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The quality of interfaces regrown by organometallic chemical vapor deposition is evaluated from the electrical characteristics of In0.53Ga0.47As/InP p‐n heterojunction diodes. The I‐V curves are undistinguishable from those of junctions obtained by continuous growth, with ideality factors η≊1.1 and no observable contribution from interface recombination in the measured current range. An upper limit of 200 cm/s is obtained for the interface recombination velocity. The results show that high‐quality interfaces can be obtained in spite of prior air exposure. The technique can be used for the realization of regrown heterojunction bipolar transistors.