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348 results on '"He, Xin-Hua"'

20. Research on Exploratory Modeling of Combat Capability of Weapon SoS Based on Synergy

Author

He, Xin Hua, Cheng, Hao, Wu, Wen Bin, Wu, Chang Yu, Qu, Qiang, Kacprzyk, Janusz, Series Editor, Pal, Nikhil R., Advisory Editor, Bello Perez, Rafael, Advisory Editor, Corchado, Emilio S., Advisory Editor, Hagras, Hani, Advisory Editor, Kóczy, László T., Advisory Editor, Kreinovich, Vladik, Advisory Editor, Lin, Chin-Teng, Advisory Editor, Lu, Jie, Advisory Editor, Melin, Patricia, Advisory Editor, Nedjah, Nadia, Advisory Editor, Nguyen, Ngoc Thanh, Advisory Editor, Wang, Jun, Advisory Editor, Patnaik, Srikanta, editor, Wang, John, editor, Yu, Zhengtao, editor, and Dey, Nilanjan, editor

Published
2020
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23. Microstructure and electrical properties of Ta-doped Na0.5Bi4.5Ti4O15 ceramics

Author

CHEN Dan-ling, HUANG Zhi-qiang, and HE Xin-hua

Subjects
na0.5bi4.5ti4o15, bismuth layer structure, ta5+ doping, dielectric property, piezoelectric property, Materials of engineering and construction. Mechanics of materials, TA401-492
Abstract

Bismuth layer structured piezoelectric ceramics, Na0.5Bi4.5TaxTi4-xO15+0.5x (NBT-Ta-x)(x=0-0.20), were fabricated via a solid state sintering process. The effect of Ta5+ doping for B site on the microstructure, electrical conductivity,dielectric and piezoelectric properties of NBT-Ta-x ceramics was investigated by means of XRD, SEM and an automatic temperature control testing system. The results show that Ta doping brings about the decrease in grain size and aspect ratio of grain with a preferable orientation growth along c-axis. Meanwhile, both theoretical density and measured density of the ceramics is increased with increasing tantalum doping content, with the highest relative density of 96.1% at x=0.05, showing that the solid solution limit of tantalum in NBT lattice is in the proximity of x=0.10. The Curie temperature is decreased slightly from 680℃ to 658℃ with the increase of Ta5+ doping content x to 0.20. The electrical resistivity of NBT-Ta-x ceramics is increased as much as about two orders of magnitude by Ta5+ modification and the piezoelectric constant d33 values is increased significantly from 13.8 pC/N to 23 pC/N. The x=0.04-0.05 samples exhibit the optimal electrical performance:Tc=670-672℃,d33=21.8-23 pC/N, kp=7.9%-8.3%.

Published
2020
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32. Overexpression of the MiAGL1gene from mango promoted flowering in transgenic Arabidopsis

Author

Zeng, Xue-mei, He, Xin-hua, Mo, Wen-jing, Yu, Hai-xia, Lu, Ting-ting, Xia, Li-ming, Zhang, Yi-li, Zhu, Jia-wei, and Luo, Cong

Abstract

MADS-boxgenes play a vital role in the vegetative and reproductive growth of plants. In this study, a MiAGL1gene was cloned and identified from mango (Mangifera indicaL.). The DNA sequence of AGAMOUS-LIKE1(MiAGL1) was 8741 bp in length, including a 723 bp open reading frame and encoding 241 amino acids. MiAGL1belongs to the MADS-box family. This gene was expressed not only in vegetative tissues but also in floral organs, and the highest expression level was found in flowers. MiAGL1was expressed in leaves at different floral developmental stages, but the peak appeared at the floral organ differentiation stage. MiAGL1was present in the cell membrane and nucleus. Ectopic expression of MiAGL1in Arabidopsisresulted in significant early flowering under long-day conditions. Overexpression of MiAGL1resulted in abnormal flowering and silique morphology, such as a decrease or absence of petals, smaller petals, and shorter, bent or distorted capsules. The endogenous Arabidopsis thalianaflowering-related genes FT, AP1, and SEPwere significantly upregulated, and AtSVPwas downregulated in the transgenic lines. Therefore, our data showed that the MiAGL1gene may play a crucial role in flowering time regulation and floral organ identity.

Published
2024
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