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High thermoelectric properties are associated with the phonon-glass electron-crystal paradigm. Conventional wisdom suggests that the optimal bandgap of semiconductor to achieve the largest power factor should be between 6 and 10 kbT. To address challenges related to the bipolar effect and temperature limitations, we present findings on Zintl-type TlAgI2, which demonstrates an exceptionally low lattice thermal conductivity of 0.3 W m-1 K-1 at 300 K. The achieved figure of merit (ZT) for TlAgI2, featuring a 1.55 eV bandgap, reaches a value of 2.20 for p-type semiconductor. This remarkable ZT is attributed to the existence of extended antibonding states Ag-I in the valence band. Furthermore, the bonding hierarchy, influencing phonon anharmonicity, and coordination bonds, facilitating electron transfer between the ligand and the central metal ion, significantly contribute to electronic transport. This finding serves as a promising avenue for the development of high ZT materials with wide bandgaps at elevated temperatures.

Lattice thermal conductivity ($\kappa_{\rm L}$) is a crucial characteristic of crystalline solids with significant implications for practical applications. While the higher order of anharmonicity of phonon gas model is commonly used for explaining extraordinary heat transfer behaviors in crystals, the impact of exchange-correlation (XC) functionals in DFT on describing anharmonicity has been largely overlooked. Most XC functionals in solids focus on ground state properties that mainly involve the harmonic approximation, neglecting temperature effects, and their reliability in studying anharmonic properties remains insufficiently explored. In this study, we systematically investigate the room-temperature $\kappa_{\rm L}$ of 16 binary compounds with rocksalt and zincblende structures using 8 XC functionals such as LDA, PBE, PBEsol, optB86b, revTPSS, SCAN, rSCAN, r$^2$SCAN in combination with three perturbation orders, including phonon within harmonic approximation (HA) plus three-phonon scattering (HA+3ph), phonon calculated using self-consistent phonon theory (SCPH) plus three-phonon scattering (SCPH+3ph), and SCPH phonon plus three- and four-phonon scattering (SCPH+3,4ph). Our results show that the XC functional exhibits strong entanglement with perturbation order and the mean relative absolute error (MRAE) of the computed $\kappa_{\rm L}$ is strongly influenced by both the XC functional and perturbation order, leading to error cancellation or amplification. The minimal (maximal) MRAE is achieved with revTPSS (rSCAN) at the HA+3ph level, SCAN (r$^2$SCAN) at the SCPH+3ph level, and PBEsol (rSCAN) at the SCPH+3,4ph level. Among these functionals, PBEsol exhibits the highest accuracy at the highest perturbation order. The SCAN-related functionals demonstrate moderate accuracy but are suffer from numerical instability and high computational costs., Comment: 13 pages, 8 figures

Perovskite oxides have been extensively studied for their wide range of compositions and structures, as well as their valuable properties for various applications. Expanding from single perovskite ABO$_3$ to double perovskite $A_2BB^{\prime}$O$_6$ significantly enhances the ability to tailor specific physical and chemical properties. However, the vast number of potential compositions of $A_2BB^{\prime}$O$_6$ makes it impractical to explore them all experimentally. In this study, we conducted high-throughput calculations to systematically investigate the structures and stabilities of 4,900 $A_2BB^{\prime}$O$_6$ compositions (with $A$ = Ca, Sr, Ba, and La; $B$ and $B^{\prime}$ representing metal elements) through over 42,000 density functional theory (DFT) calculations. Our analysis lead to the discovery of more than 1,500 new synthesizable $A_2BB^{\prime}$O$_6$ compounds, with over 1,100 of them exhibiting double perovskite structures, predominantly in the $P2_1/c$ space group. By leveraging the high-throughput dataset, we developed machine learning models that achieved mean absolute errors of 0.0444 and 0.0330 eV/atom for formation energy and decomposition energy, respectively. Using these models, we identified 803 stable or metastable compositions beyond the chemical space covered in our initial calculations, with 612 of them having DFT-validated decomposition energies below 0.1 eV/atom, resulting in a success rate of 76.2 \%. This study delineates the stability landscape of $A_2BB^{\prime}$O$_6$ compounds and offers new insights for the exploration of these materials.

Tuning the properties of materials using external stimuli is crucial for developing versatile smart materials. A strong coupling among order parameters within a single-phase material constitutes a potent foundation for achieving precise property control. However, cross-coupling is pretty weak in most single materials. Leveraging first principles calculations, we demonstrate the layered mixed anion compound MoBr$_2$O$_2$ exhibits electric-field switchable spontaneous polarization and ultrastrong coupling between polar distortion and electronic structures as well as optical properties. It offers feasible avenues of achieving tunable Rashba spin-splitting, electrochromism, thermochromism, photochromism, and nonlinear optics by applying an external electric field to a single domain sample, heating, as well as intense light illumination. Additionally, it exhibits an exceptionally large photostrictive effect. These findings not only showcase the feasibility of achieving multiple order parameter coupling within a single material, but also pave the way for comprehensive applications based on property control, such as energy harvesting, information processing, and ultrafast control.

The oxygen vacancy formation energy ($\Delta E_{vf}$) governs defect dynamics and is a useful metric to perform materials selection for a variety of applications. However, density functional theory (DFT) calculations of $\Delta E_{vf}$ come at a greater computational cost than the typical bulk calculations available in materials databases due to the involvement of multiple vacancy-containing supercells. As a result, available repositories of direct calculations of $\Delta E_{vf}$ remain relatively scarce, and the development of machine learning models capable of delivering accurate predictions is of interest. In the present, work we address both such points. We first report the results of new high-throughput DFT calculations of oxygen vacancy formation energies of the different unique oxygen sites in over 1000 different oxide materials, which together form the largest dataset of directly computed oxygen vacancy formation energies to date, to our knowledge. We then utilize the resulting dataset of $\sim$2500 $\Delta E_{vf}$ values to train random forest models with different sets of features, examining both novel features introduced in this work and ones previously employed in the literature. We demonstrate the benefits of including features that contain information specific to the vacancy site and account for both cation identity and oxidation state, and achieve a mean absolute error upon prediction of $\sim$0.3 eV/O, which is comparable to the accuracy observed upon comparison of DFT computations of oxygen vacancy formation energy and experimental results. Finally, we demonstrate the predictive power of the developed models in the search for new compounds for solar-thermochemical water-splitting applications, finding over 250 new AA$^{\prime}$BB$^{\prime}$O$_6$ double perovskite candidates.

We propose a first-principles model of minimum lattice thermal conductivity ($\kappa_{\rm L}^{\rm min}$) based on a unified theoretical treatment of thermal transport in crystals and glasses. We apply this model to thousands of inorganic compounds and discover a universal behavior of $\kappa_{\rm L}^{\rm min}$ in crystals in the high-temperature limit: the isotropically averaged $\kappa_{\rm L}^{\rm min}$ is independent of structural complexity and bounded within a range from $\sim$0.1 to $\sim$2.6 W/[m$\cdot$K], in striking contrast to the conventional phonon gas model which predicts no lower bound. We unveil the underlying physics by showing that for a given parent compound $\kappa_{\rm L}^{\rm min}$ is bounded from below by a value that is approximately insensitive to disorder, but the relative importance of different heat transport channels (phonon gas versus diffuson) depends strongly on the degree of disorder. Moreover, we propose that the diffuson-dominated $\kappa_{\rm L}^{\rm min}$ in complex and disordered compounds might be effectively approximated by the phonon gas model for an ordered compound by averaging out disorder and applying phonon unfolding. With these insights, we further bridge the knowledge gap between our model and the well-known Cahill-Watson-Pohl (CWP) model, rationalizing the successes and limitations of the CWP model in the absence of heat transfer mediated by diffusons. Finally, we construct graph network and random forest machine learning models to extend our predictions to all compounds within the Inorganic Crystal Structure Database (ICSD), which were validated against thermoelectric materials possessing experimentally measured ultralow $\kappa_{\rm L}$. Our work offers a unified understanding of $\kappa_{\rm L}^{\rm min}$, which can guide the rational engineering of materials to achieve $\kappa_{\rm L}^{\rm min}$.

Semiconductors with very low lattice thermal conductivities are highly desired for applications relevant to thermal energy conversion and management, such as thermoelectrics and thermal barrier coatings. Although the crystal structure and chemical bonding are known to play vital roles in shaping heat transfer behavior, material design approaches of lowering lattice thermal conductivity using chemical bonding principles are uncommon. In this work, we present an effective strategy of weakening interatomic interactions and therefore suppressing lattice thermal conductivity based on chemical bonding principles and develop a high-efficiency approach of discovering low $\kappa_{\rm L}$ materials by screening the local coordination environments of crystalline compounds. The followed first-principles calculations uncover 30 hitherto unexplored compounds with (ultra)low lattice thermal conductivities from thirteen prototype crystal structures contained in the inorganic crystal structure database. Furthermore, we demonstrate an approach of rationally designing high-performance thermoelectrics by additionally incorporating cations with stereochemically active lone-pair electrons. Our results not only provide fundamental insights into the physical origin of the low lattice thermal conductivity in a large family of copper-based compounds but also offer an efficient approach to discovery and design materials with targeted thermal transport properties., Comment: 14 pages, 9 figures

The development of efficient thermal energy management devices such as thermoelectrics, barrier coatings, and thermal data-storage disks often relies on compounds that possess very low lattice thermal conductivity ($\kappa_l$). Here, we present the computational prediction of a large family of 628 thermodynamically stable quaternary chalcogenides, AMM'Q$_3$ (A = alkali/alkaline earth/post-transition metals; M/M' = transition metals, lanthanides; Q = chalcogens) using high-throughput density functional theory (DFT) calculations. We validate the presence of low-$\kappa_l$ in this family of materials by calculating $\kappa_l$ of several predicted stable compounds using the Peierls-Boltzmann transport equation within a first-principles DFT framework. Our analysis reveals that the low-$\kappa_l$ in the AMM'Q$_3$ compounds originates from the presence of either a strong lattice anharmonicity that enhances the phonon scatterings or rattlers cations that lead to multiple scattering channels in their crystal structures. Our predictions suggest new experimental research opportunities in the synthesis and characterization of these stable, low-$\kappa_l$ compounds.

Despite similar chemical compositions, LiOsO$_3$ and NaOsO$_3$ exhibit remarkably distinct structural, electronic, magnetic, and spectroscopic properties. At low temperature, LiOsO$_3$ is a polar bad metal with a rhombohedral $R3c$ structure without the presence of long-range magnetic order, whereas NaOsO$_3$ is a $G$-type antiferromagnetic insulator with an orthorhombic $Pnma$ structure. By means of comparative first-principles DFT+$U$ calculations with the inclusion of the spin-orbit coupling, we ($i$) identify the origin of the different structural ($R3c$ vs. $Pnma$) properties using a symmetry-adapted soft mode analysis, ($ii$) provide evidence that all considered exchange-correlation functionals (LDA, PBE, PBEsol, SCAN, and HSE06) and the spin disordered polymorphous descriptions are unsatisfactory to accurately describe the electronic and magnetic properties of both systems simultaneously, and ($iii$) clarify that the distinct electronic (metallic vs. insulating) properties originates mainly from a cooperative steric and magnetic effect. Finally, we find that although at ambient pressure LiOsO$_3$ with a $Pnma$ symmetry and NaOsO$_3$ with a $R\bar{3}c$ symmetry are energetically unfavorable, they do not show soft phonons and therefore are dynamically stable. A pressure-induced structural phase transition from $R3c$ to $Pnma$ for LiOsO$_3$ is predicted, whereas for NaOsO$_3$ no symmetry change is discerned in the considered pressure range., Comment: 9 pages, 9 figures

Materials with coupled or competing order parameters display highly tunable ground states, where subtle perturbations reveal distinct electronic and magnetic phases. These phases generally are underpinned by complex crystal structures, but the role of structural complexity in these phases often is unclear. We use group theoretic methods and first-principles calculations to analyze a set of coupled structural distortions that underlie the polar charge- and orbitally- ordered antiferromagnetic ground state of $A$-site ordered SmBaMn$_2$O$_6$. We show that these distortions play a key role in establishing the ground state and stabilizing a network of domain wall vortices. Furthermore, we show that the crystal structure provides a knob to control competing electronic and magnetic phases at structural domain walls and in epitaxially strained thin films. These results provide new understanding of the complex physics realized across multiple length scales in SmBaMn$_2$O$_6$ and demonstrate a framework for systematic exploration of correlated and structurally complex materials.

Improving the figure of merit $zT$ of thermoelectric materials requires simultaneously a high power factor and low thermal conductivity. An effective approach for increasing the power factor is to align the band extremum and achieve high band degeneracy ($\geq$ 12) near the Fermi level as realized in PbTe [\textcolor{blue}{Pei et. al. \textit{Nature} 473, 66 (2010)}], which usually relies on band structure engineering, e.g., chemical doping and strain. However, very few materials could achieve such a high band degeneracy without heavy doping or suffering impractical strain. By employing state-of-the-art first-principles methods with direct computation of phonon and carrier lifetime, we demonstrate that two new full-Heusler compounds Li$_2$TlBi and Li$_2$InBi, possessing a PbTe-like electronic structure, show exceptionally high power factors ($\sim$ 20 mWm$^{-1}$K$^{-2}$ at 300 K) and low lattice thermal conductivities (2.36 and 1.55 Wm$^{-1}$K$^{-1}$) at room temperature. The Tl$^{+}$Bi$^{3-}$ (In$^{+}$Bi$^{3-}$) sublattice forms a rock-salt structure, and the additional two valence electrons from Li atoms essentially make these compounds isovalent with Pb$^{2+}$Te$^{2-}$. The larger rock-salt sublattice of TlBi (InBi) shifts the valence band maximum from L point to the middle of the $\Sigma$ line, increasing the band degeneracy from fourfold to twelvefold. On the other hand, resonance bond in the PbTe-like sublattice and soft Tl-Bi (In-Bi) bonding interaction is responsible for intrinsic low lattice thermal conductivities. Our results present a novel strategy of designing high-performance thermoelectric materials.

A high power factor and low lattice thermal conductivity are two essential ingredients of highly efficient thermoelectric materials. Although monolayers of transition metal dichalcogenides possess high power factors, high lattice thermal conductivities significantly impede their practical applications. Our first-principles calculations show that these two ingredients are well fulfilled in the recently synthesized Pd$_{2}$Se$_{3}$ monolayer, whose crystal structure is composed of [Se$_{2}$]$^{2-}$ dimers, Se$^{2-}$ anions, and Pd$^{2+}$ cations coordinated in a square planar manner. Our detailed analysis of third-order interatomic force constants reveals that the anharmonicity and soft phonon modes associated with [Se$_2$]$^{2-}$ dimers lead to ultra-low lattice thermal conductivities in Pd$_{2}$Se$_{3}$ monolayers (1.5 and 2.9 Wm$^{-1}$K$^{-1}$ along the $a$- and $b$-axes at 300\,K respectively), which are comparable to those of high-performance bulk thermoelectric materials such as PbTe. Moreover, the "pudding-mold" type band structure, caused by Pd$^{2+}$ ($d^{8}$) cations coordinated in a square planar crystal field, leads to high power factors in Pd$_{2}$Se$_{3}$ monolayers. Consequently, both electron and hole doped thermoelectric materials with a considerably high $zT$ can be achieved at moderate carrier concentrations, suggesting that Pd$_{2}$Se$_{3}$ is a promising two-dimensional thermoelectric material., Comment: 6 pages, 5 figures, 1 tables

Intermetallic compounds with sizable band gaps are attractive for their unusual properties but rare. Here, we present a new family of stable semiconducting quaternary Heusler compounds, designed and discovered by means of high-throughput \textit{ab initio} calculations based on the 18-electron rule. The 99 new semiconductors reported here adopt the ordered quaternary Heusler structure with the prototype of LiMgSnPd (F$\bar{\mathbf{4}}$3m, No.\,216) and contain 18 valence electrons per formula unit. They are realized by filling the void in the half Heusler structure with a small and electropositive atom, i.e., lithium. These new stable quaternary Heusler semiconductors possess a range of band gaps from 0.3 to 2.5\,eV, and exhibit some unusual properties different from conventional semiconductors, such as strong optical absorption, giant dielectric screening, and high Seebeck coefficient, which suggest these semiconductors have potential applications as photovoltaic and thermoelectric materials. While this study opens up avenues for further exploration of this novel class of semiconducting quaternary Heuslers, the design strategy used herein is broadly applicable across a potentially wide array of chemistries to discover new stable materials., Comment: 8 pages, 6 figures

First-principles calculations of the electronic structure, magnetism and structural stability of inverse-Heusler compounds with the chemical formula \textit{X$_2$YZ} are presented and discussed with a goal of identifying compounds of interest for spintronics. Compounds for which the number of electrons per atom for \textit{Y} exceed that for \textit{X} and for which \textit{X} is one of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, or Cu; \textit{Y} is one of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, or Zn; and \textit{Z} is one of Al, Ga, In, Si, Ge, Sn, P, As or Sb were considered. The formation energy per atom of each compound was calculated. By comparing our calculated formation energies to those calculated for phases in the Inorganic Crystal Structure Database (ICSD) of observed phases, we estimate that inverse-Heuslers with formation energies within 0.052 eV/atom of the calculated convex hull are reasonably likely to be synthesizable in equilibrium. The observed trends in the formation energy and relative structural stability as the \textit{X}, \textit{Y} and \textit{Z} elements vary are described. In addition to the Slater-Pauling gap after 12 states per formula unit in one of the spin channels, inverse-Heusler phases often have gaps after 9 states or 14 states. We describe the origin and occurrence of these gaps. We identify 14 inverse-Heusler semiconductors, 51 half-metals and 50 near half-metals with negative formation energy. In addition, our calculations predict 4 half-metals and 6 near half-metals to lie close to the respective convex hull of stable phases, and thus may be experimentally realized under suitable synthesis conditions, resulting in potential candidates for future spintronics applications.

In this paper we assess the predictive power of the self-consistent hybrid functional scPBE0 in calculating the band gap of oxide semiconductors. The computational procedure is based on the self-consistent evaluation of the mixing parameter $\alpha$ by means of an iterative calculation of the static dielectric constant using the perturbation expansion after discretization (PEAD) method and making use of the relation $\alpha = 1/\epsilon_{\infty}$. Our materials dataset is formed by 30 compounds covering a wide range of band gaps and dielectric properties, and includes materials with a wide spectrum of application as thermoelectrics, photocatalysis, photovoltaics, transparent conducting oxides, and refractory materials. Our results show that the scPBE0 functional provides better band gaps than the non self-consistent hybrids PBE0 and HSE06, but scPBE0 does not show significant improvement on the description of the static dielectric constants. Overall, the scPBE0 data exhibit a mean absolute percentage error of 14 \% (band gaps) and 10 \% ($\epsilon_\infty$). For materials with weak dielectric screening and large excitonic biding energies scPBE0, unlike PBE0 and HSE06, overestimates the band gaps, but the value of the gap become very close to the experimental value when excitonic effects are included (e.g. for SiO$_2$). However, special caution must be given to the compounds with small band gaps due to the tendency of scPBE0 to overestimate the dielectric constant in proximity of the metallic limit., Comment: 11 pages, 7 figures

Semiconducting half- and, to a lesser extent, full-Heusler compounds are promising thermoelectric materials due to their compelling electronic properties with large power factors. However, intrinsically high thermal conductivity resulting in a limited thermoelectric efficiency has so far impeded their widespread use in practical applications. Here, we report the computational discovery of a class of hitherto unknown stable semiconducting full-Heusler compounds with ten valence electrons ($X_2YZ$, $X$=Ca, Sr, and Ba; $Y$= Au and Hg; $Z$=Sn, Pb, As, Sb, and Bi) through high-throughput $ab-initio$ screening. These new compounds exhibit ultralow lattice thermal conductivity $\kappa_{\text{L}}$ close to the theoretical minimum due to strong anharmonic rattling of the heavy noble metals, while preserving high power factors, thus resulting in excellent phonon-glass electron-crystal materials., Comment: 6 pages, 5 figures

The structure and ground state electronic structure of the recently synthesized SrPdO$_3$ perovskite [A. Galal {\em et al.}, J. Power Sources, {\bf 195}, 3806 (2010)] have been studied by means of screened hybrid functional and the GW approximation with the inclusion of electron-hole interaction within the test-charge/test-charge scheme. By conducting a structural search based on lattice dynamics and group theoretical method we identify the orthorhombic phase with $P_{nma}$ space group as the most stable crystal structure. The phase transition from the ideal cubic perovskite structure to the $P_{nma}$ one is explained in terms of the simultaneous stabilization of the antiferrodistortive phonon modes $R_4^+$ and $M_3^+$. Our results indicate that SrPdO$_3$ exhibits an insulating ground state, substantiated by a GW$_0$ gap of about 1.1 eV. Spin polarized calculations suggests that SrPdO$_3$ adopts a low spin state ($t_{2g}^{\uparrow\downarrow\uparrow\downarrow\uparrow\downarrow}e_g^0$), and is expected to exhibit spin excitations and spin state crossovers at finite temperature, analogous to the case of 3$d$ isoelectronic LaCoO$_3$. This would provide a new playground for the study of spin state transitions in 4$d$ oxides and new opportunity to design multifunctional materials based on 4$d$ $P_{nma}$ building block.