38 results on '"Han, Kijeong"'
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2. The BiDFET Device and Its Impact on Converters
3. Switching Characteristics of a 1.2 kV, 50 mΩ SiC Monolithic Bidirectional Field Effect Transistor (BiDFET) with Integrated JBS Diodes
4. 650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types
5. Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness
6. 2.3-kV, 5-A 4H-SiC Ti and Ni JBS Rectifiers manufactured in Commercial Foundry: Impact of Implant Lateral Straggle
7. Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes
8. Switching and Short-Circuit Performance of 27 nm Gate Oxide, 650 V SiC Planar-Gate MOSFETs with 10 to 15 V Gate Drive Voltage
9. Packaging Development for a 1200V SiC BiDFET Switch Using Highly Thermally Conductive Organic Epoxy Laminate
10. Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies
11. 2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies
12. 1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor
13. 2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
14. Corrections to “600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V” [Nov 19 1792-1795]
15. 600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V
16. Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC MOSFETs with Various Channel Lengths
17. Impact of Gate Oxide Thickness on Switching and Short Circuit Performance of 1200 V 4H-SiC Inversion-channel MOSFETs
18. Impact of Channel Length on Characteristics of 600V 4H-SiC Inversion-channel Planar MOSFETs
19. Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs
20. Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET
21. Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs
22. Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results
23. Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs
24. Comparison of New Octagonal Cell Topology for 1.2 kV 4H-SiC JBSFETs with Linear and Hexagonal Topologies: Analysis and Experimental Results
25. New Dynamic Power MOSFET Model to Determine Maximum Device Operating Frequency
26. Stability of 4H-SiC JBS Diodes Under Repetitive Avalanche Stress
27. The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit
28. Analysis of 1.2 kV 4H-SiC Trench-Gate MOSFETs with Thick Trench Bottom Oxide
29. New Short Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETs
30. Operation of 1.2-kV 4H-SiC Accumulation and Inversion Channel Split-Gate (SG) MOSFETs at Elevated Temperatures
31. Accumulation channel vs. inversion channel 1.2 kV rated 4H-SiC buffered-gate (BG) MOSFETs: Analysis and experimental results
32. A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results
33. Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation
34. Applications and characterization of four quadrant GaN switch
35. Optimization of the JFET region of 1.2kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM)
36. A comparative study of channel designs for SiC MOSFETs: Accumulation mode channel vs. inversion mode channel
37. Fabrication of CMOS-compatible optical filter arrays using gray-scale lithography
38. Design, Analysis, and Optimization of 1.2 kV 4H-SiC Planar-Gate Power MOSFETs for Improved High Frequency Switching.
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