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A high-power subterahertz (THz) push–push oscillator topology is proposed. Adopting Hartley oscillator topology with transformer as its resonator, the proposed oscillator reduces the effective parasitic capacitance of transistors; therefore, a larger size transistor can be adopted, which increases the output power while still maintaining the same oscillation frequency. The adoption of the transformer also improves the LC resonator’s $Q$ -factor, further improving the output power and dc-to-RF efficiency. Implemented in 65-nm CMOS technology, the measured output power of the proposed single oscillator is 2.3 dBm at 264 GHz with 2.76% dc-to-RF efficiency and −96.8 dBc/Hz of the phase noise at a 10-MHz offset.

Sinusoidal oscillators are often used in many industrial applications. Hartley oscillator is the basic kind of sinusoidal oscillators, so the study of its performance is decisive. While designing a sinusoidal oscillator, the traditional Barkhausen criterion is widely used for its simplicity, however it is only necessary condition for oscillating. If the device characteristic changes in some way, the Barkhausen criterion may yield false results. A new necessary and sufficient oscillation criterion for Hartley oscillator is firstly proposed in this research to take the place of the traditional Barkharsen criterion based on our recent research (Chen’s Electric Unifying Approach). The proposed approach is a simple oscillation determining criterion which builds up a stable sinusoidal oscillator. The derived oscillation criterion reveals an accurate oscillating condition and a more precise oscillating frequency.

New analytical equations for amplitude analysis of MOS Hartley oscillator are presented. Using exact large-signal circuit analysis, analytical equations for estimating the amplitude of Hartley oscillator are derived that considers all operation regions of transistor; including saturation, triode and cutoff. The analysis is based on a reasonable estimation for the output waveform. The estimated waveform should satisfy the nonlinear differential equations describing the circuit. Using this novel point, we can simply find the unknown parameters of the waveform, especially amplitude. The validity of the resulted equations is verified through simulations using TSMC 0.18 μm CMOS process. The amplitude calculated from this approach has a very good agreement with simulation for a large range of circuit parameters.

This paper proposes a receiver circuit for inductive ear-to-ear communication. Its input resonance structure, an LCR front-end, is optimized for both a data transmission rate of 100 kbit/s and maximum voltage excess. Following an analytical study, the optimal quality factor $Q_{\text {LCR}}$ is found to be 12.8. Subsequent amplification of ON-OFF keyed bits is performed with a four-stage JFET amplifier, introducing a total amplification of 68.6 dB at a sensitivity of $31.6~\mu \text{V}$ . Each stage is implemented in common-source JFET topology containing a current source in its drain path instead of the conventional drain resistor. This modification allows for a per-stage increase in voltage amplification by a factor of 1.87, avoiding extra quiescent current (detailed circuit theory is added). A hardware realization for signal demodulation reconstructs the baseband signal. In combination with a dedicated transmitter, a Hartley Oscillator, the inductive ear-to-ear transmission system demonstrates a reliable functionality over a distance of 18 cm. Operation is possible with a standard 1.5 V battery cell requiring low currents on a discrete benchtop prototype [transmitter: 0.8 mA; receiver: 4.0 mA]. Applying a carrier frequency of 3.175 MHz, the system is fully compliant with ITU regulation 5.115.

This paper presents a novel op-amp based LC oscillator circuit design for wireless communications. This LC oscillator can be classified as a harmonic oscillator. Unlike the Hartley, Colpitts and Clapp oscillators, the resonant tank circuit of the proposed op-amp based LC oscillator is composed of only two components – single-inductor and single-capacitor, in parallel connection. Also, the LC oscillator does not use resistor components. The aim of this paper is to provide a low cost solution for sinusoidal oscillator design, particularly in low power mobile applications, where the power amplifier stage can be eliminated if the RF oscillator has enough output current and output voltage capabilities to supply the antenna load. On the other hand, the digital modulator is also integrated with the RF oscillator. The proposed op-amp based LC oscillator is analyzed and discussed using PSPICE simulation results. To verify the concept, experimental results are given. It can be observed that the simulation results are in line with the experimental results.

The paper proposes a new mathematical model in normed dynamical variables for researching the dynamics of the deterministic chaos transistor oscillator built upon the Hartley oscillator. New equations determining normed dynamic variables, non-linear functions approximating the base current and emitter-base voltage, and coefficients of self-oscillatory system of deterministic chaos transistor oscillator built upon the Hartley circuit are considered. Numerical mathematical modelling of the Hartley oscillator chaotic dynamics in MathCad 15.0 software was performed. Phase portraits, as well as time and frequency characteristics of the generated chaotic oscillations were depicted. Results of experimental researching chaotic dynamics of the transistor oscillator on the basis of the Hartley circuit were obtained using NI Multisim 10.1 virtual lab.

cited By 0; International audience; Energy harvesting from various ambient energy sources keeps gaining interest to deal with the challenges arising from more and more widespread Internet of Things applications in consumer electronics and industrial applications such as remote sensing. However, available energy is scarce and designers must comply with small size package and thermal dissipation that inevitably lead to compromises. This paper presents a transformer-free and self-powered oscillator that can be directly powered from a very low dc voltage source such as a thermoelectric module and able to deliver dc bias output. Using off-the-shelves parts, such a design is less cumbersome and gives more freedom to designers while tailoring their circuits with respect to their applications. The oscillator consists of a modified Hartley oscillator including a supplementary capacitor that provides a bias voltage in its output. Theoretical analysis is validated through experimental measurements showing that the proposed solution could be deployed in buildings and/or wearable devices as small and cheap complete microgenerators using for example thermoelectric elements or microbial fuel cells. © 1982-2012 IEEE.

This paper studies a new dual-band CMOS class-C voltage-controlled oscillator (VCO). The oscillator consists of a dual-resonance LC resonator in shunt with two pairs of capacitive cross-coupled nMOSFETs. The proposed oscillator has been implemented with the TSMC 0.18 μm CMOS technology, and it shows a frequency tuning range with two frequency bands and a small tuning hysteresis is measured. The oscillator can generate differential signals at 2.4 GHz and 6.9 GHz and it also can generate concurrent frequency oscillation while the circuit is biased around the bias with frequency tuning hysteresis. With the supply voltage of VDD = 1.1 V, the VCO-core current and power consumption of the oscillator are 2.90 mA and 3.19 mW, respectively. The die area of the class-C oscillator is 0.9 × 0.97 mm2. Overvoltage stress is applied to the oscillator, measurement indicates the concurrent oscillation is sensitive to overvoltage stress.

Light has been generated through Plasma using radio frequency source in 4Ft 40W disused fluorescent tube. As against the thermionic and incandescence source of running a fluorescent tube which is actually difficult to get started due to the resistance of the gases enclosed inside, a Radio Frequency signal of 30MHz generated using a designed Hartley Oscillator is employed. The power of the signal generated is amplified from 231mW to 197.8W using a modeled inverter. The coupled Hartley oscillator and the inverter form an ionizing circuit. The gases inside fluorescent tube consist of mercury Vapor, argon, krypton or Neon. When sufficient energy is supplied to these gases, by the ionizing circuit, ionization and excitation takes place which makes otherwise neutral gases, to change state to a cloud of ionized gas called Plasma. When excited electrons in the gases return to the ground state they lose energy in packets called Photon. This Photon is ultraviolet light which is not visible to the human eye but when it strikes the walls of the tube coated with Phosphor it glows whereby light is generated. The high electric field Radio frequency circuit designed has generated light in a fluorescent tube without the use of starter and ballast. It has also generated light in otherwise “dead” or disused fluorescent bulbs.

This paper proposes a Class E/F $_3$ tuned power oscillator based on the Class E/F $_3$ amplifier. The oscillator has a feedback-loop circuit and starts the oscillation in automatic. In addition, the oscillator achieves zero-voltage switching and zero-voltage derivative switching; therefore, the switching losses are reduced under high oscillation frequency. Moreover, the third harmonic tuned by providing a third harmonic series resonant circuit reduces the switch voltage stress of the mosfet sufficiently. The oscillator was designed, built and tested using an IRFR120Z power mosfet . Under the condition of the input voltage 6.003 V, following results were shown: the measured oscillation frequency was 801.6 kHz, the output power was 0.9075 W, and the power conversion efficiency was 86.24%.

A design for a radio frequency (RF) neutron spin flipper obtained from magneto-static and neutron spin transport simulations is presented. The RF flipper constructed from this design provides a flipping probability of 0.999 or better for a beam size 6 cm wide and 15 cm high and a wavelength band between 0.4 and 0.6 nm. Three permanent magnet guide field sections with air gaps provide a linear field gradient along the beam propagation direction over a large cross-sectional area. An RF oscillator based on coupling the resonant coil of a Hartley oscillator to the excitation coil was developed, which provides a higher current and, thereby, a larger RF amplitude, as compared to a conventional RF power amplifier. Two opaque He3 neutron spin filters were employed to measure the flipping probability of the flipper with very high precision. A spatially uniform flipping probability of 0.9995(2) or higher was measured over the large cross-sectional area neutron guide. This RF neutron spin flipper will be employed in a polychromatic beam reflectometer at the National Institute of Standards and Technology Center for Neutron Research. This design can be applied to other polarized neutron instruments or applications requiring a very high continuous flipping probability of the neutron spin for a large cross-sectional area beam.

In this paper, we propose a method to broaden a tuning range of a CMOS LC-tank oscillator without sacrificing its area. The extra tuning range is achieved by forcing a strongly coupled transformer-based tank into a common-mode resonance at a much higher frequency than in its main differential-mode oscillation. The oscillator employs separate active circuits to excite each mode but it shares the same tank, which largely dominates the core area but is on par with similar single-core designs. The tank is forced in common-mode oscillation by two injection locked Colpitts oscillators at the transformer's primary winding, while a two-port structure provides differential-mode oscillation. An analysis is also presented to compare the phase noise performance of the dual-core oscillator in common-mode and differential-mode excitations. A prototype implemented in digital 40-nm CMOS verifies the dual-mode oscillation and occupies only 0.12 mm2 and measures 56% tuning range.

In this brief, a cross-coupled oscillator is analyzed based on the two-port network theory and the $Y$ - parameter model for a transistor. Contrary to the previous works, the proposed analysis shows that LC cross-coupled oscillators have an additional and higher pure imaginary natural frequency at which the circuit cannot oscillate. The analysis investigates the sufficient condition at which the circuit is able to oscillate at this higher frequency. For the oscillation at the higher frequency mode, we propose adding an extra stage and making a three-stage ring oscillator. The equations obtained from this analysis indicate that the oscillation start-up condition depends on the oscillation frequency. Hence, increasing the speed of the oscillator does not satisfy the start-up condition of oscillators. Our analysis shows that the maximum frequency, in which the circuit stops oscillation in the ring oscillator, is higher than the cross-coupled oscillator and this maximum frequency is very close to the maximum frequency of the transistor.

The purpose of this work is to provide an experimental demonstration for the development of sinusoidal oscillations in a fractional-order Hartley-like oscillator. Solid-state fractional-order electric double-layer capacitors were first fabricated using graphene-percolated P(VDF-TrFE-CFE) composite structure, and then characterized by using electrochemical impedance spectroscopy. The devices exhibit the fractional orders of 0.6 and 0.74 respectively (using the model Z c = R s + 1 / ( j ω ) α C α ), with the corresponding pseudocapacitances of approximately 93nF sec − 0.4 and 1.5nF sec − 0.26 over the frequency range 200kHz–6MHz (Rs

A new concept of oscillator based on a folded waveguide slow-wave structure (FWG SWS) is studied. The resonant cavity of the oscillator is formed by a section of FWG SWS, a length-adjustable waveguide, and a waveguide loaded by multilayer dielectric. The beam is synchronized with the forward wave on the SWS. If an FWG traveling-wave amplifier (TWA) is driven by this oscillator, there is a possibility that the amplifier and the oscillator share the same design and the same art of manufacturing and power supplier. A forward-wave oscillator based on a design of a TWA in 2-mm band is calculated by both a 1-D nonlinear code and particle-in-cell (PIC) simulation. From both the code and the simulation results, when the oscillator is 30-pitch long, the operation voltage 22000 V and the start current is 3 mA at 138 GHz. When the oscillator is 22-pitch long, operation current 15 mA, and operation voltage 22400 V, simulation result shows that the output power is 58.32 W, and the efficiency is 17.26% at 133.2GHz. When both the voltage and length of the length-adjustable waveguide are tuned, the oscillator can operate within all the first dispersion band of the SWS. If only voltage is tuned, the oscillator can oscillate at several discrete frequencies.

In this study, the authors present a numerical study of the dynamics of a non-linear optoelectronic oscillator (OEO) based on the resonant tunnelling diode (RTD) oscillator incorporating a photo-detector and coupled to a non-linear electrical circuit. In the first part, it is found that the RTD-OEO oscillator presents periodic and quasiperiodic behaviours depending on the values of the parameters of a pulse-like optical signal. In the second part where the RTD-OEO is coupled to the Van der Pol oscillator, the dynamics present a variety of states including bursting, relaxation and sinusoidal oscillations.

This paper presents a low-power, small-size, wide tuning-range, and low supply voltage CMOS current-controlled oscillator (CCO) for current converter applications. The proposed oscillator is designed and fabricated in a standard 180-nm, single-poly, six-metal CMOS technology. Experimental results show that the oscillation frequency of the CCO is tunable from 30Hz to 970MHz by adjusting the control current in the range of 100fA to 10A, giving an overall dynamic range of over 160dB. The operation of the circuit is nearly independent of the power supply voltage and the circuit operates at supply voltages as low as 800mV. Also, at this voltage, with control currents in the range of sub-nano-amperes, the power consumption is about 30nW. These features are promising in sensory and biomedical applications. The chip area is only 8.811.5m2. A new current-controlled oscillator for detecting a wide current range is proposed.The circuit can detect and convert low currents in the range of femto-amperes.The math behind the circuit operation is extracted.It is robust against supply voltage, temperature, and process parameter variations.The circuit is compact, low-power, and it is compatible with technology scaling.

This paper reports a new realization of linear Voltage-Controlled Oscillator (VCO) using three Current-Feedback Op-Amps (CFOAs), three analog multipliers, and only four passive components. Thus, minimum numbers of passive components are used to devise a canonic sinusoidal oscillator. The circuit provides non-interactive electronic tuning of both the Condition of Oscillation (CO) and the Frequency of Oscillation (FO) via the gains of two di erent analog multipliers. The impedance at output node exhibits low impedance which is easy to directly connect to load without any additional voltage bu er. The proposed circuit has been simulated in SPICE using macro-model of AD844 CFOA ICs and AD633 multiplier ICs.

In this paper, a novel RF range programmable ring oscillator is designed using independently driven underlap double gate (IDUDG) MOSFET and its performance is studied. The study also presents the variation in analog parameters of the designed oscillator circuit considering different source/drain ( S / D ) lateral straggle lengths of the IDUDGMOS device. The primary objective behind the programmable oscillator design is the variation of frequency with number of inverter stages and the back gate voltage of IDUDGMOS. The analog parameters analyzed are, the bandwidth, the Total Harmonic Distortion (THD), the linearity and the power consumption of the circuit. The proposed circuit reduces power loss and presents larger bandwidth than other established oscillator circuit designs. The study also shows that IDUDGMOS with larger S / D straggle length improves bandwidth of the oscillator circuit.

An LC-tuned sinusoidal voltage-controlled oscillator (VCO) using temperature-stable linear operational transconductance amplifiers (OTAs) is presented. Its architecture is based on Hartley oscillator configuration, where the inductor is active one realized with two OTAs and a grounded capacitor. Two diode limiters are used for limiting amplitude. A prototype oscillator built with discrete components exhibits less than 3.1% nonlinearity in its current-to-frequency transfer characteristic from 1.99 MHz to 39.14 MHz and frequency stability to the temperature drift over 0 to . The total harmonic distortion (THD) is as low as 4.4 % for a specified frequency-tuning range. The simulated phase noise of the VCO is about -108.9 dBc/Hz at 1 MHz offset frequency in frequency range of 0.4 - 46.97 MHz and property of phase noise of VCO is better than colpitts-VCO.

In this paper, a versatile quadrature oscillator using single Differential Difference Second Generation Dual-X Current Conveyor (DD-DXCCII) as an active element, two grounded capacitors and three grounded resistors is presented. The proposed oscillator provides two current outputs and three voltage outputs in quadrature relationship simultaneously so named as versatile quadrature oscillator. The proposed versatile quadrature oscillator exhibits the feature of orthogonal control over the frequency of oscillation and condition of oscillation. Effects of non-idealities along with sensitivity analysis are also analyzed. The proposed circuit has low active and passive sensitivities. Parasitic study is further explored. The simulation results with 0.18μm CMOS process parameters using PSPICE are also given. Possible realization of proposed oscillator using AD-844 and LM13600 along with some simulation results are also given for completeness sake.

A fractional-order capacitor (FOC) is developed using a Molybdenum disulfide ferroelectric polymer composite. The fabricated FOC exhibits constant phase over five decades between 100 Hz-10 MHz, which is the broadest operating frequency bandwidth reported so far for an FOC. Furthermore, a fractional-order Hartley oscillator is built using this FOC, and provide ten times higher oscillation frequency than the frequency of the conventional Hartley oscillator counterpart.

A novel and simple oscillator based interface circuit for the medium range capacitive sensor ( $1{\mu}\mathbf{F}$ to $100{\mu}\mathbf{F}$ ) is presented. Op-amp based Hartley oscillator circuit is used to convert a change in capacitance to change in frequency. As the output of the signal conditioning circuit is frequency, so it is very easy to use this frequency directly for transmission in communication systems. In this manner, the presented circuit can be used directly for acquiring the reading from the remotely placed sensors. An IoT based circuit system is also presented here for online measuring the capacitance and display it on the local server. The described circuit is simple to build and as it is op-amp based circuit, so losses are very less and there is negligible loading effect while connected to the sensor. The output frequency from the oscillator circuit is measured, and then it is converted into an equivalent voltage, which then measured by Arduino and Raspberry-pi sends this measured values to the Wi-Fi based server for online display.

This paper proposes an inductive transmitter with associated rsppiver for unidirectional through-the-head communicatisp. The system is intended for use in assistive listening devices. It complies with ITU regulation 5.115 by employing a carrier frequency of 3.175 MHz. A Hartley oscillator serves as transmitter to realize both OOK bit modulation and data transmission. Its counterpart, a four-stage common source JFET amplifier, detects and amplifies transmitted signals. Small, self-twisted solenoid coils are operated as transducer elements. Measurements demonstrate the reliable functionality of the point-to-point network over a distance of 20 cm with a data rate of 100 kBit/s. Operation is possible with a standard 1.5 V battery cell, whereby low currents are measured on our discrete benchtop prototype [transmitter: 0.8 mA; receiver 1.7 mA].

This paper describes a novel high-power ultra high frequency oscillator based on hollow cathode gas discharge. The oscillator generates the pulses with a carrier frequency of 380 MHz, power of 390 kW, and pulse duration of 450 ns. The oscillator has been tested in a pulsed-periodical regime with a pulse repetition rate of 2.5 kHz. The lifetime of the oscillator is 10 7 pulses. The oscillator has been tested for operation into radiating three-element array of dipole antennas. These tests showed the oscillator and antenna array compliance.

A configuration using current feedback amplifiers AD844 and multiplier AD534 has been presented, which is capable of realizing Voltage Controlled Floating Inductance (proportional and in-verse proportional). The application of band pass filter in Figure 4(a), notch filter in Figure 5(a) and Hartley oscillator in Figure 6(a) and simulation result in Figures 4(b)-(d), Figures 5(b)-(d), Figures 6(b)-(d) shows the workability of proposed configuration.

Low-frequency double-resonance quartz crystal oscillator was developed with active inductance circuit aiming the start-up of stable oscillation of tuning fork-type quartz crystal resonator at 32.768 kHz within 0.37 ms. The initial oscillation is triggered by a part of crystal oscillator forming a CR oscillator. The negative resistance ranges to 4 MΩ at gmf of 4.1 μA/V. In a limited frequency range, the circuit shows negative reactance Ccci = -3.4 pF equivalent to inductance Lcc = 9.8 H. The Allan standard deviation indicated 10-11 to 10-10, showing high stability comparable to general quartz crystal oscillator.

Since the conventional Duffing circuit is limited to low frequency signals detection, this paper proposes a new type of Duffing circuit for high frequency signals, which effectively avoids the instantaneous saturation problem. It also gives an operational block diagram and the detailed design of the main unit circuit. By adjusting the parameters of several elements, the circuit can realize the wide frequency detection from low to high frequency. Simulation results prove that the circuit is a chaotic system and has the extreme sensitivity to the initial condition.

The purpose of this work is to provide analysis and experimental evidence of the existence of sinusoidal oscillations in a fractional-order Hartley oscillator. For this purpose a simple operational amplifier based implementation of the oscillator is studied and verified in three different cases. In particular, the first case is when the passive T-network is composed of two identical inductors and a fractional-order capacitor while the second and third cases correspond to this network being realized with one fractional-order inductor. The fractional-order characteristic equation is different in each of the three cases and hence the start-up condition and frequency of oscillation are also different in each case.

This paper presents a new implementation for a buffer-feedback oscillator (BFO) at 140 GHz. A novel transmission line (TL) configuration using the top most metal layer of semiconductor fabrication process as the ground, is used for realizing of coupled inductors in the oscillator. This type of TL is shielding the oscillator from packaging effects as well as loss of substrate. Resonance frequency is further improved by coupling the output buffer load into the oscillator resonator tank. The proposed BFO achieves 7.2dBm of output power and consumes 25.2mW, yet occupies only 50×50μm2 of chip area.

The paper considers a new electric diagram of the microelectronic self-excited oscillator based on the bipolar transistor structure with negative resistance. The oscillator operates in oscillatory and relaxation modes. Chaotic mode of the self-excited oscillator was provided by installing additional components into a basic circuit. Results of the deterministic chaos microelectronic oscillator simulation were obtained. Simulation was performed with standard PSPICE models of radio components. Time and frequency characteristics of the oscillations were obtained.

A five-dimensional (5D) controlled two-stage Colpitts oscillator is introduced and analyzed. This new electronic oscillator is constructed by considering the well-known two-stage Colpitts oscillator with two further elements (coupled inductors and variable resistor). In contrast to current approaches based on piecewise linear (PWL) model, we propose a smooth mathematical model (with exponential nonlinearity) to investigate the dynamics of the oscillator. Several issues, such as the basic dynamical behaviour, bifurcation diagrams, Lyapunov exponents, and frequency spectra of the oscillator, are investigated theoretically and numerically by varying a single control resistor. It is found that the oscillator moves from the state of fixed point motion to chaos via the usual paths of period-doubling and interior crisis routes as the single control resistor is monitored. Furthermore, an experimental study of controlled Colpitts oscillator is carried out. An appropriate electronic circuit is proposed for the investigations of the complex dynamics behaviour of the system. A very good qualitative agreement is obtained between the theoretical/numerical and experimental results.

A new type of strain sensor using a CMOS inverter oscillator circuit has been developed. This sensor does not require an amplifier because a counting device measures the frequency changes in the circuit voltage output caused by the resistance changes in the strain gauge. The characteristics and measurement accuracy of the sensor that consists of an oscillator circuit and a strain gauge are confirmed by static tensile tests of specimens. The test results reveal that the same level of accuracy as that of a conventional sensor is achieved by using a simple compensation factor assuming the existence of an internal resistance on the circuit., 形態: 図版あり, Physical characteristics: Original contains illustrations, 資料番号: PA1520006000

Periodic steady-state behaviour of cross-coupled LC-tank oscillator is of critical importance in ultra-low power, low-voltage transceiver circuits. Understanding the major factors affecting amplitude, oscillation frequency and power consumption would lead to more optimised oscillator design particularly for short-range wireless transceivers. This study presents a new approach for evaluating the amplitude of the main component, oscillation frequency and power consumption of cross-coupled LC-tank oscillator. Three major factors, affecting oscillator functionality are examined. In order to obtain a general design methodology, the effects of oscillator parameters such as transistors' sizes, inductor and capacitor values are investigated. An intuitive discussion about oscillator behaviour and a design procedure are presented. The theoretical results are verified by circuit simulations in the 0.18 μm CMOS process.

In this paper, a high frequency ring oscillator with low power consumption is proposed.The proposed ring oscillator is based on GRO by applying boot strap technique. Simulation resultsindicate that the FoM(Power Consumption/Oscillation Frequency) of the proposed ring oscillator isless than that of the conventional ring oscillator.

Tuned power oscillators are important power-electronics circuits for achieving high power density. In addition, it is possible to apply the soft-switching techniques and high power-conversion efficiency can be achieved at high frequencies. This chapter presents fundamental operation and design of high-frequency high-efficiency tuned power oscillator. Concretely, the class-B oscillator family is introduced along with operation principle and design example.

A simple oscillator with perfect output power using a series feedback and circuit matching is proposed. The oscillator is implemented by tuning the positive feedback of the source and gate of the transistor and provides a free-running oscillating signal of 12 GHz. The output power of the oscillator is 10.16 dBm. This result is in good agreement with simulation.