102 results on '"H, Shtrikman"'
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2. In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method
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H. Shtrikman, A. K. Fung, P. Paul Ruden, John D. Albrecht, and M. I. Nathan
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Stress (mechanics) ,chemistry.chemical_compound ,Materials science ,Condensed matter physics ,chemistry ,Electrical resistivity and conductivity ,Contact resistance ,Doping ,General Physics and Astronomy ,Heterojunction ,Piezoelectricity ,Sheet resistance ,Gallium arsenide - Abstract
Transmission line method patterns were fabricated on AlGaAs/GaAs heterostructures to measure the effect of uniaxial stress on the heterojunction two-dimensional electron gas resistivity and the contact resistance. Uniaxial compressive stress was applied in the [110] and [110] directions of heterojunctions fabricated on (001)-oriented GaAs substrates. Fitting the measured data to a lumped resistor model yielded normalized sheet resistivity stress coefficients of −3.2%/kbar and 12.6%/kbar for stress in the [110] and [110] directions, respectively. From these coefficients we obtain a value for the piezoelectric constant e14 of Al0.4Ga0.6As to be −0.26 C/m2, which when linearly extrapolated to AlAs gives −0.40 C/m2 compared to the value −0.225 C/m2 calculated by Hubner [Phys. Status Solidi B 57, 627 (1973)].
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- 1998
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3. Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors
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M. I. Nathan, P. Paul Ruden, John D. Albrecht, L. Cong, A. K. Fung, and H. Shtrikman
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Materials science ,Condensed matter physics ,business.industry ,Transconductance ,General Physics and Astronomy ,Substrate (electronics) ,Piezoelectricity ,Gallium arsenide ,Threshold voltage ,Stress (mechanics) ,chemistry.chemical_compound ,chemistry ,Optoelectronics ,Field-effect transistor ,business ,Voltage - Abstract
The current voltage relationships of AlGaAs/GaAs modulation doped field effect transistors (MODFETs) were measured as a function of applied uniaxial stress. Stresses in the [110] and [110] directions on MODFETs that were grown on a (001) substrate produced threshold shifts of opposite sign. Stresses in [110] and [110] directions resulted in threshold voltage pressure coefficients of −15 and 64 mV/Kbar, respectively. The asymmetric shifts in the threshold voltages are attributed to piezoelectric effects. In addition, stress induced changes in the slopes of the transconductance versus gate-to-source voltage relationships were also measured. For stresses in the [110] and [110] directions, the dependencies were 0.4 and −0.7 mS/(VKbar), respectively.
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- 1997
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4. Anisotropic mobility and roughness scattering in a 2D electron gas
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H Shtrikman, Y Markus, U Meirav, and Boris Laikhtman
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Magnetoresistance ,Condensed matter physics ,Scattering ,Plane (geometry) ,Chemistry ,Surface finish ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Electric field ,Materials Chemistry ,Electrical and Electronic Engineering ,Diffusion (business) ,Anisotropy ,Fermi gas - Abstract
We study the mobility of a two-dimensional electron gas (2DEG) which forms at an inverted GaAs/AlAs interface, in a structure where a back gate and a front gate are both used to modify the density of the 2DEG. The availability of two different control voltages provides a special opportunity to gain insight into the scattering mechanisms. We find that we can induce a significant change in the mobility, at a fixed density, by changing the interface roughness scattering, which depends on the perpendicular electric field acting on the 2DEG. We also find different mobility changes for current flowing in different directions in the plane of the 2DEG. We conclude that the roughness of the interface where the 2DEG resides is anisotropic, and it is responsible for the consistent anisotropy of the mobility in the (100) plane. We also develop a theoretical framework to calculate scattering due to anisotropic roughness.
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- 1994
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5. Imaging and magnetotransport in superconductor/magnetic dot arrays
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Daniel H. Reich, Chia-Ling Chien, H. Shtrikman, D. M. Silevitch, and Stuart B. Field
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Physics ,Scanning Hall probe microscope ,Scanning probe microscopy ,Lattice constant ,Flux pinning ,Condensed matter physics ,Quantum dot ,Condensed Matter::Superconductivity ,General Physics and Astronomy ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Type-II superconductor ,Square lattice ,Pinning force - Abstract
Magnetoresistance and scanning Hall probe microscopy studies of Nb-film/Ni-dot structures are reported. The dots act as pinning sites for superconducting vortices. The transport measurements focus on the effects of introducing disorder into the positions of the pinning lattice near the superconducting critical temperature Tc in structures with 250 nm diameter Ni dots randomized about an ideal square lattice with lattice constant a=560 nm. Features observable in the ordered arrays at higher multiples of the matching field H0=Φ0/a2 are washed out in the disordered arrays, but those at H0 remain. Scanning Hall probe microscope images were taken of the vortex configurations at fields up to 1.2H0 in ordered arrays of 1-μm-diameter dots on a 5.2 μm×4 μm rectangular lattice. These show that despite the relatively weak pinning of the magnetic dots, ordering commensurate with the dot lattice occurs even for fields below H0. Both transport and imaging studies point to the importance of interstitial vortices in dete...
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- 2001
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6. Multiple changes of order of the vortex melting transition in Bi2Sr2CaCu2O8 with dilute columnar defects
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T, Verdene, H, Beidenkopf, Y, Myasoedov, H, Shtrikman, M, Rappaport, E, Zeldov, and T, Tamegai
- Abstract
A low concentration of columnar defects is reported to transform a first-order vortex lattice melting line in Bi2Sr2CaCu2O8 crystals into alternating segments of first- and second-order transitions separated by two critical points. As the density of columnar defects is increased, the critical points shift apart and the range of the intermediate second-order transition expands. The measurement of equilibrium magnetization and the mapping of the melting line down to 27 K was made possible by employment of the shaking technique.
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- 2008
7. Electrostatic electron lens in the ballistic regime
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Corwin Paul Umbach, Moty Heiblum, U. Sivan, and H. Shtrikman
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Lens (optics) ,Physics ,law ,Modulation ,Ballistic conduction ,Ballistic regime ,Dielectric ,Electron ,Atomic physics ,Fermi gas ,Spatial modulation ,law.invention - Abstract
Electrostatic focusing of ballistic electrons in a high-mobility two-dimensional electron gas is discussed and experimentally demonstrated. The focusing is achieved by a spatial modulation of the electrostatic potential along the electrons' trajectories, in analogy with the modulation of the dielectric constant in conventional light-wave optics.
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- 1990
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8. Interplay of anisotropy and disorder in the doping-dependent melting and glass transitions of vortices in Bi2Sr2CaCu2O 8+delta
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H, Beidenkopf, T, Verdene, Y, Myasoedov, H, Shtrikman, E, Zeldov, B, Rosenstein, D, Li, and T, Tamegai
- Abstract
We study the oxygen doping dependence of the equilibrium first-order melting and second-order glass transitions of vortices in Bi2Sr2CaCu2O 8+delta. Doping affects both anisotropy and disorder. Anisotropy scaling is shown to collapse the melting lines only where thermal fluctuations are dominant. Yet, in the region where disorder breaks that scaling, the glass lines are still collapsed. A quantitative fit to melting and replica symmetry-breaking lines of a 2D Ginzburg-Landau model further reveals that disorder amplitude weakens with doping, but to a lesser degree than thermal fluctuations, enhancing the relative role of disorder.
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- 2006
9. Equilibrium First-Order Melting and Second-Order Glass Transitions of the Vortex Matter inBi2Sr2CaCu2O8
- Author
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Haim Beidenkopf, Tsuyoshi Tamegai, Ernst Helmut Brandt, Baruch Rosenstein, Nurit Avraham, Eli Zeldov, H. Shtrikman, and Y. Myasoedov
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High-temperature superconductivity ,Materials science ,Condensed matter physics ,General Physics and Astronomy ,Tourbillon ,Vortex ,law.invention ,Condensed Matter::Soft Condensed Matter ,Crystal ,Magnetization ,law ,Glass transition ,Phase diagram ,Line (formation) - Abstract
The thermodynamic phase diagram of Bi2Sr2CaCu2O8 was mapped by measuring local equilibrium magnetization M(H,T) in the presence of vortex shaking. Two equally sharp first-order magnetization steps are revealed in a single temperature sweep, manifesting a liquid-solid-liquid sequence. In addition, a second-order glass transition line is revealed by a sharp break in the equilibrium M(T) slope. The first- and second-order lines intersect at intermediate temperatures, suggesting the existence of four phases: Bragg glass and vortex crystal at low fields, glass and liquid at higher fields.
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- 2005
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10. Equilibrium first-order melting and second-order glass transitions of the vortex matter in Bi2Sr2CaCu2O8
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H, Beidenkopf, N, Avraham, Y, Myasoedov, H, Shtrikman, E, Zeldov, B, Rosenstein, E H, Brandt, and T, Tamegai
- Abstract
The thermodynamic phase diagram of Bi2Sr2CaCu2O8 was mapped by measuring local equilibrium magnetization M(H,T) in the presence of vortex shaking. Two equally sharp first-order magnetization steps are revealed in a single temperature sweep, manifesting a liquid-solid-liquid sequence. In addition, a second-order glass transition line is revealed by a sharp break in the equilibrium M(T) slope. The first- and second-order lines intersect at intermediate temperatures, suggesting the existence of four phases: Bragg glass and vortex crystal at low fields, glass and liquid at higher fields.
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- 2005
11. Long-range spatial correlations in the exciton energy distribution in GaAs/AlGaAs quantum wells
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Y, Yayon, A, Esser, M, Rappaport, V, Umansky, H, Shtrikman, and I, Bar-Joseph
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Variations in the width of a quantum well (QW) are known to be a source of broadening of the exciton line. Using low temperature near-field optical microscopy, we have exploited the dependence of exciton energy on well width to show that in GaAs QWs, these seemingly random well-width fluctuations actually exhibit well-defined order-strong long-range correlations appearing laterally, in the plane of the QW, as well as vertically, between QWs grown one on top of the other. We show that these fluctuations are correlated with the commonly found mound structure on the surface. This is an intrinsic property of molecular beam epitaxial growth.
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- 2002
12. Abrupt Transition between Thermally-Activated Relaxation and Quantum Tunneling in a Molecular Magnet
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K. M Mertes, Y Zhong, M. P Sarachik, Y Paltiel, H Shtrikman, E Zeldov, E Rumberger, D. N Hendrickson, and G Christou
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Physics ,Molecular magnets ,Condensed matter physics ,Condensed Matter - Mesoscale and Nanoscale Physics ,Relaxation (NMR) ,General Physics and Astronomy ,FOS: Physical sciences ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Magnetic field ,Magnetic anisotropy ,Magnetization ,0103 physical sciences ,Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ,Magnetic relaxation ,Hall effect sensor ,010306 general physics ,0210 nano-technology ,Quantum tunnelling - Abstract
We report Hall sensor measurements of the magnetic relaxation of Mn$_{12}$ acetate as a function of magnetic field applied along the easy axis of magnetization. Data taken at a series of closely-spaced temperatures between 0.24 K and 1.4 K provide strong new evidence for an abrupt ``first-order'' transition between thermally-assisted relaxation and magnetic decay via quantum tunneling., Comment: 4 pages, including 7 figures
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- 2000
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13. Coupled electron-hole transport
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Paul M. Solomon, H. Shtrikman, and U. Sivan
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Materials science ,Condensed matter physics ,Electrical resistivity and conductivity ,Scattering ,Coulomb ,General Physics and Astronomy ,Electron ,Electron hole ,Molecular physics ,Quantum tunnelling ,Electrical contacts ,Order of magnitude - Abstract
We report on transport measurements in a novel system composed of two parallel 2D electron and hole gases separated by a barrier which is high enough to prevent tunneling and recombination while thin enough to allow for strong interlayer Coulomb interaction. Separate electrical contacts to each layer and independent control of both carrier densities facilitate a detailed study of the electron-hole interaction. Current driven in one layer is found to induce opposite current in the other layer. The measured electron-hole momentum-transfer rate is a factor of 5 to an order of magnitude larger than in previous experiments on electron-electron scattering and calculations based on Coulomb scattering theory.
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- 1992
14. Long mean free path of hot electrons selectively injected to higher subbands
- Author
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Moty Heiblum, Jeffrey A. Kash, B. Laikhtman, Corwin Paul Umbach, H. Shtrikman, U. Sivan, and Amir Yacoby
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Physics ,Condensed matter physics ,Orders of magnitude (time) ,Mean free path ,General Physics and Astronomy ,Fermi energy ,Heterojunction ,Atomic physics ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Fermi gas ,Kinetic energy ,Electron transport chain ,Magnetic field - Abstract
The long hot-electron mean free path observed by Sivan, Heiblum, and Umbach in high-mobility 2D electron-gas heterostructures is explained by electron transport in the second subband. Our estimates show that the mean free path in the second subband is longer by 2 orders of magnitude than that in the first subband. New magnetic-focusing measurements reveal hot-electron velocities lower than the Fermi velocity, as expected for a higher-subband transport. The electrostatic potential near a biased constriction used as the hot-electron injector is shown to induce nonadiabatic intersubband transfer.
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- 1990
15. Calculation of the phase diagram of the Pb-Sn-Te system in the (Pb+Sn)-rich region
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H. Shtrikman, N. Tamari, and S. Szaplro
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Solid-state physics ,Analytical chemistry ,chemistry.chemical_element ,Mineralogy ,Solidus ,Liquidus ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,chemistry ,Materials Chemistry ,Electrical and Electronic Engineering ,Tin ,Tellurium ,Phase diagram - Abstract
The phase diagram of the Pb-Sn-Te system in the (Pb+Sn)-rich region was calculated using the modified model of regular associated solutions (RAS). The calculations were based on our experimentally determined liquidus temperatures and solid compositions using the DTA and LPE techniques. The calculated liquidus temperatures and solidus composition surfaces are in good agreement with our experimental data and in reasonable agreement with the data obtained by others.
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- 1981
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16. Characteristics of tin and cadmium doping in liquid‐phase epitaxial grown InGaAsP
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A. A. Ballman, J. Degani, N. Tamari, and H. Shtrikman
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Photoluminescence ,Materials science ,Dopant ,business.industry ,Inorganic chemistry ,Doping ,Physics::Optics ,General Physics and Astronomy ,chemistry.chemical_element ,Double heterostructure ,Epitaxy ,Condensed Matter::Materials Science ,Lattice constant ,chemistry ,Impurity ,Condensed Matter::Superconductivity ,Optoelectronics ,Condensed Matter::Strongly Correlated Electrons ,Tin ,business - Abstract
The characteristics of tin and cadmium doping of liquid‐phase epitaxial grown InGaAsP layers have been investigated. A change in the solid composition of the quaternary is introduced as a result of the perturbation of the liquid solution composition by the dopants. This leads to a change in the lattice constant and a shift of the photoluminescence peak wavelength of the doped layers. Impurity band formation and band filling enhance the shift of the peak wavelength towards shorter wavelength in the case of tin doping while it substantially counteracts this shift in the case of cadmium. The critical carrier concentration for obtaining maximum luminescence efficiency was determined for the two dopants and the results are consistent with previously published results on InGaAsP/InP double heterostructure lasers. Unintentionally doped InGaAsP layers have also been examined.
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- 1985
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17. LPE growth of Pb1-xSnxTe layers on metal-etched substrates
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H. Shtrikman and N. Tamari
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Inorganic Chemistry ,Metal ,Morphology (linguistics) ,Materials science ,visual_art ,Materials Chemistry ,visual_art.visual_art_medium ,Nucleation ,Analytical chemistry ,Mineralogy ,Substrate (electronics) ,Condensed Matter Physics ,Epitaxy - Abstract
The quality of LPE grown Pb 1-x Sn x Te heteroepitaxial layers on nominally oriented substrates was found to be improved when the substrate was metal-etched prior to growth. The resulting high nucleation density permitted growth at a very low temperature. Surface terrace morphology of epitaxial layers grown on substrates which deviated from the 〈100〉 direction was found to be smoothened when this technique was used.
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- 1980
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18. Improved nucleation and a planar interface in LPE grown Pb1−xSnxTe heterostructures
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H. Shtrikman and N. Tamari
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Materials science ,Condensed matter physics ,Plane (geometry) ,Nucleation ,Heterojunction ,Substrate (electronics) ,Condensed Matter Physics ,Inorganic Chemistry ,Temperature gradient ,Crystallography ,Planar ,Materials Chemistry ,Layer (electronics) ,Dissolution - Abstract
A planar interface was obtained in LPE grown Pb 1− x Sn x Te heterostructures using nominally oriented substrates by inducing a vertical thermal gradient normal to the substrate-solution interface at the moment of contact. It was found that this vertical gradient promoted very dense nucleation in heteroepitaxial growth, resulting in the formation of a continuous layer after less than 1 sec, and a planar interface. Other growth conditions using substrates which were not accurately oriented to the (100) plane produced sparse nucleation and partial dissolution of the substrate or the previously grown layer, leading to a rough, uneven interface.
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- 1979
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19. Growth study of large non-seeded Pb1−x Snx Te single crystals
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H. Shtrikman and N. Tamari
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Materials science ,Analytical chemistry ,Nucleation ,Crystal growth ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Crystallography ,Materials Chemistry ,Grain boundary ,Growth rate ,Electrical and Electronic Engineering ,Crystal habit ,Supercooling ,Single crystal ,Seed crystal - Abstract
Large single crystals of Pb1−xSnxTe (x∼0.20) were grown by sublimation on the quartz surface of a closed ampoule. Initial undercritical supercooling provided nearly equilibrium conditions for in situ nucleation of a monocrystalline seed from which a high quality single crystal could be grown at a high growth rate. The presence of free elements in untreated charges had a strong influence on the concentration of imperfections, i.e. inclusions, holes, dislocations and low angle grain boundaries. Excess Te (δ∼ 0.01 mole %) in the annealed charge was necessary for the nucleation of a solid monocrystallite through a vapor-solid mechanism, leading, under appropriate thermal conditions, to the growt of a high quality single crystal. The apparent growth rate of the as-grown crystals appeared to be linearly dependent on the undercooling δT in the entire range (0≤δT≤25‡C) studied and it was found to be greatly influenced by deviation of the charge from stoichiometry. No apparent effect of the growth orientation on the overall growth rate was found. The crystal habit and possible driving forces of the crystal growth are qualitatively discussed.
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- 1979
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20. Electrical properties of indium-doped LPE layers of Pb1−xSnx Te
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H. Shtrikman, N. Tamari, A. Zemel, and D. Eger
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Materials science ,Solid-state physics ,Doping ,Analytical chemistry ,chemistry.chemical_element ,Indium doping ,Condensed Matter Physics ,Epitaxy ,Alloy composition ,Electronic, Optical and Magnetic Materials ,chemistry ,Electrical resistivity and conductivity ,Materials Chemistry ,Electrical and Electronic Engineering ,Saturation (magnetic) ,Indium - Abstract
Liquid-phase epitaxial (LPE) layers of Pb1−xSnxTe with an alloy composition 0≤×≤0.25 were doped n-type by adding from 0.002 to 10 at.% indium to the growth solution. Doping characteristics of indium and electrical properties of the epilayers at 77 and 4.2K were studied by Hall and resistivity measurements made directly on the grown layers. Electron concentration and mobility at 77 and 4.2K are presented as a function of indium doping for various x values. Doping coefficients of ~0.05 and ~0.03 are found for PbTe and Pb0.8Sn0.2Te, respectively, grown at ~450°C. For medium to high indium doping, the electron concentration saturates to a constant value independent of doping and LPE growth temperature. The saturation values decrease substantially with increasing x and increase with a decrease in sample temperature. Bulklike mobilities practically independent of doping are recorded up to an indium concentration Nln~0.3 at.%, above which the mobility decreases with increasing indium concentration. The data shows that indium is a suitable donor in liquid-phase epitaxial layers of Pbl-XSnxTe.
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- 1981
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21. Dislocation etch pits in LPE‐grown Pb1−xSnxTe (LTT) heterostructures
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H. Shtrikman and N. Tamari
- Subjects
Crystallography ,Materials science ,Condensed matter physics ,Annealing (metallurgy) ,viruses ,Nucleation ,General Physics and Astronomy ,Heterojunction ,Crystal growth ,Crystal structure ,Dislocation ,Epitaxy ,Lattice mismatch - Abstract
Heterostructures of Pb1−xSnxTe grown by LPE were studied by an etch technique. A consistent pattern appeared in which the lattice‐mismatched heterostructure exhibits a high etch‐pit density (?1×107 cm−2) at the interface and in the heteroepitaxial layer. The greater the lattice mismatch, the higher is the defect density. A mismatch as small as ∼2×10−4 is already sufficient to generate defects at the interface. A low‐etch‐pit‐density substrate does not moderate the defect performance in the interface and the epilayer. Homostructures show preservation of dislocation etch‐pit density throughout the whole thickness of the epilayer without a substantial decrease, contrary to other reported results. Some differences were found with respect to the opposite heterostructures Pb1−xSnxTe/Pb1−ySnyTe and Pb1−ySnyTe/Pb1−xSnxTe. A high growth temperature (?600 °C) causes a decrease in etch‐pit density and the disappearance of some defects. Enhanced nucleation, annealing of dislocations, and bulk diffusion are believed t...
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- 1979
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22. High quantum efficiency InGaAsP/InP lasers
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M. Oron, A.A. Ballman, R.E. Nahory, R.J. Martin, N. Tamari, H. Shtrikman, Larry A. Coldren, and Barry Miller
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Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Inorganic chemistry ,Heterojunction ,Semiconductor device ,Heat sink ,Epitaxy ,Laser ,Active layer ,Semiconductor laser theory ,law.invention ,law ,Optoelectronics ,Quantum efficiency ,business - Abstract
Liquid phase epitaxial grown Cd‐doped InGaAsP/InP double‐heterostructure stripe lasers were found to yield very high external differential quantum efficiency, ηext ∼74% in relatively long cavity lasers compared to that of our Zn‐doped ones. Since Cd was found to diffuse only slightly into the active layer, the high ηext as well as the lower threshold current in the Cd‐doped lasers are attributed to lower concentration of nonradiative recombination centers. The broad area lasers have lower ηext than the respective stripe lasers. Moreover, ηext is insensitive to the heat sink temperature in the range 20–70 °C in the stripe lasers while it drops considerably in the broad area ones.
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- 1982
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23. Lasing properties of InGaAsP buried heterojunction lasers grown on a mesa substrate
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C. A. Burrus, N. Tamari, H. Shtrikman, and M. Oron
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Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Heterojunction ,Semiconductor device ,Substrate (electronics) ,Laser ,Semiconductor laser theory ,law.invention ,Longitudinal mode ,law ,Optoelectronics ,Quantum efficiency ,business ,Lasing threshold - Abstract
The lasing properties of InGaAsP crescent‐shape mesa substrate buried heterojunction (CMSB) lasers emitting at 1.3 μm are described. Threshold currents as low as 20 mA have been observed with a temperature sensitivity T0 = 97 °C. An external differential quantum efficiency (two facets) of up to 54% was observed. This combination of the characteristics is directly attributed to the device structure which is specially designed to decrease lateral leakage current. Single transverse and longitudinal mode operation was realized with output powers of at least 5 mW per facet.
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- 1982
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24. Non-seeded growth of large single Pb1−xSnxTe crystals on a quartz surface
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N. Tamari and H. Shtrikman
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Materials science ,Analytical chemistry ,Nucleation ,Condensed Matter Physics ,Ampoule ,Inorganic Chemistry ,Monocrystalline silicon ,Crystallography ,Materials Chemistry ,Grain boundary ,Sublimation (phase transition) ,Growth rate ,Supercooling ,Quartz - Abstract
Single crystals of Pb1−xSnxTe (0⩽x⩽25) weighing up to 100 g and measuring up to 40 mm in diameter were grown by sublimation onto the quartz base of a closed ampoule. The process is started by undercritical supercooling which allows nucleation control for the growth of single crystals. Crystals grown by this technique were characterized by metallurgical, chemical and Laue X-ray analyses. It was found that they are monocrystalline and free of holes, voids and grain boundaries and that the dislocation density is of the order of 104 cm-2. Even at a high growth rate (5 mm/day) the quality of the crystals obtained is satisfactory.
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- 1978
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25. What Determines the Crystal Structure of Nanowires?
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M. Bukała, M. Galicka, R. Buczko, P. Kacman, H. Shtrikman, R. Popovitz-Biro, A. Kretinin, M. Heiblum, Marília Caldas, and Nelson Studart
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Crystallography ,Materials science ,Condensed matter physics ,Transmission electron microscopy ,Scanning electron microscope ,Nanowire ,Stacking ,Ab initio ,Crystal structure ,High-resolution transmission electron microscopy ,Wurtzite crystal structure - Abstract
The growth of thin GaAs and InAs nanowires (NWs) was studied both theoretically and experimentally. InAs and GaAs NWs grown by the Vapor Liquid Solid (VLS) method were studied by a high resolution transmission electron microscope (HRTEM). The wurtzite (wz) structure is dominant in such wires with occasional stacking faults (SFs) resulting from the intermixing of zinc‐blended (zb) stacking. Growth direction is 〈0001〉 and 〈111〉 for the wz and the zb type sections of the NW, respectively. Nevertheless, we find that for NWs thinner than ca 100 A, the wz/zb SFs do not appear. Using ab initio methods, we studied the stability of the structure of the NWs; in particular the competition between wz and zb phases. We have found that for the diameters of up to 50 A the most stable NWs adopt the wz 〈0001〉 structure. For NWs with the diameter larger than 100 A the free energies of wz and zb become nearly equal, which explains the occasional occurrence of SFs observed in as grown NWs.
26. Experimentally determined solid-liquid the lines of Pb1−xSnxTe
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N. Tamari and H. Shtrikman
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Inorganic Chemistry ,Crystallography ,Cooling rate ,Chemistry ,Materials Chemistry ,Analytical chemistry ,Condensed Matter Physics ,Layer (electronics) ,Solid liquid - Abstract
The solid-liquid tie-lines of Pb1−xSnxTe crystals grown by LPE technique were studied. The concentration of SnTe in the layer (xS) was found to rise monotonically versus that of the solution (xL). No measurable influence of cooling rate upon composition was found up to a rate of about 9°C/min.
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- 1978
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27. High-T0 low-threshold crescent InGaAsP mesa-substrate buried-heterojunction lasers
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H. Shtrikman and N. Tamari
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Facet (geometry) ,Materials science ,business.industry ,Heterojunction ,Substrate (electronics) ,Laser ,Epitaxy ,Mesa ,law.invention ,Gallium arsenide ,chemistry.chemical_compound ,Pulse operation ,chemistry ,law ,Optoelectronics ,Electrical and Electronic Engineering ,business ,computer ,computer.programming_language - Abstract
A crescent-shape mesa-substrate buried-heterostructure (CMSB) InGaAsP laser (? = 1.3 ?m) was grown by a single-step liquid phase epitaxy. Threshold current as low as 25 mA with 200 ?m cavity length under pulse operation and linear light/current characteristics up to five times Ith were obtained. T0 as high as 97°C was achieved for the first time for quaternary lasers. High output power, ~15 mW/facet, has been realised.
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- 1982
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28. Reactive ion etching damage to GaAs layers with etch stops
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H. Shtrikman, L. Osterling, and Christina Marie Knoedler
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chemistry.chemical_classification ,Materials science ,business.industry ,fungi ,Inorganic chemistry ,technology, industry, and agriculture ,General Engineering ,Schottky diode ,Halide ,Heterojunction ,macromolecular substances ,Semiconductor device ,stomatognathic system ,chemistry ,Etching (microfabrication) ,Optoelectronics ,Compounds of carbon ,Reactive-ion etching ,business ,Layer (electronics) - Abstract
The reactive ion etching damage occurring in GaAs/AlGaAs heterostructure devices etched in CCl2F2 and He at low‐self‐bias voltages (−85 V) was characterized by Schottky diodes. The effect of overetching was examined by etching down to a thin AlAs etch stop layer and electrically characterizing the underlying GaAs layers. Simultaneously etched bulk samples displayed less damage, indicating that bulk samples may not give a true indication of the damage in heterojunction samples. It was deduced that helium ions are most probably responsible for the damage observed.
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- 1988
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29. Topological ? Junctions from Crossed Andreev Reflection in the Quantum Hall Regime
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Finocchiaro F., Guinea F., San-Jose P. and '? Junctions from Crossed Andreev Reflection in the Quantum Hall Regime Finocchiaro F. 1,2 Guinea F. 2,3 San-Jose P. 1 1 Materials Science Factory , ICMM-CSIC, Sor Juana Ines de La Cruz 3, 28049 Madrid, Spain 2 IMDEA Nanociencia , Calle de Faraday 9, 28049 Madrid, Spain Department of Physics and Astronomy, 3 University of Manchester , Manchester M13 9PL, United Kingdom 15 March 2018 16 March 2018 120 11 116801 26 September 2017 © 2018 American Physical Society 2018 American Physical Society We consider a two-dimensional electron gas (2DEG) in the quantum Hall regime in the presence of a Zeeman field, with the Fermi level tuned to a filling factor of ? = 1 . We show that, in the presence of spin-orbit coupling, contacting the 2DEG with a narrow strip of an s -wave superconductor produces a topological superconducting gap along the contact as a result of crossed Andreev reflection (CAR) processes across the strip. The sign of the topological gap, controlled by the CAR amplitude, depends periodically on the Fermi wavelength and strip width and can be externally tuned. An interface between two halves of a long strip with topological gaps of opposite sign implements a robust ? junction, hosting a pair of Majorana zero modes that do not split despite their overlap. We show that such a configuration can be exploited to perform protected non-Abelian tunnel-braid operations without any fine tuning. Marie-Curie-ITN 607904-SPINOGRAPH Ministerio de Economía y Competitividad 10.13039/501100003329 FIS2015-65706-P Federación Española de Enfermedades Raras 10.13039/501100002924 During the last decade, we have witnessed a surge in both theoretical and experimental progress towards the realization of Majorana-based quantum computation [1–13] . Majorana zero modes (MZMs) are zero-energy bound quasiparticles of topological origin that are their own self-adjoint and obey non-Abelian anyon statistics. As a result, the adiabatic exchange (or 'braiding') of a pair of MZMs rotates the wave function of the degenerate ground state in a noncommutative fashion [14–19] . Such a process or its generalizations [20–27] can be viewed as a coherent manipulation of qubit states realized by pairs of MZMs. The interest in Majorana-based topological quantum computation stems from the fact that, as a result of the nonlocality of the MZMs, local sources of noise do not affect the fidelity of the braiding operation, nor do they induce decoherence of the ground-state manifold. This property has inspired implementations of fault-tolerant computation schemes able in principle to beat decoherence at the hardware level [1] . The fundamental ingredient needed to create MZMs is topological superconductivity—either intrinsic, like in p -wave superconductors [28,29] , or artificially designed, like in proximitized superconducting wires with strong spin-orbit coupling (SOC) in an external magnetic field [30–32] . More recently, two-dimensional electron gases (2DEGs) with induced superconductivity are being actively investigated as platforms for topological superconductivity [12,13,33–41] . In addition to the increased freedom afforded by the planar geometry, these systems allow for the formation of a new type of topological quasi–one-dimensional (1D) system, confined on both sides by two different superconductors with a phase difference ? . For transparent enough contacts, such ? junctions can greatly reduce the magnetic fields required for MZMs to emerge [38,39] . In this Letter, we show that planar junctions allow for yet another implementation of 1D topological superconductivity, with a geometry dual to the above. It is achieved by contacting a long and narrow strip of a conventional superconductor with a 2DEG in the quantum Hall (QH) regime at filling factor ? = 1 . The proximitized region acquires a superconducting gap ? , and as a result develops gapless QH edge states along each side. Due to local Andreev reflection (LAR) processes, these edge states are a mixture of electrons and holes [42,43] ',' see Fig. 1 . Assuming that spin-orbit coupling (SOC) is present in the system, and that the strip width is comparable with or smaller than the superconducting coherence length, the QH edge states may become Cooper paired through additional crossed Andreev reflection (CAR) processes [44–48] across the strip. We show that a topologically nontrivial superconducting gap ? * then opens in the edge-state dispersion, and MZMs emerge at either end of the strip. This possibility was suggested by Lee et al. in Ref. [48] , where the requisite CAR processes were experimentally demonstrated in the case of graphene, although they concentrated on the ? = 2 regime and not on the ? = 1 condition required for the formation of MZMs. 1 10.1103/PhysRevLett.120.116801.f1 FIG. 1. (a) A 2DEG with strong SOC and in the ? = 1 state of the QH phase is proximitized along a narrow strip with an s -wave superconductor. (b) Sketch of the crossed Andreev reflection (CAR) and local Andreev reflection (LAR) processes occurring across and along the proximitized region, respectively. Full (dashed) lines represent electrons (holes). CAR processes induce a topological gap in the edge-state Majorana zero modes at the ends of the strip. Here we theoretically investigate the conditions for CAR-induced topological superconductivity at ? = 1 [49] . (Related approaches have been explored in fractionalized QH systems supporting parafermions [50–52] .) We find that both the magnitude and, more importantly, the sign of the topological gap depend on the amplitude of the CAR processes. As a result, the sign of ? * can be controlled by adjusting the width of the strip and/or the electronic density of the proximitized region, which in turn determine the CAR amplitude. Reeg et al. anticipated such a possibility while studying a related system of two parallel nanowires coupled through a superconductor [53] . We show that this effect may be used to induce a sign change ? * ? - ? * along the strip by, e.g., electrostatic gating. This situation corresponds to a one-dimensional topological ? junction along the strip which is host to two degenerate MZMs that do not hybridize despite their spatial overlap [51,54,55] . Since the original induced ? does not change sign (only the edge-state gap ? * does), no external fine tuning is required to maintain the ? phase difference, and the MZMs remain protected at zero energy. As we will show, this allows for a powerful generalization of tunnel-braiding strategies (originally proposed by Flensberg [56] ) on the two MZMs in the junction, without the need to carefully control external parameters in the process. Consider a normal ( N ) 2DEG with a proximitized superconducting strip ( S ) of width W S along the x direction',' see Fig. 1(a) . The N region is in the QH regime and is subject to a Zeeman field along x , allowing the electron density to be tuned to an odd filling factor ? = 1 . (Other mechanisms, such as interaction-induced spin instabilities, may play the role of the Zeeman field in some systems [57,58] .) The S region has uniform superconducting pairing ? induced by proximity to the parent superconductor. We also assume that SOC is present in the system, either in the N region or in the S region (e.g., inherited from a superconductor made of heavy elements, such as NbN or NbTiN). The electronic structure of this system, obtained using a tight binding approximation on a square lattice (see the Supplemental Material [59] for details), is studied in the following. Since the N region is in the ? = 1 QH regime and the S strip is trivially gapped, each of the two N S interfaces hosts a single spin-polarized edge state. These states travel in opposite directions at opposite interfaces [see Fig. 1(a) ]. Local Andreev reflections at each interface transform the edge states into coherent superpositions of electrons and holes [29,42,43,63,64] , but they do not open a gap because of the chiral nature of the carriers. However, in our geometry with two parallel N S interfaces at either side of the strip, another type of Andreev reflection process can take place, wherein an electron on one interface is scattered as a hole into the other interface. This crossed Andreev reflection process has a significant amplitude only for strips narrower than the coherence length ? ? ? v F / ? . Unlike local Andreev reflection, CAR processes may open a superconducting gap ? * in the presence of SOC, since electron and hole edge states at opposite interfaces propagate in opposite directions at the same wave vector. The role of the SOC is to cant the spin away from the Zeeman field in opposite directions in the two edge states, so that they can pair to form a spin singlet. At ? = 1 , the gap resulting from CAR is topological, as can be seen by a direct mapping of the two spin-canted edge states plus pairing into an Oreg-Lutchyn model [30,31] (see Eq. (B4) in the Supplemental Material]. Figure 2(a) shows the gapped band structure of an infinite strip with significant CAR processes (left, W S ? ? ) and the gapless case without CAR (right, W S ? ? ). The topological nature of ? * manifests in the appearance of MZMs when the strip is terminated inside the 2DEG [Fig. 2(d) ]. 2 10.1103/PhysRevLett.120.116801.f2 FIG. 2. (a) Spectrum of the system with periodic boundary conditions (PBCs) along both directions for widths of the central strip such that CAR is present (left, W S = 300 ? ? nm ) and absent (right, W S = 2 ? ? ? m ). (b) Behavior of the topological gap ? * as a function of W S / ? F , for ? / ? = 1.95 . The grey region corresponds to the opening of a trivial gap due to the direct overlap of the QH edge states. (c) Lowest eigenvalues in a system with PBC and two gaps ? 1 , 2 * along the strip, either of equal (blue) or of opposite sign (red). Two pairs of MZMs appear in the latter case (one pair at each of the two junctions, required in the case of PBC). (d) LDOS associated with the zero-energy eigenvalues, calculated for a system with open boundaries. The strip is such that it terminates on one end within the 2DEG and on the other at the sample edge. One Majorana mode ( ? ˜ 1 ) is therefore localized at one end, and the other ( ? ˜ 2 ) delocalizes in the QH edge states. The gap ? * changes sign along the strip length so that two additional nonhybridizing localized MZMs ? 1 and ? 2 appear at the boundary. See the Supplemental Material [59] for the parameters used. The value of the topological gap ? * is entirely determined by the CAR amplitude, which in turn depends on the strip width W S , the Fermi wavelength ? F , and the singlet amplitude governed by the proximity gap ? and the SOC strength ? . We have performed tight binding simulations which show, specifically, that ? * is a real periodic function of the W S / ? F with alternating sign',' see Fig. 2(b) . This behavior is confirmed by an analytical calculation in terms of Green’s functions, which yields ? * ? 4 ? 2 t ? 2 a 3 W S ? ˜ F 2 ? ˜ × Im ( z csc z ) sin ? , (1) where ? is the spin canting angle due to spin-orbit coupling, ? ˜ F = 2 ? / 2 m ? ˜ , ? ˜ = ? - k F 2 / 2 m , ? is the strip Fermi energy, k F is the edge-state Fermi wave vector, and z = 2 ? 1 + i ? / ? ˜ × W S / ? ˜ F (see the Supplemental Material [59] for details). This formalizes the central finding of our work. The sign of ? * follows the change in the number of normal modes in the strip, given by ? 2 W S / ? ˜ F ? . It is therefore likely to be realistically tuneable with electrostatic gating of the strip region that may modify both its effective width W S and its electronic density, or by adjusting the width lithographically [53] . The possibility of changing the sign of the topological gap along the strip opens a new opportunity for the generation of MZMs. A long strip with a uniform induced gap ? but edge-state gaps of opposite sign in its two halves ( ? 1 * ? 2 * < 0 ) forms a topological ? junction, similar to a topological Josephson junction tuned to phase difference ? = ? . Such a system then develops two MZMs localized at the junction [see Figs. 2(c) and 2(d) ] that stay at zero energy despite their spatial overlap as long as the phase difference across the junction remains ? . The ? phase difference between the two halves of the strip is robust. Since ? * on both sides is finite and real, its sign does not depend on perturbations. The CAR ? junction is furthermore stabilized by the phase rigidity of the strip order parameter ? [59] . Unlike in ? = ? Josephson junctions, it does not require fine tuning of any external parameter such as the flux across the superconducting circuit or the strip parameters. As a result, CAR-induced topological superconductivity enables the creation of MZMs that remain decoupled regardless of their overlap. This offers great advantages in the context of coherent Majorana qubit manipulation and braiding, as outlined in the following section. We now present a possible application of the CAR ? junction to the challenge of non-Abelian Majorana braiding. Plenty of proposals for the demonstration of the non-Abelian statistics of Majorana excitations have been presented, which hinge on the physical exchange (or braiding) in real space of pairs of Majorana modes [14,15,17,18,32] . Some other approaches, however, rest upon schemes that involve rotation of the wave function without the need for actual MZMs to move spatially [16,19–24,56] . Among these, it has been suggested [56] that adiabatic tunnel processes of single electrons from a quantum dot into pairs of Majorana zero modes can result in arbitrary non-Abelian rotations of the ground-state manifold. These so-called tunnel-braid operations are extremely versatile, as they allow a universal set of single-qubit gates, in contrast to braiding that only allows a limited set of operations. Unfortunately, tunnel braiding has the drawback of requiring a precise, typically fine-tuned, phase difference of ? between the MZMs involved throughout the operation. If the phase deviates from this value, the result of the operation becomes time dependent and is no longer protected against decoherence. The robustness and lack of fine tuning of CAR ? junctions promises to overcome this problem. In Fig. 3(a) , we present a possible geometry to implement a CAR-protected tunnel-braiding scheme. We deposit two narrow superconducting strips on a ? = 1 2DEG such that two independent CAR-induced topological gaps ? 1 * and ? 2 * open on each. One end of each strip terminates inside the 2DEG, so that the corresponding MZMs ? 1 , 2 lie within a finite distance of each other. The MZMs ? ˜ 1 , 2 on the far end of the strips are assumed to be sufficiently far from the junction so as to become decoupled from ? 1 , 2 . We control the Fermi level of the two strips, ? 1 and ? 2 , by means of two independent gates, in order to tune the magnitude and sign of the topological gaps ? 1 , 2 * . 3 10.1103/PhysRevLett.120.116801.f3 FIG. 3. (a) Sketch of a tunnel-braiding setup, with the two inner MZMs ? 1 and ? 2 from strips 1 and 2 coupled to a dot (QD) in the Coulomb blockade regime through tunnel barriers. The dot occupancy is controlled by a gate (G), which shifts the dot level ? D . (b) Comparison of the low-energy spectra of the composite system for gaps ? 1 , 2 * in the two strips of equal (blue) and opposite (red) sign. The dotted and solid lines correspond predominantly to dot and Majorana states, respectively. (c) Energy of the MZMs as they hybridize through the dot as a function of the changing chemical potential between the left and right strips ? ? = ? 1 - ? 2 , for ? 2 and ? D fixed. The blue (dark) regions indicate phases where ? 1 , 2 * have opposite sign, and ? 1 , 2 do not hybridize through the dot. See the Supplemental Material [59] for the parameters used. The two 'inner' MZMs ? 1 and ? 2 are then coupled to a quantum dot through two tunnel barriers that may be tuned externally. The tunneling couplings t 1 , 2 control the specific non-Abelian operation to perform. The dot is in the Coulomb blockade regime, with occupation N . We adiabatically tune the dot level ? D across an N ? N - 1 transition between two adjacent Coulomb valleys. This transfers a single electron to the composite state of the two Majorana modes. Figure 3(b) shows the evolution of the low-energy single-particle Bogoliubov spectrum of the full dot-2DEG-strip system across this process, with dashed lines corresponding to mostly dot states, and solid lines to MZMs states in the strip. The two cases with equal (blue, ? = 0 ) and opposite (red, ? = ? ) signs for ? 1 , 2 * show markedly different structures. The conventional ? = 0 case splits the MZMs away from zero close to the N ? N - 1 transition, as they become resonantly coupled via the dot state [65] . Such an operation is not protected against noise, and its result depends on timing. In contrast, the ? = ? case shows MZMs that remain exactly at zero energy throughout the operation, as their hybridization across the dot is forbidden by the opposite sign of ? 1 , 2 * . The state after emptying the dot is then independent of timing and insensitive to noise in ? D . As shown by Flensberg [56] , the transformation P within the degenerate ground-state manifold associated with this process is a rotation by an angle ? around an axis in the x y plane, controlled by the tunnel couplings t 1 , 2 . If the couplings are then changed to t 1 , 2 ? , and the reverse adiabatic transition N - 1 ? N on the dot is performed, the composite operation P ? P rotates the quantum state of the Majorana modes by an arbitrary angle around the z axis. In comparison, braiding two MZMs can only rotate the wave function about the z axis by an angle of ? / 2 . As no fine tuning is required to maintain the ? = ? condition in the CAR ? junction, the tunnel-braiding process should enjoy similar topological protection as a standard spatial braiding. In Fig. 3(c) , we show the MZM splitting across a resonant dot as we vary the Fermi energy under one of the strips while the other is kept fixed. As expected, we find alternating ? = 0 (red) and ? = ? (blue) regions, in which the MZM splitting is finite and zero, respectively. The width in parameter space of the ? = ? regions with MZMs pinned to zero is finite, unlike in topological Josephson junctions. In essence, we have presented here a scheme towards one-dimensional topological superconductivity that extends previous approaches that are based on the proximity effect—i.e., local Andreev reflections—of spinless helical electronic phases coupled to superconductors. While such approaches indeed produce a topological order parameter, its phase is fixed by the parent superconductor. In contrast, crossed Andreev reflections, relevant in geometries as those discussed here, also produces a topological order parameter, but its sign may be either the same as or opposite to that of the parent, depending on the CAR amplitude itself. Controlling the sign of the topological gap in a stable way has many ramifications. We have shown how it may be exploited to produce stable, self-tuned ? junctions, wherein sizeable Majorana overlaps, which are problematic in more conventional Majorana devices, are no longer a concern, at least for pairs of MZMs at the junction. As a result, parametric braiding of Majoranas through, e.g, tunnel-braiding schemes, becomes significantly more realistic. The specific implementation of the CAR-induced topological gap described here is just one conceptually simple possibility, but it is not unique. Other phases, such as quantum anomalous Hall states, could also exhibit the requisite ? = 1 spin-singlet states. The temperature requirements for using our protocol are limited by both the Zeeman splitting and ? * , which gives a conservative estimate between 0.1 K and 1 K, well within reach of current experiments on this type of system. 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- Published
- 2018
30. Direct Measurement of Band Edge Discontinuity in Individual Core–Shell Nanowires by Photocurrent Spectroscopy
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Ilio Miccoli, Tsachi Livneh, Hadas Shtrikman, Nico Lovergine, Yujie J. Ding, Guannan Chen, Jonathan E. Spanier, Guan Sun, Paola Prete, Patrick Kung, G., Chen, G., Sun, Y. J., Ding, Prete, Paola, Miccoli, Ilio, Lovergine, Nicola, H., Shtrikman, P., Kung, T., Livneh, and J. E., Spanier
- Subjects
Optics and Photonics ,Photoluminescence ,Materials science ,Band edge discontinuity ,Nanowire ,heterojunction interfaces ,Physics::Optics ,Gallium ,Bioengineering ,Arsenicals ,Band offset ,Condensed Matter::Materials Science ,Planar ,Band diagram ,General Materials Science ,photocurrent spectroscopy ,Photocurrent ,Nanowires ,business.industry ,Spectrum Analysis ,Mechanical Engineering ,Heterojunction ,General Chemistry ,core-shell nanowire ,III-V Semiconductor ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Semiconductors ,Optoelectronics ,Coaxial ,business ,core-shell nanowires ,Aluminum - Abstract
Group III-V coaxial core-shell semiconducting nanowire heterostructures possess unique advantages over their planar counterparts in logic, photovoltaic, and light-emitting devices. Dimensional confinement of electronic carriers and interface complexity in nanowires are known to produce local electronic potential landscapes along the radial direction that deviate from those along the normal to planar heterojunction interfaces. However, understanding of selected electronic and optoelectronic carrier transport properties and device characteristics remains lacking without a direct measurement of band alignment in individual nanowires. Here, we report on, in the GaAs/AlxGa 1-xAs and GaAs/AlAs core-shell nanowire systems, how photocurrent and photoluminescence spectroscopies can be used together to construct a band diagram of an individual heterostructure nanowire with high spectral resolution, enabling quantification of conduction band offsets.
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- 2013
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31. Topotaxial mutual-exchange growth of magnetic Zintl Eu 3 In 2 As 4 nanowires with axion insulator classification.
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Song MS, Houben L, Zhao Y, Bae H, Rothem N, Gupta A, Yan B, Kalisky B, Zaluska-Kotur M, Kacman P, Shtrikman H, and Beidenkopf H
- Abstract
Due to quasi-one-dimensional confinement, nanowires possess unique electronic properties, which can promote specific device architectures. However, nanowire growth presents paramount challenges, limiting the accessible crystal structures and elemental compositions. Here we demonstrate solid-state topotactic exchange that converts wurtzite InAs nanowires into Zintl Eu
3 In2 As4 . Molecular-beam-epitaxy-based in situ evaporation of Eu and As onto InAs nanowires results in the mutual exchange of Eu from the shell and In from the core. Therefore, a single-phase Eu3 In2 As4 shell grows, which gradually consumes the InAs core. The mutual exchange is supported by the substructure of the As matrix, which is similar across the wurtzite InAs and Zintl Eu3 In2 As4 and therefore is topotactic. The Eu3 In2 As4 nanowires undergo an antiferromagnetic transition at a Néel temperature of ~6.5 K. Ab initio calculations confirm the antiferromagnetic ground state and classify Eu3 In2 As4 as a C2 T axion insulator, hosting both chiral hinge modes and unpinned Dirac surface states. The topotactic mutual-exchange nanowire growth will, thus, enable the exploration of intricate magneto-topological states in Eu3 In2 As4 and potentially in other exotic compounds., Competing Interests: Competing interests: M.S.S., L.H., H.S. and H.B. are inventors on US provisional patent no. 63/472,598 filed on 13 June 2023 under Yeda Research and Development Co. Ltd. The other authors declare no competing interests., (© 2024. The Author(s), under exclusive licence to Springer Nature Limited.)- Published
- 2024
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32. Intrinsic Magnetic (EuIn)As Nanowire Shells with a Unique Crystal Structure.
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Shtrikman H, Song MS, Załuska-Kotur MA, Buczko R, Wang X, Kalisky B, Kacman P, Houben L, and Beidenkopf H
- Abstract
In the pursuit of magneto-electronic systems nonstoichiometric magnetic elements commonly introduce disorder and enhance magnetic scattering. We demonstrate the growth of (EuIn)As shells, with a unique crystal structure comprised of a dense net of Eu inversion planes, over InAs and InAs
1- x Sbx core nanowires. This is imaged with atomic and elemental resolution which reveal a prismatic configuration of the Eu planes. The results are supported by molecular dynamics simulations. Local magnetic and susceptibility mappings show magnetic response in all nanowires, while a subset bearing a DC signal points to ferromagnetic order. These provide a mechanism for enhancing Zeeman responses, operational at zero applied magnetic field. Such properties suggest that the obtained structures can serve as a preferred platform for time-reversal symmetry broken one-dimensional states including intrinsic topological superconductivity.- Published
- 2022
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33. Sub-Band Spectrum Engineering via Structural Order in Tapered Nanowires.
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Song MS, Koren T, Załuska-Kotur M, Buczko R, Avraham N, Kacman P, Shtrikman H, and Beidenkopf H
- Abstract
The cross-sectional dimensions of nanowires set the quantization conditions for the electronic subbands they host. These can be used as a platform to realize one-dimesional topological superconductivity. Here we develop a protocol that forces such nanowires to kink and change their growth direction. Consequently, a thin rectangular nanoplate is formed, which gradually converges into a very thin square tip. We characterize the resulting tapered nanowires structurally and spectroscopically by scanning and transmission electron microscopy and scanning tunneling microscopy and spectroscopy and model their growth. A unique structure composed of ordered rows of atoms on the (110) facet of the nanoflag is further revealed by atomically resolved topography and modeled by simulations. We discuss possible advantages tapered InAs nanowires offer for Majorana zero-mode realization and manipulation.
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- 2021
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34. Anomalous thermopower oscillations in graphene-nanowire vertical heterostructures.
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Mitra R, Ranjan Sahu M, Sood A, Taniguchi T, Watanabe K, Shtrikman H, Mukerjee S, Sood AK, and Das A
- Abstract
Thermoelectric measurements have the potential to uncover the density of states (DOSs) of low-dimensional materials. Here, we present the anomalous thermoelectric behavior of monolayer graphene-nanowire (NW) heterostructures, showing large oscillations as a function of the doping concentration. Our devices consist of InAs NW and graphene vertical heterostructures, which are electrically isolated by thin (∼10 nm) hexagonal boron nitride (hBN) layers. In contrast to conventional thermoelectric measurements, where a heater is placed on one side of a sample, we use the InAs NW (diameter ∼50 nm) as a local heater placed in the middle of the graphene channel. We measure the thermoelectric voltage induced in graphene due to Joule heating in the NW as a function of temperature (1.5-50 K) and carrier concentration. The thermoelectric voltage in bilayer graphene (BLG)-NW heterostructures shows sign change around the Dirac point, as predicted by Mott's formula. In contrast, the thermoelectric voltage measured across monolayer graphene (MLG)-NW heterostructures shows anomalous large-amplitude oscillations around the Dirac point, not seen in the Mott response derived from the electrical conductivity measured on the same device. The anomalous oscillations are a signature of the modified DOSs in MLG by the electrostatic potential of the NW, which is much weaker in the NW-BLG devices. Thermal calculations of the heterostructure stack show that the temperature gradient is dominant in the graphene region underneath the NW, and thus sensitive to the modified DOSs resulting in anomalous oscillations in the thermoelectric voltage. Furthermore, with the application of a magnetic field, we detect modifications in the DOSs due to the formation of Landau levels in both MLG and BLG., (© 2021 IOP Publishing Ltd.)
- Published
- 2021
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35. Anomalous Coulomb Drag between InAs Nanowire and Graphene Heterostructures.
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Mitra R, Sahu MR, Watanabe K, Taniguchi T, Shtrikman H, Sood AK, and Das A
- Abstract
Correlated charge inhomogeneity breaks the electron-hole symmetry in two-dimensional (2D) bilayer heterostructures which is responsible for nonzero drag appearing at the charge neutrality point. Here we report Coulomb drag in novel drag systems consisting of a two-dimensional graphene and a one-dimensional (1D) InAs nanowire (NW) heterostructure exhibiting distinct results from 2D-2D heterostructures. For monolayer graphene (MLG)-NW heterostructures, we observe an unconventional drag resistance peak near the Dirac point due to the correlated interlayer charge puddles. The drag signal decreases monotonically with temperature (∼T^{-2}) and with the carrier density of NW (∼n_{N}^{-4}), but increases rapidly with magnetic field (∼B^{2}). These anomalous responses, together with the mismatched thermal conductivities of graphene and NWs, establish the energy drag as the responsible mechanism of Coulomb drag in MLG-NW devices. In contrast, for bilayer graphene (BLG)-NW devices the drag resistance reverses sign across the Dirac point and the magnitude of the drag signal decreases with the carrier density of the NW (∼n_{N}^{-1.5}), consistent with the momentum drag but remains almost constant with magnetic field and temperature. This deviation from the expected T^{2} arises due to the shift of the drag maximum on graphene carrier density. We also show that the Onsager reciprocity relation is observed for the BLG-NW devices but not for the MLG-NW devices. These Coulomb drag measurements in dimensionally mismatched (2D-1D) systems, hitherto not reported, will pave the future realization of correlated condensate states in novel systems.
- Published
- 2020
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36. Concomitant opening of a bulk-gap with an emerging possible Majorana zero mode.
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Grivnin A, Bor E, Heiblum M, Oreg Y, and Shtrikman H
- Abstract
Majorana quasiparticles are generally detected in a 1D topological superconductor by tunneling electrons into its edge, with an emergent zero-bias conductance peak (ZBCP). However, such a ZBCP can also result from other mechanisms, hence, additional verifications are required. Since the emergence of a Majorana must be accompanied by an opening of a topological gap in the bulk, two simultaneous measurements are performed: one in the bulk and another at the edge of a 1D InAs nanowire coated with epitaxial aluminum. Only under certain experimental parameters, a closing of the superconducting bulk-gap that is followed by its reopening, appears simultaneously with a ZBCP at the edge. Such events suggest the occurrence of a topologically non-trivial phase. Yet, we also find that ZBCPs are observed under different tuning parameters without simultaneous reopening of a bulk-gap. This demonstrates the importance of simultaneous probing of bulk and edge in the identification of Majorana edge-states.
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- 2019
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37. Au-Assisted Substrate-Faceting for Inclined Nanowire Growth.
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Kang JH, Krizek F, Zaluska-Kotur M, Krogstrup P, Kacman P, Beidenkopf H, and Shtrikman H
- Abstract
We study the role of gold droplets in the initial stage of nanowire growth via the vapor-liquid-solid method. Apart from serving as a collections center for growth species, the gold droplets carry an additional crucial role that necessarily precedes the nanowire emergence, that is, they assist the nucleation of nanocraters with strongly faceted {111}B side walls. Only once these facets become sufficiently large and regular, the gold droplets start nucleating and guiding the growth of nanowires. We show that this dual role of the gold droplets can be detected and monitored by high-energy electron diffraction during growth. Moreover, gold-induced formation of craters and the onset of nanowires growth on the {111}B facets inside the craters are confirmed by the results of Monte Carlo simulations. The detailed insight into the growth mechanism of inclined nanowires will help to engineer new and complex nanowire-based device architectures.
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- 2018
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38. Nonlocal supercurrent of quartets in a three-terminal Josephson junction.
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Cohen Y, Ronen Y, Kang JH, Heiblum M, Feinberg D, Mélin R, and Shtrikman H
- Abstract
A novel nonlocal supercurrent, carried by quartets, each consisting of four electrons, is expected to appear in a voltage-biased three-terminal Josephson junction. This supercurrent results from a nonlocal Andreev bound state (ABS), formed among three superconducting terminals. While in a two-terminal Josephson junction the usual ABS, and thus the dc Josephson current, exists only in equilibrium, the ABS, which gives rise to the quartet supercurrent, persists in the nonlinear regime. In this work, we report such resonance in a highly coherent three-terminal Josephson junction made in an InAs nanowire in proximity to an aluminum superconductor. In addition to nonlocal conductance measurements, cross-correlation measurements of current fluctuations provided a distinctive signature of the quartet supercurrent. Multiple device geometries had been tested, allowing us to rule out competing mechanisms and to establish the underlying microscopic origin of this coherent nondissipative current., Competing Interests: The authors declare no conflict of interest.
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- 2018
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39. Robust Epitaxial Al Coating of Reclined InAs Nanowires.
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Kang JH, Grivnin A, Bor E, Reiner J, Avraham N, Ronen Y, Cohen Y, Kacman P, Shtrikman H, and Beidenkopf H
- Abstract
It was recently shown that in situ epitaxial aluminum coating of indium arsenide nanowires is possible and yields superior properties relative to ex-situ evaporation of aluminum ( Nat. Mater. 2015 , 14 , 400 - 406 ). We demonstrate a robust and adaptive epitaxial growth protocol satisfying the need for producing an intimate contact between the aluminum superconductor and the indium arsenide nanowire. We show that the (001) indium arsenide substrate allows successful aluminum side-coating of reclined indium arsenide nanowires that emerge from (111)B microfacets. A robust, induced hard superconducting gap in the obtained indium arsenide/aluminum core/partial shell nanowires is clearly demonstrated. We compare epitaxial side-coating of round and hexagonal cross-section nanowires and find the surface roughness of the round nanowires to induce a more uniform aluminum profile. Consequently, the extended aluminum grains result in increased strain at the interface with the indium arsenide nanowire, which is found to induce dislocations penetrating into round nanowires only. A unique feature of proposed growth protocol is that it supports in situ epitaxial deposition of aluminum on all three arms of indium arsenide nanowire intersections in a single growth step. Such aluminum coated intersections play a key role in engineering topologically superconducting networks required for Majorana based quantum computation schemes.
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- 2017
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40. Wurtzite/Zinc-Blende 'K'-shape InAs Nanowires with Embedded Two-Dimensional Wurtzite Plates.
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Kang JH, Galicka M, Kacman P, and Shtrikman H
- Abstract
The prediction that Majorana Fermions obey nonabelian exchange statistics can only be tested by interchanging such carriers in "Y'- or 'X'- (or 'K'-) shaped nanowire networks. Here we report the molecular beam epitaxy (MBE) growth of 'K'-shaped InAs nanowires consisting of two interconnected wurtzite wires with an additional zinc-blende wire in between. Moreover, occasionally, the growth results in formation of a purely wurtzite two-dimensional plate between the zinc-blende nanowire and one (sometimes both) intersecting wurtzite arm. By modeling the crystal structure we explain the transformation from wurtzite to zinc-blende and the coexistence of both crystallographic phases in such nanowire structures. To the best of our knowledge neither the MBE growth of an InAs nano-object showing combination of wurtzite and zinc-blende crystal structures nor the growth of pure wurtzite InAs nanoplates in this geometry has been reported before.
- Published
- 2017
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41. Cotunneling Drag Effect in Coulomb-Coupled Quantum Dots.
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Keller AJ, Lim JS, Sánchez D, López R, Amasha S, Katine JA, Shtrikman H, and Goldhaber-Gordon D
- Abstract
In Coulomb drag, a current flowing in one conductor can induce a voltage across an adjacent conductor via the Coulomb interaction. The mechanisms yielding drag effects are not always understood, even though drag effects are sufficiently general to be seen in many low-dimensional systems. In this Letter, we observe Coulomb drag in a Coulomb-coupled double quantum dot and, through both experimental and theoretical arguments, identify cotunneling as essential to obtaining a correct qualitative understanding of the drag behavior.
- Published
- 2016
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42. Charge of a quasiparticle in a superconductor.
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Ronen Y, Cohen Y, Kang JH, Haim A, Rieder MT, Heiblum M, Mahalu D, and Shtrikman H
- Abstract
Nonlinear charge transport in superconductor-insulator-superconductor (SIS) Josephson junctions has a unique signature in the shuttled charge quantum between the two superconductors. In the zero-bias limit Cooper pairs, each with twice the electron charge, carry the Josephson current. An applied bias VSD leads to multiple Andreev reflections (MAR), which in the limit of weak tunneling probability should lead to integer multiples of the electron charge ne traversing the junction, with n integer larger than 2Δ/eVSD and Δ the superconducting order parameter. Exceptionally, just above the gap eVSD ≥ 2Δ, with Andreev reflections suppressed, one would expect the current to be carried by partitioned quasiparticles, each with energy-dependent charge, being a superposition of an electron and a hole. Using shot-noise measurements in an SIS junction induced in an InAs nanowire (with noise proportional to the partitioned charge), we first observed quantization of the partitioned charge q = e*/e = n, with n = 1-4, thus reaffirming the validity of our charge interpretation. Concentrating next on the bias region eVSD ~ 2Δ, we found a reproducible and clear dip in the extracted charge to q ~ 0.6, which, after excluding other possibilities, we attribute to the partitioned quasiparticle charge. Such dip is supported by numerical simulations of our SIS structure.
- Published
- 2016
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43. Room temperature observation of quantum confinement in single InAs nanowires.
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Halpern E, Henning A, Shtrikman H, Rurali R, Cartoixà X, and Rosenwaks Y
- Abstract
Quantized conductance in nanowires can be observed at low temperature in transport measurements; however, the observation of sub-bands at room temperature is challenging due to temperature broadening. So far, conduction band splitting at room temperature has not been observed in III-V nanowires mainly due to the small energetic separations between the sub-bands. We report on the measurement of conduction sub-bands at room temperature, in single InAs nanowires, using Kelvin probe force microscopy. This method does not rely on charge transport but rather on measurement of the nanowire Fermi level position as carriers are injected into a single nanowire transistor. As there is no charge transport, electron scattering is no longer an issue, allowing the observation of the sub-bands at room temperature. We measure the energy of the sub-bands in nanowires with two different diameters, and obtain excellent agreement with theoretical calculations based on an empirical tight-binding model.
- Published
- 2015
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44. Unintentional high-density p-type modulation doping of a GaAs/AlAs core-multishell nanowire.
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Jadczak J, Plochocka P, Mitioglu A, Breslavetz I, Royo M, Bertoni A, Goldoni G, Smolenski T, Kossacki P, Kretinin A, Shtrikman H, and Maude DK
- Abstract
Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum well in the AlAs shell effectively getters residual carbon acceptors leading to an unintentional p-type doping. Magneto-optical studies of such a GaAs/AlAs core-multishell NW reveal quantum confined emission. Theoretical calculations of NW electronic structure confirm quantum confinement of carriers at the core/shell interface due to the presence of ionized carbon acceptors in the 1 nm GaAs layer in the shell. Microphotoluminescence in high magnetic field shows a clear signature of avoided crossings of the n = 0 Landau level emission line with the n = 2 Landau level TO phonon replica. The coupling is caused by the resonant hole-phonon interaction, which points to a large two-dimensional hole density in the structure.
- Published
- 2014
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45. Crystal structure and transport in merged InAs nanowires MBE grown on (001) InAs.
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Kang JH, Cohen Y, Ronen Y, Heiblum M, Buczko R, Kacman P, Popovitz-Biro R, and Shtrikman H
- Abstract
Molecular beam epitaxy growth of merging InAs nanowire intersections, that is, a first step toward the realization of a network of such nanowires, is reported. While InAs nanowires play already a leading role in the search for Majorana fermions, a network of these nanowires is expected to promote their exchange and allow for further development of this field. The structural properties of merged InAs nanowire intersections have been investigated using scanning and transmission electron microscope imaging. At the heart of the intersection, a sharp change of the crystal structure from wurtzite to perfect zinc blende is observed. The performed low-temperature conductance measurements demonstrate that the intersection does not impose an obstacle to current transport.
- Published
- 2013
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46. High magnetic field reveals the nature of excitons in a single GaAs/AlAs core/shell nanowire.
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Plochocka P, Mitioglu AA, Maude DK, Rikken GL, del Águila AG, Christianen PC, Kacman P, and Shtrikman H
- Abstract
Magneto-photoluminescence measurements of individual zinc-blende GaAs/AlAs core/shell nanowires are reported. At low temperature, a strong emission line at 1.507 eV is observed under low power (nW) excitation. Measurements performed in high magnetic field allowed us to detect in this emission several lines associated with excitons bound to defect pairs. Such lines were observed before in epitaxial GaAs of very high quality, as reported by Kunzel and Ploog. This demonstrates that the optical quality of our GaAs/AlAs core/shell nanowires is comparable to the best GaAs layers grown by molecular beam epitaxy. Moreover, strong free exciton emission is observed even at room temperature. The bright optical emission of our nanowires in room temperature should open the way for numerous optoelectronic device applications.
- Published
- 2013
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47. Influence of metal deposition on exciton-surface plasmon polariton coupling in GaAs/AlAs/GaAs core-shell nanowires studied with time-resolved cathodoluminescence.
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Estrin Y, Rich DH, Kretinin AV, and Shtrikman H
- Subjects
- Electrodes, Luminescence, Surface Plasmon Resonance, Aluminum chemistry, Arsenicals chemistry, Gallium chemistry, Nanowires chemistry
- Abstract
The coupling of excitons to surface plasmon polaritons (SPPs) in Au- and Al-coated GaAs/AlAs/GaAs core-shell nanowires, possessing diameters of ~100 nm, was probed using time-resolved cathodoluminescence (CL). Excitons were generated in the metal coated nanowires by injecting a pulsed high-energy electron beam through the thin metal films. The Purcell enhancement factor (FP) was obtained by direct measurement of changes in the temperature-dependent radiative lifetime caused by the nanowire exciton-SPP coupling and compared with a model that takes into account the dependence of FP on the distance from the metal film and the thickness of the film covering the GaAs nanowires.
- Published
- 2013
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48. Pseudospin-resolved transport spectroscopy of the Kondo effect in a double quantum dot.
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Amasha S, Keller AJ, Rau IG, Carmi A, Katine JA, Shtrikman H, Oreg Y, and Goldhaber-Gordon D
- Abstract
We report measurements of the Kondo effect in a double quantum dot, where the orbital states act as pseudospin states whose degeneracy contributes to Kondo screening. Standard transport spectroscopy as a function of the bias voltage on both dots shows a zero-bias peak in conductance, analogous to that observed for spin Kondo in single dots. Breaking the orbital degeneracy splits the Kondo resonance in the tunneling density of states above and below the Fermi energy of the leads, with the resonances having different pseudospin character. Using pseudospin-resolved spectroscopy, we demonstrate the pseudospin character by observing a Kondo peak at only one sign of the bias voltage. We show that even when the pseudospin states have very different tunnel rates to the leads, a Kondo temperature can be consistently defined for the double quantum dot system.
- Published
- 2013
- Full Text
- View/download PDF
49. Direct imaging of single Au atoms within GaAs nanowires.
- Author
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Bar-Sadan M, Barthel J, Shtrikman H, and Houben L
- Abstract
Incorporation of catalyst atoms during the growth process of semiconductor nanowires reduces the electron mean free path and degrades their electronic properties. Aberration-corrected scanning transmission electron microscopy (STEM) is now capable of directly imaging single Au atoms within the dense matrix of a GaAs crystal, by slightly tilting the GaAs lattice planes with respect to the incident electron beam. Au doping values in the order of 10(17-18) cm(3) were measured, making ballistic transport through the nanowires practically inaccessible.
- Published
- 2012
- Full Text
- View/download PDF
50. High-efficiency Cooper pair splitting demonstrated by two-particle conductance resonance and positive noise cross-correlation.
- Author
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Das A, Ronen Y, Heiblum M, Mahalu D, Kretinin AV, and Shtrikman H
- Abstract
Entanglement is at the heart of the Einstein-Podolsky-Rosen paradox, where the non-locality is a necessary ingredient. Cooper pairs in superconductors can be split adiabatically, thus forming entangled electrons. Here, we fabricate such an electron splitter by contacting an aluminium superconductor strip at the centre of a suspended InAs nanowire. The nanowire is terminated at both ends with two normal metallic drains. Dividing each half of the nanowire by a gate-induced Coulomb blockaded quantum dot strongly impeds the flow of Cooper pairs due to the large charging energy, while still permitting passage of single electrons. We provide conclusive evidence of extremely high efficiency Cooper pair splitting via observing positive two-particle correlations of the conductance and the shot noise of the split electrons in the two opposite drains of the nanowire. Moreover, the actual charge of the injected quasiparticles is verified by shot noise measurements.
- Published
- 2012
- Full Text
- View/download PDF
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