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Recently, silicon carbide (SiC) power modules of the 3.3 kV voltage class became available and are a promising candidate to replace silicon power modules in traction applications. However, the more than three times higher Young’s Modulus compared to silicon leads to a reduced lifetime under thermo-mechanical stress. This could pose a significant obstacle in their implementation, since traction applications are particularly demanding in their mission profiles with respect to load cycling, but also to environmental conditions. Thus, the thermo-mechanical stress is not just limiting the lifetime itself, but might also promote the humidity induced degradation due to delamination or micro-cracks. In this work, multiple power cycling tests at different temperature swings on 3.3 kV SiC MOSFET chips in a power module were performed, to assess their ruggedness under thermo-mechanical stress. Before or afterwards, these modules were tested under standard HV-H3TRB conditions to verify the interaction between thermo-mechanical and humidity stress on the robustness of the modules.

Silicon carbide (SiC) MOSFETs are gaining more and more market share in typical silicon (Si) IGBT applications such as traction or renewable energies. Especially in reliability sensitive traction applications, medium voltage IGBT-modules (3.3 kV-6.5 kV) are widely used and introducing SiC-MOSFETs to such industries is the next self-evident step already on the way. While their superior electrical performance has been generally accepted already (e.g. [1]), SiC-modules have not yet established a track record of high reliability in this voltage class. For this study, 3.3kV SiC-MOSFET-switches were compared to standard Si-IGBTs regarding their humidity robustness under high voltage bias. Both chip types had been assembled in the same traction rated packages to exclude this influence. The Si-IGBTs resembled the well-known industry standard performance, while the SiC-MOSFETs show no degradation within the reported test time of 2000 h. Given the fact [2], that the latest Si-IGBT generation offers a much better humidity performance as well, the standardised HV-H³TRB is no longer sufficient to provoke failures within a reasonable testing time. On the one hand, this suggests that humidity driven failures will not be an issue under field conditions anymore. On the other hand, even harsher tests are required to investigate differences in humidity performance.

Reliability characterization of SiC devices is an ongoing activity. For this work, 650 V SiC JBS diodes in TO247 housings were tested in H3TRB. After a test period of 4000 hours none of the devices had failed during the test and only two out of sixteen devices had failed during blocking curve measurements performed at intermediate time steps. This is significantly better performance than many silicon devices offer today. The failure spots of the failed devices were detected at the edge of the main junction appearing as semi-circular cavities in the aluminum metallization. All other devices did not even show deviations from their original blocking curves.