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Two-dimensional (2D) heterostructuring is a versatile methodology for designing nanoarchitecture catalytic systems that allow for reconstruction and modulation of interfaces and electronic structures. However, catalysts with such structures are extremely scarce due to limited synthetic strategies. Here, we report a highly ordered 2D Ru/Si nano-heterostructures (RSHS) by acid etching of the LaRuSi electride. RSHS shows a superior electrocatalytic activity for hydrogen evolution with an overpotential of 14 mV at 10 mA/cm2 in alkaline media. Both experimental analysis and first-principles calculations demonstrate that the electronic states of Ru can be tuned by strong interactions of the interfacial Ru-Si, leading to an optimized hydrogen adsorption energy. Moreover, due to the synergistic effect of Ru and Si, the energy barrier of water dissociation is significantly reduced. The unique nanostripe structure with abundant interfaces in RSHS will provide a paradigm for construction of efficient catalysts with tunable electronic states and dual active sites., Comment: 20 pages, 5 figures

High magnetic fields up to 105 T have been utilized in deriving the upper critical field $B_{\rm c2}$ of LaFeAsO$_{1-x}$H$_x$ throughout whole temperatures below $T_{\rm c}$. Resistivity measurements demonstrate that $B_{\rm c2}$ behaves differently in samples with $x = 0.12$ (SC1) from those with 0.32 (SC2). In SC1, the two-band model assuming the $s$-wave pairing gives a good fitting with repulsive intraband interaction and dominant interband coupling. In SC2, we have to assume attractive intraband interaction with weak interband coupling, which in fact suggests a non-$s$-wave pairing in view of the strong Coulomb repulsion. These results support the possibility that SC1 and SC2 have different pairing symmetries.

Searching for functional square lattices in layered superconductor systems offers an explicit clue to modify the electron behavior and find exotic properties. The trigonal SnAs3 structural units in SnAs-based systems are relatively conformable to distortion, which provides the possibility to achieve structurally topological transformation and higher superconducting transition temperatures. In the present work, the functional As square lattice was realized and activated in Li0.6Sn2As2 and NaSnAs through a topotactic structural transformation of trigonal SnAs3 to square SnAs4 under pressure, resulting in a record-high Tc among all synthesized SnAs-based compounds. Meanwhile, the conductive channel transfers from the out-of-plane pz orbital to the in-plane px+py orbitals, facilitating electron hopping within the square 2D lattice and boosting the superconductivity. The reorientation of p-orbital following a directed local structure transformation provides an effective strategy to modify layered superconductors., Comment: 6 pages,4 figures, Accepted by Angew. Chem. Int. Ed

The electronic transport properties of a highly hydrogen-substituted 1111-type SmFeAsO epitaxial film with high critical-temperature (Tc = 45 K) were investigated under high magnetic fields. By using a single-turn magnet generating up to 130 T, we clarified that the upper critical field ({\mu}0Hc2) of SmFeAsO0.65H0.35 is 120 T at the nearly low-temperature limit of 2.2 K for {\mu}0H || ab. The angular dependence of {\mu}0Hc2 revealed that the anisotropic parameter ({\gamma}) around Tc is ~2, which is comparable with that of a practical candidate 122-type BaFe2As2 with lower Tc and much smaller than that of F-substituted SmFeAsO. The small {\gamma} mainly originates from the high hydrogen incorporation. The extremely high {\mu}0Hc2 and small {\gamma}, together with the high Tc and high critical current density, suggest that SmFeAsO1-xHx has high potential for the superconducting electromagnets and cables.

By breaking the restrictions on traditional alloying strategy, the high entropy concept has promoted the exploration of the central area of phase space, thus broadening the horizon of alloy exploitation. This review highlights the marriage of the high entropy concept and van der Waals systems to form a new family of materials category, namely the high entropy van der Waals materials (HEX, HE = high entropy, X= anion clusters) and describe the current issues and next challenges. The design strategy for HEX has integrated the local feature (e.g., composition, spin, and valence states) of structural units in high entropy materials and the holistic degrees of freedom (e.g., stacking, twisting, and intercalating species) in van der Waals materials, and has been successfully employed for the discovery of high entropy dichalcogenides, phosphorus tri-chalcogenides, halogens, and MXene. The rich combination and random distribution of the multiple metallic constituents on the nearly-regular 2D lattice give rise to a flexible platform to study the correlation features behind a range of selected physical properties, e.g., superconductivity, magnetism, and metal-insulator transition. The deliberate design of structural units and their stacking configuration can also create novel catalysts to enhance their performance in a bunch of chemical reactions., Comment: 25 pages, 15 figures

MPX3 (M=metals, X=S or Se) represents a large family of van der Waals (vdW) materials featuring with P-P dimers of ~2.3 {\AA} separation. Its electrical transport property and structure can hardly be tuned by the intentional chemical doping and ionic intercalation. Here, we employ an entropy-enhancement strategy to successfully obtain a series of medium-entropy compounds MEPSe3 (ME=Fe, Mn, Cd and In), in which the electrical and magnetic properties changed simultaneously. Lone-pair electrons of P emerge due to the dissociation of the dimers as evidenced by a 35% elongation in the P-P interatomic distance. The band gap widens from 0.1 eV to 0.7 eV by this dissociation. Under external physical pressure up to ~50 GPa, a giant collapse of up to 15% in the c-axis happens, which is in contrast to the in-plane shrinkage of their counterparts Fe/MnPSe3. It leads to the recombination of P3- with lone pair electrons into a P-P dimer and the smallest bulk modulus of 28 GPa in MPX3. The MEPSe3 transits from a spin-glass insulator to metal, and to superconductor, which is rarely observed in the MPX3. Our findings highlight the P-P dimer as an indicator to probe diverse electronic structure and the effectiveness of entropy-enhancement in materials science., Comment: 10 pages, 4 figures

Many-body interactions between quasiparticles (electrons, excitons, and phonons) have led to the emergence of new complex correlated states and are at the core of condensed matter physics and material science. In low-dimensional materials, unique electronic properties for these correlated states could significantly affect their optical properties. Herein, combining photoluminescence, optical reflection measurements and theoretical calculations, we demonstrate an unconventional excitonic state and its bound phonon sideband in layered silicon diphosphide (SiP$_2$), in which the bound electron-hole pair is composed of electrons confined within one-dimensional phosphorus$-$phosphorus chains and holes extended in two-dimensional SiP$_2$ layers. The excitonic state and the emergent phonon sideband show linear dichroism and large energy redshifts with increasing temperature. Within the $GW$ plus Bethe$-$Salpeter equation calculations and solving the generalized Holstein model non-perturbatively, we confirm that the observed sideband feature results from the correlated interaction between excitons and optical phonons. Such a layered material provides a new platform to study excitonic physics and many-particle effects.

One significant drawback of a spectroscopic ellipsometry (SE) technique is its time-consuming and often complicated analysis procedure necessary to assess the optical functions of thin-film and bulk samples. Here, to solve this inherent problem of a traditional SE method, we present a new general way that allows full automation of SE analyses for crystalline-phase semiconductors exhibiting complex absorption features. In particular, we have modified a scheme established in our previous study, which performs a non-linear SE fitting analysis only in a low energy region at the beginning, while the analyzed energy region is gradually expanded toward higher energy by incorporating addition optical transition peaks. In this study, we have further developed a unique analyzing-energy search algorithm, in which a proper analyzing-energy region is determined to incorporate the feature of a new transition peak. In the developed method, a drastic improvement over the previous simple approach has been confirmed for expressing complex dielectric functions consisting of sharp and broad absorption peaks. The proposed method (Delta M method) has been applied successfully to analyze perovskite-based crystalline samples, including hybrid perovskite (CH3NH3PbI3) and chalcogenide perovskites (SrHfS3 and BaZrS3). In the automated analyses of these semiconductors, 7-8 transition peaks are introduced automatically to describe sample dielectric functions, while structural parameters, such as thin-film and roughness thicknesses, are also determined simultaneously. The established method can drastically reduce an analysis time to a level that allows the automatic inspection of daily varying material optical properties and expands the application area of spectroscopic ellipsometry considerably., Comment: 23 pages, 10 figures

Here we report on a new kind of compound, X{\delta}Ir4X12-{\delta} (X = P, As), the first hole-doped skutterudites superconductor. We provide atomic resolution images of the caging As atoms using scanning transmission electron microscopy (STEM). By inserting As atoms into the caged structure under a high pressure, superconductivity emerges with a maximum transition temperature (Tc) of 4.4 K (4.8 K) in IrAs3 (IrP3). In contrast to all of the electron-doped skutterudites, the electronic states around the Fermi level in X{\delta}Ir4X12-{\delta} are dominated by the caged X atom, which can be described by a simple body-centered tight-binding model, implying a distinct paring mechanism. Our density functional theory (DFT) calculations reveal an intimate relationship between the pressure-dependent local-phonon mode and the enhancement of Tc. The discovery of X{\delta}Ir4X12-{\delta} provides an arena to investigate the uncharted territory of hole-doped skutterudites, and the method proposed here represents a new strategy of carrier doping in caged structures, without introducing extra elements., Comment: 14 pages, 4 figures, 1 table

The clathrate-like or caged compounds have attracted continuing interest due to their structural flexibility as well as fertile physical properties. Here we report a pressure-induced reemergence of superconductivity in BaIr2Ge7 and Ba3Ir4Ge16, two new caged superconductors with two-dimensional building blocks of cage structures. After suppressing the ambient-pressure superconducting (SC-I) state, a new superconducting (SC-II) state emerges unexpectedly, with Tc increased to a maximum of 4.4 K and 4.0 K for BaIr2Ge7 and Ba3Ir4Ge16, respectively. Combined with high-pressure synchrotron x-ray diffraction and Raman measurements, we propose that the reemergence of superconductivity in the caged superconductors can be ascribed to a pressure-induced phonon softening linked to the cage shrink., Comment: 13 pages, 3 figures

High-entropy alloy (HEA) is an attracting topic raising in materials science and condensed matter physics. Although several types of superconductors have been discovered in HEAs, the critical currents (Jc) of HEA superconductors remain uncharacterized up to now. Here, we systematically study the current-carrying ability of (TaNb)0.7(HfZrTi)0.5 HEA at various heat treatment conditions. We obtained the high upper critical field and large current carrying ability, which point to optimistic applications. Interestingly, the fishtail or second peak effect was found for the first time in HEA superconductors, and the position of the vortex pinning force shows a maximum at 0.72 of the reduced field, which is quite different from the cuprates and iron-based high-Tc superconductors. Together with the resistive measurements, the vortex phase diagram is obtained for HEA superconductor., Comment: 9 pages, 4 figures

We report the synthesis and superconducting properties of a layered cage compound Ba3Rh4Ge16. Similar to Ba3Ir4Ge16, the compound is composed of 2D networks of cage units, formed by noncubic Rh-Ge building blocks, in marked contrast to the reported rattling compounds. The electrical resistivity, magnetization, specific heat capacity, and muSR measurements unveiled moderately coupled s-wave superconductivity with a critical temperature Tc = 7.0 K, the upper critical field ~ 2.5 T, the electron-phonon coupling strength ~ 0.80, and the Ginzburg-Landau parameter ~ 7.89. The mass reduction by the substitution of Ir by Rh is believed to be responsible for the enhancement of Tc and coupling between the cage and guest atoms. Our results highlight the importance of the atomic weight of the framework in cage compounds in controlling the electron-phonon coupling strength and Tc., Comment: 8 pages, 7 figures,1 table

We present a systematic study clarifying an electronic correlation trend of electrides from first principles. By using the maximally localized Wannier function and the constrained random phase approximation, we calculated the electronic correlation strength $(U-U_{nn})/|t|$ of 19 inorganic electrides, where $U$, $U_{nn}$, and $t$ are the effective onsite Coulomb repulsion, nearest-neighbor Coulomb repulsion, and the nearest-neighbor transfer integrals, respectively. The electronic correlation was found to be highly correlated with the dimensionality of the Wannier-function network of anionic electrons in electrides; the correlation strength varies in the order 0D $>>$ 1D $>$ 2D $\sim$ 3D, showing good correspondence with experimental trends, and exceeds 10 (a measure for the emergence of exotic properties) in all the 0D systems and some of the 1D materials. We also found that the electronic correlation depends on the cation species surrounding the anionic electrons; in the 1D electrides, the electronic correlation becomes stronger for cationic walls consisting of $\mathrm{Ca^{2+}}$, $\mathrm{Sr^{2+}}$, and $\mathrm{Ba^{2+}}$ in this order, and the correlation strength exceeds 10 for $\mathrm{Ba_5As_3}$. The theoretical results indicate that 0- and 1-dimensional electrides will be new research targets for studies on strongly correlated electron systems., Comment: 26 pages

Superatomic crystal is a class of hierarchical materials composed of atomically precise clusters assembled via van der Waals or covalent-like interactions. AuTe$_2$Se$_{4/3}$, an all-inorganic superatomic superconductor exhibiting superatomic-charge-density-wave (S-CDW), provides a first platform to study the response of their collectively quantum phenomenon to the external pressure in superatomic crystals. We reveal a competition between S-CDW and superconductivity using cutting-edge measurements on thin flakes at low pressures. Prominently, the pressure modulation of S-CDW ordering is 1$\sim$2 order of magnitudes (0.1 GPa) lower than that of conventional atomic superconductors. As pressure increases to 2.5 GPa, the $T_{\mathrm{CDW}}$ is suppressed and the superconducting transition temperature ($T_{\mathrm{c}}$) is firstly enhanced, and reaches the maximum then quenches with increasing pressure. Above 7.3 GPa, a second superconducting phase emerges, and then a three-fold enhancement in the transition temperature ($T_{\mathrm{c}}$) happens. Analyses of the crystal structure and theoretical calculations suggest a pressure-mediated switch of the conduction channel from the $a$- to the $b$-axis occur, followed by a dimensional crossover of conductivity and the Fermi surface from 2D to 3D., Comment: 6 pages, 4 figures

Fermi surface nesting, as a peculiar reciprocal space feature, is not only closely correlated with the real space superstructure, but also directly modulates the underlying electronic behavior. In this work, we elucidate the Fermi surface nesting feature of the IrSb compound with buckled-honeycomb-vacancy (BHV) ordering through Rh and Sn doping, and its correlation with structure and electronic state evolution. The advantageous substitution of atom sites (i.e., Rh on the Ir sites, Sn on the Sb sites, respectively), rather than the direct occupation of vacancies, induces the collapse of BHV order and the emergence of superconductivity. The distinct superconducting behavior of Rh and Sn incorporated systems are ascribed to the mismatch of Fermi surface nesting in the Sn case., Comment: 6 pages, 4 figures

The charge, spin, and composition degrees of freedom in high-entropy alloy endow it with tunable valence and spin states, infinite combinations and excellent mechanical performance. Meanwhile, the stacking, interlayer, and angle degrees of freedom in van der Waals material bring it with exceptional features and technological applications. Integration of these two distinct material categories while keeping their merits would be tempting. Based on this heuristic thinking, we design and explore a new range of materials (i.e., dichalcogenides, halides and phosphorus trisulfides) with multiple metallic constitutions and intrinsic layered structure, which are coined as high-entropy van der Waals materials. Millimeter-scale single crystals with homogeneous element distribution can be efficiently acquired and easily exfoliated or intercalated in this materials category. Multifarious physical properties like superconductivity, magnetic ordering, metal-insulator transition and corrosion resistance have been exploited. Further research based on the concept of high-entropy van der Waals materials will enrich the high-throughput design of new systems with intriguing properties and practical applications., Comment: 10 pages, 3 figures, and 1 table

By tackling the challenge of extending transparent oxide semiconductors to Ge based oxides, we have found a not-yet-reported crystal structure, named $\beta$-SrGe$_2$O$_5$, which is composed of edge-sharing GeO$_6$ octahedra interconnected by GeO$_5$ bipyramids. Single crystals were successfully grown by the high-pressure flux method. $\beta$-SrGe$_2$O$_5$ has a band gap of 5.2 eV and a dispersive conduction band with an effective mass as small as 0.34 times the electron rest mass, which originates from the edge-sharing GeO$_6$ octahedra network. Although known compounds with octahedral GeO$_6$ coordination are commonly unstable at atmospheric pressure and elevated temperatures, $\beta$-SrGe$_2$O$_5$ exhibits thermal stability up to 700 $^\circ$C., Comment: 23 pages, 8 figures

GeO$_2$ has an $\alpha$-quartz-type crystal structure with a very wide fundamental band gap of 6.6 eV and is a good insulator. Here we find that the stable rutile-GeO$_2$ polymorph with a 4.6 eV band gap has a surprisingly low $\sim$6.8 eV ionization potential, as predicted from the band alignment using first-principles calculations. Because of the short O$-$O distances in the rutile structure containing cations of small effective ionic radii such as Ge$^{4+}$, the antibonding interaction between O 2p orbitals raises the valence band maximum energy level to an extent that hole doping appears feasible. Experimentally, we report the flux growth of $1.5 \times 1.0 \times 0.8$ mm$^3$ large rutile GeO$_2$ single crystals and confirm the thermal stability for temperatures up to $1021 \pm 10~^\circ$C. X-ray fluorescence spectroscopy shows the inclusion of unintentional Mo impurities from the Li$_2$O$-$MoO$_3$ flux, as well as the solubility of Ga in the r-GeO$_2$ lattice as a prospective acceptor dopant. The resistance of the Ga- and Mo-codoped r-GeO$_2$ single crystals is very high at room temperature, but it decreases by 2-3 orders of magnitude upon heating to 300 $^\circ$C, which is attributed to thermally-activated p-type conduction.

Vacancies are prevalent and versatile in solid-state physics and materials science. The role of vacancies in strongly correlated materials, however, remains uncultivated until now. Here, we report the discovery of an unprecedented vacancy state forming an extended buckled-honeycomb-vacancy (BHV) ordering in Ir$_{16}$Sb$_{18}$. Superconductivity emerges by suppressing the BHV ordering through squeezing of extra Ir atoms into the vacancies or isovalent Rh substitution. The phase diagram on vacancy ordering reveals the superconductivity competes with the BHV ordering. Further theoretical calculations suggest that this ordering originates from a synergistic effect of the vacancy formation energy and Fermi surface nesting with a wave vector of (1/3, 1/3, 0). The buckled structure breaks the crystal inversion symmetry and can mostly suppress the density of states near the Fermi level. The peculiarities of BHV ordering highlight the importance of "correlated vacancies" and may serve as a paradigm for exploring other non-trivial excitations and quantum criticality., Comment: 38 pages, 24 figures, 3 tables

Recently, natural van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n have been theoretically predicted and experimentally shown to host tunable magnetic properties and topologically nontrivial surface states. In this work, we systematically investigate both the structural and electronic responses of MnBi2Te4 and MnBi4Te7 to external pressure. In addition to the suppression of antiferromagnetic order, MnBi2Te4 is found to undergo a metal-semiconductor-metal transition upon compression. The resistivity of MnBi4Te7 changes dramatically under high pressure and a non-monotonic evolution of \r{ho}(T) is observed. The nontrivial topology is proved to persists before the structural phase transition observed in the high-pressure regime. We find that the bulk and surface states respond differently to pressure, which is consistent with the non-monotonic change of the resistivity. Interestingly, a pressure-induced amorphous state is observed in MnBi2Te4, while two high pressure phase transitions are revealed in MnBi4Te7. Our combined theoretical and experimental research establishes MnBi2Te4 and MnBi4Te7 as highly tunable magnetic topological insulators, in which phase transitions and new ground states emerge upon compression., Comment: 13 pages, 7 figures

In higher-order topological insulators, bulk and surface electronic states are gapped, while there appear gapless hinge states protected by spatial symmetry. Here we show by ab initio calculations that the La apatite electride is a higher-order topological crystalline insulator. It is a one-dimensional electride, in which the one-dimensional interstitial hollows along the $c$ axis support anionic electrons, and the electronic states in these one-dimensional channels are well approximated by the one-dimensional Su-Schrieffer-Heeger model. When the crystal is cleaved into a hexagonal prism, the 120$^\circ$ hinges support gapless hinge states, with their filling quantized to be 2/3. This quantization of the filling comes from a topological origin. We find that the quantized value of the filling depends on the fundamental blocks that constitute the crystal. The apatite consists of the triangular blocks, which is crucial for giving nontrivial fractional charge at the hinge., Comment: 13 pages, 11 figures

Iron-based superconductors have grown to be a new continent of high Tc superconductors comparable to cuprates. The optimal critical temperature (Tc) of 56 K in electron-doped 1111-type iron oxypnictides attracts considerable attention of physicists and chemists. Carrier doping is not only essential to induce superconductivity but also is a critical parameter that governs the electronic, magnetic, and crystallographic properties of ground states in high-Tc superconductors. Hydride ion (H-) which is an anionic state of hydrogen acts as an efficient electron donor in the 1111-type, leading to several important discoveries such as two-dome structure of superconducting phase and bipartite parent phase. This article summarizes the synthesis, physical properties, and electronic structure of the H- bearing 1111-type iron-based superconductors along with the relevant phenomena of other superconductors. We show several common characteristics of iron-based superconductors with high-Tc over 50 K and suggest a way to achieve higher Tc., Comment: 15 pages, 16 figures

A high production rate of negative hydrogen ion was observed from a nanoporous C12A7 electride surface immersed in hydrogen/deuterium low-pressure plasmas. The target was biased at 10-170 V negatively and the target surface was bombarded by H3 + ions from the plasma. The production rate was 1-2 orders higher than a clean molybdenum surface. The measured H-energy spectrum indicates that the major production mechanism is desorption by sputtering. This material has potential to be used as production surface of cesium-free negative ion sources for accelerators, heating beams in nuclear fusion, and surface modification for industrial applications.

The kagome lattice, consisting of interconnected triangles and hexagons uniquely, is an excellent model system for study frustrated magnetism, electronic correlation and topological electronic structure. After an intensive investigation on frustrated magnetism in insulating magnetic kagome lattices, the interplay between charge and spin degrees of freedom via spin-orbital coupling in metallic systems (kagome metals) has become an attractive topic recently. Here, we study centrosymmetric YMn6Sn6 with Mn kagome lattice. We discover that it exhibits giant topological Hall effect near room temperature, ascribed to the field-induced non-collinear spin texture, possibly a skyrmion lattice (SkL) state. Combined with the large intrinsic anomalous Hall effect, YMn6Sn6 shows a synergic effect of real- and momentum-space Berry phase on physical properties. Since the features of tunable magnetic interaction and flexible structure in this large homologous series, it provides a novel platform for understanding the influence of electronic correlations on topological quantum states in both real and momentum spaces., Comment: 28 pages, 9 figures

Inelastic neutron scattering was performed for an iron-based superconductor LaFeAsO0.9D0.1, where most of D (deuterium) replaces oxygen, while a tiny amount goes into interstitial sites. By first-principle calculation, we characterize the interstitial sites for D (and for H slightly mixed) with four equivalent potential minima. Below the superconducting transition temperature Tc = 26 K,new excitations emerge in the range 5-15 meV, while they are absent in the reference system LaFeAsO0.9F0.1. The strong excitations at 14.5 meV and 11.1 meV broaden rapidly around 15 K and 20 K, respectively, where each energy becomes comparable to twice of the superconducting gap. The strong excitations are ascribed to a quantum rattling, or a band motion of hydrogen, which arises only if the number of potential minima is larger than two., Comment: 6 pages, 4 figures

An iron-based superconductor LaFeAsO$_{1-x}$H$_x$ (0 $\leq x \leq$ 0.6) undergoes two antiferromagnetic (AF) phases upon H doping. We investigated the second AF phase ($x$=0.6) using NMR techniques under pressure. At pressures up to 2 GPa, the ground state is a spin-density-wave state with a large gap; however, the gap closes at 4.0 GPa, suggesting a pressure-induced quantum critical point. Interestingly, the gapped excitation coexists with gapless magnetic fluctuations at pressures between 2 and 4 GPa. This coexistence is attributable to the lift up of the $d_{xy}$ orbital to the Fermi level, a Lifshitz transition under pressure.

Heterostructures having both magnetism and topology are promising materials for the realization of exotic topological quantum states while challenging in synthesis and engineering. Here, we report natural magnetic van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n that exhibit controllable magnetic properties while maintaining their topological surface states. The interlayer antiferromagnetic exchange coupling is gradually weakened as the separation of magnetic layers increases, and an anomalous Hall effect that is well coupled with magnetization and shows ferromagnetic hysteresis was observed below 5 K. The obtained homogeneous heterostructure with atomically sharp interface and intrinsic magnetic properties will be an ideal platform for studying the quantum anomalous Hall effect, axion insulator states, and the topological magnetoelectric effect., Comment: 40 pages, 15 figures

In the search for stable topological semimetals with clean band profiles, we have screened all the 3$d$ metal-intercalated transition-metal dichalcogenides (3dI-TMDCs) by performing hybrid-functional-based ab initio calculations. Two classes of topological materials featuring twelve Weyl nodes in the $k_z=0$ plane (without spin-orbit interactions) are identified: (a) time-reversal-breaking Weyl semimetals VT$_3$X$_6$ (ferromagnetic) and (b) spinless Weyl semimetals MnT$_3$X$_6$ (nonmagnetic), where T=Nb, Ta; X=S, Se. VNb$_3$S$_6$, prototypical of class (a), is half-metallic with only two bands crossing at the Fermi level to form Weyl nodes. MnNb$_3$S$_6$ in the nonmagnetic phase is essentially a spinless version of VNb$_3$S$_6$ featuring an equally clean and simple band profile. Although the space group symmetry (P6$_3$22) implies that the degeneracy between the two bands is lifted for $k$ away from the Weyl nodes, the gap remains extremely small ($\ll$ 0.1 meV) along a loop connecting the Weyl nodes. This quasi-nodal-line degeneracy is explained in terms of the quasi-mirror symmetry of the lattice, induced by the in-plane twofold rotation axes, and the specific orbital nature of the bands. 3dI-TMDCs are chemically and thermally stable stoichiometric compounds containing no toxic elements and are a viable platform for the study of topological condensed-matter physics., Comment: Revised to include a detailed discussion of the effect of spin-orbit interactions on the topology of VNb$_3$S$_6$. [See Figs. 2(d) and (e).] The other figures were also updated for enhanced clarity

Zinc-based nitride CaZn2N2 films grown by molecular beam epitaxy (MBE) with a plasma-assisted active nitrogen-radical source are promising candidates of next-generation semiconductors for light-emitting diodes and solar cells. This nitride compound has previously only been synthesized in a bulk form by ultrahigh-pressure synthesis at 5 GPa. Three key factors have been found to enable heteroepitaxial film growth: (i) precise tuning of the individual flux rates of Ca and Zn, (ii) the use of GaN template layers on sapphire c-plane as substrates, and (iii) the application of MBE with an active N-radical source. Because other attempts at physical vapor deposition and thermal annealing processes have not produced CaZn2N2 films of any phase, this rf-plasma-assisted MBE technique represents a promising way to stabilize CaZn2N2 epitaxial films. The estimated optical band gap is ~1.9 eV, which is consistent with the value obtained from bulk samples. By unintentional carrier doping, n- and p-type electronic conductions are attained with low carrier densities of the order of 1013 /cm3. These features represent clear advantages when compared with Zn-based oxide semiconductors, which usually have much higher carrier densities irrespective of their intentionally undoped state. The carrier mobilities at room temperature are 4.3 cm2/(Vs) for electrons and 0.3 cm2/(Vs) for hole carriers, which indicates that transport properties are limited by grain boundary scattering, mainly because of the low-temperature growth at 250 {\deg}C, which realizes a high nitrogen chemical potential., Comment: Accepted for publication in ACS Appl. Electon. Mater

High-critical-temperature (Tc) superconductivity at 48 K is reported for hydrogen-doped SmFeAsO epitaxial films on MgO single-crystal substrates. The key processes are pulsed laser deposition to grow undoped SmFeAsO epitaxial films and subsequent topotactic chemical reaction using CaH2 powders under evacuated silica-glass ampule atmosphere. Based on this post-deposition thermal annealing treatment that we have developed, a maximum hydrogen concentration x = ~0.35 was realized in SmFeAs(O1-xHx). Disordered hydrogen-substitution at O sites is experimentally confirmed directly by atomic-scale microstructural observations. Magnetization measurement validates the bulk nature of the high-Tc superconductivity in the films. This method will become an effective and general method to fabricate various high-quality oxyhydride epitaxial films.

Pulsed laser deposition, a non-equilibrium thin-film growth technique, was used to stabilize metastable tetragonal iron sulfide (FeS), the bulk state of which is known as a superconductor with a critical temperature of 4 K. Comprehensive experiments revealed four important factors to stabilize tetragonal FeS epitaxial thin films: (i) an optimum growth temperature of 300 {\deg}C followed by thermal quenching, (ii) an optimum growth rate of ~7 nm/min, (iii) use of a high-purity bulk target, and (iv) use of a single-crystal substrate with small in-plane lattice mismatch (CaF2). Electrical resistivity measurements indicated that none of all the films exhibited superconductivity. Although an electric double-layer transistor structure was fabricated using the tetragonal FeS epitaxial film as a channel layer to achieve high-density carrier doping, no phase transition was observed. Possible reasons for the lack of superconductivity include lattice strain, off-stoichiometry of the film, electrochemical etching by the ionic liquid under gate bias, and surface degradation during device fabrication.

The ternary nitride CaZn2N2, composed only of earth-abundant elements, is a novel semiconductor with a band gap of 1.8 eV. First-principles calculations predict that continuous Mg substitution at the Zn site will change the optical band gap in a wide range from ~3.3 eV to ~1.9 eV for Ca(Mg1-xZnx)2N2 (x = 0-1). In this study, we demonstrate that a solid-state reaction at ambient pressure and a high-pressure synthesis at 5 GPa produce x = 0 and 0.12, and x = 0.12-1 polycrystalline samples, respectively. It is experimentally confirmed that the optical band gap can be continuously tuned from ~3.2 eV to ~1.8 eV, a range very close to that predicted by theory. Band-to-band photoluminescence is observed at room temperature in the ultravioletfired region depending on x. A 2% Na doping at the Ca site of CaZn2N2 converts its highly resistive state to a p-type conducting state. Particularly, the x = 0.50 sample exhibits intense green emission with a peak at 2.45 eV (506 nm) without any other emission from deep-level defects. These features meet the demands of the III-V group nitride and arsenide/phosphide light-emitting semiconductors.

This paper reports that ~10-nm-thick FeSe thin films exhibit insulator-like behavior in terms of the temperature dependence of their electrical resistivity even though bulk FeSe has a metallic electronic structure that has been confirmed by photoemission spectroscopy and first-principles calculations. This apparent contradiction is explained by potential barriers formed in the conduction band. Very thin FeSe epitaxial films with various [Fe]/[Se] were fabricated by molecular beam epitaxy and classified into two groups with respect to lattice strain and electrical properties. Lattice parameter a increased and lattice parameter c decreased with increasing [Fe]/[Se] up to 1.1 and then a levelled off and c began to decrease at higher [Fe]/[Se]. Consequently, the FeSe films had the most strained lattice when [Fe]/[Se] was 1.1, but these films had the best quality with respect to crystallinity and surface flatness. All the FeSe films with [Fe]/[Se] of 0.8-1.9 exhibited insulator-like behavior, but the temperature dependences of their electrical resistivities exhibited different activation energies Ea between the Se-rich and Fe-rich regions; i.e., Ea were small (a few meV) up to [Fe]/[Se]=1.1 but jumped up to ~25 meV at higher [Fe]/[Se]. The film with [Fe]/[Se]=1.1 had the smallest Ea of 1.1 meV and exhibited an insulator-superconducting transition at 35 K with zero resistance under gate bias. The large Ea of the Fe-rich films was attributed to the unusual lattice strain with tensile in-plane and relaxed out-of-plane strains. The large Ea of films with [Fe]/[Se]>1.1 resulted in low mobility with a high potential barrier of ~50 meV in the conduction band for percolation carrier conduction compared with that of the [Fe]/[Se]=1.1 film (~17 meV). Therefore, the Fe-rich films exhibited remarkable insulator-like behavior similar to a semiconductor despite their metallic electronic structure.

Nanometer-sized particular structures are generated on the surfaces of FeSe epitaxial films directly after exposure to air; this phenomenon was studied in the current work because these structures are an obstacle to field-induced superconductivity in electric double-layer transistors using FeSe channel layers. Chemical analyses using field-effect scanning Auger electron spectroscopy revealed no clear difference in the chemical composition between the particular structures and the other flat surface region. This observation limits the possible origins of the particulate formation to light elements in air such as O, C, H, and N., Comment: Accepted for publication in J. Supercond. Nov. Magn

We develop a method to efficiently construct phase diagrams using machine learning. Uncertainty sampling (US) in active learning is utilized to intensively sample around phase boundaries. Here, we demonstrate constructions of three known experimental phase diagrams by the US approach. Compared with random sampling, the US approach decreases the number of sampling points to about 20%. In particular, the reduction rate is pronounced in more complicated phase diagrams. Furthermore, we show that using the US approach, undetected new phase can be rapidly found, and smaller number of initial sampling points are sufficient. Thus, we conclude that the US approach is useful to construct complicated phase diagrams from scratch and will be an essential tool in materials science., Comment: 8 pages, 4 figures

A high-throughput screening based on first-principles calculations was performed to search for new ternary inorganic electrides. From the available materials database, we identified three new thermodynamically stable materials (Li$_{12}$Mg$_3$Si$_4$, NaBa$_2$O and Ca$_5$Ga$_2$N$_4$) as potential electrides made by main group elements, in addition to the well known mayenite based electride (C12A7:$e^-$). Different from those conventional inorganic electrides in which the excess electrons play only the role of anions, the three new materials, resembling the electrides found in simple metals under high pressure, possess mixed ionic and metallic bonding. The interplay between two competing mechanisms, together with the different crystal packing motifs, gives rise to a variety of geometries in anionic electrons, and rich physical phenomena such as ferromagnetism, superconductivity and metal-insulator transition. Our finding here bridges the gap between electrides found at ambient and high pressure conditions., Comment: 10 pages, 8 figures

Iron-based superconductors can be categorized as two types of parent compounds by considering the nature of their temperature-induced phase transitions; namely, first order transitions for 122- and 11-type compounds and second-order transitions for 1111-type compounds. This work examines the structural and magnetic transitions (ST and MT) of CaFeAsH by specific heat, X-ray diffraction, neutron diffraction, and electrical resistivity measurements. Heat capacity measurements revealed a second-order phase transition accompanies an apparent single peak at 96 K. However, a clear ST from the tetragonal to orthorhombic phase and a MT from the paramagnetic to antiferromagnetic phase were detected. The structural (Ts) and N\'eel temperatures (TN) were respectively determined to be 95(2) and 96 K by X-ray and neutron diffraction and resistivity measurements. This small temperature difference, Ts - TN, was attributed to strong magnetic coupling in the inter-layer direction owing to CaFeAsH having the shortest lattice constant c among parent 1111-type iron arsenides. Considering that a first-order transition takes place in 11- and 122-type compounds with a short inter-layer distance, we conclude that the nature of the ST and MT in CaFeAsH is intermediate in character, between the second-order transition for 1111-type compounds and the first-order transition for other 11- and 122-type compounds.

We elucidate the magnetic phases and superconducting transition temperatures (Tc) in Sr2VFeAsO3-delta (21113V), an iron-based superconductor with a thick-blocking layer fabricated from a perovskite-related transition metal oxide. At low temperatures (T < 37.1 K), 21113V exhibited a superconducting phase in the range 0.031 =< delta =< 0.145 and an antiferromagnetic (AFM) iron sublattice in the range 0.267 =< delta =< 0.664. Mixed-valent vanadium exhibited a dominant AFM phase in 0.031 =< delta =< 0.088, and a partial ferrimagnetic (Ferri.) phase in the range 0.124 =< delta =< 0.664. The Ferri. phase was the most dominant at a delta value of 0.267, showing an AFM phase of Fe at T < 20 K. Increasing the spontaneous magnetic moments reduced the magnetic shielding volume fraction due to the superconducting phase. This result was attributed to the magnetic phase of vanadium, which dominates the superconductivity of Fe in 21113V. The Tc-delta curve showed two maxima. The smaller and larger of Tc maxima occurred at delta = 0.073 and delta = 0.145, respectively; the latter resides on the phase boundary between AFM and the partial Ferri. phases of vanadium. 21113V is a useful platform for verifing new mechanisms of Tc enhancement in iron-based superconductors., Comment: 34 pages, 10 figures, 2 tables, supplement information with 11 pages, 8 figures, 3 tables. accepted for publication, J. Phys.: Condens. Matter, Updated manuscript contains More references and readability. See http://iopscience.iop.org/article/10.1088/1361-648X/aaf7e0

Recent discoveries of topological phases realized in electronic states in solids have revealed an important role of topology, which ubiquitously appears in various materials in nature. Many well-known materials have turned out to be topological materials, and this new viewpoint of topology has opened a new horizon in material science. In this paper we find that electrides are suitable for achieving various topological phases, including topological insulating and topological semimetal phases. In the electrides, in which electrons serve as anions, the bands occupied by the anionic electrons lie near the Fermi level, because the anionic electrons are weakly bound by the lattice. This property of the electrides is favorable for achieving band inversions needed for topological phases, and thus the electrides are prone to topological phases. From such a point of view, we find many topological electrides, Y$_2$C (nodal-line semimetal (NLS)), Sc$_2$C (insulator with $\pi$ Zak phase), Sr$_2$Bi (NLS), HfBr (quantum spin Hall system), and LaBr (quantum anomalous Hall insulator), by using ab initio calculation. The close relationship between the electrides and the topological materials is useful in material science in both fields., Comment: 12 pages, 9 figures