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Kinks, point-like geometrical defects along dislocations, domain walls, and DNA, are stable and mobile, as solutions of a sine-Gordon wave equation. While they are widely investigated for crystal deformations and domain wall motions, electronic properties of individual kinks have received little attention. In this work, electronically and topologically distinct kinks are discovered along electronic domain walls in a correlated van der Waals insulator of 1$T$-TaS$_2$. Mobile kinks and antikinks are identified as trapped by pinning defects and imaged in scanning tunneling microscopy. Their atomic structures and in-gap electronic states are unveiled, which are mapped approximately into Su-Schrieffer-Heeger solitons. The twelve-fold degeneracy of the domain walls in the present system guarantees an extraordinarily large number of distinct kinks and antikinks to emerge. Such large degeneracy together with the robust geometrical nature may be useful for handling multilevel information in van der Waals materials architectures., 12 pages, 4 figures

Interplay of crystal symmetry, strong spin$-$orbit coupling (SOC), and many-body interactions in low dimensional materials provides a fertile ground for the discovery of unconventional electronic and magnetic properties and versatile functionalities. Two-dimensional (2D) allotropes of group 15 elements are appealing due to their structures and controllability over symmetries and topology under strong SOC. Here, we report the heteroepitaxial growth of a proximity-induced superconducting 2D square-lattice bismuth monolayer on superconducting Pb films. The square lattice of monolayer bismuth films in a $C_4$ symmetry together with a stripey moir\'e structure is clearly resolved by our scanning tunneling microscopy and its atomic structure is revealed by density functional theory (DFT) calculations. A Rashba-type spin-split Dirac band is predicted by DFT calculations to exist at the Fermi level and becomes superconducting through the proximity effect from the Pb substrate. We suggest the possibility of a topological superconducting state in this system with magnetic dopants/field. This work introduces an intriguing material platform with 2D Dirac bands, strong SOC, topological superconductivity, and the moir\'e superstructure., Comment: 21 pages, 4 figures

Localized modes in one dimensional topological systems, such as Majonara modes in topological superconductors, are promising platforms for robust information processing. In one dimensional topological insulators, mobile topological solitons are expected but have not been fully realized yet. We discover fractionalized phase defects moving along trimer silicon atomic chains formed along step edges of a vicinal silicon surface. Tunneling microscopy identifies local defects with phase shifts of 2{\pi}/3 and 4{\pi}/3 with their electronic states within the band gap and with their motions activated above 100 K. Theoretical calculations reveal the topological soliton origin of the phase defects with fractional charges of {\pm}2e/3 and {\pm}4e/3. An individual soliton can be created and annihilated at a desired location by current pulse from the probe tip. Mobile and manipulatable topological solitons discovered here provide a new platform of robustly-protected informatics with extraordinary functionalities., Comment: 18 pages, 4 figures

Efficient magnetic control of electronic conduction is at the heart of spintronic functionality for memory and logic applications1,2. Magnets with topological band crossings serve as a good material platform for such control, because their topological band degeneracy can be readily tuned by spin configurations, dramatically modulating electronic conduction3–10. Here we propose that the topological nodal-line degeneracy of spin-polarized bands in magnetic semiconductors induces an extremely large angular response of magnetotransport. Taking a layered ferrimagnet, Mn3Si2Te6, and its derived compounds as a model system, we show that the topological band degeneracy, driven by chiral molecular orbital states, is lifted depending on spin orientation, which leads to a metal–insulator transition in the same ferrimagnetic phase. The resulting variation of angular magnetoresistance with rotating magnetization exceeds a trillion per cent per radian, which we call colossal angular magnetoresistance. Our findings demonstrate that magnetic nodal-line semiconductors are a promising platform for realizing extremely sensitive spin- and orbital-dependent functionalities. A study reports a colossal angular magnetoresistance in the topological magnet Mn3Si2Te6, resulting from a metal-to-insulator transition caused by controlled lifting of a topological band degeneracy, and discusses the key parameters involved.

Nonvanishing Berry curvature dipole (BCD) and persistent spin texture (PST) are intriguing physical manifestations of electronic states in noncentrosymmetric 2D materials. The former induces a nonlinear Hall conductivity while the latter offers a coherent spin current. Based on density-functional-theory (DFT) calculations, we demonstrate the coexistence of both phenomena in a Bi(110) monolayer with a distorted phosphorene structure. Both effects are concurrently enhanced due to the strong spin-orbit coupling of Bi while the structural distortion creates internal in-plane ferroelectricity with inversion asymmetry. We further succeed in fabricating a Bi(110) monolayer in the desired phosphorene structure on the NbSe2 substrate. Detailed atomic and electronic structures of the Bi(110)/NbSe2 heterostructure are characterized by scanning tunneling microscopy/spectroscopy and angle-resolved-photoemission spectroscopy. These results are consistent with DFT calculations which indicate the large BCD and PST are retained. Our results suggest the Bi(110)/NbSe2 heterostructure as a promising platform to exploit nonlinear Hall and coherent spin transport properties together.

Although a few physical methods were demonstrated for domain wall engineering in various electronic or ferroic materials with broken discrete symmetries, the direct control over the electronic properties of individual domain walls has been extremely limited. Here, we introduce a chemical method to tune the electronic property of domain walls in 1T tantalum disulfide. By using scanning tunneling microscopy and spectroscopy techniques, we find that indium adatoms on 1T-TaS2 have distinct behaviors on the domains with different bulk terminations. Moreover, the adatoms form their own chains along the edges of neighboring domains. The density functional theory calculations reveal a 1D Mott insulating state on a modified domain wall, resulting from the degenerated spin-polarized bands with electron doping from adsorbates and charge transfer from neighboring domains. This work suggests that chemical decoration by adsorbates can be widely used to tune local electronic states of domain walls and various 2D materials.

Excitons, quasiparticles of electrons and holes bound by Coulombic attraction, are created transiently by light and play an important role in optoelectronics, photovoltaics and photosynthesis. They are also predicted to form spontaneously in a small-gap semiconductor or a semimetal, leading to a Bose–Einstein condensate at low temperature, but there has not been any direct evidence of this effect so far. Here we detect the photoemission signal from spontaneously formed excitons in a debated excitonic insulator candidate, Ta2NiSe5. Our symmetry-selective angle-resolved photoemission spectroscopy reveals a characteristic excitonic feature above the transition temperature, which provides detailed properties of excitons, such as the anisotropic Bohr radius. The present result provides evidence for so-called preformed excitons and guarantees the excitonic insulator nature of Ta2NiSe5 at low temperature. Excitons have been predicted to form spontaneously—without external excitation—in some materials. Low-temperature ARPES measurements on Ta2NiSe5 now provide evidence for such an excitonic insulator and for so-called preformed excitons.

Two-dimensional semiconductors have a range of electronic and optical properties that can be used in the development of advanced electronic devices. However, unlike conventional silicon semiconductors, simple doping methods to monolithically assemble n- and p-type channels on a single two-dimensional semiconductor are lacking, which makes the fabrication of integrated circuitry challenging. Here we report the reversible photo-induced doping of few-layer molybdenum ditelluride and tungsten diselenide, where the channel polarity can be reconfigured from n-type to p-type, and vice versa, with laser light at different frequencies. This reconfigurable doping is attributed to selective light–lattice interactions, such as the formation of tellurium self-interstitial defects under ultraviolet illumination and the incorporation of substitutional oxygen in tellurium and molybdenum vacancies under visible illumination. Using this approach, we create a complementary metal–oxide–semiconductor (CMOS) device on a single channel, where the circuit functions can be dynamically reset from a CMOS inverter to a CMOS switch using pulses of different light frequencies. Few-layer molybdenum ditelluride and tungsten diselenide field-effect transistors can be reversibly doped with different carrier types and concentrations using pulses of ultraviolet and visible light, allowing reconfigurable complementary metal–oxide–semiconductor circuits to be created.

We fabricate artificial molecules composed of heavy atom lead on a van der Waals crystal. Pb atoms templated on a honeycomb charge-order superstructure of IrTe2 form clusters ranging from dimers to heptamers including benzene-shaped ring hexamers. Tunneling spectroscopy and electronic structure calculations reveal the formation of unusual relativistic molecular orbitals within the clusters. The spin–orbit coupling is essential both in forming such Dirac electronic states and stabilizing the artificial molecules by reducing the adatom–substrate interaction. Lead atoms are found to be ideally suited for a maximized relativistic effect. This work initiates the use of novel two-dimensional orderings to guide the fabrication of artificial molecules of unprecedented properties., Artificial molecules supported on templated surfaces attract enormous interest due to their tunable electronic properties. Here the authors use STM experiments and DFT calculations to show the formation of Pb artificial clusters on a IrTe2 honeycomb template that are maximally stabilized by relativistic effects.

Self-assembled rare-earth (RE) silicide nanowires (NWs) on semiconductor surfaces are considered as good candidates for creating and investigating one-dimensional electron systems because of their exceptionally anisotropic growth behavior and metallic property. While detailed atomic structures are essential to understand electronic properties of these NWs, there have been only few successful observations of atomic structures with microscopy and reliable structure models are lacking. Here, we reinvestigate gadolinium silicide NWs with high resolution scanning tunneling microscopy (STM). We observe several different structures of Gd silicide NWs depending systematically on their widths, which consist of two distinct structural elements along the wires. The structure of a wide wire can be understood from that of a two dimensional silicide. Based on these STM observations, we propose new structure models of Gd silicide NWs.

Efficient magnetic control of electronic conduction is at the heart of spintronic functionality for memory and logic applications

In an electronic system with various interactions intertwined, revealing the origin of its many-body ground state is challenging and a direct experimental way to verify the correlated nature of an insulator has been lacking. Here we demonstrate a way to unambiguously distinguish a paradigmatic correlated insulator, a Mott insulator, from a trivial band insulator based on their distinct chemical behavior for a surface adsorbate using 1T-TaS2, which has been debated between a spin-frustrated Mott insulator or a spin-singlet trivial insulator. We start from the observation of different sizes of spectral gaps on different surface terminations and show that potassium adatoms on these two surface layers behave in totally different ways. This can be straightforwardly understood from distinct properties of a Mott and a band insulators due to the fundamental difference of a half and a full-filled orbital involved respectively. This work not only solves an outstanding problem in this particularly interesting material but also provides a simple touchstone to identify the correlated ground state of electrons experimentally., Comment: 6 pages, 4 figures

Effects of electron many-body interactions amplify in an electronic system with a narrow bandwidth opening a way to exotic physics. A narrow band in a two-dimensional (2D) honeycomb lattice is particularly intriguing as combined with Dirac bands and topological properties but the material realization of a strongly interacting honeycomb lattice described by the Kane-Mele-Hubbard model has not been identified. Here we report a novel approach to realize a 2D honeycomb-lattice narrow-band system with strongly interacting 5$d$ electrons. We engineer a well-known triangular lattice 2D Mott insulator 1T-TaS$_2$ into a honeycomb lattice utilizing an adsorbate superstructure. Potassium (K) adatoms at an optimum coverage deplete one-third of the unpaired $d$ electrons and the remaining electrons form a honeycomb lattice with a very small hopping. Ab initio calculations show extremely narrow Z$_2$ topological bands mimicking the Kane-Mele model. Electron spectroscopy detects an order of magnitude bigger charge gap confirming the substantial electron correlation as confirmed by dynamical mean field theory. It could be the first artificial Mott insulator with a finite spin Chern number., 6 pages, 3 figures

We investigate electronic states of Se-substituted 1T-TaS2 by scanning tunneling microscopy/spectroscopy (STM/STS), where superconductivity emerges from the unique Mott-charge-density-wave (Mott-CDW) state. Spatially resolved STS measurements reveal that a pseudogap replaces the Mott gap with the CDW gaps intact. The pseudogap has little correlation with the unit-cell-to-unit-cell variation in the local Se concentration but appears globally. The correlation length of the local density of states (LDOS) is substantially enhanced at the Fermi energy and decays rapidly at high energies. Furthermore, the statistical analysis of LDOS indicates the weak multifractal behavior of the wave functions. These findings suggest a correlated metallic state induced by disorder and provide a new insight into the emerging superconductivity in two-dimensional materials.

Defects have been known to substantially affect quantum states of materials including charge density wave (CDW). However, the microscopic mechanism of the influence of defects is often elusive due partly to the lack of atomic scale characterization of defects themselves. We investigate native defects of a prototypical CDW material 2H-NbSe_{2} and their microscopic interaction with CDW. Three prevailing types of atomic scale defects are classified by scanning tunneling microscope, and their atomic structures are identified by density functional theory calculations as Se vacancies and Nb intercalants. Above the transition temperature, two distinct CDW structures are found to be induced selectively by different types of defects. This intriguing phenomenon is explained by competing CDW ground states and local lattice strain fields induced by defects, providing a clear microscopic mechanism of the defect-CDW interaction.

Discovery of two dimensional (2D) magnets, showing intrinsic ferromagnetic (FM) or antiferromagnetic (AFM) orders, has accelerated development of novel 2D spintronics, in which all the key components are made of van der Waals (vdW) materials and their heterostructures. High-performing and energy-efficient spin functionalities have been proposed, often relying on current-driven manipulation and detection of the spin states. In this regard, metallic vdW magnets are expected to have several advantages over the widely-studied insulating counterparts, but have not been much explored due to the lack of suitable materials. Here, we report tunable itinerant ferro- and antiferromagnetism in Co-doped Fe4GeTe2 utilizing the vdW interlayer coupling, extremely sensitive to the material composition. This leads to high TN antiferromagnetism of TN ~ 226 K in a bulk and ~210 K in 8 nm-thick nanoflakes, together with tunable magnetic anisotropy. The resulting spin configurations and orientations are sensitively controlled by doping, magnetic field, and thickness, which are effectively read out by electrical conduction. These findings manifest strong merits of metallic vdW magnets as an active component of vdW spintronic applications., Metallic van der Waals magnets have considerable technological promise, due to their ability to be strongly coupled with electronic currents and integrated in two dimensional heterostructures. Here, Seo et al. demonstrate highly tunable itinerant antiferromagnetism in a van der Waals magnet.

Defects have been known to substantially affect quantum states of materials including charge density wave (CDW). However, the microscopic mechanism of the influence of defects is often elusive due partly to the lack of atomic scale characterization of defects themselves. We investigate native defects of a prototypical CDW material 2H-NbSe_{2} and their microscopic interaction with CDW. Three prevailing types of atomic scale defects are classified by scanning tunneling microscope, and their atomic structures are identified by density functional theory calculations as Se vacancies and Nb intercalants. Above the transition temperature, two distinct CDW structures are found to be induced selectively by different types of defects. This intriguing phenomenon is explained by competing CDW ground states and local lattice strain fields induced by defects, providing a clear microscopic mechanism of the defect-CDW interaction.

A theoretically designed van der Waals ferromagnet Fe4GeTe2 is synthesized and shows the nearly room temperature ferromagnetism., In spintronics, two-dimensional van der Waals crystals constitute a most promising material class for long-distance spin transport or effective spin manipulation at room temperature. To realize all-vdW-material–based spintronic devices, however, vdW materials with itinerant ferromagnetism at room temperature are needed for spin current generation and thereby serve as an effective spin source. We report theoretical design and experimental realization of a iron-based vdW material, Fe4GeTe2, showing a nearly room temperature ferromagnetic order, together with a large magnetization and high conductivity. These properties are well retained even in cleaved crystals down to seven layers, with notable improvement in perpendicular magnetic anisotropy. Our findings highlight Fe4GeTe2 and its nanometer-thick crystals as a promising candidate for spin source operation at nearly room temperature and hold promise to further increase Tc in vdW ferromagnets by theory-guided material discovery.

Superconductivity in the vicinity of a competing electronic order often manifests itself with a superconducting dome, centered at a presumed quantum critical point in the phase diagram. This common feature, found in many unconventional superconductors, has supported a prevalent scenario in which fluctuations or partial melting of a parent order are essential for inducing or enhancing superconductivity. Here we present a contrary example, found in IrTe2 nanoflakes of which the superconducting dome is identified well inside the parent stripe charge ordering phase in the thickness-dependent phase diagram. The coexisting stripe charge order in IrTe2 nanoflakes significantly increases the out-of-plane coherence length and the coupling strength of superconductivity, in contrast to the doped bulk IrTe2. These findings clarify that the inherent instabilities of the parent stripe phase are sufficient to induce superconductivity in IrTe2 without its complete or partial melting. Our study highlights the thickness control as an effective means to unveil intrinsic phase diagrams of correlated van der Waals materials., Superconductivity often appears due to suppression of competing electronic orders. Here, the authors present a contrary example showing a superconducting dome inside the parent phase with a stripe charge order in IrTe2 nanoflakes and identify their unusual superconducting properties.

We investigate the effects of native Si adatoms on structural and electronic properties of the Si(111)5 × 2-Au surface, a representative one-dimensional metal-chain system, by means of scanning tunneling microscopy (STM) and density functional theory (DFT) calculations. High-resolution STM images of relatively long adatom-free chain segments evidence directly the inherent ×2 reconstruction, which is the essential part of a recently proposed structural model based on a renewed Au coverage of 0.7 monolayer. On the other hand, STM images for chain segments of different lengths reveal that the structural distortion induced by Si adatoms is confined in neighboring unit cells, in good agreement with DFT calculations based on that model. Si adatoms greatly affect the metallic bands of Au chains, one of which becomes fully occupied and represents a tightly confined electronic state to the distortion around Si adatoms, potentially forming short insulating segments within metallic chains. This finding provides an atomic-scale understanding of the observed gradual metal-insulator transition and atomic-scale phase separation induced by Si adatoms.

The development of complex electronics based on two-dimensional (2D) materials will require the integration of a large number of 2D devices into circuits. However, a practical method of assembling such devices into integrated circuits remains elusive. Here we show that a scanning visible light probe can be used to directly write electrical circuitry onto the 2D semiconductor molybdenum ditelluride (2H-MoTe2). Laser light illumination over metal patterns deposited onto 2D channels of 2H-MoTe2 can convert the channels from an n-type semiconductor to a p-type semiconductor, by creating adatom–vacancy clusters in the host lattice. With this process, diffusive doping profiles can be controlled at the submicrometre scale and doping concentrations can be tuned, allowing the channel sheet resistance to be varied over four orders of magnitudes. Our doping method can be used to assemble both n- and p-doped channels within the same atomic plane, which allows us to fabricate 2D device arrays of n–p–n (p–n–p) bipolar junction transistor amplifiers and radial p–n photovoltaic cells. A laser can be used to locally dope two-dimensional molybdenum ditelluride channels, allowing both n- and p-doped channels to be assembled within the same atomic plane and for device arrays of n–p–n bipolar junction transistor amplifiers and radial p–n photovoltaic cells to be fabricated.

Crystal polymorphism selectively stabilizes the electronic phase of atomically thin transition-metal dichalcogenides (TMDCs) as metallic or semiconducting, suggesting the potential to integrate these polymorphs as circuit components in two-dimensional electronic circuitry. Developing a selective and sequential growth strategy for such two-dimensional polymorphs in the vapour phase is a critical step in this endeavour. Here, we report on the polymorphic integration of distinct metallic (1T′) and semiconducting (2H) MoTe2 crystals within the same atomic planes by heteroepitaxy. The realized polymorphic coplanar contact is atomically coherent, and its barrier potential is spatially tight-confined over a length of only a few nanometres, with a lowest contact barrier height of ∼25 meV. We also demonstrate the generality of our synthetic integration approach for other TMDC polymorph films with large areas. Sequential heteroepitaxy of transition-metal dichalcogenide polymorphs with different electronic properties is used to build coplanar ultrathin circuitry with atomic-scale precision.

Topological insulators (TI’s) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use, these materials need to be fabricated into devices whose basic units are often p–n junctions. Interesting electronic properties of a ‘topological’ p–n junction were proposed theoretically such as the junction electronic state and the spin rectification. However, the fabrication of a lateral topological p–n junction has been challenging because of materials, process, and fundamental reasons. Here, we demonstrate an innovative approach to realize a p–n junction of topological surface states (TSS’s) of a three-dimensional (3D) topological insulator (TI) with an atomically abrupt interface. When a ultrathin Sb film is grown on a 3D TI of Bi2Se3 with a typical n-type TSS, the surface develops a strongly p-type TSS through the substantial hybridization between the 2D Sb film and ...

We demonstrate that the excitonic insulator ground state of ${\mathrm{Ta}}_{2}{\mathrm{NiSe}}_{5}$ can be electrically controlled by electropositive surface adsorbates. Our studies utilizing angle-resolved photoemission spectroscopy reveal intriguing wave-vector-dependent deformations of the characteristic flattop valence band of this material upon potassium adsorption. The observed band deformation indicates a reduction of the single-particle band gap due to the Stark effect near the surface. The present study provides the foundation for the electrical tuning of the many-body quantum states in excitonic insulators.

We propose a new principle to realize flatbands which are robust in real materials, based on a network superstructure of one-dimensional segments. This mechanism is naturally realized in the nearly commensurate charge-density wave of 1T-TaS${}_2$ with the honeycomb network of conducting domain walls, and the resulting flatband can naturally explain the enhanced superconductivity. We also show that corner states, which are a hallmark of the higher-order topological insulators, appear in the network superstructure., 7+16 pages, 2+14 figures, Accepted version to PRL

When two periodic potentials compete in materials, one may adopt the other, which straightforwardly generates topological defects. Of particular interest are domain walls in charge-, dipole-, and spin-ordered systems, which govern macroscopic properties and important functionality. However, detailed atomic and electronic structures of domain walls have often been uncertain and the microscopic mechanism of their functionality has been elusive. Here, we clarify the complete atomic and electronic structures of the domain wall network, a honeycomb network connected by Z$_{3}$ vortices, in the nearly commensurate Mott charge-density wave (CDW) phase of 1T-TaS$_{2}$. Scanning tunneling microscopy resolves characteristic charge orders within domain walls and their vortices. Density functional theory calculations disclose their unique atomic relaxations and the metallic in-gap states confined tightly therein. A generic theory is constructed, which connects this emergent honeycomb network of conducting electrons to the enhanced superconductivity., Comment: 5 figures

We investigated the atomic scale electronic phase separation emerging from a quasi-1D charge-density-wave (CDW) state of the In atomic wire array on a Si(111) surface. Spatial variations of the CDW gap and amplitude are quantified for various interfaces of metallic and insulating CDW domains by scanning tunneling microscopy and spectroscopy (STS). The strong anisotropy in the metal-insulator junctions is revealed with an order of magnitude difference in the interwire and intrawire junction lengths of 0.4 and 7 nm, respectively. The intrawire junction length is reduced dramatically by an atomic scale impurity, indicating the tunability of the metal-insulator junction in an atomic scale. Density functional theory calculations disclose the dynamical nature of the intrawire junction formation and tunability.

Excitonic insulator (EI) was proposed in the 1960s as a distinct insulating state originating from pure electronic interaction, but its material realization has been elusive with extremely few material candidates and with only limited evidence such as anomalies in transport properties, band dispersions, or optical transitions. We investigate the real-space electronic states of the low-temperature phase in ${\mathrm{Ta}}_{2}{\mathrm{NiSe}}_{5}$ with atomic resolution to clearly identify the quasiparticle energy gap together with the strong electron-hole band renormalization using scanning tunneling microscopy and spectroscopy (STS). These results are in good agreement with the EI transition scenario in ${\mathrm{Ta}}_{2}{\mathrm{NiSe}}_{5}$. Our spatially resolved STS data and theoretical calculations reveal further the orbital inversion at band edges, which indicates the exciton condensation close to the Bardeen-Cooper-Schrieffer regime.

We demonstrate that the excitonic insulator ground state of Ta_{2}NiSe_{5} can be electrically controlled by electropositive surface adsorbates. Our studies utilizing angle-resolved photoemission spectroscopy reveal intriguing wave-vector-dependent deformations of the characteristic flattop valence band of this material upon potassium adsorption. The observed band deformation indicates a reduction of the single-particle band gap due to the Stark effect near the surface. The present study provides the foundation for the electrical tuning of the many-body quantum states in excitonic insulators.

Despite decades of studies of the charge density wave (CDW) of 2H-NbSe_{2}, the origin of its incommensurate CDW ground state has not been understood. We discover that the CDW of 2H-NbSe_{2} is composed of two different, energetically competing, structures. The lateral heterostructures of two CDWs are entangled as topological excitations, which give rise to a CDW phase shift and the incommensuration without a conventional domain wall. A partially melted network of topological excitations and their vertices explain an unusual landscape of domains. The unconventional topological role of competing phases disclosed here can be widely applied to various incommensuration or phase coexistence phenomena in materials.

A switch to projects led by independent principal investigators would build on the success of the nation’s centralized research agenda, urges Han Woong Yeom. A switch to projects led by independent principal investigators would build on the success of the nation’s centralized research agenda.