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CVD-Ru based reflow Cu scheme demonstrates robust gap fill performance at 10nm and 7nm node equivalent patterns. Potential EM and TDDB reliability concerns associated with Ru CMP are identified and successfully addressed by the application of new processes and materials. This suggests our proposed scheme can be one of promising candidates for 10nm node logic device and beyond.

We present BOX-less waveguide Ge PD for bulk-Si optical interface platform. Despite of defective crystalline of Si-core layer, it shows low dark current (350 nA), high responsivity (1.05 A/W), and high speed operation (25 Gb/s).

The integration of photonic devices with electronic circuit using CMOS-compatible process is presented in this paper. Issues and challenges in the design of process integration are discussed.

Residual stress of metal interconnects passivated by four different oxides was precisely measured by X-ray diffraction method, and the effect of this stress on electromigration (EM) lifetime of the Al-Cu lines was investigated. The EM lifetime was not a monotonous function of the residual stress; instead, it increased with the stress at low stress region, but decreased at the higher stress region. The stress of 200-250 MPa, which is the mid-value between compressive and tensile yield strength of the Al-Cu lines, provided the maximum EM lifetime. This result gives an experimental support to a theoretical calculation on the stress evolution due to EM and a guideline to maximize the EM lifetime for applications.

We present photonics technology based on a bulk-Si substrate for cost-sensitive dynamic random-access memory (DRAM) optical interface application. We summarize the progress on passive and active photonic devices using a local-crystallized Si waveguide fabricated by solid phase epitaxy or laser-induced epitaxial growth on bulk-Si substrate. The process of integration of a photonic integrated circuit (IC) with an electronic IC is demonstrated using a 65 nm DRAM periphery process on 300 mm wafers to prove the possibility of seamless integration with various complementary metal-oxide-semiconductor devices. Using the bulk-Si photonic devices, we show the feasibility of high-speed multidrop interface: the Mach–Zehnder interferometer modulators and commercial photodetectors are used to demonstrate four-drop link operation at 10 Gb/s, and the transceiver chips with photonic die and electronic die work for the DDR3 DRAM interface at 1.6 Gb/s under a 1∶4 multidrop configuration.

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This study reports the evaluation of an optical waveguide fabricated on a bulk-Si platform by using an epitaxially grown Si layer. The epitaxial growth of Si is obtained by the solid phase epitaxy (SPE) using a hot furnace annealing method. It is observed that an optical propagation loss of the waveguide decreases with increasing the epitaxially grown area in the waveguide. In this study, an epitaxial growth rate is greatly enhanced by an (100) growth orientation due to the lower atomic close packing density along the (100) orientation. The optical propagation loss is also improved with the (100) growth orientation because of the higher crystalline quality and full epitaxial growth of Si.

Based on the current-burst-model, it is possible to obtain macropores even in low-doped n-type silicon without illumination. In this study, HF-containing electrolytes were systematically modulated with strong oxidants. Etching in the dark with low current densities, macropores with depths up to 40 μm and pore-diameters between 150 nm and 500 nm were produced on low-doped n-type silicon where systematical macropore-formation without illumination has not been previously reported. In two cases, cylindrical pores with rather smooth walls were observed, and in several other cases, the noninterconnected pores were weakly-branched and thus had a distinct difference with classical heavily branched n-mesopores. By geometrical definition and morphological characterization, such pores could be termed "macropores" and thereby the current-burst-model was applied to interpret the mechanism concerning macropore formation.