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Textbooks are major organizers of Arabic language instruction in most Arab countries (Faour, 2012). Textbooks approved by ministries of education have traditionally guided teaching of content knowledge, skills, and values to be taught at each grade level (Faour, 2012; Sabella, 2014; Taha-Thomure, 2008). This research is a foundation study into the use of Arabic Language Arts (ALA) standards in six schools in three countries in the Arabian Gulf region (Bahrain, Saudi Arabia, and United Arab Emirates). Fifty-eight teachers used the ALA standards adapted from the Ohio English Language Arts standards (Taha, 2017a) for at least one year. Results of the online survey indicated that 83.5% of teachers found the standards had a positive effect on their teaching, while 94.9% of teachers found that the standards helped them collaborate with each other in planning and finding suitable resources to use. This suggests that well-supported innovations can lead to teachers being aware of and using ALA to improve student learning and instruction. Results also highlight some of the challenges teachers faced to find the necessary Arab language resources that will help them implement a standards-based approach, in addition to the amount of time they needed to put into preparing for the lessons.

Mg(sub x)Zn(sub 1-x)O layers with different crystal structures due to different Mg contents are grown on a MgO/Al2O3(0001) template. The results images demonstrate that the epitaxial orientation of Mg(sub x)Zn(sub 1-x)O films with less than or equal to 0.65 on the MgO buffer layer initially is along [111] cubic direction and then changed to [0001] wurtzite direction.

Lambda-MnO2 films were grown by plasma-assisted molecular beam epitaxy and their structural properties and magnetic characteristics were investigated.

A new study investigates the optical and structural properties of distyrylbenzene derivative thin films.

The bulk structure of ZnSe films grown by molecular beam epitaxy GaAs substrates as well as the ZnSe/GaAs interface are analyzed using x-ray reflectivity. The focus of the analysis is the description of the interface composition and the quality of the surface and interface. By employing a distorted-wave Born approximation technique, the experimental x-ray reflectivity curves, measured at different wavelengths by synchrotron radiation, were simulated. The results are discussed.

In situ reflectance-difference spectroscopy, reflection high-energy electron diffraction and in-line Auger electron spectroscopy were used to study nitridation processes on GaAs(001) surfaces. Results reveal that a stable GaN layer is formed only when the As background pressure in the growth chamber is low enough. A substantial inhibition of nitridation ensues when the background pressure of As is high. Results further show that extensive nitridation leads to anisotropically rough surface morphology.

Characterization techniques such as in situ reflectance-difference spectroscopy, in-line Auger electron spectroscopy and reflection high-energy electron diffraction are used to study nitridation processes on gallium arsenide (GaAs)(001) surfaces that were exposed to N2 microwave plasma. Results show that high As background pressure effectively minimizes nitridation. On the other hand, low arsenic pressure results to the formation of a stable GaN layer.