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Passivation is one of the most promising concepts to heal defects created at the surface and grain boundaries of polycrystalline perovskite thin films, which significantly deteriorate the photovoltaic performance and stability of corresponding devices. Here, 1,10-phenanthroline, known as a bidentate chelating ligand, is implemented between the methylammonium lead iodide (MAPbI 3 ) film and the hole-transport layer for both passivating the lead-based surface defects (undercoordinated lead ions) and converting the excess/unreacted lead iodide (PbI 2 ) buried at interfaces, which is problematic for the long-term stability, into "neutralized" and beneficial species (PbI 2 (1,10-phen) x , x = 1, 2) for efficient hole transfer at the modified interface. The defect healing ability of 1,10-phenanthroline is verified with a set of complementary techniques including photoluminescence (steady-state and time-resolved), space-charge-limited current (SCLC) measurements, light intensity dependent JV measurements, and Fourier-transform photocurrent spectroscopy (FTPS). In addition to these analytical methods, we employ advanced X-ray scattering techniques, nano-Fourier transform infrared (nano-FTIR) spectroscopy, and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) to further analyze the structure and chemical composition at the perovskite surface after treatment at nanoscale spatial resolution. On the basis of our experimental results, we conclude that 1,10-phenanthroline treatment induces the formation of different morphologies with distinct chemical compositions on the surface of the perovskite film such that surface defects are effectively passivated, and excess/unreacted PbI 2 is converted into beneficial complex species at the modified interface. As a result, an improved power conversion efficiency (20.16%) and significantly more stable unencapsulated perovskite solar cells are obtained with the 1,10-phenanthroline treatment compared to the MAPbI 3 reference device (18.03%).

Trions, charged excitons that are reminiscent of hydrogen and positronium ions, have been intensively studied for energy harvesting, light-emitting diodes, lasing, and quantum computing applications because of their inherent connection with electron spin and dark excitons. However, these quasi-particles are typically present as a minority species at room temperature making it difficult for quantitative experimental measurements. Here, we show that by chemically engineering the well depth of sp 3 quantum defects through a series of alkyl functional groups covalently attached to semiconducting carbon nanotube hosts, trions can be efficiently generated and localized at the trapping chemical defects. The exciton-electron binding energy of the trapped trion approaches 119 meV, which more than doubles that of "free" trions in the same host material (54 meV) and other nanoscale systems (2-45 meV). Magnetoluminescence spectroscopy suggests the absence of dark states in the energetic vicinity of trapped trions. Unexpectedly, the trapped trions are approximately 7.3-fold brighter than the brightest previously reported and 16 times as bright as native nanotube excitons, with a photoluminescence lifetime that is more than 100 times larger than that of free trions. These intriguing observations are understood by an efficient conversion of dark excitons to bright trions at the defect sites. This work makes trions synthetically accessible and uncovers the rich photophysics of these tricarrier quasi-particles, which may find broad implications in bioimaging, chemical sensing, energy harvesting, and light emitting in the short-wave infrared., Competing Interests: The authors declare no competing financial interest., (Copyright © 2019 American Chemical Society.)

Semiconductor quantum rings are topological structures that support fascinating phenomena such as the Aharonov-Bohm effect and persistent current, which are of high relevance in the research of quantum information devices. The annular shape of quantum rings distinguishes them from other low-dimensional materials, and enables topologically induced properties such as geometry-dependent spin manipulation and emission. While optical transition dipole moments (TDMs) in zero to two-dimensional optical emitters have been well investigated, those in quantum rings remain obscure despite their utmost relevance to the quantum photonic applications of quantum rings. Here, we study the dimensionality and orientation of TDMs in CdSe quantum rings. In contrast to those in other two-dimensional optical emitters, we find that TDMs in CdSe quantum rings show a peculiar in-plane linear distribution. Our theoretical modeling reveals that this uniaxial TDM originates from broken rotational symmetry in the quantum ring geometries.

Light-emitting sources and devices permeate every aspect of our lives and are used in lighting, communications, transportation, computing, and medicine. Advances in multifunctional and "smart lighting" would require revolutionary concepts in the control of emission spectra and directionality. Such control might be possible with new schemes and regimes of light-matter interaction paired with developments in light-emitting materials. Here we show that all-dielectric metasurfaces made from III-V semiconductors with embedded emitters have the potential to provide revolutionary lighting concepts and devices, with new functionality that goes far beyond what is available in existing technologies. Specifically, we use Mie-resonant metasurfaces made from semiconductor heterostructures containing epitaxial quantum dots. By controlling the symmetry of the resonant modes, their overlap with the emission spectra, and other structural parameters, we can enhance the brightness by 2 orders of magnitude, as well as reduce its far-field divergence significantly.

Organic color centers are an emergent class of quantum emitters that hold vast potential for applications in bioimaging, chemical sensing, and quantum information processing. Here, we show that these synthetic color centers follow interesting structure-property relationships through comparative spectral studies of 14 purified single-walled carbon nanotube chiralities and 30 different functional groups that vary in electron-withdrawing capability and bonding configurations. The defect emission is tunable by as much as 400 meV in the near-infrared as a function of host structure and the chemical nature of the color centers. However, the emission energy is nearly free from chiral angle and family patterns of the nanotube host (although this strongly depends on the nanotube diameter), suggesting that a trapped exciton at the organic color centers to some degree electronically decouples from the one-dimensional semiconductor host. Our findings provide important insights for designing and controlling this new family of synthetic color centers., Competing Interests: DECLARATION OF INTERESTS The authors declare no competing interests.

Photoluminescent sp 3 defect states introduced to single wall carbon nanotubes (SWCNTs) through low-level covalent functionalization create new photophysical behaviors and functionality as a result of defect sites acting as exciton traps. Evaluation of relaxation dynamics in varying dielectric environments can aid in advancing a more complete description of defect-state relaxation pathways and electronic structure. Here, we exploit helical wrapping polymers as a route to suspending (6,5) SWCNTs covalently functionalized with 4-methoxybenzene in solvent systems including H 2 O, D 2 O, methanol, dimethylformamide, tetrahydrofuran, and toluene, spanning a range of dielectric constants from 80 to 3. Defect-state photoluminescence decays were measured as a function of emission wavelength and solvent environment. Emission decays are biexponential, with short lifetime components on the order of 65 ps and long components ranging from around 100 to 350 ps. Both short and long decay components increase as emission wavelength increases, while only the long lifetime component shows a solvent dependence. We demonstrate that the wavelength dependence is a consequence of thermal detrapping of defect-state excitons to produce mobile E 11 excitons, providing an important mechanism for loss of defect-state population. Deeper trap states (i.e., those emitting at longer wavelengths) result in a decreased rate for thermal loss. The solvent-independent behavior of the short lifetime component is consistent with its assignment as the characteristic time for redistribution of exciton population between bright and dark defect states. The solvent dependence of the long lifetime component is shown to be consistent with relaxation via an electronic to vibrational energy transfer mechanism, in which energy is resonantly lost to solvent vibrations in a complementary mechanism to multiphonon decay processes.

Covalent functionalization of single-walled carbon nanotubes (SWCNTs) is a promising route to enhance the quantum yield of exciton emission and can lead to single-photon emission at room temperature. However, the spectral linewidth of the defect-related E11* emission remains rather broad. Here, we systematically investigate the low-temperature exciton emission of individual SWCNTs that have been dispersed with sodium-deoxycholate (DOC) and polyfluorene (PFO-BPy), are grown by laser vaporization (LV) or by CoMoCat techniques and are functionalized with oxygen as well as 3,5-dichlorobenzene groups. The E11 excitons in oxygen-functionalized SWCNTs remain rather broad with up to 10 meV linewidth while exciton emission from 3,5-dichlorobenzene functionalized SWCNTs is found to be about one order of magnitude narrower. In all cases, wrapping with PFO-BPy provides significantly better protection against pump induced dephasing compared to DOC. To further study the influence of exciton localization on pump-induced dephasing, we have embedded the functionalized SWCNTs into metallo-dielectric antenna cavities to maximize light collection. We show that 0D excitons attributed to the E11* emission of 3,5-dichlorobenzene quantum defects of LV-grown SWCNTs can display near resolution-limited linewidths down to 35 μeV. Interestingly, these 0D excitons give rise to a 3-fold suppressed pump-induced exciton dephasing compared to the E11 excitons in the same SWCNT. These findings provide a foundation to build a unified description of the emergence of novel optical behavior from the interplay of covalently introduced defects, dispersants, and exciton confinement in SWCNTs and might further lead to the realization of indistinguishable photons from carbon nanotubes.

The intrinsic near-infrared photoluminescence observed in long single-walled carbon nanotubes is known to be quenched in ultrashort nanotubes due to their tiny size as compared to the exciton diffusion length in these materials (>100 nm). Here, we show that intense photoluminescence can be created in ultrashort nanotubes (∼40 nm length) upon incorporation of exciton-trapping sp 3 defect sites. Using super-resolution photoluminescence imaging at <25 nm resolution, we directly show the preferential localization of excitons at the nanotube ends, which separate by less than 40 nm and behave as independent emitters. This unexpected observation opens the possibility to synthesize fluorescent ultrashort nanotubes-a goal that has been long thought impossible-for bioimaging applications, where bright near-infrared photoluminescence and small size are highly desirable, and for quantum information science, where high quality and well-controlled near-infrared single photon emitters are needed.

Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of ∼50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a ∼30% decrease of emission lifetime is observed. The statistics of photons emitted from the cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to ∼1.7 × 10 7 Hz.

We demonstrate the remote excitation and detection of surface-enhanced Raman scattering (SERS) from graphene using a silver nanowire as a plasmonic waveguide. By investigating a nanowire touching a graphene sheet at only one terminal, we first show the remote excitation of SERS from graphene by propagating surface plasmon polaritons (SPPs) launched by a focused laser over distances on the order of 10 μm. Remote detection of SERS is then demonstrated for the same nanowire by detecting light emission at the distal end of the nanowire that was launched by graphene Raman scattering and carried to the end of the nanowire by SPPs. We then show that the transfer of the excitation and Raman scattered light along the nanowire can also be visualized through spectrally selective back focal plane imaging. Back focal plane images detected upon focused laser excitation at one of the nanowire's tips reveal propagating surface plasmon polaritons at the laser energy and at the energies of the most prominent Raman bands of graphene. With this approach the identification of remote excitation and detection of SERS for nanowires completely covering the Raman scatterer is achieved, which is typically not possible by direct imaging.

Micro- and nanocrystalline methylammonium lead iodide (MAPI)-based thin-film solar cells today reach power conversion efficiencies of over 20%. We investigate the impact of grain boundaries on charge carrier transport in large crystal MAPI thin films using time-resolved photoluminescence (PL) microscopy and numerical model calculations. Crystal sizes in the range of several tens of micrometers allow for the spatially and time resolved study of boundary effects. Whereas long-ranged diffusive charge carrier transport is observed within single crystals, no detectable diffusive transport occurs across grain boundaries. The observed PL transients are found to crucially depend on the microscopic geometry of the crystal and the point of observation. In particular, spatially restricted diffusion of charge carriers leads to slower PL decay near crystal edges as compared to the crystal center. In contrast to many reports in the literature, our experimental results show no quenching or additional loss channels due to grain boundaries for the studied material, which thus do not negatively affect the performance of the derived thin-film devices.

Aiming to unravel the relationship between chemical configuration and electronic structure of sp 3 defects of aryl-functionalized (6,5) single-walled carbon nanotubes (SWCNTs), we perform low-temperature single nanotube photoluminescence (PL) spectroscopy studies and correlate our observations with quantum chemistry simulations. We observe sharp emission peaks from individual defect sites that are spread over an extremely broad, 1000-1350 nm, spectral range. Our simulations allow us to attribute this spectral diversity to the occurrence of six chemically and energetically distinct defect states resulting from topological variation in the chemical binding configuration of the monovalent aryl groups. Both PL emission efficiency and spectral line width of the defect states are strongly influenced by the local dielectric environment. Wrapping the SWCNT with a polyfluorene polymer provides the best isolation from the environment and yields the brightest emission with near-resolution limited spectral line width of 270 μeV, as well as spectrally resolved emission wings associated with localized acoustic phonons. Pump-dependent studies further revealed that the defect states are capable of emitting single, sharp, isolated PL peaks over 3 orders of magnitude increase in pump power, a key characteristic of two-level systems and an important prerequisite for single-photon emission with high purity. These findings point to the tremendous potential of sp 3 defects in development of room temperature quantum light sources capable of operating at telecommunication wavelengths as the emission of the defect states can readily be extended to this range via use of larger diameter SWCNTs.

By separating the photons from slow and fast decays of single and multi-exciton states in a time gated 2 nd order photon correlation experiment, we show that solitary oxygen dopant states of single-walled carbon nanotubes (SWCNTs) allow emission of photon pairs with efficiencies as high as 44% of single exciton emission. Our pump dependent time resolved photoluminescence (PL) studies further reveal diffusion-limited exciton-exciton annihilation as the key process that limits the emission of multi-excitons at high pump fluences. We further postulate that creation of additional permanent exciton quenching sites occurring under intense laser irradiation leads to permanent PL quenching. With this work, we bring out multi-excitonic processes of solitary dopant states as a new area to be explored for potential applications in lasing and entangled photon generation.

Understanding the charge transport characteristics and their limiting factors in organolead halide perovskites is of great importance for the development of competitive and economically advantageous photovoltaic systems derived from these materials. In the present work, we examine the charge carrier mobilities in CH 3 NH 3 PbI 3 (MAPI) thin films obtained from a one-step synthesis procedure and in planar n-i-p devices based on these films. By performing time-of-flight measurements, we find mobilities around 6 cm 2 /V s for electrons and holes in MAPI thin films, whereas in working solar cells, the respective effective mobility values are reduced by 3 orders of magnitude. From complementary experiments on devices with varying thicknesses of electron and hole transport layers, we identify the charge extraction layers and the associated interfaces rather than the perovskite material itself as the major limiting factors of the charge carrier transport time in working devices.

Toward a truly photostable PbSe quantum dot (QD), we apply the thick-shell or "giant" QD structural motif to this notoriously environmentally sensitive nanocrystal system. Namely, using a sequential application of two shell-growth techniques-partial-cation exchange and successive ionic layer adsorption and reaction (SILAR)-we are able to overcoat the PbSe QDs with sufficiently thick CdSe shells to impart new single-QD-level photostability, as evidenced by suppression of both photobleaching and blinking behavior. We further reveal that the crystal structure of the CdSe shell (cubic zinc-blende or hexagonal wurtzite) plays a key role in determining the photoluminescence properties of these giant QDs, with only cubic nanocrystals sufficiently bright and stable to be observed as single emitters. Moreover, we demonstrate that crystal structure and particle shape (cubic, spherical, or tetrapodal) and, thereby, emission properties can be synthetically tuned by either withholding or including the coordinating ligand, trioctylphosphine, in the SILAR component of the shell-growth process.

All-dielectric metasurfaces made from arrays of high index nanoresonators supporting strong magnetic dipole modes have emerged as a low-loss alternative to plasmonic metasurfaces. Here we use oxygen-doped single-walled carbon nanotubes (SWCNTs) as quantum emitters and couple them to silicon metasurfaces to study effects of the magnetic dipole modes of the constituent nanoresonators on the photoluminescence (PL) of individual SWCNTs. We find that when in resonance, the magnetic mode of the silicon nanoresonators can lead to a moderate average PL enhancement of 0.8-4.0 of the SWCNTs, accompanied by an average increase in the radiative decay rate by a factor of 1.5-3.0. More interestingly, single dopant polarization experiments show an anomalous photoluminescence polarization rotation by coupling individual SWCNTs to silicon nanoresonators. Numerical simulations indicate that this is caused by modification of near-field polarization distribution at certain areas in the proximity of the silicon nanoresonators at the excitation wavelength, thus presenting an approach to control emission polarization. These findings indicate silicon nanoresonators as potential building blocks of quantum photonic circuits capable of manipulating PL intensity and polarization of single photon sources.

Single-walled carbon nanotubes (SWCNTs) have potential to act as light-harvesting elements in thin film photovoltaic devices, but performance is in part limited by the efficiency of exciton diffusion processes within the films. Factors contributing to exciton transport can include film morphology encompassing nanotube orientation, connectivity, and interaction geometry. Such factors are often defined by nanotube surface structures that are not yet well understood. Here, we present the results of a combined pump-probe and photoluminescence imaging study of polyfluorene (PFO)-wrapped (6,5) and (7,5) SWCNTs that provide additional insight into the role played by polymer structures in defining exciton transport. Pump-probe measurements suggest exciton transport occurs over larger length scales in films composed of PFO-wrapped (7,5) SWCNTs, compared to those prepared from PFO-bpy-wrapped (6,5) SWCNTs. To explore the role the difference in polymer structure may play as a possible origin of differing transport behaviors, we performed a photoluminescence imaging study of individual polymer-wrapped (6,5) and (7,5) SWCNTs. The PFO-bpy-wrapped (6,5) SWCNTs showed more uniform intensity distributions along their lengths, in contrast to the PFO-wrapped (7,5) SWCNTs, which showed irregular, discontinuous intensity distributions. These differences likely originate from differences in surface coverage and suggest the PFO wrapping on (7,5) nanotubes produces a more open surface structure than is available with the PFO-bpy wrapping of (6,5) nanotubes. The open structure likely leads to improved intertube coupling that enhances exciton transport within the (7,5) films, consistent with the results of our pump-probe measurements.

Photoluminescent defect states introduced by sp(3) functionalization of semiconducting carbon nanotubes are rapidly emerging as important routes for boosting emission quantum yields and introducing new functionality. Knowledge of the relaxation dynamics of these states is required for understanding how functionalizing agents (molecular dopants) may be designed to access specific behaviors. We measure photoluminescence (PL) decay dynamics of sp(3) defect states introduced by aryl functionalization of the carbon nanotube surface. Results are given for five different nanotube chiralities, each doped with a range of aryl functionality. We find that the PL decays of these sp(3) defect states are biexponential, with both components relaxing on time scales of ∼100 ps. Exciton trapping at defects is found to increases PL lifetimes by a factor of 5-10, in comparison to those for the free exciton. A significant chirality dependence is observed in the decay times, ranging from 77 ps for (7,5) nanotubes to >600 ps for (5,4) structures. The strong correlation of time constants with emission energy indicates relaxation occurs via multiphonon decay processes, with close agreement to theoretical expectations. Variation of the aryl dopant further modulates decay times by 10-15%. The aryl defects also affect PL lifetimes of the free E11 exciton. Shortening of the E11 bright state lifetime as defect density increases provides further confirmation that defects act as exciton traps. A similar shortening of the E11 dark exciton lifetime is found as defect density increases, providing strong experimental evidence that dark excitons are also trapped at such defect sites.

Covalent dopants in semiconducting single wall carbon nanotubes (SWCNTs) are becoming important as routes for introducing new photoluminescent emitting states with potential for enhanced quantum yields, new functionality, and as species capable of near-IR room-temperature single photon emission. The origin and behavior of the dopant-induced emission is thus important to understand as a key requirement for successful room-T photonics and optoelectronics applications. Here, we use direct correlated two-color photoluminescence imaging to probe how the interplay between the SWCNT bright E(11) exciton and solitary dopant sites yields the dopant-induced emission for three different dopant species: oxygen, 4-methoxybenzene, and 4-bromobenzene. We introduce a route to control dopant functionalization to a low level as a means for introducing spatially well-separated solitary dopant sites. Resolution of emission from solitary dopant sites and correlation to their impact on E(11) emission allows confirmation of dopants as trapping sites for localization of E(11) excitons following their diffusive transport to the dopant site. Imaging of the dopant emission also reveals photoluminescence intermittency (blinking), with blinking dynamics being dependent on the specific dopant. Density functional theory calculations were performed to evaluate the stability of dopants and delineate the possible mechanisms of blinking. Theoretical modeling suggests that the trapping of free charges in the potential well created by permanent dipoles introduced by dopant atoms/groups is likely responsible for the blinking, with the strongest effects being predicted and observed for oxygen-doped SWCNTs.

On-demand single-photon sources capable of operating at room temperature and the telecom wavelength range of 1,300-1,500 nm hold the key to the realization of novel technologies that span from sub-diffraction imaging to quantum key distribution and photonic quantum information processing. Here, we show that incorporation of undoped (6,5) single-walled carbon nanotubes into a SiO2 matrix can lead to the creation of solitary oxygen dopant states capable of fluctuation-free, room-temperature single-photon emission in the 1,100-1,300 nm wavelength range. We investigated the effects of temperature on photoluminescence emission efficiencies, fluctuations and decay dynamics of the dopant states and determined the conditions most suitable for the observation of single-photon emission. This emission can in principle be extended to 1,500 nm by doping of smaller-bandgap single-walled carbon nanotubes. This easy tunability presents a distinct advantage over existing defect centre single-photon emitters (for example, diamond defect centres). Our SiO2-encapsulated sample also presents exciting opportunities to apply Si/SiO2-based micro/nano-device fabrication techniques in the development of electrically driven single-photon sources and integration of these sources into quantum photonic devices and networks.