP. In order to observe differences in the etching characteristics, we varied the SF6/O2 gas mixing ratio and the pressure. Lowering pressure at the optimal ratio for the SF6/O2 gas mixture influenced the ratio of F radicals to O radicals and the mean free path of ions. Consequently, a high etching rate with good anisotropy in TSV etching could be achieved in a M-ICP.

We have studied the characteristics of the application of a high-gamma cathode material to a plasma display panel (PDP) for the improvement of the secondary electron emission property and consequent luminous efficacy. It had been found that the PDP with the MgCaO cathode layer and the SiO2 diffusion barrier, which can block the impurity diffusion from the underlying dielectric layer, is stable during the normal fabrication process and showed improved luminous efficacy at a lower sustain voltage compared with those of the conventional PDP with MgO.

In this paper, we present finite element method simulations of top-emitting organic light-emitting diodes for designing optimized red, green, and blue full-color device structures. The OLED structures in the simulation are used to evaluate the device parameters, such as the outcoupling efficiency, electroluminescence spectra, and angular emission characteristics on organic layers with varying thickness and different cathodes. The numerical study also extracts these parameters for nano-structured devices. By observing the agreement between the simulated and measured data precisely, our simulations show capability of predicting the fabricated device results. (C) 2016 Optical Society of America

The address discharge characteristics of the plasma display with a MgO single cathode layer and the one with a MgO-SrO double cathode layer were investigated. In particular, the conventional waveform with a positive-going ramp and the proposed waveform with a negative-going ramp were applied in order to demonstrate that the polarity of the scan electrode during the reset period affects the dynamic voltage margin and the address discharge time lag. It was confirmed that the total address discharge time lag of the plasma display with the MgO-SrO double cathode layer decreased by about 550 ns by applying the proposed waveform with the negative-going ramp.

In this paper, the address discharge characteristics of high-Xe PDPs with high-gamma cathode materials were investigated. It will be shown that the address discharge characteristics such as the dynamic voltage margin and the address discharge time lag of high-Xe PDP with MgO-SrO double cathode layer and one with MgCaO single cathode layer can be improved by inducing stable, continuous weak discharges during the reset period with a newly designed waveform. The deposition of pure MgO powder on high gamma cathode material has also proved to be effective in reducing the address discharge time lag of high-Xe PDP.

In this paper, it will be shown that we can reduce the driving voltage and improve the luminance and luminous efficacy of Plasma Display Panel(PDP) significantly by blocking the diffusion of impurities into the cathode layer which occurs during the high temperature process like panel assembly. The TOF-SIMS(Time-of-Flight Secondary Ion Mass Spectrometry) results show that the diffusion of impurities like Al, Na and K into the cathode layer can be effectively prevented by the adoption of a blocking layer made of SiO2. Another beneficial effect is the significant reduction of the aging time. It has been confirmed through the panel experiment that the impurity diffusion barrier is effective in reducing the voltage, aging time and increasing the luminous efficacy for both of the PDPs with a single MgO and a SrO-MgO double cathode layer with more spectacular improvements in the latter case.

Top-emitting organic light-emitting diodes(TEOLEDs) are drawing interest as future devices for both high-quality display and lighting. However, the currentTEOLEDs have external quantum efficiencies of approximately 20%, which still need improvement. To attain high device efficiencies in TEOLEDs, waveguide and surface plasmon polariton modes should be minimised. Many efforts have been made using nano- or micrometre-scale periodic gratings to extract the confined photons. However, significant angular distortion or colour shifts occur as the Bragg condition calls for. Here, an effective method is demonstrated for enhancing the light extraction efficiency from TEOLEDs employing a mask-free plasma-etched polymer surface with stochastically distributed nano-hemispheres. TEOLEDs with the stochastic polymer surface allowed us to achieve a device efficiency enhancement up to 1.55-fold relative to conventional devices without introducing spectral changes and angular emission distortion, unlike periodic grating-embedded devices. Because of the independence of the improvement from the particular emission wavelengths, the proposed TEOLEDs are attractive and practical for use in full colour and white lighting as well as display applications.

Spatial distributions of various plasma parameters such as plasma density, electron temperature, and radical density in an inductively coupled plasma (ICP) and a magnetized inductively coupled plasma (M-ICP) were investigated and compared. Electron temperature in between the rf window and the substrate holder of M-ICP was higher than that of ICP, whereas the one just above the substrate holder of M-ICP was similar to that of ICP when a weak (

The behavior of a particle cloud in plasma etching reactors at the moment when radio frequency (RF) power changes, that is, turning off and transition steps, was observed using the laser-light-scattering method. Two types of reactors, dual-frequency capacitively coupled plasma (CCP) and the hybrid CCP/inductively coupled plasma (ICP), were set up for experiments. In the hybrid CCP/ICP reactor (hereafter ICP reactor), the position and shape of the cloud were strongly dependent on the RF frequency. The particle cloud becomes larger and approaches the electrode as the RF frequency increases. By turning the lower frequency power off later with a small delay time, the particle cloud is made to move away from the electrode. Maintaining lower frequency RF power only was also helpful to reduce the particle cloud size during this transition step. In the ICP reactor, a sufficient bias power is necessary to make a particle trap appear. A similar particle cloud to that in the CCP reactor was observed around the sheath region of the lower electrode. The authors can also use the low-frequency effect to move the particle cloud away from the substrate holder if two or more bias powers are applied to the substrate holder. The dependence of the particle behavior on the RF frequencies suggests that choosing the proper frequency at the right moment during RF power changes can reduce particle contamination effectively.

The change of –OH and –CH3 component ratios in Fourier transform-infrared analysis of low-k materials during photoresist (PR) ashing processes were compared to assess the differences in the damages to low-k materials in a reactive ion etch (RIE) chamber and a magnetized-inductively coupled plasma (M-ICP) chamber. In M-ICP, the PR ashing rate was 28.1% higher than that of RIE, but the low-k material damage in M-ICP decreased when typical ashing conditions were used in each machine. The dependences of low-k material damage and PR ashing rate on the pressure, source power, and bias power in the M-ICP chamber were studied. We measured the ion energy distributions using an ion energy analyzer from which the flux could be also obtained. We found that the PR ashing rate increased as the ion flux increased, while the low-k material damage also increased as the ion flux and the incident ion energy increased. However, as the pressure decreased, the ion flux increased dramatically and the ion energy decreased. As a result, the PR ashing rate could be high and the low-k material damage low.

Plasma display panel (PDP) with MgO-SrO double cathode layer and SiO(2) diffusion barrier is proposed to make the SrO layer free of contaminations. Time of flight-secondary ion mass spectrometry (TOF-SIMS) analysis shows the diffusion of impurities, like Na and K, can be effectively blocked while a new SrO layer is formed on top of the MgO layer. This structure shows that high Xe gases can be used to improve the luminous efficacy 2.3 times and decrease the voltage margin more than 10 V compared to the conventional PDP using Ne-Xe 15%. The aging time was also significantly decreased to 3-4 h.

The mechanism to realize high luminous efficacy in a plasma display panel fabricated with a cathode material possessing a high secondary electron emission coefficient (γ) for Ne and Xe ions was studied via three-dimensional numerical simulation. When a high γ cathode material is used, the increased electron heating efficacy is responsible for increasing vacuum ultraviolet (VUV) efficacy with 10% Xe content gas. However, the continued availability of sufficient secondary electrons during the dynamic moving phase of the cathode sheath in which the electric field remains weakened causes increasing VUV efficacy with 30% Xe content gas. It was found that the improvement of the luminous efficacy of the plasma display panel with a high γ cathode material is maximized under the condition of high Xe content gas because of the simultaneous increase of the electron heating efficacy and Xe excitation efficacy.

A double protecting layer composed of MgO layer deposited on top of the SrO prevents SrO from the contamination by air and as a result, low driving voltage and high luminous efficacy PDP can be realized albeit a much prolong aging time is required. We adopted a special process to reduce the long aging time for the PDP with SrO-MgO double protective layer and confirmed that it can be comparable to that of the single MgO layer. The panel showed much improved luminous efficacy at reduced voltages.

— A new electrode structure for plasma-display panels (PDPs) is proposed, which decreases the panel capacitance by effectively decreasing the electrode area and increasing the discharge efficacy. Although the electrode area is decreased, the proposed structure does not require an increase in operating voltage and can improve the discharge efficacy by limiting the discharge current. The effect of panel capacitance reduction of the suggested electrode structure contributes to power-consumption reduction in the entire PDP system by reducing the dissipative power due to the charging current of the panel capacitance. The effects of panel-capacitance reduction by using the new electrode structure were confirmed by comparing the charging-current waveforms and directly measuring the capacitances of various panels with conventional and new electrode structures.