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Nb3Sn is a promising thin film material for superconducting radio frequency (SRF) applications. Although surface resistivity, critical temperature, and critical field are advantageous in comparison to pure Nb, currently the performance of Nb3Sn is lacking behind due to its complex defect structure and phase inhomogeneities. In this work, the influence of the kinetic energy of the deposited particles on the defect structure in Nb3Sn thin films synthesized at low temperatures is investigated. A combination of extended x-ray absorption fine structure analysis, x-ray absorption spectroscopy mapping, and transmission electron microscopy reveals an improved local order and elemental homogeneity of the Nb3Sn films induced by higher kinetic energies of the elemental species during deposition. Even more, these process conditions lead to suppressed local inhomogeneities at grain boundaries, which can be one of the causes of critically reduced superconducting properties of low temperature sputter-coated Nb3Sn thin films. Finally, we show that the magnetic field-induced reduction of critical currents across weak-links formed at grain boundaries can be eliminated by the suggested materials' synthesis. [ABSTRACT FROM AUTHOR]

We report on fabrication and detailed characterization of point-type graphene emitters, which can be further used as electron sources in modern vacuum devices. Two-dimensional free-standing and triangular-shaped field emitters with the tip angles of 30°, 60°, and 90° and a height of ∼1 mm were made of thin graphene films of varying thicknesses (2.5-μm and 8-μm). The field emission properties of these emitters were systematically investigated by different measurement techniques. Wider and thicker graphene film emitters exhibited better stability and provided higher emission currents (up to ∼100–420 μA). The short-term current fluctuations stayed within 8%–14%. The graphene film emitter with a tip angle of 90° and 8-μm thick yielded a high field emission current of up to 2.2 mA at 9 V/μm. All emitters reproducible showed a non-linear Fowler–Nordheim behavior, which was correlated with the electron energy spectroscopy results. High-resolved energy spectra showed that up to three discrete peaks can be observed from the graphene edges at currents of <1 μA. The integral energy distributions of electrons at higher currents showed single broad emission spectra with a width of up to 1–2 eV. Additionally, graphene point emitters were characterized in various vacuum environments (Xe, Ar, N2, H2, O2, and air), different pressure levels (2 × 10−4 Pa, 2 × 10−3 Pa, and 2 × 10−2 Pa), and at various distances between the anode and the graphene emitter tip. The results showed that graphene emitters can operate in non-ultrahigh vacuum conditions, and further optimization of the vacuum gap could result in a lower turn-on voltage. [ABSTRACT FROM AUTHOR]

Flat Sb-doped germanium (100) crystals were investigated in the triode configuration under pulsed tunable laser illumination (pulse duration tlaser=3.5 ns and photon energy hv =0.54-5.90 eV) and under DC voltages <104 V. Large bunch charges up to ~1 µC were extracted from the cathodes for laser pulses >1 MW/cm² corresponding to a high quantum efficiency up to 3.3% and cathode currents up to 417 A. This laser-induced explosive electron emission (EEE) from Ge was characterized by its voltage-, laser power- and hv-sensitivity. The analysis of the macroscopic surface damage caused by the EEE is included as well. Moreover, we have carried out first direct measurements of electron energy distributions produced during the EEE from the Ge samples. The measured electron spectra hint for electron excitations to the vacuum level of the bulk and emission from the plasma plume with an average kinetic energy of ~0.8 eV. [ABSTRACT FROM AUTHOR]

We have investigated the properties of black Si field emitter arrays under strong electric fields and laser illumination. A low onset field of 1.8 MV/m for an emission current of 1?nA was obtained. A pronounced saturation region of the dark and photo-enhanced current was observed, which provided a short-term stability of 0.1% at 0.4 μA and 0.7% at 1.0 μA, respectively. As maximum value for the photosensitivity, an on-off current switching ratio of 43 reaching about 13 μA was achieved at a laser power of 15 mW. Electron spectra in the dark and under laser illumination are presented, showing a current and light-sensitive voltage drop across the emitters as well as hints for hot electron emission. [ABSTRACT FROM AUTHOR]

We report on formation of non-crystalline Fe-silicides of various stoichiometries below the amorphized surface of crystalline Si(001) after irradiation with 5 keV Fe+ ions under off-normal incidence. We examined samples prepared with ion fluences of 0.1×1017 and 5×1017 ions cm-2 exhibiting a flat and patterned surface morphology, respectively. Whereas the iron silicides are found across the whole surface of the flat sample, they are concentrated at the top of ridges at the rippled surface. A depth resolved analysis of the chemical states of Si and Fe atoms in the near surface region was performed by combining X-ray photoelectron spectroscopy and X-ray absorption spectroscopy (XAS) using synchrotron radiation. The chemical shift and the line shape of the Si 2p core levels and valence bands were measured and associated with the formation of silicide bonds of different stoichiometric composition changing from an Fe-rich silicides (Fe3Si) close to the surface into a Si-rich silicide (FeSi2) towards the inner interface to the Si(001) substrate. This finding is supported by XAS analysis at the Fe K-edge which shows changes of the chemical environment and the near order atomic coordination of the Fe atoms in the region close to surface. Because a similar Fe depth profile has been found for samples co-sputtered with Fe during Kr+ ion irradiation, our results suggest the importance of chemically bonded Fe in the surface region for the process of ripple formation. [ABSTRACT FROM AUTHOR]

The structure/property relationships of fluorochlorozirconate glass ceramics as a function of divalent and trivalent europium (Eu) co-doping and thermal processing have been investigated; the influence of doping ratio on the formation of barium chloride (BaCl2) nanocrystals therein was elucidated. X-ray absorption near-edge structure spectroscopy shows that the post-thermal annealing changes the Eu valence of the as-poured glass slightly, but during the melting process Eu3+ is more strongly reduced to Eu2+, in particular, when doped as a chloride instead of fluoride compound. The Eu2+-to-Eu3+ doping ratio also plays a significant role in chemical equilibrium in the melt. X-ray diffraction measurements indicate that a higher Eu2+ fraction leads to a BaCl2 phase transition from hexagonal to orthorhombic structure at a lower temperature. [ABSTRACT FROM AUTHOR]

Time-resolved X-ray absorption spectroscopy are combined with UV-vis and Raman spectroscopies to study the in situ reduction of Ce(super 4+) to Ce(super 3+) in ethanolic solution with a time resolution of ca.4-5 s. It is observed that high quality results can be obtained simultaneously, thus giving a detailed insight into the mechanisms of the investigated chemical reaction.

Lithium intercalation in anatase TiO2 results in structural and electronic changes. A two-phase system is completely suited in the atomic structure (EXAFS) and the electronic structure (XANES) regions of the X-ray absorption spectra of anatase TiO2 upon Li intercalation.

The depth distribution of secondary phases in the solar cell absorber material Cu2ZnSnS4 (CZTS) is quantitatively investigated using X-ray Absorption Near Edge Structure (XANES) analysis at the K-edge of sulfur at varying incidence angles. Varying information depths from several nanometers up to the full thickness is achieved. A quantitative profile of the phase distribution is obtained by a self-consistent fit of a multilayer model to the XANES spectra for different angles. Single step coevaporated CZTS thin-films are found to exhibit zinc and copper sulfide secondary phases preferentially at the front or back interfaces of the film. [ABSTRACT FROM AUTHOR]