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Requirements of higher performance, reduced size, weight and cost of high-frequency (HF) devices has led to the search for new: materials, material combinations, methods, processes and production equipment. Efficient technologies for producing HF-circuits and integral passives are looked for. Also of interest are integrated packaging solutions for high frequency electrical packaging and optical interconnects and packaging. Sequentially build up multi-layers have been deposited on a low cost FR-4 epoxy substrate. The dielectric layers consist of a photo-patternable inorganic-organic hybrid polymer (ORMOCER) and the metallization is Cu. An UV-exposure equipment enabling projection patterning with 5 μm resolution have been used. The produced microstrip lines, ring resonators, vias, stacked capacitors and filters have been characterized at frequencies from 1 to 40 GHz showing the potential of the new dielectric materials and processing technologies for microwave applications.

A multilayer sequential build-up structure for the integration of passivemicrowave devices is presented. The different devices were processed byusing a photo-patternable polymer ORMOCER together with conducting layersof Cu on top of a FR-4 substrate. Microstrip and stub structures have beencharacterised at frequencies between 1 to 40 GHZ showing the feasibility ofusing this kind of material and build-up technology for microwaveapplications.