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This paper reports the first known investigation of power dissipation and electrical breakdown in aerosol-jet-printed (AJP) graphene interconnects. The electrical performance of aerosol-jet printed (AJP) graphene was characterized using the Transmission Line Method (TLM). The electrical resistance decreased with increasing printing pass number (n); the lowest sheet resistance measured was 1.5 kΩ/sq. for n = 50. The role of thermal resistance (R TH ) in power dissipation was studied using a combination of electrical breakdown thermometry and infrared (IR) imaging. A simple lumped thermal model ([Formula: see text]) and COMSOL Multiphysics was used to extract the total R TH , including interfaces. The R TH of AJP graphene on Kapton is ~27 times greater than that of AJP graphene on Al 2 O 3 with a corresponding breakdown current density 10 times less on Kapton versus Al 2 O 3 .

A complex of salmon milt deoxyribonucleic acid (DNA) and the cationic surfactant cetyltrimethylammonium (CTMA) forms an organic-soluble biomaterial that can be readily incorporated within an organically modified silane-based xerogel. The photoluminescence (PL) intensity and excited-state luminescence lifetime of tris(4,7'-diphenyl-1,10'-phenanathroline) ruthenium(II) [(Ru(dpp)3](2+), a common O2 responsive luminophore, increases in the presence of DNA-CTMA within the xerogel. The increase in the [Ru(dpp)3](2+)excited-state lifetime in the presence of DNA-CTMA arises from DNA intercalation that attenuates one or more non-radiative processes, leading to an increase in the [Ru(dpp)3](2+) excited-state lifetime. Prospects for the use of these materials in an oxygen sensor are demonstrated.

Measurements of optical transmission and several thermal properties of Hg(1-x)Cd(x)Te alloys are reported for a few values of the alloy composition parameter x, which was determined by a microprobe technique. The values of the thermal diffusivity, specific heat, and thermal conductivity were measured using the laser-flash method. These results are reported at four discrete temperatures between 90 and 400 K and compared to those of three well-characterized semiconductor materials: Si, InAs, and InSb.