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3. Photoluminescence study of implantation-induced intermixing of In0.53Ga0. 47As/InP single quantum wells by argon ions

Author

Oshinowo, J., Dreybrodt, J., Forchel, A., Mestres, N., Calleja, J.M., Gyuro, I., Speier, P., and Zielinski, E.

Subjects
Photoluminescence -- Measurement, Quantum wells -- Research, Argon -- Influence, Physics
Abstract

The intermixing effects in In0.53Ga0.47As/InP single quantum wells induced by 30-Kv Ar+-ionm beam implantation with ranging doses and rapid thermal annealing (RTA) at varying temperatures are studied. Photoluminescence emission energy increases with changes in RTA and temperature in comparison with unimplanted heterostructures. This indicates that implantation determines intermixing while unimplanted heterostructures indicate a predominant contribution of thermal interdiffusion. Raman measurements confirm the decrease of 4a concentration after interdiffusion.

Published
1993

5. Photoluminescence study of implantation-induced intermixing of In0.53Ga0.47As/InP single quantum wells by argon ions.

Author

Oshinowo, J., Dreybrodt, J., Forchel, A., Mestres, N., Calleja, J. M., Gyuro, I., Speier, P., and Zielinski, E.

Subjects
INDIUM compounds, INDIUM phosphide, QUANTUM wells, ION implantation, RAMAN effect
Abstract

Investigates intermixing effects in indium-gallium-arsenic/indium phosphide single quantum wells induced by positive argon-ion beam implantation. Cause of the increase of the photoluminescence emission energy; Reason for the decrease of gallium concentration after interdiffusion; Use of Raman measurements.

Published
1993
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44. Investigation of InGaAs/InP Interdiffusion by Simultaneous Transmission Electron-Microscopy and Photoluminescence Analysis

Author

Oshinowo, J., Forchel, A., Ganiere, J. D., Ruterana, P., Stadelmann, P. A., Gyuro, I., Laube, G., and Zielinski, E.

Subjects
IMAGE, SIMULATION, QUANTUM-WELL STRUCTURES
Abstract

We investigated the interdiffusion of InGaAs/InP quantum wells (QWs) due to rapid thermal annealing (RTA) by photoluminescence (PL) spectroscopy and wedge transmission electron microscopy (WTEM). After RTA at temperatures between 650 and 900 degrees C (annealing time 1 min) we observed large emission energy shifts of up to 210 meV. From the temperature dependence of the PL emission energy shifts, the interdiffusion lengths, interdiffusion coefficients and activation energies (e.g. of 2 eV) were determined using a simple model of ion intermixing. In addition the samples were characterized by WTEM to obtain a microscopic understanding of the interdiffusion process across the InGaAs-InP heterostructure interface. We obtained a transition region length of about 2.5 nm for an 11 nm QW, in qualitative agreement with the interdiffusion length obtained from PL spectroscopy. From WTEM analysis the variation in chemical composition across the interface was determined, suggesting lattice-matched interdiffusion.

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