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Recent years have witnessed significant progresses in realizing skyrmions in chiral magnets1-4 and asymmetric magnetic multilayers5-13, as well as their electrical manipulation2,7,8,10. Equally important, thermal generation, manipulation and detection of skyrmions can be exploited for prototypical new architecture with integrated computation14 and energy harvesting15. It has yet to verify if skyrmions can be purely generated by heating16,17, and if their resultant direction of motion driven by temperature gradients follows the diffusion or, oppositely, the magnonic spin torque17-21. Here, we address these important issues in microstructured devices made of multilayers: (Ta_CoFeB_MgO)15, (Pt_CoFeB_MgO_Ta)15 and (Pt_Co_Ta)15 integrated with on-chip heaters, by using a full-field soft X-ray microscopy. The thermal generation of densely packed skyrmions is attributed to the low energy barrier at the device edge, together with the thermally induced morphological transition from stripe domains to skyrmions. The unidirectional diffusion of skyrmions from the hot region towards the cold region is experimentally observed. It can be theoretically explained by the combined contribution from repulsive forces between skyrmions, and thermal spin-orbit torques in competing with magnonic spin torques17,18,20,21 and entropic forces22. These thermally generated skyrmions can be further electrically detected by measuring the accompanied anomalous Nernst voltages23. The on-chip thermoelectric generation, manipulation and detection of skyrmions could open another exciting avenue for enabling skyrmionics, and promote interdisciplinary studies among spin caloritronics15, magnonics24 and skyrmionics3,4,12., Comment: All comments are welcome, Supplementary Materials are available upon request

The interplay between magnetism and topology, as exemplified in the magnetic skyrmion systems, has emerged as a rich playground for finding novel quantum phenomena and applications in future information technology. Magnetic topological insulators (TI) have attracted much recent attention, especially after the experimental realization of quantum anomalous Hall effect. Future applications of magnetic TI hinge on the accurate manipulation of magnetism and topology by external perturbations, preferably with a gate electric field. In this work, we investigate the magneto transport properties of Cr doped Bi2(SexTe1-x)3 TI across the topological quantum critical point (QCP). We find that the external gate voltage has negligible effect on the magnetic order for samples far away from the topological QCP. But for the sample near the QCP, we observe a ferromagnetic (FM) to paramagnetic (PM) phase transition driven by the gate electric field. Theoretical calculations show that a perpendicular electric field causes a shift of electronic energy levels due to the Stark effect, which induces a topological quantum phase transition and consequently a magnetic phase transition. The in situ electrical control of the topological and magnetic properties of TI shed important new lights on future topological electronic or spintronic device applications., Comment: 20 pages, 4 figures, to appear in Nature Nanotechnology

The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of Cr-doped (Bi,Sb)2Te3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e^2,accompanied by a considerable drop of the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics., Comment: 11 pages, 4 figures

We report transport studies on (Bi,Sb)2Te3 topological insulator thin films with tunable electronic band structure. We find a doping and temperature regime in which the Hall coefficient is negative indicative of electron-type carriers, whereas the Seebeck coefficient is positive indicative of hole-type carriers. This sign anomaly is due to the distinct transport behaviors of the bulk and surface states: the surface Dirac fermions dominate magnetoelectric transport while the thermoelectric effect is mainly determined by the bulk states. These findings may inspire new ideas for designing topological insulator-based high efficiency thermoelectric devices., Comment: 9 figures

It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10000 %, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices., Comment: 19 pages, 4 figures, accepted by Nano Letters, forthcoming

The Dirac-like surface states of the topological insulators (TIs) are protected by time reversal symmetry (TRS) and exhibit a host of novel properties. Introducing magnetism into TI, which breaks the TRS, is expected to create exotic topological magnetoelectric effects. A particularly intriguing phenomenon in this case is the magnetic field dependence of electrical resistance, or magnetoresistance (MR). The intricate interplay between topological protection and broken-TRS may lead to highly unconventional MR behaviour that can find unique applications in magnetic sensing and data storage. However, so far the MR of TI with spontaneously broken TRS is still poorly understood, mainly due to the lack of well-controlled experiments. In this work, we investigate the magneto transport properties of a ferromagnetic TI thin film fabricated into a field effect transistor device. We observe an unusually complex evolution of MR when the Fermi level (EF) is tuned across the Dirac point (DP) by gate voltage. In particular, MR tends to be positive when EF lies close to the DP but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture for localization, but is intimately correlated with the gate-tuned magnetic order. We show that the underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative MR. The simultaneous electrical control of magnetic order and magneto transport facilitates future TI-based spintronic devices., Comment: 4 figures, supplementary information included

We use scanning tunneling microscopy to investigate the (001) surface of cleaved SmB6 Kondo insulator. Variable temperature dI/dV spectroscopy up to 60 K reveals a gap-like density of state suppression around the Fermi level, which is due to the hybridization between the itinerant Sm 5d band and localized Sm 4f band. At temperatures below 40 K, a sharp coherence peak emerges within the hybridization gap near the lower gap edge. We propose that the in-gap resonance state is due to a collective excitation in magnetic origin with the presence of spin-orbital coupling and mixed valence fluctuations. These results shed new lights on the electronic structure evolution and transport anomaly in SmB6., Comment: 4 figures, supplementary materials included. To appear in Physical Review Letters

Heterostructure based interface engineering has been proved an effective method for finding new superconducting systems and raising superconductivity transition temperature (TC). In previous work on one unit-cell (UC) thick FeSe films on SrTiO3 (STO) substrate, a superconducting-like energy gap as large as 20 meV, was revealed by in situ scanning tunneling microscopy/spectroscopy (STM/STS). Angle resolved photoemission spectroscopy (ARPES) further revealed a nearly isotropic gap of above 15 meV, which closes at a temperature of ~ 65 K. If this transition is indeed the superconducting transition, then the 1-UC FeSe represents the thinnest high TC superconductor discovered so far. However, up to date direct transport measurement of the 1-UC FeSe films has not been reported, mainly because growth of large scale 1-UC FeSe films is challenging and the 1-UC FeSe films are too thin to survive in atmosphere. In this work, we successfully prepared 1-UC FeSe films on insulating STO substrates with non-superconducting FeTe protection layers. By direct transport and magnetic measurements, we provide definitive evidence for high temperature superconductivity in the 1-UC FeSe films with an onset TC above 40 K and a extremely large critical current density JC ~ 1.7*106 A/cm2 at 2 K. Our work may pave the way to enhancing and tailoring superconductivity by interface engineering.