Search

Abstract Silicon carbide (SiC) is emerging as a promising material platform for quantum photonic integrated circuits (QPICs). A quantum light source is one of the fundamental building blocks for QPICs. A high-performance quantum light source from SiC platform will facilitate SiC’s infiltration into QPICs.

In recent years, several new applications of SiC (both 4H and 3C polytypes) have been proposed in different papers. In this review, several of these emerging applications have been reported to show the development status, the main problems to be solved and the outlooks for these new devices. The use of SiC for high temperature applications in space, high temperature CMOS, high radiation hard detectors, new optical devices, high frequency MEMS, new devices with integrated 2D materials and biosensors have been extensively reviewed in this paper. The development of these new applications, at least for the 4H-SiC ones, has been favored by the strong improvement in SiC technology and in the material quality and price, due to the increasing market for power devices. However, at the same time, these new applications need the development of new processes and the improvement of material properties (high temperature packages, channel mobility and threshold voltage instability improvement, thick epitaxial layers, low defects, long carrier lifetime, low epitaxial doping). Instead, in the case of 3C-SiC applications, several new projects have developed material processes to obtain more performing MEMS, photonics and biomedical devices. Despite the good performance of these devices and the potential market, the further development of the material and of the specific processes and the lack of several SiC foundries for these applications are limiting further development in these fields.

Euryale ferox Salisb. (prickly water lily) is the only extent of the genus Euryale that has been widely distributed in China, India, Korea, and Japan. The seeds of E. ferox (EFS) have been categorized as superior food for 2000 years in China, based on their abundant nutrients including polysaccharides, polyphenols, sesquineolignans, tocopherols, cyclic dipeptides, glucosylsterols, cerebrosides, and triterpenoids. These constituents exert multiple pharmacological effects, such as antioxidant, hypoglycemic, cardioprotective, antibacterial, anticancer, antidepression, and hepatoprotective properties. There are very few summarized reports on E. ferox, albeit with its high nutritional value and beneficial activities. Therefore, we collected the reported literature (since 1980), medical classics, database, and pharmacopeia of E. ferox, and summarized the botanical classification, traditional uses, phytochemicals, and pharmacological effects of E. ferox, which will provide new insights for further research and development of EFS-derived functional products.

Silicon carbide (SiC) has become a promising optical material for quantum photonics and nonlinear photonics during the past decade. In this work, we propose two methods to improve the 4H-SiC thin film quality for SiC integrated photonic chips. Firstly, we develop a wet-oxidation-assisted chemical mechanical polishing (CMP) process for 4H-SiC, which can significantly decrease the surface roughness from 3.67 nm to 0.15 nm, thus mitigating the light scattering loss. Secondly, we find that the thermal annealing of the 4H-SiC devices at 1300 °C can help to decrease the material absorption loss. We experimentally demonstrate that the wet-oxidation-assisted CMP and the high-temperature annealing can effectively increase the intrinsic quality factor of the 4H-SiC optical microring resonators.

Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper will start with the introduction of exceptional optical properties of silicon carbide. Then, a key structure, i.e., silicon carbide on insulator stack (SiCOI), is discussed which lays solid fundament for tight light confinement and strong light-SiC interaction in high quality factor and low volume optical cavities. As examples, microring resonator, microdisk and photonic crystal cavities are summarized in terms of quality (Q) factor, volume and polytypes. A main challenge for SiC photonic application is complementary metal-oxide-semiconductor (CMOS) compatibility and low-loss material growth. The state-of-the-art SiC with different polytypes and growth methods are reviewed and a roadmap for the loss reduction is predicted for photonic applications. Combining the fact that SiC possesses many different color centers with the SiCOI platform, SiC is also deemed to be a very competitive platform for future quantum photonic integrated circuit applications. Its perspectives and potential impacts are included at the end of this review paper.

4H‐silicon carbide (SiC) integrated platforms have shown great potential in quantum and nonlinear photonics. However, the thermal properties of 4H‐SiC waveguides are still unknown, even though thermo‐optic effects can play an important role in fundamental measurements and practical applications. Herein, the thermo‐optic effects in a 4H‐SiC microring resonator are comprehensively studied, by means of both temperature tuning and self‐heating. The thermo‐optic coefficient and the ratio between the thermal absorption and the thermal diffusion of 4H‐SiC are quantitatively measured to be 4.21×10−5 K−1 and 14.9 K W−1, respectively. Considering the acquired thermal properties, Kerr‐nonlinearity‐based dual‐pump optical parametric oscillation (OPO) is experimentally achieved, and thus, it is demonstrated that broadband solitons can feasibly be generated through thermal tuning of 4H‐SiC‐on‐insulator (SiCOI) microring resonators.

We report four-wave mixing with different polarization and spatial modes in a single 4H-silicon carbide photonic device. Our device shows great potential to perform high-dimensional multiplexing for optical communication and high-dimensional entanglement in quantum networks. We use a polarization-insensitive grating coupler and a multimode microring resonator that supports three polarization and spatial mode resonances. Finally, we show the polarization dependence of the third-order nonlinearity of 4H-silicon carbide. The measured nonlinear refractive index of the light polarized along the extraordinary axis, which is n2,TM = (13.1 ± 0.7) × 10−19 m2/W, is twice as large as that of the light polarized along the ordinary plane, n2,TE = (7.0 ± 0.3) × 10−19 m2/W, indicating that the extraordinary polarization is more efficient for nonlinear experiments in the 4H-silicon carbide integrated platforms as compared to the ordinary polarization.

We propose a silicon strip waveguide structure with alumina thin-film coating in-between the core and the cladding for group-velocity dispersion tailoring. By carefully designing the core dimension and the coating thickness, a spectrally-flattened near-zero anomalous group-velocity dispersion within the telecom spectral range is obtained, which is predicted to significantly broaden the bandwidth of four-wave mixing. We validate this by characterizing the wavelength conversion in a waveguide sample by atomic layer deposition technology, which to our best knowledge is the first experimental demonstration of the proposed structure. Due to the alumina thin-film coating, the wavelength conversion bandwidth reaches $58\,\mathrm{nm}$, an increase by a factor of 1.3 compared to the corresponding structure without coating. This method can also be applied to other material platforms and applications requiring accurate group-velocity dispersion control.

In this paper, an efficient domain decomposition (DD) technique is originally introduced into the unconditionally stable Crank-Nicolson finite-difference time-domain (CN-FDTD) method for analyzing the extraordinary optical transmission (EOT) phenomenon of periodic metallic gratings. Being caused by the evanescent waves propagating along the metal-dielectric interface in the visible and near infrared regions, the dispersion of the considered metal in this case is expressed by the Drude model and solved with a generalized auxiliary differential equation (ADE) technique. The periodic boundary condition is applied to the two-dimensional periodic metallic grating structures due to their periodicity. Then, the standard unsplit-field perfectly matched layer is derived as the absorbing boundary condition for CN-FDTD based on the ADE concept. In DD structures, the whole computational domain is divided into several subdomains to reduce the matrix size and save calculating time. Furthermore, the reverse Cuthill-Mckee scheme for the lower-upper decomposition is applied to the subdomain matrices individually to improve the efficiency of DD-CN-FDTD. Finally, two numerical examples are calculated and the physical mechanism of the EOT phenomenon is investigated. The results from the proposed method demonstrate its accuracy and efficiency for the nanostructures.

In this paper, the Newmark-Beta algorithm is introduced into the finite-difference time-domain (FDTD) method in dispersion media, resulting in an unconditionally stable method for periodic metallic grating analysis. The proposed method eliminates the Courant-Friedrich-Levy constraint and improves the simulation efficiency for multiscale problems. The dispersion of the metal, which is caused by the evanescent waves propagating along the interface between the metal and dielectric materials in the visible and near-infrared regions, is solved with a generalized auxiliary differential equation (ADE) technique. The extraordinary optical transmission through a periodic metallic grating with different number and different size of the perpendicular bump is also investigated. Compared with the traditional ADE-FDTD method and ADE alternating-direction-implicit FDTD method, the results from the proposed method show its accuracy and efficiency.

In this paper, a frequency-dependent locally one-dimensional finite-difference time-domain (LOD-FDTD) method is developed for the extraordinary optical transmission (EOT) analysis of periodic metallic gratings. The dispersion of the metal, caused by the evanescent waves propagating along the interface between the metal and the dielectric materials in the visible and near infrared regions, is expressed by the Drude model and solved with a generalized auxiliary differential equation (ADE) technique. With efficient preprocessing for the lower-upper (LU) decomposition in ADE-LOD-FDTD, the periodic boundary condition (PBC) is applied to the 2-D metallic grating structure. Two numerical examples with different subwavelength slits are calculated, and the mechanism of the EOT phenomenon is investigated. Compared with the standard ADE-FDTD method, the results from the proposed method show its good efficiency for the nanostructures.

This study investigated the fabrication of porous fluorescent SiC using a constant voltage-controlled anodic oxidation process. The application of a high, constant voltage resulted in a spatial distinction between the porous structures formed inside the fluorescent SiC substrates, due to the different etching rates at the terrace and the large step bunches. Large, dendritic porous structures were formed as the etching process continued and the porous layer thickened. Under the conditions of low hydrofluoric acid (HF) concentration, the uniformity of the dendritic porous structures through the entire porous layer was considerably improved compared with the conditions of high HF concentration. The resulting large uniform structure offered a sizable surface area, and promoted the penetration of atomic layer-deposited (ALD) Al2O3 films (ALD–Al2O3). The emission intensity in the porous fluorescent SiC was confirmed via photoluminescence (PL) measurements to be significantly improved by a factor of 128 after ALD passivation. With surface passivation, there was a clear blueshift in the emission wavelength, owing to the effective suppression of the non-radiative recombination rate in the porous structures. Furthermore, the spatial uniformity of emitted light was examined via PL mapping using three different excitation lasers, which resulted in the observation of uniform and distinctive emissions in the fluorescent SiC bulk and porous areas.

miRNAs are a class of noncoding RNAs important in posttranscriptional repressors and involved in the regulation of almost every biological process by base paring with target genes through sequence in their seed regions. Genetic variations in the seed regions have vital effects on gene expression, phenotypic variation, and disease susceptibility in humans. The distribution pattern of genetic variation in miRNA seed regions might be related to miRNA function and is worth paying more attention to. We here employed computational analyses to explore the clustering pattern and functional effect of SNPs in human miRNA seed regions. A total of 1879 SNPs were mapped to 1226 human miRNA seed regions. We found that miRNAs with SNPs in their seed region are significantly enriched in miRNA clusters. We also found that SNPs in clustered miRNA seed regions have a lower functional effect than have SNPs in nonclustered miRNA seed regions. Additionally, we found that clustered miRNAs with SNPs in seed regions are involved in more pathways. Overall, our results demonstrate that SNPs in clustered miRNA seed regions can take part in more intricate and complex gene-regulating networks with lower functional cost by functional complementarity. Moreover, our results also broaden current knowledge on the genetic variation in human miRNA seed regions.

Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials. However, it is still a huge challenge for single-crystalline thin film on 2D materials without any other extra treatment or interlayer. Here, we grew high-quality single-crystalline AlN thin film on sapphire substrate with an intrinsic WS2 overlayer (WS2/sapphire) by metal-organic chemical vapor deposition, which had surface roughness and defect density similar to that grown on conventional sapphire substrates. Moreover, an AlGaN-based deep ultraviolet light emitting diode structure on WS2/sapphire was demonstrated. The electroluminescence (EL) performance exhibited strong emissions with a single peak at 283 nm. The wavelength of the single peak only showed a faint peak-position shift with increasing current to 80 mA, which further indicated the high quality and low stress of the AlN thin film. This work provides a promising solution for further deep-ultraviolet (DUV) light emitting electrodes (LEDs) development on 2D materials, as well as other unconventional substrates.

High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emitting diodes (LEDs) were grown directly on a single-layer graphene-covered Si (111) substrate by metal organic chemical vapor deposition (MOCVD) without a metal catalyst. The nanorods was nucleated by AlGaN nucleation islands with a 35% Al composition, and included n-AlGaN, 6 period of AlGaN multiple quantum wells (MQWs), and p-AlGaN. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) showed that the nanorods were vertically aligned and had an accordant orientation along the [0001] direction. The structure of AlGaN nanorod LEDs was investigated by scanning transmission electron microscopy (STEM). Raman measurements of graphene before and after MOCVD growth revealed the graphene could withstand the high temperature and ammonia atmosphere in MOCVD. Photoluminescence (PL) and cathodoluminescence (CL) characterized an emission at ~325 nm and demonstrated the low defects density in AlGaN nanorod LEDs.

We report internal quantum efficiency enhancement of thin p-GaN green quantum-well structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhancement factor is investigated. We obtain an internal quantum efficiency enhancement by a factor of 2.3 at 756 W/cm2, and a factor of 8.1 at 1 W/cm2. A Purcell enhancement up to a factor of 26 is estimated by fitting the experimental results to a theoretical model for the efficiency enhancement factor.

A nano-patterning approach on silicon dioxide (SiO2) material, which could be used for the selective growth of III-V nanowires in photovoltaic applications, is demonstrated. In this process, a silicon (Si) stamp with nanopillar structures was first fabricated using electron-beam lithography (EBL) followed by a dry etching process. Afterwards, the Si stamp was employed in nanoimprint lithography (NIL) assisted with a dry etching process to produce nanoholes on the SiO2 layer. The demonstrated approach has advantages such as a high resolution in nanoscale by EBL and good reproducibility by NIL. In addition, high time efficiency can be realized by one-spot electron-beam exposure in the EBL process combined with NIL for mass production. Furthermore, the one-spot exposure enables the scalability of the nanostructures for different application requirements by tuning only the exposure dose. The size variation of the nanostructures resulting from exposure parameters in EBL, the pattern transfer during nanoimprint in NIL, and subsequent etching processes of SiO2 were also studied quantitatively. By this method, a hexagonal arranged hole array in SiO2 with a hole diameter ranging from 45 to 75 nm and a pitch of 600 nm was demonstrated on a four-inch wafer.

An approach for fabricating sub-wavelength antireflective structures on SiC material is demonstrated. A time-efficient scalable nanopatterning method by rapid thermal annealing of thin metal film is applied followed by a dry etching process. Size-dependent optical properties of the antireflective SiC structures have been investigated. It is found that the surface reflection of SiC in the visible spectral range is significantly suppressed by applying the antireflective structures. Meanwhile, optical transmission and absorption could be tuned by modifying the feature size of the structure. It is believed that this effective fabrication method of antireflective structures could also be realized on other semiconductor materials or devices.

A least square support vector machine (SVM) model is proposed for shape modeling of slot antennas. The slot image is mapped into the electromagnetic response by the SVM model. A modified shapechanging technique is also proposed to describe the antenna geometry by the quadratic uniform B-spline curve and generate the slot images. In the model, the histogram of oriented gradients feature is extracted from the slot images to show the appearance and shape of the slot. The relationship between the histogram of oriented gradient features and the electromagnetic responses is preliminarily built on SVM and the transfer function. Then a radial basis function network is used for error correction. The effectiveness of the proposed model is confirmed with an example of a tri-band microstrip-fed slot antenna. Compared with the convolutional neural network (CNN), the feature extracted by CNN is substituted by the histogram of oriented gradients feature, and the proposed model shows the same accuracy and the improvement of training efficiency. [ABSTRACT FROM AUTHOR]

This paper proposes an artificial neural network (ANN) model based on parametric modeling for curved slots of the Vivaldi antenna. A more effective processing method is achieved by feeding ANN with the point positions that produce curved edges via cubic spline interpolation rather than the picture of metallic patches. The predicted results of ANN, including S-parameter and gain, agree well with those from the full-wave simulation. With the trained model, a Vivaldi antenna with the lower cut-off frequency is optimized by the multi-objective genetic algorithm. [ABSTRACT FROM AUTHOR]

E1/E2 defects are the typical negative-U centers in n-type 6H silicon carbide (SiC). They are the main contributors to non-radiative recombination, which limits the carrier lifetime. In this study, two fluorescent 6H silicon carbide (f-SiC) samples and one bulk substrate were characterized via time-resolved photoluminescence (TRPL) and static photoluminescence (PL) measurements, where all the samples were nitrogen-boron co-doped 6H n-type. The existence of E1/E2 defects, which caused the diminution of the internal quantum efficiency (IQE) and luminescence intensity of each sample, was confirmed by applying a carrier dynamics model based on negative-U centers. The carrier dynamics simulation reveals that the density of the E1/E2 defects in bulk 6H SiC is two orders of magnitude higher than that of the f-SiC sample, causing much lower PL intensity in the bulk substrate compared to the two f-SiC samples. The IQE of the two f-SiC samples was extracted from the corresponding TRPL results, where the contrast between their IQE was further confirmed by the related PL measurement results. The slight difference in IQE between the two f-SiC samples was attributed to slightly different E1/E2 defect concentrations. On the other hand, by implementing a steady-state donor-acceptor-pair (DAP) recombination calculation, it was found that the f-SiC sample with lower IQE had a higher DAP transition probability due to the higher doping level. This prompted further optimizations in the f-SiC crystal growth conditions in order to decrease the E1/E2 defects while maintaining the correct doping parameters. [ABSTRACT FROM AUTHOR]