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Femtosecond laser pulses are currently regarded as an emerging and promising tool for processing wide bandgap dielectric materials across a variety of high-end applications, although the associated physical phenomena are not yet fully understood. To address these challenges, we propose an original, fully analytical model combined with Two Temperatures Model (TTM) formalism. The model is applied to describe the interaction of fs laser pulses with a typical dielectric target (e.g., Sapphire). It describes the heating of dielectrics, such as Sapphire, under irradiation by fs laser pulses in the range of (1012–1014) W/cm2. The proposed formalism was implemented to calculate the free electron density, while numerical simulations of temperature field evolution within the dielectrics were conducted using the TTM. Mathematical models have rarely been used to solve the TTM in the context of laser–dielectric interactions. Unlike the TTM applied to metals, which requires solving two heat equations, for dielectrics the free electron density must first be determined. We propose an analytical model to solve the TTM equations using this parameter. A new simulation model was developed, combining the equations for non-equilibrium electron density determination with the TTM equations. Our analyses revealed the non-linear nature of the physical phenomena involved and the inapplicability of the Beer–Lambert law for fs laser pulse interactions with dielectric targets at incident laser fluences ranging from 6 to 20 J/cm2. [ABSTRACT FROM AUTHOR]

We demonstrate a microprobe technique that can simultaneously measure thermal conductivity κ and Seebeck coefficient α of thin films. In this technique, an alternative current joule-heated V-shaped microwire that serves as heater, thermometer and voltage electrode, locally heats the thin film when contacted with the surface. The κ is extracted from the thermal resistance of the microprobe and α from the Seebeck voltage measured between the probe and unheated regions of the film by modeling heat transfer in the probe, sample and their contact area, and by calibrations with standard reference samples. Application of the technique on sulfur-doped porous Bi2Te3 and Bi2Se3 films reveals α=-105.4 and 1.96 μV/K, respectively, which are within 2% of the values obtained by independent measurements carried out using microfabricated test structures. The respective κ values are 0.36 and 0.52 W/mK, which are significantly lower than the bulk values due to film porosity, and are consistent with effective media theory. The dominance of air conduction at the probe-sample contact area determines the microscale spatial resolution of the technique and allows probing samples with rough surfaces. [ABSTRACT FROM AUTHOR]