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Your search keyword '"Haumesser, P.-H."' showing total 26 results
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26 results on '"Haumesser, P.-H."'

7. Novel Patterning Techniques for Copper Electroplated Metallization on Silicon Heterojunction Solar Cells

Author

Lachowicz, A., Andreatta, G., Blondiaux, N., Faes, A., Diaz Leon, J.J., Christmann, G., Allebé, C., Fontaine, C., Haumesser, P.-H., Jourdan, J., Muñoz, D., Godard, M., Darnon, M., Despeisse, M., Nicolay, S., and Ballif, C.

Subjects
Low Temperature Route for Si Cells, Silicon Materials and Cells
Abstract

37th European Photovoltaic Solar Energy Conference and Exhibition; 228-232, For the current PV production about 2000 tons of silver are consumed per year. This is already 10% of the entire world annual silver supply. The PV production is expected to grow significantly in the next decades in order to enable the energy transition to 100% renewables. Annual production volumes in the terawatt range are predicted already for 2030 and this may lead to higher silver price and put more pressure on the industry to replace silver by copper. With the currently available processes the cost advantage of copper plating over screen printing is relatively small and the implementation of plating in production is slowed down by the high up-front investment for equipment. The highest cost share of the process sequence has the patterning and research activities focus on new, i.e. more cost competitive patterning techniques. Within the Ameliz project several approaches are investigated: firstly, patterning by printing a metal seed grid with a dielectric layer as plating mask and secondly masking by a monolayer of self-assembling molecules. These molecules consist of a phosphonic acid group and a hydrocarbon chain. They are bonded to the ITO surface and form a monolayer of well-ordered, densely packed hydrophobic chains, which protects the ITO surface against plating solutions. Furthermore, methods for selective formation of a copper seed layer by electrografting and for improved adhesion by ITO reduction are being investigated.

Published
2020
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8. Electroless deposition of Co-based barriers: selectivity, corrosion and growth properties

Author

Decorps, T., Haumesser, P. -H, Segolene OLIVIER, Roule, A., Avale, X., Joulaud, M., Pollet, O., Chainet, E., Passemard, G., STMicroelectronics [Crolles] (ST-CROLLES), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Semitool, Inc., and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[CHIM.ANAL]Chemical Sciences/Analytical chemistry, [CHIM]Chemical Sciences, [CHIM.MATE]Chemical Sciences/Material chemistry
Abstract

International audience; Elcctroless metallic caps are convincing alternatives to standard SiC(N) barriers for the 45 nm technology node and beyond to improve electromigration resistance and limit the dielectric constant of the structures. In this work, particular emphasis is put on possible selectivity issues, corrosion of the copper lines and nucleation/growth properties for two processes (Pd-activated Co\VP and Pd-free CoWB) deprniited in an industrial 300 mm equipment Co\VP process exhibits promising results for 12 nm nominal thickness. For both processes, the control of the preclean step seems to be fundamental to limit copper corrosion. Under optimal conditions, line resistance increase is limited to less than 3 %.

Published
2006

12. Development and characterisation of a 3D technology including TSV and Cu pillars for high frequency applications

Author

Charbonnier, J., primary, Hida, R., additional, Henry, D., additional, Cheramy, S., additional, Chausse, P., additional, Neyret, M., additional, Hajji, O., additional, Garnier, G., additional, Brunet-Manquat, C., additional, Haumesser, P. H., additional, Vandroux, L., additional, Anciant, R., additional, Sillon, N., additional, Farcy, A., additional, Rousseau, M., additional, Cuzzocrea, J., additional, Druais, G., additional, and Saugier, E., additional

Published
2010
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14. 300 mm Multi Level Air Gap Integration for Edge Interconnect Technologies and Specific High Performance Applications

Author

Gras, R., primary, Gaillard, F., additional, Bouchu, D., additional, Farcy, A., additional, Petitprez, E., additional, Icard, B., additional, Le-Denmat, J. C., additional, Pain, L., additional, Bustos, J., additional, Haumesser, P. H., additional, Brun, P., additional, Imbert, G., additional, Clement, L., additional, Borowiak, C., additional, Rivoire, M., additional, Euvrard, C., additional, Arnal, V., additional, Olivier, S., additional, Moreau, S., additional, Mellier, M., additional, Chevolleau, T., additional, Passemard, G., additional, and Torres, J., additional

Published
2008
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21. Enabling technologies for 3D chip stacking.

Author

Leduc, P., Di Cioccio, L., Charlet, B., Rousseau, M., Assous, M., Bouchu, D., Roule, A., Zussy, M., Gueguen, P., Roman, A., Rozeau, O., Heitzmann, M., Nieto, J.-P., Vandroux, L., Haumesser, P.-H., Quenouillere, R., Toffoli, A., Sixt, P., Maitrejean, S., and Clavelier, L.

Published
2008
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25. Electroless deposition of NiMoPB: Electrical performances and material properties

Author

Decorps, T., Segolene OLIVIER, Calvo-Muñoz, M. -L, Haumesser, P. -H, Fillot, F., Mellies, R., Hahn, M., Wirth, A., Mayer, D., Chainet, E., Passemard, G., STMicroelectronics [Crolles] (ST-CROLLES), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Freescale Semiconductor (Freescale), Freescale semiconductor, BASF, and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
[CHIM.ANAL]Chemical Sciences/Analytical chemistry, [CHIM.MATE]Chemical Sciences/Material chemistry
Abstract

International audience; Electroless deposited Co-based caps are convicing alternatives to standard SiC(N) barriers for the 45 nm node and beyond to improve electromigration resistance and limit the dielectric constant of the structures. In this work, growth kinetics, process selectivity, microstructure and composition of an alternative self-initiated NiMoPB cap are reported for 300 mm fabrication. This process is very selective, and does not modify the electrical performances of the structures. The film presents very promising barrier properties against copper diffusion, due to a high quantity of phosphorus and refractory metal in the fihn.

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