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Glass, a ubiquitous state of matter like a frozen liquid, is a seminal issue across fundamental and applied sciences and has long been investigated in the framework of classical mechanics. A challenge in glass physics is the exploration of the quantum-mechanical behaviour of glass. Experimentally, however, the real quantum manifestation of glass and the relationship between classical and quantum glass are totally unknown and remain to be observed in real systems. Here, we report the direct observation of classical-to-quantum evolution in the frustration-induced charge glass state exhibited by interacting electrons in organic materials. We employ Raman spectroscopy to capture a snapshot of the charge density distribution of each molecule in a series of charge glasses formed on triangular lattices with different geometrical frustrations. In less frustrated glass, the charge density profile exhibits a particle-like two-valued distribution; however, it becomes continuous and narrowed with increasing frustration, demonstrating the classical-to-quantum crossover. Moreover, the charge density distribution shows contrasting temperature evolution in classical and quantum glasses, enabling us to delineate energy landscapes with distinct features. The present result is the first to experimentally identify the quantum charge glass and show how it emerges from classical glass., Comment: 33 pages including 13 figures

Liquids crystallize as they cool; however, when crystallization is avoided in some way, they supercool, maintaining their liquidity, and freezing into glass at low temperatures, as ubiquitously observed. These metastable states crystallize over time through the classical dynamics of nucleation and growth. However, it was recently found that Coulomb interacting electrons on charge-frustrated triangular lattices exhibit supercooled liquid and glass with quantum nature and they crystallize, raising fundamental issues : what features are universal to crystallization at large and specific to that of quantum systems? Here, we report our experimental challenges that address this issue through the spatiotemporal observation of electronic crystallization in an organic material. With Raman microspectroscopy, we are the first to successfully perform real-space and real-time imaging of electronic crystallization. The results directly capture strongly temperature-dependent crystallization profiles indicating that nucleation and growth proceed at distinctive temperature-dependent rates, which is common to conventional crystallization. Remarkably, however, the growth rate is many orders of magnitude larger than that in the conventional case, which is attributable to the quantum effect. The temperature characteristics of nucleation and growth are universal, whereas unusually fast growth kinetics features quantum crystallization where a quantum-to-classical catastrophe occurs in interacting electrons., Comment: 31 pages, 11 figures

We develop an analytical method for the processing of electron spin resonance (ESR) spectra. The goal is to obtain the distributions of trapped carriers over both their degree of localization and their binding energy in semiconductor crystals or films composed of regularly aligned organic molecules [Phys. Rev. Lett. v. 104, 056602 (2010)]. Our method has two steps. We first carry out a fine analysis of the shape of the ESR spectra due to the trapped carriers; this reveals the distribution of the trap density of the states over the degree of localization. This analysis is based on the reasonable assumption that the linewidth of the trapped carriers is predetermined by their degree of localization because of the hyperfine mechanism. We then transform the distribution over the degree of localization into a distribution over the binding energies. The transformation uses the relationships between the binding energies and the localization parameters of the trapped carriers. The particular relation for the system under study is obtained by the Holstein model for trapped polarons using a diagrammatic Monte Carlo analysis. We illustrate the application of the method to pentacene organic thin-film transistors., Comment: 14 pages, 11 figures

We developed a novel method for obtaining the distribution of trapped carriers over their degree of localization in organic transistors, based on the fine analysis of electron spin resonance spectra at low enough temperatures where all carriers are localized. To apply the method to pentacene thin-film transistors, we proved through continuous wave saturation experiments that all carriers are localized at below 50 K. We analyzed the spectra at 20 K and found that the major groups of traps comprise localized states having wave functions spanning around 1.5 and 5 molecules and a continuous distribution of states with spatial extent in the range between 6 and 20 molecules., Comment: pdf file, 12 pages, 4 figures

Charge transport through metal-Mott-insulator interfaces is studied and compared with that through metal-band-insulator interfaces. For band insulators, rectification has been known to occur owing to a Schottky barrier, which is produced by the work-function difference. For Mott insulators, however, qualitatively different current-voltage characteristics are obtained. Theoretically, we use the one-dimensional Hubbard model for a Mott insulator and attach to it the tight-binding model for metallic electrodes. A Schottky barrier is introduced by a solution to the Poisson equation with a simplified density-potential relation. The current density is calculated by solving the time-dependent Schr\"odinger equation. We mainly use the time-dependent Hartree-Fock approximation, and also use exact many-electron wave functions on small systems for comparison. Rectification is found to be strongly suppressed even for large work-function differences. We show its close relationship with the fact that field-effect injections into one-dimensional Mott insulators are ambipolar. Experimentally, we fabricated asymmetric contacts on top of single crystals of quasi-one-dimensional organic Mott and band insulators. Rectification is strongly suppressed at an interface between metallic magnesium and Mott-insulating (BEDT-TTF)(F$_2$TCNQ) [BEDT-TTF=bis(ethylenedithio)tetrathiafulvalene, F$_2$TCNQ=2,5-difluorotetracyanoquinodimethane]., Comment: 6 pages, 5 figures, accepted for publication in Phys. Rev. B