159 results on '"Hanafusa, Hiroaki"'
Search Results
2. A novel NFKB1 variant in a Japanese pedigree with common variable immunodeficiency
3. Impact of Lactate Clearance on Clinical and Neurological Outcomes of Patients With Out-of-Hospital Cardiac Arrest Treated With Extracorporeal Cardiopulmonary Resuscitation: A Secondary Data Analysis*
4. Effect of stomach inflation during cardiopulmonary resuscitation on return of spontaneous circulation in out-of-hospital cardiac arrest patients: A retrospective observational study
5. Clinical utility of urinary mulberry bodies/cells testing in the diagnosis of Fabry disease
6. Direct observation of ultra-rapid solid phase crystallization of amorphous silicon films irradiated by micro-thermal-plasma-jet
7. Band-energy estimation on silicon cap annealed 4H-SiC surface using hard X-ray photoelectron spectroscopy
8. Extraction of interfacial thermal resistance across an organic/semiconductor interface using optical-interference contactless thermometry
9. Treatment Options for Infantile Spasms Syndrome with SCN8A: A Case Report and Literature Review
10. Expression of preference for the disclosure of secondary findings of comprehensive genomic profiling tests by cancer patients and relatives
11. A Japanese boy with NAA10-related syndrome and hypertrophic cardiomyopathy
12. Dravet syndrome and hemorrhagic shock and encephalopathy syndrome associated with an intronic deletion of SCN1A
13. Germ‐cell‐specific transcriptome analysis illuminates the chromatin and ubiquitin pathway in autism spectrum disorders
14. A girl with CLOVES syndrome with a recurrent PIK3CA somatic mutation and pancreatic steatosis
15. Lysinuric protein intolerance exhibiting renal tubular acidosis/Fanconi syndrome in a Japanese woman.
16. Development of a real-time temperature measurement technique for SiC wafer during ultra-rapid thermal annealing based on optical-interference contactless thermometry (OICT)
17. Single Crystalline Silicon CMOSFETs on Plastic and Their Application to Highly Sensitive Virus Detection System
18. Ultra-Fast Etching of Photoresist by Reactive Atmospheric-Pressure Thermal Plasma Jet
19. Impact after the Change from Voluntary to Universal Oral Rotavirus Vaccination on Consecutive Emergency Department Visits for Acute Gastroenteritis among Children in Kobe City, Japan (2016–2022)
20. Influence of UGT1A1 Genetic Variants on Free Bilirubin Levels in Japanese Newborns: A Preliminary Study
21. Precise measurement of the temperature of a silicon wafer by an optical-interference contactless thermometer during rapid plasma processing.
22. SiGe Sputter Epitaxy Technique and Its Application to SiGe Devices
23. Growth of high-crystallinity silicon films by a combination of intermittent pulse heating and plasma-enhanced chemical vapor deposition
24. Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric-pressure micro thermal plasma jet irradiation
25. Direct observation of three-dimensional transient temperature distribution in SiC Schottky barrier diode under operation by optical-interference contactless thermometry imaging
26. (Invited) Millisecond Annealing by Atmospheric Pressure Thermal Plasma Jet and Direct Imaging of Temperature Distribution Using Optical Interference Contactless Thermometry (OICT)
27. Characteristics of Millisecond Solid Phase Crystallized Silicon Films Formed by Micro-Thermal-Plasma-Jet and Their Application to Bottom-Gate Thin Film Transistor
28. Effects of Crystallization Conditions on the Electrical Characteristics of P-type Ge TFTs Formed by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation
29. Investigation on characteristics of millisecond solid phase crystallized silicon films annealed by atmospheric pressure DC arc discharge micro-thermal-plasma-jet and their application to bottom-gate thin film transistors fabrication
30. Heterozygous missense variant inTRPC6in a boy with rapidly progressive infantile nephrotic syndrome associated with diffuse mesangial sclerosis
31. Characteristics of Rapidly Solid Phase Crystallized Amorphous Silicon Films Formed by Micro-Thermal-Plasma Jet Irradiation
32. Large area annealing by magnetic field scanning of atmospheric pressure thermal plasma beam
33. Development of high-yield layer transfer process of single-crystalline silicon thin films on plastic substrate and its application to multi-functional device integration
34. Heterozygous missense variant in TRPC6 in a boy with rapidly progressive infantile nephrotic syndrome associated with diffuse mesangial sclerosis.
35. In situ monitoring to visualize temperature distribution in molten silicon region formed under atmospheric pressure thermal plasma jet irradiation
36. Single-Crystalline Si-CMOS Circuit Fabrication on Polyethylene Terephthalate Substrate by Meniscus Force-Mediated Layer Transfer
37. Abstract 319: Return of Spontaneous Circulation is Not Affected by Gastric Distension
38. Extremely high-power-density atmospheric-pressure thermal plasma jet generated by the nitrogen-boosted effect
39. The smallest de novo 20q11.2 microdeletion causing intellectual disability and dysmorphic features
40. Generation of ultra high-power thermal plasma jet and its application to crystallization of amorphous silicon films
41. High-temperature and high-speed oxidation of 4H-SiC by atmospheric pressure thermal plasma jet
42. Formation mechanism of drawing-induced peroxy radicals in pure silica optical fibers.
43. Formation mechanism of hydrogen-associated defect centers at silica optical fiber surfaces.
44. Defect structure and formation mechanism of drawing-induced absorption at 630 nm in silica optical fibers.
45. High Efficiency Activation of Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Annealing
46. (Invited) Atmospheric-Pressure Reactive Thermal Plasma Jet Technology for Decarbonization of Semiconductor Manufacturing.
47. Estimation of Phosphorus-Implanted 4H-SiC Layer Recrystallization by Electron-Back-Scattering Diffraction Pattern Analysis
48. High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC wafer
49. Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)
50. Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer
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