Search

As-prepared nanostructured semiconductor materials are usually found in an amorphous form, which needs to be converted into a crystalline one for improving electronic properties and achieving enhanced application functionalities. The most utilized method is thermal annealing in a furnace, which however is time- and energy-consuming and not applicable for low-temperature melting substrates. An alternative is laser annealing, which can be carried out in a relatively short time and, additionally, offers the possibility of annealing localized areas. However, laser-annealed nanostructures are often distorted by melting, while preserving the as-prepared morphology is essential for practical applications. In this work, we analyze conditions of non-thermal ultrafast laser annealing of two kinds of nanostructures: anodic TiO2 nanotube layers and Ge/Si multilayer stacks. For both cases, regimes of crystallization have been found, which yield in preserving the initial nanomaterial morphologies without any melting signs. On these examples, ultrafast non-thermal mechanisms of structural material transformation are discussed, which can provide new opportunities for conversion of amorphous semiconductor nanomaterials into a desired crystalline form that is of high demand for existing and emerging technologies.

An overview of the latest developments of kilowatt-level diode pumped solid state lasers for advanced applications at the HiLASE Centre is presented. An overview of subcontracted and in-house-developed laser beamlines is presented. The aim of development is to build kW-class beamlines delivering picosecond pulses between 1- and 100-kHz repetition rates and high-energy nanosecond pulses at 10 Hz. The picosecond beamlines are based on Yb:YAG thin-disk amplifiers and chirped pulse amplification. The current status of the beamlines’ performance is reported. The advantages of zero-phonon line and pulsed pumping are demonstrated with respect to efficiency, thin disk temperature and beam quality. New diagnostics methods supporting the high average power lasers’ development, such as the high-resolution spectroscopy of Yb-doped materials, in situ thin disk deformation measurements, single-shot M2 measurement, realization of wavefront correction by a deformable mirror and the laser performance of a new mixed garnet ceramics, are described. The energetic, thermal and fluid-mechanical numerical modeling for the optimization of the multi-slab amplifiers is also described.

The development of kW-class diode-pumped picosecond laser sources emitting at various wavelengths started at the HiLASE Center four years ago. A 500-W Perla C thin-disk laser with a diffraction limited beam and repetition rate of 50–100 kHz, a frequency conversion to mid-infrared (mid-IR), and second to fifth harmonic frequencies was demonstrated. We present an updated review on the progress in the development of compact picosecond and femtosecond high average power radiation sources covering the ultraviolet (UV) to mid-IR spectral range at the HiLASE Center. We also report on thin-disk manufacturing by atomic diffusion bonding, which is a crucial technology for future high-power laser development.

In the last fifteen years stimulated Raman backscattering (SRBS) in plasma has been intensively elaborated as a promising tool on the way towards high intense lasers. There are several advantages of this technique in comparison to the world-wide used the CPA-Chirped Pulse Amplification technique for a laser amplification. We present the principle of the SRBS technique, the best results so far obtained in theory and experiment, and a possible SRBS project at the PALS Research Centre in Prague.