47 results on '"Habersat, Daniel B."'
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2. Design and optimization of NUV-enhanced 4H-SiC separate-absorption-charge-multiplication avalanche photodiodes
3. Effect of Dynamic Threshold-Voltage Instability on Dynamic ON-State Resistance in SiC MOSFETs
4. AC-Stress Degradation and Its Anneal in SiC MOSFETs
5. AC-Stress Degradation in SiC MOSFETs
6. Spatial Nonuniformity of Photoresponse in SiC UV Avalanche Photodiodes Operating in Linear and Geiger Mode.
7. Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification
8. Influence of High-Temperature Bias Stress on Room-Temperature VT Drift Measurements in SiC Power MOSFETs
9. Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs
10. Influences of Bias Interruption and Reapplication on High-Temperature Threshold-Voltage Shifts of SiC DMOSFETs
11. SiC MOSFET threshold-stability issues
12. Feasibility of SiC Threshold Voltage Drift Characterization for Reliability Assessment in Production Environments
13. SiC MOSFET reliability and implications for qualification testing
14. Temperature-dependent threshold stability of COTS SiC MOSFETs during gate switching
15. Studies of spatial uniformity and jitter in SiC UV SPADs.
16. Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs
17. Threshold-Voltage Instability in SiC MOSFETs Due to Near-Interfacial Oxide Traps
18. Comparison of Test Methods for Proper Characterization of VT in SiC MOSFETs
19. Evaluations of threshold voltage stability on COTS SiC DMOSFETs using fast measurements
20. Design and optimization of NUV-enhanced 4H-SiC separate-absorption-charge-multiplication avalanche photodiodes.
21. Influence of High-Temperature Bias Stress on Room-Temperature VT Drift Measurements in SiC Power MOSFETs
22. Simulating the Influence of Mobile Ionic Oxide Charge on SiC MOS Bias-Temperature Instability Measurements
23. Bias-Temperature-Stress Response of Commercially-Available SiC Power MOSFETs
24. Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs
25. Studies of spatial uniformity and jitter in SiC UV SPADs
26. Simulating ion transport and its effects in silicon carbide power MOSFET gate oxides
27. Evaluation of PBTS and NBTS in SiC MOS Using In Situ Charge Pumping Measurements
28. A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs
29. Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs
30. Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing
31. Detection of Mobile Ions in the Presence of Charge Trapping in SiC MOS Devices
32. Design and optimization of NUV-enhanced 4H-SiC separate-absorption-charge-multiplication avalanche photodiodes
33. Using triangular voltage sweep to detect mobile ions in silicon carbide MOS
34. Improved Observation of SiC/SiO2 Oxide Charge Traps Using MOS C-V
35. High-Temperature Reliability of SiC Power MOSFETs
36. Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics
37. Implications of Threshold-Voltage Instability on SiC DMOSFET Operation
38. Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge
39. Temperature-Dependence of SiC MOSFET Threshold-Voltage Instability
40. The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping
41. Investigation of Drain Current Saturation in 4H-SiC MOSFETs
42. Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs
43. Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2
44. On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices
45. Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation
46. Comparison of Test Methods for Proper Characterization of VT in SiC MOSFETs
47. Improved Observation of SiC/SiO2 Oxide Charge Traps Using MOS C-V
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