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Das Pyoderma gangraenosum (PG) als idiopathische, ulzeros entzundliche Hauterkrankung mit variierenden klinischen Bildern hat eine geschatzte Inzidenz von 0,3/100 000 und ist aufgrund der unspezifischen Histologie vor allem eine klinische Ausschlussdiagnose. Die rasche Progredienz, sowie der durch das Pathergiephanomen oft fatale Verlauf nach chirurgischen Interventionen bedeuten eine therapeutische Herausforderung. Am Beispiel eines durch ein PG komplikationsreichen Verlaufs bei einer 47-jahrigen Patientin mit freier DIEP-Lappenplastik zur beidseitigen Mammarekonstruktion mochten wir auf diese oft unterschatzte Erkrankung aufmerksam machen. Zur beidseitigen Mammarekon­struktion erhielt eine 47-jahrige Patientin eine freie Doppel-DIEP-Lappenplastik, welche rechts aufgrund rezidivierender arterieller Thrombosen revidiert und schlieslich reseziert werden musste. Innerhalb von 48 Stunden entwickelte sich eine expandierende entzundliche Hautveranderung mit Nekrosenbildung. Bei Verdacht auf ein PG wurde eine i. v. Steroidtherapie begonnen. Nach 13 Tagen erfolgten ein erneutes Debridement und eine Spalthauttransplantation. Erst in dieser histologischen Untersuchung war der Befund mit der klinischen Verdachtsdiagnose eines Pyoderma gangraenosum vereinbar. Unter der eingeleiteten Steroidbehandlung konnten die Wunden stabilisiert und restdefektgedeckt werden. Nach 6-wochigem Aufenthalt konnte die Patientin schlieslich mit abgeheilten Wundverhaltnissen aber unbefriedigendem asthetischen Ergebnis entlassen werden. Bei unklaren, rasch progredienten Hautulzerationen im Rahmen chirurgischer Eingriffe sollte immer auch an ein Pyoderma gangraenosum gedacht werden. Insbesondere, da chirurgische Interventionen im akuten Stadium durch das Pathergiephanomen zu einer unkontrollierten Exazerbation fuhren konnen. Laborparameter und Histologie sind nicht spezifisch. Unter einer systemischen immunmodulierenden Therapie kann ein sequentielles chirurgisches Wundmanagement die Heilung jedoch beschleunigen.

During 30 months, 40 “septum-based” mammaplasties with a craniomedial pedicle were performed. This report aims to demonstrate the anatomic basics of the horizontal septum and the authors’ experience with the septum-based mammaplasty technique. A series of 40 consecutive patients underwent a “septum-based” mammaplasty. This technique uses a medial pedicle based on Wuringer`s horizontal septum, which is the main plain for the neural and vascular supply of the nipple–areolar complex (NAC). The mean nipple-to-sternal-notch distance was 32 cm (range, 24–43 cm). The mean resection weight was 648 g (range, 484–1,320 g), and the mean nipple elevation was 9.5 cm (range, 5–18 cm). There were no hematomas and no partial or complete NAC necroses. Minimal wound dehiscence at the T-junction was present in three cases (7.5%). The pre- and postoperative NAC sensibilities were comparable in all the patients. Based on Wuringer`s horizontal septum, a safe and well-vascularized mammaplasty is possible even with large resection weights and long nipple–areola distances, and NAC sensibility can be preserved. The reported technique combining excellent pedicle perfusion with a wide variety of breast shaping proved to be safe.

A novel average inductor current sensing circuit integrable in CMOS technologies is presented. It is designed for DC---DC converters using buck, boost, or buck-boost topologies and operating in continuous conduction mode at high switching frequencies. The average inductor current value is used by the DC---DC controllers to increase the light load power conversion efficiency (e.g., selection of the modulation mode, selection of the dynamic width of the transistors). It can also be used to perform the constant current charging phase when charging lithium-ion batteries, or to simply detect overcurrent faults. The proposed average inductor current sensing method is based on the lossless sensing MOSFET principle widely used in monolithic CMOS integrated DC---DC converters for measuring the current flowing through the power switches. It consists of taking a sample of the current flowing through the power switches at a specific point in time during each energizing and de-energizing cycle of the inductor. By controlling precisely the point in time at which this sample is taken, the average inductor current value can be sensed directly. The circuit simulations were done with the Cadence Spectre simulator. The improvements compared to the basic sensing MOSFET principle are a lower power consumption because no high bandwidth amplifier is required, and less noise emission because the sensing MOSFET is no more switched. Additionally, the novel average inductor current sensing circuit overcomes the low bandwidth limitation previously associated with the sensing MOSFET principle, thus enabling it to be used in DC---DC converters operating at switching frequencies up to 10 MHz and above.

Necrotizing soft-tissue infections such as necrotizing fasciitis continue to have a high morbidity and mortality. More and more, these difficult cases are being referred to burn centers for specialized wound and critical care treatment. The case of a necrotizing soft-tissue infection after a honeybee sting is reported. To the best of our knowledge, it is the first documented case of necrotizing fasciitis caused by invasive group A Streptococcus from a bee sting. A 56-year-old man was stung by a bee in the left upper gluteal region. The sting was removed by the patient. Within hours, erythema, swelling, itching, and pain developed. On day 7, after the bee sting, the patient was admitted to a general surgery department with progressive skin and soft-tissue necrosis around the hip and the upper left leg. Because of the rapidly deteriorating condition, the patient was referred to our burn ICU with the picture of a progressive necrotizing fasciitis. The skin necrosis required immediate epifascial necrectomy. Additionally local therapy with topical antiseptics was performed. The surface was temporarily covered with xenograft, definitive coverage was achieved with autologuous skin graft transplantation. Advancements in wound care and critical care, which have become standard in the treatment protocols of patients with necrotizing soft-tissue infections, have markedly improved the prognosis. However, these infections continue to be a source of high morbidity and mortality and significant healthcare resource consumption. These challenging patients are best served with prompt diagnosis, immediate radical surgical debridement, and aggressive critical care management. Referral to a burn center may help to provide best possible surgical intervention, wound care, and critical care management.

Mit der Verschiebung der Alterspyramide ist die Nachfrage an verjungenden Eingriffen stetig gewachsen. Die umfangreichen anatomischen Studien der letzten Jahre haben uns in der Chirurgie des alternden Gesichts und der Mamma ein besseres Verstandnis der anatomischen Strukturen und die Grundlage fur die Alterungsprozesse gegeben. Hieraus resultiert eine Vielzahl von neuen Eingriffen, die dem Chirurgen im Vorfeld zur Verfugung stehen. Die Kenntnis dieser anatomischen Grundlagen, die als Basis der Alterungsprozesse anzusehen sind, und die Diversitat an chirurgischen Eingriffen erlauben die Wiederherstellung eines naturlich wirkenden jugendlichen Gesichts, bei dem weniger die Straffung als die Neupositionierung der Gewebe im Vordergrund steht. Bei der Blepharoplastik haben die Techniken in der Vergangenheit im Wesentlichen die Zeichen des Alterungsprozesses im Sinne einer Camouflage verandert, weniger handelte es sich bei diesen Eingriffen um eine wirkliche anatomische Restauration. Mit den modernen Blepharoplastiktechniken werden eine Umverteilung von Fettgewebe und eine anatomische Restauration der alternden Strukturen angestrebt. Hierdurch werden stabile Langzeitergebnisse erzielt und sekundare Stigmata vermieden. Auch im Bereich der Mammachirurgie haben sich Konzepte durchgesetzt, die ein moglichst naturliches Ergebnis erzielen, dies gilt vor allem fur die Augmentation. Obwohl es keine einzelne Technik gibt, die man als die beste bezeichnen kann, gibt es doch fur jeden Patienten mit seiner ganz individuellen Anatomie und seinen personlichen Wunschen die fur ihn am besten geeignete Technik.

Polyethylene (PE) was irradiated with 63 keV Ar+ ions to the fluences from 1×1012 to 3×1015 cm−2 and then grafted at room temperature from water solution with amino acids (alanine, leucine). Using various spectroscopic techniques (UV-VIS, FTIR, RBS and EPR) it was shown that the amino acids penetrate into PE where they are eventually captured either on double bonds or on free radicals created by the ion irradiation. Grafting with amino acids in the whole specimen layer modified by irradiation is observed. The ion-beam-modified and amino-acid grafted PE is supposed to exhibit increased biocompatibility.

Polyethylene (PE) foils were modified by irradiation with ArE+ and XeE+ ions to different fluences and different physico-chemical properties of the irradiated PE were studied in relation to adhesion and proliferation of keratinocytes on the modified surface. Changes in the PE surface roughness were examined using the AFM technique, the production of conjugated double bonds and oxidized structures by UV-VIS and FTIR techniques respectively. The surface polarity was determined by measuring surface contact angle and two-point technique was used for the determination of PE sheet resistance. Adhesion and proliferation of keratinocytes was characterized using the MTT-test. The ion irradiation leads to creation of conjugated double bonds which, together with progressive carbonization, contribute to the observed decrease of sheet resistance. Oxidation of the irradiated PE surface layer during the ion implantation is observed. Besides oxidation, the PE surface polarity is affected by other factors. The observed increase of the PE surface roughness due to the ion irradiation is inversely proportional to the ion size. The adhesion and proliferation of keratinocytes on the ion irradiated PE is significantly higher than on the pristine PE. Distribution of results in keratinocyte cultivation and the number of cells is related to the ion fluence applied and to ion species as well.

Ferroelectric thin films of lead titanate (PbTiO3) and lead zirconate titanate (PZT) were grown in a cold-wall low-pressure chemical vapor deposition reactor on silicon substrates with diameters up to 150 mm using liquid metal organic precursors including a novel zirconium precursor. Film thickness ranged from 10 nm to 700 nm. The films were characterized regarding their electrical, optical, and structural properties depending on film composition and deposition conditions. In this paper, we report our results regarding composition effects, the electrical polarization behavior and optical properties like refractive indices and absorption coefficient, which were investigated by spectroscopic ellipsometry for a wide wavelength range. Furthermore some temperature dependent effects of the platinum electrodes are described.

Spectroscopic ellipsometry has gained increasing attention in semiconductor process control because the technique is nondestructive and noncontacting. This paper demonstrates the capability of spectroscopic ellipsometer to measure the thickness of conducting thin films of titanium silicide. Unlike cross section TEM measurement, this technique does not involve elaborate process of sample preparation. This technique does not require calibration and is used to determine thickness of silicide films from few tens of angstrom up to tens of nanometer. The thickness of titanium silicide film measured at a single point, using spectroscopic ellipsometer and TEM analysis differs by only 4%.

Thin TiSi2 films were prepared using conventional and advanced technological processing schemes. The formation of silicide films was monitored by a number of analytical techniques including 4-point probe, profilometry, X-ray diffraction, cross-sectional TEM, and atomic force microscopy. The data are compared with measurement results obtained by spectroscopic ellipsometry and by thermal wave analysis on the same samples. The capabilities of optical methods for measurement of silicide film parameters such as film thickness, film uniformity, and phase transition are evaluated. It is shown that spectral ellipsometry can be used for thickness measurement of thin suicide layers if appropriate models for data evaluation are used. Thermal wave analysis can be used for characterization of layer thickness uniformity as well as for phase formation monitoring. However, thermal wave analysis requires an appropriate calibration of the thermal wave signal as a function of desired measurement paramete rs. Both optical techniques used are fast, non-contact, and non-destructive and can therefore be used for in-line process control of silicide processing in semiconductor manufacturing.

Polyimide (PI) samples were irradiated with 200 keV Ar + ions to fluences from 5 X 10 13 -1 x 10 17 cm -2 and the concentration depth profiles of implanted Ar atoms as well as of carbon and oxygen atoms of the polymer matrix were determined using the Rutherford backscattering technique. The surface polarity, sheet resistivity, and thermoelectric power of PI samples were also determined as a function of the ion fluence and temperature. As a result of the ion irradiation, the polyimide surface layer is depleted of oxygen and enriched by carbon. The sheet resistivity exhibits a minimum at the ion fluence of 5 x 10 16 cm -2 and the temperature dependence of the sheet resistivity indicates the semiconducting character of irradiated PI and the variable range hopping mechanism of charge transport. The thermoelectric power of the PI samples irradiated to high fluences is small, of the order of μV/K, and independent of temperature. This behavior is typical for metals. The simultaneous appearance of metal and semiconducting properties is probably due to the complex structure of the PI surface layer modified by the ion irradiation.

The design and characterization of a tip control unit for an apertureless scanning near field optical microscope (ASNOM) is reported. To make the instrument operation easier, the cantilever control parts (piezo excitation of the cantilever vibration for the dynamic mode feedback and the parts necessary for the optical lever scheme of the vibration control) were placed in a separate detachable assembly. To suppress the influence of vibrations of the setup, the assembly was made lightweight. Good optical access to the ASNOM tip from various directions is provided in the system. High long-term mechanical stability of the system (~50 nm lateral drift in 18 hours) as well as low sensitivity to seismic vibrations (~400 pm RMS) is demonstrated. It is shown that external sound is not a main source of noise in the topography image (~200 pm RMS). The light field distribution (with its amplitude and phase) around the ASNOM tip was acquired by scanning the focal spot around the tip, and a high optical quality of the system is demonstrated.

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (

Ultra-thin cobalt silicide (CoSi2) was formed from 10 nm cobalt film by solid phase reaction of Co and Si by use of rapid thermal annealing (RTA). The Ge+ ion implantation through Co film caused the interface mixing of the cobalt film with the silicon substrate and resulted in a homogeneous silicide layer. XRD was used to identify the silicide phases that were present in the film. The metallurgical analysis was performed by RBS. XRD and RBS investigations showed that final RTA temperature should not exceed 800°C for thin (< 50 nm) CoSi2 formation.

The paper presents experimental results on the modification process in α-Fe surface layers after high-dose implantation. Slow positron beam, conversion Mossbauer spectroscopy, resonance nuclear reactions, measurements of microhardness, non-lubricated friction wear and friction coefficient in wear have been used. The relation of physico-chemical changes and defect structure to changes in operation characteristics of the modified and implanted α-Fe layer has been shown. Ti clusters and small dispersion carbides are formed in the surface of α-Fe after implantation, which increases microhardness and decreases the wear and friction coefficient by a factor of 2.5. Ordered phase Fe 3 Al, which undergoes partial amorphization with increasing dose is produced as a result of Al implantation. This also decreases wear and increases microhardness. The implantation of C ions did not show decreased wear even in the case of 8 × 10 17 cm −2 doses, though increased microhardness was found.

It was demonstrated in this paper that thermal wave analysis is capable of measuring two major parameters in the metallization processes of semiconductor manufacturing, metal layer thickness and temperature. A material of interest for which this method is well suited is Al on SiO2. The TW signal is high for thin aluminium layers and very sensitive to thickness variation. The thickness range which is of interest in semiconductor processing, can be measured with a repeatability of better than 1 % and absolute accuracy of a few nanometers depending on the calibration samples. The experimental results demonstrate that the TW system described above can also be used for accurate, fast and noncontacting temperature measurement, especially in the low temperature range with a high local resolution.

Defect structure and electrical characterization of boron and arsenic implanted layers has been investigated for implantation under athermal (light) excitation. This Photon Assisted (PA) implantation owes its specific properties to an additional electric field acting on charged particles including carriers and charged defects. It was shown that in case of n-type silicon this extra field draws charged vacancies and self-interstitials towards each other and, thus, diminishes transient diffusion of boron. This effect resulted in junctions which are about 20% shallower compared to conventionally processed reference wafers. Experiments using light of an Ar-ion laser and white light of a high pressure Xe are lamp were compared

Effective work function instability of high‐κ/metal gate MOS stacks after high temperature treatment results in device threshold voltage shifts and is one of the problems associated with the gate‐first integration of high‐κ dielectrics in the CMOS process flow. The exact reason for this instability is subject of intense debate. In this paper it is shown that a positive threshold voltage shift due to thermal treatment can be compensated by implanting the lanthanoids lanthanum or dysprosium into the high‐κ stack.

The impact of dose variations of protons implanted with energies in the MeV range on the concentration and depth distribution of hydrogen‐related shallow donors in float zone and Czochralski silicon after annealing at 470 °C is examined with spreading resistance probe measurements. For moderate proton doses up to 1014 cm−2, the measured effective carrier distribution in float zone silicon correlates with the calculated distribution of the primary radiation damage caused by the penetrating protons. With increasing doses above 1014 cm−2, however, the effective carrier distribution significantly deviates from the distribution of the primary defects. Furthermore, the shape of the induced profiles in float zone and Czochralski silicon differ considerably. The effective carrier concentration at the maximum of the induced donor profile exhibits a linear dependency on the implanted dose after annealing around 370 °C, whereas this dependency becomes clearly sublinear when annealing at 470 °C. A temperature depende...

A significant improvement of the light load conversion efficiency in integrated CMOS DC---DC converters using pulse-width modulation (PWM) at constant switching frequencies above 1 MHz can be obtained by implementing dynamic width controlling (DWC) of the power transistors. The parallel implementation of DWC uses equally sized power cells, each containing the power transistor and its gate driver stages. The power cells are connected together in a parallel arrangement to limit the propagation delays and to avoid the transmission gates used in serial implementations. Due to this, higher switching frequencies can be realized. Advanced simulations were performed with Cadence Spectre combined with Mathematica to investigate the conversion efficiency improvement potential offered by DWC. With DWC, an absolute increase of the light load conversion efficiency as high as 29% can be achieved for switching frequencies in the range 1---10 MHz. Further, a conversion efficiency higher than 80% can be provided over roughly two decades of load current for a DC---DC converter operating at a switching frequency of 10 MHz. Experimental results obtained from a synchronous buck converter designed in a 0.18 μm CMOS technology and switched at 2 MHz in continuous conduction mode (CCM) have demonstrated an improvement of the light-load conversion efficiency of about 25%.

Aim: Adipogenous tissue derived stem cells (ADSC) are available in abundance in the human body and can differentiate in the presence of lineage-specific induction factors in myogenic, adipogenic, chondrogenic and osteogenic cells. The aim of this study was to evaluate the impact of osteogenic induced ADSC’s (O-ADSC) on revascularization and cellular repopulization of avital cortical bone employing a vascularised bovine scaffold. Methods: An inguinal arterio-venous bundle was dissected in the groin of female white New Zealand rabbits (n = 6) and placed centrally inside an O-ADSC seeded scaffolds via a central drill hole. In the same surgical session avital cortical matrix from a donor rabbit was finally placed over this construct. Unseeded scaffolds, that were implanted and treated in the same fashion served as a controls (n = 6). To prevent external revascularization, all constructs were wrapped in silicon foil and finally implanted in the rabbits groin. Three months later, the constructs were explanted and checked for revascularization of a) the scaffold b) the surrounding cortical matrix. Histological stainings to obtain data on cell growth, cellular repopulization of the scaffold and the cortical bone, inflammation parameter were carried out. Results: O-ADSC seeded scaffolds showed a significant increase in new vessel formation in the scaffold as well as in the cortical matrix compared to unseeded scaffolds. Furthermore, new vital osteocytes as a sign of cellular repopularization inside the cortical matrix were found only in the treatment group. Conclusion: The presences of O-ADSC significantly induce neovascularisation and osteocytic repopulization of avital cortical bone matrix as opposed to unseeded scaffolds in a rabbit modell. Hence, this model might be of great value for future bone tissue engineering research and for reconstruction of large bone defects.

Surface analytical methods as TXRF (Total Reflection X-Ray Fluorescence), VPD-AAS (Vapor Phase Decomposition-Atomic Absorption Spectroscopy) and VPD-TXRF are powerful techniques for analyzing metallic impurities detrimental for semiconductor manufacturing. These techniques will be discussed and applications, which aim at the identification of contamination sources, are presented.

The diffusion of platinum in silicon is described by the kick-out and by the dissociative mechanism. The resulting set of four coupled differential equations is solved numerically without any simplification. The authors find that the concentration of substitutional platinum is strongly influenced by the initial concentration of vacancies. As a result of their work, they suggest a complete set of parameters which describes the diffusion of platinum in silicon in the temperature range from 700 to 950 o C

The transforming growth factor-beta (TGF-beta) has been identified as an important component of wound healing. Recent developments in molecular therapy offer good prospects for the modulation of wound healing, specifically those targeting TGF-beta. The aim of this study was to analyze the effect of TGF-beta targeting on the expression of angiogenic vascular endothelial growth factor (VEGF), a key regulator of angiogenesis and in vitro angiogenic activity in fibroblasts isolated from radiation-induced chronic dermal wounds. The expression of angiogenic VEGF in tissue samples from radiation-induced chronic dermal wounds was investigated by immunohistochemistry and microarray technique. The effect of TGF-beta targeting using antisense oligonucleotides on the expression of VEGF in isolated fibroblasts was analyzed by ELISA and multiplex RT-PCR. Human endothelial cells (ECs) were grown in conditioned medium produced from the treated fibroblasts. EC migration was measured using a modified Boyden chamber; EC tube formation was analyzed under a light microscope. Immunohistochemical investigation and microarray analysis demonstrated a decreased expression of VEGF protein and mRNA in tissue samples from radiation-induced chronic dermal wounds compared to normal human skin. Antisense TGF-beta oligonucleotide treatment significantly up-regulated VEGF secretion in vitro. Addition of conditioned medium from TGF-beta antisense-treated fibroblasts resulted in an increase in EC cell migration and tube formation. In conclusion, our results demonstrate that TGF-beta antisense oligonucleotide technology may be a potential therapeutic option for stimulation of angiogenesis in radiation-induced dermal wounds.

Chronic, nonhealing wounds and their therapy are not only a medical problem but a severe economic one as well. Such wounds have a great effect on quality of life. Basic research has enhanced our understanding of the stimulation and inhibition of wound healing and provides the basis for introducing new and innovative treatment methods. This paper reviews the most relevant in- and extrinsic factors that disturb physiologic wound healing to result in chronic nonhealing wounds. In addition, molecular intervention modalities targeting various aspects of wound repair are demonstrated.

Transforming growth factor-beta (TGF-beta) has been identified as an important component of wound healing. Recent developments in molecular therapy offer exciting prospects for the modulation of wound healing, specifically those targeting TGF-beta. The purpose of this study was to analyze the effect of TGF-beta targeting on the expression of matrix metalloproteinases (MMPs) in fibroblasts isolated from radiation-induced chronic dermal wounds.The expression of MMPs in tissue samples from radiation-induced chronic dermal wounds was investigated by immunohistochemistry and microarray technique. The effect of TGF-beta targeting using antisense oligonucleotides on the expression of MMPs in isolated fibroblasts was analysed by ELISA and multiplex RT-PCR.Immunohistochemical investigation and microarray analysis demonstrated an increased expression of MMP protein and mRNA in tissue samples from radiation-induced chronic dermal wounds compared to normal human skin. Antisense TGF-beta oligonucleotide treatment significantly down-regulated MMP secretion in vitro.TGF-beta antisense oligonucleotide technology may be a potential therapeutic option for the inhibition of proteolytic tissue destruction in radiation-induced chronic wounds.

Gynecomastia is a potential side effect of hormone therapy for prostate cancer. In large, randomized, placebo controlled studies approximately 50% or more of patients with prostate cancer experienced gynecomastia attributable to various mechanisms. Although it is mostly reported as mild to moderate, gynecomastia is one of the reasons most frequently cited for premature discontinuation of such treatment. Prophylactic radiotherapy and prophylactic tamoxifen have been shown to decrease the incidence of hormone-induced gynecomastia; nevertheless, there are still cases of refractory gynecomastia, and in these plastic surgery is needed for correction. Gynecomastia is a benign enlargement of the male breast, requiring no treatment unless it is a source of embarrassment and/or distress for the adolescent or man affected. The indications for surgical treatment of gynecomastia are founded on two main objectives: restoration of the male chest shape and diagnostic evaluation of suspected breast lesions. The authors believe that the complete circumareolar technique with no further scarring creates the best aesthetic results with fewer complications. When this is used in combination with liposuction very pleasing aesthetic results can be achieved.

Layers of silicon nanoparticles with resistivity down to 10 mΩcm are demonstrated using chemical and thermal treatment as well as ion implantation. Morphology and crystallinity of the layers are characterized using AFM and XRD. After chemical and thermal treatment AFM measurement revealed a fine grain structure, where the grains are of good crystallinity as measured by XRD. Implantation of 5.1015 cm−2 arsenic at 100 keV yields partially amorphous layers that can be recrystallized by post implantation anneal. By this process, surface roughness of layers increases as grain growth takes place.

With the replacement of traditional polysilicon and silicon dioxide by metal gates and high‐k dielectrics, respectively, in the MIS gate stack for the 45 nm technology node, higher than expected device threshold voltages have been observed due to the effect of Fermi‐level pinning. While the debate as to the exact cause of Fermi‐level pinning is ongoing, several attempts (capping layers, new gate metal compositions) have been made to curb this effect. In this paper, the tuning of metal gate work function by ion implantation is investigated as a tool for controlling the threshold voltage. Lanthanide incorporation is used to achieve a flat‐band voltage shift of more than‐1 V for n‐MOS capacitors. It is shown that by adjusting dose and energy, the flat‐band voltage shift can be tuned to a desired value, without substantial damage to the insulating quality of the gate. This translates to an effective shift in the threshold voltage.

Angular distributions of ion sputtered germanium and silicon atoms are investigated within this work. Experiments are performed for the case of grazing ion incidence angles, where the resulting angular distributions are asymmetrical with respect to the polar angle of the sputtered atoms. The performed experiments are compared to Monte‐Carlo simulations from different programs. We show here an improved model for the angular distribution, which has an additional dependence of the ion incidence angle.

The demand for a younger appearance is increasing as the average age of the population increases. Extensive anatomic studies in recent years have improved for facial and breast reconstruction the understanding of anatomic structures and the basis of the aging process. Numerous new surgical techniques have resulted. This understanding of the anatomy of aging and the diversity of surgical methods have made the attainment of naturally young facial appearance more easily possible, in which repositioning of the tissue plays a more important role than lifting. In the past, plastic surgery of the eyelids aimed primarily at hiding the aging process, not at true anatomic restoration. Modern techniques in this field aim more toward redistribution of fatty tissues and the anatomic restoration of aging structures. In this way long-term results are stabilized and secondary stigmata can be avoided. New concepts have also been established in breast surgery that allow more natural results, particularly in augmentation. Although no single method may be designated as superior, there still exists an optimal technique suited to every patient's anatomy and personal wishes.

An efficient medical documentation is mandatory for a trauma-oriented department in the DRG environment. Besides the continuously increasing clinical/administrative demands, the additional documentation for quality assurance, clinical studies, and research requires additional efforts. Standard solutions are only partially effective. Especially in hand surgery there is a high demand for sophisticated clinical documentation, represented by a wide variety of classifications in diagnosis and therapy. The standard documentation tools lack accuracy. The development of a software tool that defines administrative/business processes and simultaneously generates clinical and administrative information was the goal of this project.With a standard medical terminology, an innovative semantic network, and a completely new graphical user interface, it was possible to develop and introduce a software program specifically adjusted for hand surgery. This program facilitated for the first time a single-stage acquisition of clinically relevant scientific data and the simultaneous generation of DRG, quality assurance, and administrative data relevant for the hospital's revenues.The newly developed software tool is a step forward into a new dimension of medical software, obviating the need for multi/documentation and significantly improving the quality of clinically relevant medical data.

In this study, A nonlinear least squares optimization algorithm is used for extracting Silicon carbide Schottky parameters of the single model is presented Parameters values were extracted using this method from experimental characteristics collected .from Tungsten (W), Nickel (Nt) and Molybdenum (Mo) Schottky on 4H-SiC under forward and reverse bias and at different temperatures. The method is found to be reliable and accurate in situations where the model is a good approximation of Schottky diode performance. The diodes showed a barrier height of ϕb = 1.013eV for Mo and ϕb = 1.15 eV for Wand ϕb = 1.57 eV for Ni. The diodes showed also a series resistance in the range of 6 Ω to 15 Ω and a shunt conductance in the range of 10-12 S to 10-11 S The ideality factor is close to unity. Indications are given on the validity of the used technique and its main limitations.

This paper will discuss an investigation of the speed power relations of oxide-isolated subnanosecond logic gate circuits (ECL and E2CL) compared with double-diffused circuits. Under optimizing aspects, with respect to propagation delay, data of double-implanted integrated bipolar transistors and circuit performance will be given, dependent on implantation parameters.

Polyethylene (PE) foils were modified by irradiation with Ar+ and Xe+ ions to different fluences and different physico-chemical properties of the irradiated PE were studied in relation to adhesion and proliferation of keratinocytes on the modified surface. Changes in the PE surface roughness were examined using the AFM technique, the production of conjugated double bonds and oxidized structures by UV-VIS and FTIR techniques respectively. The surface polarity was determined by measuring surface contact angle and two-point technique was used for the determination of PE sheet resistance. Adhesion and proliferation of keratinocytes was characterized using the MTT-test. The ion irradiation leads to creation of conjugated double bonds which, together with progressive carbonization, contribute to the observed decrease of sheet resistance. Oxidation of the irradiated PE surface layer during the ion implantation is observed. Besides oxidation, the PE surface polarity is affected by other factors. The observed increase of the PE surface roughness due to the ion irradiation is inversely proportional to the ion size. The adhesion and proliferation of keratinocytes on the ion irradiated PE is significantly higher than on the pristine PE. Distribution of results in keratinocyte cultivation and the number of cells is related to the ion fluence applied and to ion species as well.

The influence of photoresist pattern on charging damage of gate oxides during high current arsenic implantation is studied. Metal-oxide-semiconductor (MOS) capacitors of 10 /spl mu/m/sup 2/ active area and 4.5 nm oxide thickness connected with various types of poly antennas and resist patterns on top were processed, whereby the resist overlapped and/or enclosed the gate electrode during ion implantation. The evaluation of the devices was performed by leakage current and charge to breakdown (Qbd) measurements. The influence of resist size, perimeter, and coverage of polyelectrodes is described in detail.

The single crystal growth of Si-Ge alloy was studied in germanium implanted silicon substrate. Ge+ ions were implanted on , p-type silicon substrate at a dose of 1016 cm-2. As-implanted samples were annealed sequentially at a temperature of 700 – 1000°C for different times in an RTA system to crystallise the amorphous layer. The SNMS technique was used to determine the compositional analysis, and RBS in the channelling mode was performed to characterise the samples.

The localized impurity incorporation during 30 keV Ga/sup +/ FIB processing such as physical etching and gas assisted etching with iodine gas has been investigated using the RBS mapping images by a 300 keV Be/sup 2+/ microprobe with a beam spot size of 80 nm. Sputtering process simulation using the TRIDYN code was performed to compare the etching rate and residual Ga atoms with those by experiment. Residual Ga atoms were found to distribute at and nearby the bottom of the etched area due to implantation and redeposition from the Ga FIB. The residual Ga concentration increased with the increase in ion dose up to 4/spl times/10/sup 16/ Ga/sup +//cm/sup 2/ due to the implantation, while above 1/spl times/10/sup 17/ Ga/sup +//cm/sup 2/ the Ga concentration gradually saturated due to the beginning of sputtering.

SOI-SIMNI films were formed by different methods. The wafers were evaluated by means of IR, X-ray, SR, Hall-effect and DLTS studies. The three peak coefficients of IR spectra were calculated using our experimental data. A new nondestructive method is suggested to determine the thickness of a buried Si/sub 3/N/sub 4/ layer in a SOI-SIMNI film with IR spectra measurements. The X-ray diffraction lines were used to analyse the structure of the SOI-SIMNI films. The X-ray results proved that the buried silicon nitride layers are partly polycrystal /spl alpha/-Si/sub 3/N/sub 4/. The unit-cell contents are Si/sub 12/N/sub 16/ (28 atoms with hexagonal structure). Hall-effect measurements (4-300 K) show that in some SIMNI films, the carrier concentration of the surface silicon layers is much higher than the virgin substrate silicon; and the DLTS results indicated that there are some deep level defects E/sub t/=0.152 or 0.392 eV in the n-Si(100) surface layers of SOI-SIMNI films.

Ultra-thin CoSi/sub 2/ films were prepared from 10 nm sputtered deposited Co on Si using RTA. The distribution of As ions implanted into thin layers of CoSi/sub 2/ on monocrystalline Si and out-diffusion into Si substrate during furnace annealing and RTP were investigated. Ultra-shallow junctions (x/sub j/

The standard model for simulation of ion implantation into amorphous materials based on the LSS concept of ion penetration [1] remained a reliable work horse for the simulation of ion implantation for a long time, but recent accurate experimental measurements of the implantation profiles in non-crystalline materials (photoresist, amorphous carbon, pre-amorphized silicon) indicated systematic deviations of the measured profiles from the predictions of that standard model. The experimentally measured implantation profiles are usually broader than predictions of simulations based on the amorphous material model, and the relative profile broadening is especially significant for heavy ions at elevated implantation energies. Several physical effects may come in question to explain the broadening of the implantation profiles: experimental uncertainty during the profile analysis, radiation enhanced diffusion during ion implantation, deficiency of the physical model for ion-atomic interaction. The high accuracy of the measurements and the fact that the observed profile broadening is independent of the chemical nature of the target atoms and ions speaks in favour of the last assumption about the physical background of these deviations between the model and experiment.