1. Hole doping and chemical pressure effects on the strong coupling superconductor PdTe
- Author
-
Ando Ide, Harald Olaf Jeschke, Kaya Kobayashi, and Li Chen
- Subjects
Superconductivity ,Materials science ,Condensed matter physics ,Chalcogenide ,Doping ,General Physics and Astronomy ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Magnetic field ,Condensed Matter::Materials Science ,chemistry.chemical_compound ,Chalcogen ,chemistry ,Condensed Matter::Superconductivity ,0103 physical sciences ,Condensed Matter::Strongly Correlated Electrons ,Density functional theory ,Physical and Theoretical Chemistry ,010306 general physics ,0210 nano-technology ,Pnictogen ,Type-II superconductor - Abstract
Chemical doping of known superconductors is a probate strategy to test and enhance our understanding of which parameters control the critical temperature T-c and the critical magnetic fields. The transition metal chalcogenide PdTe is considered a conventional type II superconductor but its resilience to magnetic Fe doping is noteworthy. Isoelectronic Ni doping has been performed, but the effects of doping charges into PdTe have been so far unexplored. We follow two strategies to introduce holes into PdTe and to exert chemical pressure on it: by pnictogen doping on the chalcogen site PdTe1-xSbx and by systematically introducing a Pd deficiency in Pd1-yTe. We find that the superconducting T-c is very sensitive to both kinds of doping. We employ density functional theory to rationalize the observations. We conclude that in PdTe, the effects of charge doping take the lead but we can also identify a structural parameter that correlates with T-c.
- Published
- 2021