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The development of high‐performance organic solar cells (OSCs) with high operational stability is essential to accelerate their commercialization. Unfortunately, our understanding of the origin of instabilities in state‐of‐the‐art OSCs based on bulk heterojunction (BHJ) featuring non‐fullerene acceptors (NFAs) remains limited. Herein, we developed NFA‐based OSCs using different charge extraction interlayer materials and studied their storage, thermal, and operational stabilities. Despite the high power conversion efficiency (PCE) of the OSCs (17.54%), we found that cells featuring self‐assembled monolayers (SAMs) as hole‐extraction interlayers exhibited poor stability. The time required for these OSCs to reach 80% of their initial performance (T80) was only 6 h under continuous thermal stress at 85 °C in a nitrogen atmosphere and 1 h under maximum power point tracking (MPPT) in a vacuum. Inserting MoOx between ITO and SAM enhanced the T80 to 50 and ~15 h after the thermal and operational stability tests, respectively, while maintaining a PCE of 16.9%. Replacing the organic PDINN electron transport layer with ZnO NPs further enhances the cells' thermal and operational stability, boosting the T80 to 1000 and 170 h, respectively. Our work reveals the synergistic roles of charge‐selective interlayers and device architecture in developing efficient and stable OSCs. [ABSTRACT FROM AUTHOR]

While colloidal quantum dot photovoltaic devices (CQDPVs) can achieve a power conversion efficiency (PCE) of ≈12%, their insufficient optical absorption in the near‐infrared (NIR) regime impairs efficient utilization of the full spectrum of visible light. Here, high‐efficiency, solution‐processed, hybrid series, tandem photovoltaic devices are developed featuring CQDs and organic bulk heterojunction (BHJ) photoactive materials for front‐ and back‐cells, respectively. The organic BHJ back‐cell efficiently harvests the transmitted NIR photons from the CQD front‐cell, which reinforces the photon‐to‐current conversion at 350–1000 nm wavelengths. Optimizing the short‐circuit current density balance of each sub‐cell and creating a near ideal series connection using an intermediate layer achieve a PCE (12.82%) that is superior to that of each single‐junction device (11.17% and 11.02% for the CQD and organic BHJ device, respectively). Notably, the PCE of the hybrid tandem device is the highest among the reported CQDPVs, including single‐junction devices and tandem devices. The hybrid tandem device also exhibits almost negligible degradation after air storage for 3 months. This study suggests a potential route to improve the performance of CQDPVs by proper hybridization with NIR‐absorbing photoactive materials. [ABSTRACT FROM AUTHOR]

Abstract: The enhancement of interfacial charge collection efficiency using buffer layers is a cost‐effective way to improve the performance of organic photovoltaic devices (OPVs) because they are often universally applicable regardless of the active materials. However, the availability of high‐performance buffer materials, which are solution‐processable at low temperature, are limited and they often require burdensome additional surface modifications. Herein, high‐performance ZnO based electron transporting layers (ETLs) for OPVs are developed with a novel g‐ray‐assisted solution process. Through careful formulation of the ZnO precursor and g‐ray irradiation, the pre‐formation of ZnO nanoparticles occurs in the precursor solutions, which enables the preparation of high quality ZnO films. The g‐ray assisted ZnO (ZnO‐G) films possess a remarkably low defect density compared to the conventionally prepared ZnO films. The low‐defect ZnO‐G films can improve charge extraction efficiency of ETL without any additional treatment. The power conversion efficiency (PCE) of the device using the ZnO‐G ETLs is 11.09% with an open‐circuit voltage (VOC), short‐circuit current density ( JSC), and fill factor (FF) of 0.80 V, 19.54 mA cm‐2, and 0.71, respectively, which is one of the best values among widely studied poly[4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)benzo[1,2‐b;4,5‐b′]dithiophene‐2,6‐diyl‐alt‐(4‐(2‐ethylhexyl)‐3‐fluorothieno[3,4‐b]thiophene‐)‐2‐carboxylate‐2‐6‐diyl)]: [6,6]‐phenyl‐C71‐butyric acid methyl ester (PTB7‐Th:PC71BM)‐based devices. [ABSTRACT FROM AUTHOR]

Abstract: Herein, this study reports high‐efficiency, low‐temperature ZnO based planar perovskite solar cells (PSCs) with state‐of‐the‐art performance. They are achieved via a strategy that combines dual‐functional self‐assembled monolayer (SAM) modification of ZnO electron accepting layers (EALs) with sequential deposition of perovskite active layers. The SAMs, constructed from newly synthesized molecules with high dipole moments, act both as excellent surface wetting control layers and as electric dipole layers for ZnO‐EALs. The insertion of SAMs improves the quality of PbI2 layers and final perovskite layers during sequential deposition, while charge extraction is enhanced via electric dipole effects. Leveraged by SAM modification, our low‐temperature ZnO based PSCs achieve an unprecedentedly high power conversion efficiency of 18.82% with a VOC of 1.13 V, a JSC of 21.72 mA cm−2, and a FF of 0.76. The strategy used in this study can be further developed to produce additional performance enhancements or fabrication temperature reductions. [ABSTRACT FROM AUTHOR]

The enhancement of interfacial charge collection efficiency using buffer layers is a cost-effective way to improve the performance of organic photovoltaic devices (OPVs) because they are often universally applicable regardless of the active materials. However, the availability of high-performance buffer materials, which are solution-processable at low temperature, are limited and they often require burdensome additional surface modifications. Herein, high-performance ZnO based electron transporting layers (ETLs) for OPVs are developed with a novel g -ray-assisted solution process. Through careful formulation of the ZnO precursor and g -ray irradiation, the pre-formation of ZnO nanoparticles occurs in the precursor solutions, which enables the preparation of high quality ZnO films. The g -ray assisted ZnO (ZnO-G) films possess a remarkably low defect density compared to the conventionally prepared ZnO films. The low-defect ZnO-G films can improve charge extraction efficiency of ETL without any additional treatment. The power conversion efficiency (PCE) of the device using the ZnO-G ETLs is 11.09% with an open-circuit voltage ( V OC ), short-circuit current density (  J SC ), and fill factor (FF) of 0.80 V, 19.54 mA cm -2 , and 0.71, respectively, which is one of the best values among widely studied poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2-carboxylate-2-6-diyl)]: [6,6]-phenyl-C 71 -butyric acid methyl ester (PTB7-Th:PC 71 BM)-based devices.