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3. First demonstration of full integration and characterization of 4F² 1S1M cells with 45 nm of pitch and 20 nm of MTJ size

18. Investigation of the retention performance of an ultra-thin HfO2 resistance switching layer in an integrated memory device.

30. Fabrication of a Cu‐Cone‐Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability

32. Tension Estimation of External Tendons in PC Bridges Using Vibration Measurement Method

36. Roughness and pore structure control of ordered mesoporous silica films for the enhancement of electrical properties.

37. Breakthrough of selector technology for cross-point 25-nm ReRAM

38. Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM

43. A New White Sesame Variety ‘Milsung’ having Dense Capsule and High Yield

45. A New Black Seed Coat Soybean Cultivar, ‘Geomjeong 5’ with Short Stem Height, Lodging Tolerance and High Yield

46. A New Black Seed Coat Soybean Cultivar, ‘Socheong 2’ with Green Cotyledon and Small Seed Size

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