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Objective: To explore a precise association between tumor location and lymph node (LN) biopsy algorithm in uterine confined endometrial cancer (EC). Materials and methods: Patients with EC treated in the Department of Obstetrics and Gynecology, South Branch of Fujian Provincial Hospital were included in this observational retrospective study. Based on the procedure of treatment, patients were separated to stage I (2015.07–2019.09) and stage II (2019.09–2021.9). In each stage, patients were separated to high and low-risk group by the predicted results. Patients in the high-risk group received systematic lymphadenectomy in stage I and sentinel lymph node (SLN) dissection in stage II. The efficiency of lymph node metastasis (LNM) detection rates was compared between stage I and stage II cases. Precise lymph node biopsy algorithm was also constructed based on the outcomes of stage II. Results: Overall, 43 patients, 28 in stage I and 15 in stage II, were included in the study. No recurrence or death cases had been found within follow-up terms. Based on the difference in the detection efficiency of LNM (p > 0.05), there was no difference between two stages. Thus, systematic lymphadenectomy and SLN biopsy provided similar success rates. The location of tumor site was also important for deciding whether pelvic or para-aortic SLN should be sampled for LNM. Conclusions: Precise SLN biopsy for EC confined to the uterus showed comparable LNM detection rate as systematic lymphadenectomy. EC location may be used to determine whether pelvic or para-aortic SLN sampling should be conducted for treatment.

Chromodomain-helicase-DNA-binding protein 1 (CHD1) deletion is among the most common mutations in prostate cancer (PCa), but its role remains unclear. In this study, RNA sequencing was conducted in PCa cells after clustered regularly interspaced palindromic repeat (CRISPR)/CRISPR-associated protein 9 (Cas9)-based CHD1 knockout. Gene set enrichment analysis (GSEA) indicated upregulation of hypoxia-related pathways. A subsequent study confirmed that CHD1 deletion significantly upregulated hypoxia-inducible factor 1α (HIF1α) expression. Mechanistic investigation revealed that CHD1 deletion upregulated HIF1α by transcriptionally downregulating prolyl hydroxylase domain protein 2 (PHD2), a prolyl hydroxylase catalyzing the hydroxylation of HIF1α and thus promoting its degradation by the E3 ligase von Hippel–Lindau tumor suppressor (VHL). Functional analysis showed that CHD1 deletion promoted angiogenesis and glycolysis, possibly through HIF1α target genes. Taken together, these findings indicate that CHD1 deletion enhances HIF1α expression through PHD2 downregulation and therefore promotes angiogenesis and metabolic reprogramming in PCa.

Objective Wear‐induced aseptic loosening has been accepted as one of the main reasons for failure of total hip arthroplasty. Ceramic wear debris is generated following prosthesis implantation and plays an important part in the upregulation of inflammatory factors in total hip arthroplasty. The present study investigates the influence of ceramic debris on osteoblasts and inflammatory factors. Methods Ceramic debris was prepared by mechanical grinding of an aluminum femoral head and added to cultures of MC3T3‐E subclone 14 cells at different concentrations (i.e. 0, 5, 10, and 15 μg/mL). Cell proliferation was evaluated using a Cell Counting Kit (CCK‐8), and cell differentiation was assessed by mRNA expression of alkaline phosphatase (ALP), osteocalcin (OCN), and osteopontin (OPN). In addition, cell bio‐mineralization was evaluated through alizarin red S staining, and release of tumor necrosis factor alpha (TNF‐α), interleukin‐1 beta (IL‐1β), and interleukin‐6 (IL‐6) was measured through enzyme‐linked immunosorbent assays (ELISA). Furthermore, mRNA expression of Smad1, Smad4, and Smad5 and protein expression of phosphorylated Smad1, Smad4, and Smad5 were measured by reverse transcriptase polymerase chain reaction (RT‐PCR) and western blotting. Results The ceramic debris had irregular shapes and sizes, and analysis of the size distribution using a particle size analyzer indicated that approximately 90% of the ceramic debris was smaller than 3.2 μm (2.0 ± 0.4 μm), which is considered clinically relevant. The results for mRNA expression of ALP, OCN, and OPN and alizarin red S staining indicated that cell differentiation and bio‐mineralization were significantly inhibited by the presence of ceramic debris at all tested concentrations (P < 0.05, and the values decreased gradually with the increase of ceramic debris concentration), but the results of the CCK‐8 assay showed that cell proliferation was not significantly affected (P > 0.05; there was no significant difference between the groups at 1, 3, and 5 days). In addition, the results of ELISA, RT‐PCR, and western blotting demonstrated that ceramic debris significantly promoted the release of inflammatory factors, including TNF‐α, IL‐β, and IL‐6 (P < 0.05, and the values increased gradually with the increase of ceramic debris concentration), and also greatly reduced the mRNA expression of Smad1, Smad4, and Smad5 (the values decreased gradually with the increase of ceramic debris concentration) as well as protein expression of phosphorylated Smad1, Smad4, and Smad5. Conclusion Ceramic debris may affect differentiation and bio‐mineralization of MC3T3‐E subclone 14 cells through the bone morphogenetic protein/Smad signaling pathway.

Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current—voltage and capacitance-voltage curves, the polarization sheet charge density and relative permittivity are analyzed and calculated by self-consistently solving Schrödinger's and Poisson's equations. It is found that the values of relative permittivity and polarization sheet charge density of AlN/GaN diode are both much smaller than the ones of AlGaN/GaN diode, and also much lower than the theoretical values. Moreover, by fitting the measured forward I—V curves, the extracted dislocations existing in the barrier layer of the AlN/GaN diode are found to be much more than those of the AlGaN/GaN diode. As a result, the conclusion can be made that compared with AlGaN/GaN diode the Schottky metal has an enhanced influence on the strain of the extremely thinner AlN barrier layer, which is attributed to the more dislocations. [ABSTRACT FROM AUTHOR]

Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated. Based on the measured current—voltage and capacitance—voltage curves, the electrical characteristics of AlN/GaN Schottky diode, such as Schottky barrier height, turn-on voltage, reverse breakdown voltage, ideal factor, and the current-transport mechanism, are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrödinger's and Poisson's equations. It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes. However, more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability, and causes a larger leakage current and lower reverse breakdown voltage, even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode. [ABSTRACT FROM AUTHOR]

AlGaN/GaN fin-shaped metal-oxide-semiconductor high-electron-mobility transistors (fin-MOSHEMTs) with different fin widths (300nm and 100 nm) on sapphire substrates are fabricated and characterized. High-quality self-aligned Al2O3 gate dielectric underneath an 80-nm T-shaped gate is employed by aluminum self-oxidation, which induces 4 orders of magnitude reduction in the gate leakage current. Compared with conventional planar MOSHEMTs, short channel effects of the fabricated fin-MOSHEMTs are significantly suppressed due to the trigate structure, and excellent dc characteristics are obtained, such as extremely flat output curves, smaller drain induced barrier lower, smaller subthreshold swing, more positive threshold voltage, higher transconductance and higher breakdown voltage. [ABSTRACT FROM AUTHOR]

We report dc and the first-ever measured small signal rf performance of epitaxial graphene field-effect transistors (GFETs), where the epitaxial graphene is grown by chemical vapor deposition (CVD) on a 2-inch c-plane sapphire substrate. Our epitaxial graphene material has a good flatness and uniformity due to the low carbon concentration during the graphene growth. With a gate length Lg = 100 nm, the maximum drain source current Ids and peak transconductance gm reach 0.92 A/mm and 0.143 S/mm, respectively, which are the highest results reported for GFETs directly grown on sapphire. The extrinsic cutoff frequency (fT) and maximum oscillation frequency (fmax) of the device are 12 GHz and 9.5 GHz, and up to 32 GHz and 21.5 GHz after de-embedding, respectively. Our work proves that epitaxial graphene on sapphire substrates is a promising candidate for rf electronics. [ABSTRACT FROM AUTHOR]

Electron mobility scattering mechanism in AlN/GaN heterostuctures is investigated by temperature-dependent Hall measurement, and it is found that longitudinal optical phonon scattering dominates electron mobility near room temperature while the interface roughness scattering becomes the dominant carrier scattering mechanism at low temperatures (∼100 K). Based on measured current—voltage characteristics of prepared rectangular AlN/GaN heterostructure field-effect transistor under different temperatures, the temperature-dependent variation of electron mobility under different gate biases is investigated. The polarization Coulomb field (PCF) scattering is found to become an important carrier scattering mechanism after device processing under different temperatures. Moreover, it is found that the PCF scattering is not generated from the thermal stresses, but from the piezoelectric contribution induced by the electrical field in the thin AlN barrier layer. This is attributed to the large lattice mismatch between the extreme thinner AlN barrier layer and GaN, giving rise to a stronger converse piezoelectric effect. [ABSTRACT FROM AUTHOR]