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We carried out a study of the strain-compensated InxGa1-xN/GaN and InxGa1-xN/InyGa1-yN multiple quantum wells, In order to carry out this analysis, we choose a set of three different types of samples. The optimization of this laser structure allowed us to determine the optimal values of the functional parameters, in order to adjust their performance and interest. We also studied the electronic and structural properties of compound semiconductor alloys used in wurtzite phase and we have presented a comparative theoretical study of both structures. Our studies show the improvement of the spontaneous emission spectra and better carrier confinement from the use of InxGa1-xN/InyGa1-yN MQW with higher In-content in barrier as active regions for diode lasers and this structure is useful for the design of new high performance Laser diodes emitting in the Blue/Violet range, and it's also shows that the process of the electron-holes transition is strongly affected by the quantum well width and the Indium composition, and the InGaN lattice mismatch that increases with In-content causing the strain accumulation inside the QW structure. However, strain is undesirable as it can cause defects such as cracking at the interface. We can optimize the InGaN/GaN strained quantum well structures to achieve a reliable optoelectronic component. It suffices to incorporate small amounts of indium in the barrier enhances the annihilation of the defect and strain, thereby improving their structural properties. [ABSTRACT FROM AUTHOR]

In this paper we investigate the optical gain seen by the polarization modes for each of Transverse Electric (TE) and Transverse Magnetic(TM) of GaAs/Al0.32Ga0.68As quantum-well lasers. The factor confinement and modal gain of proposed structure also have been simulated. Comparison between the two structures (single and multiple quantum) were conducted in the effort to evaluate and understand their behavior. Results show that the optical gain offers a better value in TE mode than in TM mode. As a result of being on higher standard and having a better performance in both cases thus this study conclude that the multiple quantum well structures are a better designed choice compared to single quantum well structure. [ABSTRACT FROM AUTHOR]

Abstract: The fact that laser diodes are by nature a key component of all optoelectronic systems induced during ten last years a particularly great research effort is devoted to this component. Corresponding works cover a broad field of study of the physical properties of materials up to the analysis of the whole of the mechanisms governing the device operation. The aim of the present work is to contribute by a comparison of lasers diode containing quaternary alloy for different wavelength for a structure hetero-junction and double hetero-junction. We chose for our study the following alloys: Ga0,65In0, 35As0,15Sb0,85, Ga0,60In0,40As0,02Sb0,98and Ga0,46In0,54As0,48Sb0,52. The characteristics on which we focused our study is the analysis of this structure and the comparison summarizes the maximum gain and the minimal density of current. [Copyright &y& Elsevier]