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We propose a new design for electrocatalysts consisting of two electrocatalysts (platinum and iron oxide) that are deposited on the surfaces of an oxidized graphene substrate. This design is based on a simple structure where the catalysts were deposited separately on both sides of oxidized graphene substrate; while the iron oxide precipitated out of the etching solution on the bottom-side, the surface of the oxidized graphene substrate was decorated with platinum using the atomic layer deposition technique. The Fe2O3-decorated CVD-graphene composite exhibited better hydrogen electrooxidation performance (area-normalized electrode resistance (ANR) of ~600 Ω·cm−2) and superior stability in comparison with bare-graphene samples (ANR of ~5800 Ω·cm−2). Electrochemical impedance measurements in humidified hydrogen at 240 °C for (Fe2O3|Graphene|Platinum) electrodes show ANR of ~0.06 Ω·cm−2 for a platinum loading of ~60 µgPt·cm−2 and Fe2O3 loading of ~2.4 µgFe·cm−2, resulting in an outstanding mass normalized activity of almost 280 S·mgPt−1, exceeding even state-of-the-art electrodes. This ANR value is ~30% lower than the charge transfer resistance of the same electrode composition in the absence of Fe2O3 nanoparticles. Detailed study of the Fe2O3 electrocatalytic properties reveals a significant improvement in the electrode’s activity and performance stability with the addition of iron ions to the platinum-decorated oxidized graphene cathodes, indicating that these hybrid (Fe2O3|Graphene|Platinum) materials may serve as highly efficient catalysts for solid acid fuel cells and beyond.

Ge-Sb-Te alloys are promising materials for non-volatile memory applications. Alloying of the materials with various elements is considered as prospective approach to enhance material properties. This work reports on the preparation and characterization of pure Ge-Sb-Te-O (GSTO) and alloyed with La-Sr-Mn-O (LSMO) thin films. Thermal heating of amorphous thin films to different temperatures show distinct crystallization behavior. A general trend is the decrease in the size of GSTO crystallites and the suppression in the formation of stable trigonal GSTO phase with increasing content of LSMO. Microstructural studies by transmission electron microscopy show the formation of metastable GSTO nanocrystallites dispersed in the amorphous matrix. Analysis of local chemical bonding by X-ray spectroscopy reveal the presence of different oxides in the GSTO-LSMO composites. Moreover, the composites with a high LSMO content exhibit higher crystallization temperature and significant larger sheet resistance in amorphous and crystalline phase, while a memory device made of GSTO-LSMO alloy reveals bipolar switching and synaptic behavior. In addition, the amount of LSMO in GSTO-LSMO thin films influences their optical properties and band gap. Overall, the results of this work reveal the highly promising potential of GSTO-LSMO nanocomposites for data storage and reconfigurable photonic applications as well as neuro-inspired computing.

Ge-Sb-Te-based phase change memory alloys have recently attracted a lot of attention due to their promising applications in the fields of photonics, non-volatile data storage, and neuromorphic computing. Of particular interest is the understanding of the structural changes and underlying mechanisms induced by short optical pulses. This work reports on structural changes induced by single nanosecond UV laser pulses in amorphous and epitaxial Ge2Sb2Te5 (GST) thin films. The phase changes within the thin films are studied by a combined approach using X-ray diffraction and transmission electron microscopy. The results reveal different phase transitions such as crystalline-to-amorphous phase changes, interface assisted crystallization of the cubic GST phase and structural transformations within crystalline phases. In particular, it is found that crystalline interfaces serve as crystallization templates for epitaxial formation of metastable cubic GST phase upon phase transitions. By varying the laser fluence, GST thin films consisting of multiple phases and different amorphous to crystalline volume ratios can be achieved in this approach, offering a possibility of multilevel data storage and realization of memory devices with very low resistance drift. In addition, this work demonstrates amorphization and crystallization of GST thin films by using only one UV laser with one single pulse duration and one wavelength. Overall, the presented results offer new perspectives on switching pathways in Ge-Sb-Te-based materials and show the potential of epitaxial Ge-Sb-Te thin films for applications in advanced phase change memory concepts.

Electrochemical metallization memories have received much attention as candidates for next generation non-volatile memory applications, due to their fast switching speed, simple structure, high scalability and low energy consumption. Chalcogenide compounds like Ge–Sb–Te-based materials are extensively studied solid electrolytes for such devices and considered within the most promising candidates. In this work, the influence of different electrode materials on bipolar resistive switching characteristics of amorphous Ge–Sb–Te thin films with close composition to 2:2:5, prepared by pulsed laser deposition, is studied. Detailed investigations by current-voltage measurements, secondary ion mass spectrometry and cross-sectional transmission electron microscopy in conjunction with energy-dispersive x-ray spectroscopy are presented. Depending on the utilized electrode material, analog switching (Cu, Ag, Ti), digital switching (Co, Cr, Ta, Al) or no switching (Pt, Au and Cr-CrOx) occurs. This work shows that the switching behavior of Ge–Sb–Te strongly depends on the solubility and reactivity of the electrode material. [ABSTRACT FROM AUTHOR]

We report on the growth of epitaxial Fe1+δSe0.5Te0.5 thin films on 0°, 5°, 10°, 15° and 20° vicinal cut CaF2 single crystals by pulsed laser deposition. In situ electron and ex situ x-ray diffraction studies reveal a tilted growth of the Fe1+δSe0.5Te0.5 films, whereby under optimized deposition conditions the c-axis alignment coincides with the substrate [001] tilted axis up to a vicinal angle of 10°. Atomic force microscopy shows a flat island growth for all films. From resistivity measurements in longitudinal and transversal directions, the ab- and c-axis components of resistivity are derived and the mass anisotropy parameter is determined. Analysis of the critical current density indicates that no effective c-axis correlated defects are generated by vicinal growth, and pinning by normal point core defects dominates. However, for H∣∣ab the effective pinning centers change from surface defects to point core defects near the superconducting transition due to the vicinal cut. Furthermore, we show in angular-dependent critical current density data a shift of the ab-planes maxima position with the magnetic field strength. [ABSTRACT FROM AUTHOR]