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163 results on '"Guo, J. C."'

1. PR-NET: Leveraging Pathway Refined Network Structures for Prostate Cancer Patient Condition Prediction

Author

Li, R., Liu, J., Deng, X. L., Liu, X., Guo, J. C., Wu, W. Y., and Yang, L.

Subjects
Computer Science - Machine Learning, Quantitative Biology - Quantitative Methods
Abstract

The diagnosis and monitoring of Castrate Resistant Prostate Cancer (CRPC) are crucial for cancer patients, but the current models (such as P-NET) have limitations in terms of parameter count, generalization, and cost. To address the issue, we develop a more accurate and efficient Prostate Cancer patient condition prediction model, named PR-NET. By compressing and optimizing the network structure of P-NET, the model complexity is reduced while maintaining high accuracy and interpretability. The PR-NET demonstrated superior performance in predicting prostate cancer patient outcomes, outshining P-NET and six other traditional models with a significant margin. In our rigorous evaluation, PR-NET not only achieved impressive average AUC and Recall scores of 0.94 and 0.83, respectively, on known data but also maintained robust generalizability on five unknown datasets with a higher average AUC of 0.73 and Recall of 0.72, compared to P-NET's 0.68 and 0.5. PR-NET's efficiency was evidenced by its shorter average training and inference times, and its gene-level analysis revealed 46 key genes, demonstrating its enhanced predictive power and efficiency in identifying critical biomarkers for prostate cancer. Future research can further expand its application domains and optimize the model's performance and reliability.

Published
2024

3. STCF Conceptual Design Report: Volume 1 -- Physics & Detector

Author

Achasov, M., Ai, X. C., Aliberti, R., An, L. P., An, Q., Bai, X. Z., Bai, Y., Bakina, O., Barnyakov, A., Blinov, V., Bobrovnikov, V., Bodrov, D., Bogomyagkov, A., Bondar, A., Boyko, I., Bu, Z. H., Cai, F. M., Cai, H., Cao, J. J., Cao, Q. H., Cao, Z., Chang, Q., Chao, K. T., Chen, D. Y., Chen, H., Chen, H. X., Chen, J. F., Chen, K., Chen, L. L., Chen, P., Chen, S. L., Chen, S. M., Chen, S., Chen, S. P., Chen, W., Chen, X. F., Chen, X., Chen, Y., Chen, Y. Q., Cheng, H. Y., Cheng, J., Cheng, S., Dai, J. P., Dai, L. Y., Dai, X. C., Dedovich, D., Denig, A., Denisenko, I., Ding, D. Z., Dong, L. Y., Dong, W. H., Druzhinin, V., Du, D. S., Du, Y. J., Du, Z. G., Duan, L. M., Epifanov, D., Fan, Y. L., Fang, S. S., Fang, Z. J., Fedotovich, G., Feng, C. Q., Feng, X., Feng, Y. T., Fu, J. L., Gao, J., Ge, P. S., Geng, C. Q., Geng, L. S., Gilman, A., Gong, L., Gong, T., Gradl, W., Gu, J. L., Escalante, A. G., Gui, L. C., Guo, F. K., Guo, J. C., Guo, J., Guo, Y. P., Guo, Z. H., Guskov, A., Han, K. L., Han, L., Han, M., Hao, X. Q., He, J. B., He, S. Q., He, X. G., He, Y. L., He, Z. B., Heng, Z. X., Hou, B. L., Hou, T. J., Hou, Y. R., Hu, C. Y., Hu, H. M., Hu, K., Hu, R. J., Hu, X. H., Hu, Y. C., Hua, J., Huang, G. S., Huang, J. S., Huang, M., Huang, Q. Y., Huang, W. Q., Huang, X. T., Huang, X. J., Huang, Y. B., Huang, Y. S., Hüsken, N., Ivanov, V., Ji, Q. P., Jia, J. J., Jia, S., Jia, Z. K., Jiang, H. B., Jiang, J., Jiang, S. Z., Jiao, J. B., Jiao, Z., Jing, H. J., Kang, X. L., Kang, X. S., Ke, B. C., Kenzie, M., Khoukaz, A., Koop, I., Kravchenko, E., Kuzmin, A., Lei, Y., Levichev, E., Li, C. H., Li, C., Li, D. Y., Li, F., Li, G., Li, H. B., Li, H., Li, H. N., Li, H. J., Li, H. L., Li, J. M., Li, J., Li, L., Li, L. Y., Li, N., Li, P. R., Li, R. H., Li, S., Li, T., Li, W. J., Li, X. H., Li, X. Q., Li, Y., Li, Y. Y., Li, Z. J., Liang, H., Liang, J. H., Liao, G. R., Liao, L. Z., Liao, Y., Lin, C. X., Lin, X. S., Liu, B. J., Liu, C. W., Liu, D., Liu, F., Liu, G. M., Liu, H. B., Liu, J., Liu, J. J., Liu, J. B., Liu, K., Liu, K. Y., Liu, L., Liu, Q., Liu, S. B., Liu, T., Liu, X., Liu, Y. W., Liu, Y., Liu, Y. L., Liu, Z. Q., Liu, Z. Y., Liu, Z. W., Logashenko, I., Long, Y., Lu, C. G., Lu, N., Lü, Q. F., Lu, Y., Lv, Z., Lukin, P., Luo, F. J., Luo, T., Luo, X. F., Lyu, H. J., Lyu, X. R., Ma, J. P., Ma, P., Ma, Y., Maas, F., Malde, S., Matvienko, D., Meng, Z. X., Mitchell, R., Dias, J. M., Nefediev, A., Nefedov, Y., Olsen, S. L., Ouyang, Q., Pakhlov, P., Pakhlova, G., Pan, X., Pan, Y., Passemar, E., Pei, Y. P., Peng, H. P., Peng, L., Peng, X. Y., Peng, X. J., Peters, K., Pivovarov, S., Pyata, E., Qi, B. B., Qi, Y. Q., Qian, W. B., Qian, Y., Qiao, C. F., Qin, J. J., Qin, L. Q., Qin, X. S., Qiu, T. L., Rademacker, J., Redmer, C. F., Sang, H. Y., Saur, M., Shan, W., Shan, X. Y., Shang, L. L., Shao, M., Shekhtman, L., Shen, C. P., Shen, J. M., Shen, Z. T., Shi, H. C., Shi, X. D., Shwartz, B., Sokolov, A., Song, J. J., Song, W. M., Song, Y., Song, Y. X., Sukharev, A., Sun, J. F., Sun, L., Sun, X. M., Sun, Y. J., Sun, Z. P., Tang, J., Tang, S. S., Tang, Z. B., Tian, C. H., Tian, J. S., Tikhonov, Y., Todyshev, K., Uglov, T., Vorobyev, V., Wan, B. D., Wang, B. L., Wang, B., Wang, D. Y., Wang, G. Y., Wang, G. L., Wang, H. L., Wang, J., Wang, J. H., Wang, J. C., Wang, M. L., Wang, R., Wang, S. B., Wang, W., Wang, W. P., Wang, X. C., Wang, X. D., Wang, X. L., Wang, X. P., Wang, X. F., Wang, Y. D., Wang, Y. P., Wang, Y. Q., Wang, Y. L., Wang, Y. G., Wang, Z. Y., Wang, Z. L., Wang, Z. G., Wei, D. H., Wei, X. L., Wei, X. M., Wen, Q. G., Wen, X. J., Wilkinson, G., Wu, B., Wu, J. J., Wu, L., Wu, P. W., Wu, T. W., Wu, Y. S., Xia, L., Xiang, T., Xiao, C. W., Xiao, D., Xiao, M., Xie, Y. H., Xing, Y., Xing, Z. Z., Xiong, X. N., Xu, F. R., Xu, J., Xu, L. L., Xu, Q. N., Xu, X. C., Xu, X. P., Xu, Y. C., Xu, Y. P., Xu, Y., Xu, Z. Z., Xuan, D. W., Xue, F. F., Yan, L., Yan, M. J., Yan, W. B., Yan, W. C., Yan, X. S., Yang, B. F., Yang, C., Yang, H. J., Yang, H. R., Yang, H. T., Yang, J. F., Yang, S. L., Yang, Y. D., Yang, Y. H., Yang, Y. S., Yang, Y. L., Yang, Z. Y., Yao, D. L., Yin, H., Yin, X. H., Yokozaki, N., You, S. Y., You, Z. Y., Yu, C. X., Yu, F. S., Yu, G. L., Yu, H. L., Yu, J. S., Yu, J. Q., Yuan, L., Yuan, X. B., Yue, Y. F., Zeng, M., Zeng, S., Zhang, A. L., Zhang, B. W., Zhang, G. Y., Zhang, G. Q., Zhang, H. J., Zhang, H. B., Zhang, J. Y., Zhang, J. L., Zhang, J., Zhang, L., Zhang, L. M., Zhang, R., Zhang, S. L., Zhang, T., Zhang, X., Zhang, Y., Zhang, Y. X., Zhang, Y. T., Zhang, Y. F., Zhang, Y. C., Zhang, Y. M., Zhang, Y. L., Zhang, Z. H., Zhang, Z. Y., Zhao, H. Y., Zhao, J., Zhao, L., Zhao, M. G., Zhao, Q., Zhao, R. G., Zhao, R. P., Zhao, Z. G., Zhao, Z. X., Zhemchugov, A., Zheng, B., Zheng, L., Zheng, Q. B., Zheng, R., Zheng, Y. H., Zhong, X. H., Zhou, H. J., Zhou, H. Q., Zhou, H., Zhou, S. H., Zhou, X., Zhou, X. K., Zhou, X. R., Zhou, Y. L., Zhou, Y., Zhou, Y. X., Zhou, Z. Y., Zhu, J. Y., Zhu, K., Zhu, R. D., Zhu, R. L., Zhu, S. H., Zhu, Y. C., Zhu, Z. A., Zhukova, V., Zhulanov, V., Zou, B. S., and Zuo, Y. B.

Subjects
High Energy Physics - Experiment, High Energy Physics - Phenomenology, Physics - Instrumentation and Detectors
Abstract

The Super $\tau$-Charm facility (STCF) is an electron-positron collider proposed by the Chinese particle physics community. It is designed to operate in a center-of-mass energy range from 2 to 7 GeV with a peak luminosity of $0.5\times 10^{35}{\rm cm}^{-2}{\rm s}^{-1}$ or higher. The STCF will produce a data sample about a factor of 100 larger than that by the present $\tau$-Charm factory -- the BEPCII, providing a unique platform for exploring the asymmetry of matter-antimatter (charge-parity violation), in-depth studies of the internal structure of hadrons and the nature of non-perturbative strong interactions, as well as searching for exotic hadrons and physics beyond the Standard Model. The STCF project in China is under development with an extensive R\&D program. This document presents the physics opportunities at the STCF, describes conceptual designs of the STCF detector system, and discusses future plans for detector R\&D and physics case studies.

Published
2023
Full Text
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5. STCF conceptual design report (Volume 1): Physics & detector

Author

Achasov, M., Ai, X. C., An, L. P., Aliberti, R., An, Q., Bai, X. Z., Bai, Y., Bakina, O., Barnyakov, A., Blinov, V., Bobrovnikov, V., Bodrov, D., Bogomyagkov, A., Bondar, A., Boyko, I., Bu, Z. H., Cai, F. M., Cai, H., Cao, J. J., Cao, Q. H., Cao, X., Cao, Z., Chang, Q., Chao, K. T., Chen, D. Y., Chen, H., Chen, H. X., Chen, J. F., Chen, K., Chen, L. L., Chen, P., Chen, S. L., Chen, S. M., Chen, S., Chen, S. P., Chen, W., Chen, X., Chen, X. F., Chen, X. R., Chen, Y., Chen, Y. Q., Cheng, H. Y., Cheng, J., Cheng, S., Cheng, T. G., Dai, J. P., Dai, L. Y., Dai, X. C., Dedovich, D., Denig, A., Denisenko, I., Dias, J. M., Ding, D. Z., Dong, L. Y., Dong, W. H., Druzhinin, V., Du, D. S., Du, Y. J., Du, Z. G., Duan, L. M., Epifanov, D., Fan, Y. L., Fang, S. S., Fang, Z. J., Fedotovich, G., Feng, C. Q., Feng, X., Feng, Y. T., Fu, J. L., Gao, J., Gao, Y. N., Ge, P. S., Geng, C. Q., Geng, L. S., Gilman, A., Gong, L., Gong, T., Gou, B., Gradl, W., Gu, J. L., Guevara, A., Gui, L. C., Guo, A. Q., Guo, F. K., Guo, J. C., Guo, J., Guo, Y. P., Guo, Z. H., Guskov, A., Han, K. L., Han, L., Han, M., Hao, X. Q., He, J. B., He, S. Q., He, X. G., He, Y. L., He, Z. B., Heng, Z. X., Hou, B. L., Hou, T. J., Hou, Y. R., Hu, C. Y., Hu, H. M., Hu, K., Hu, R. J., Hu, W. H., Hu, X. H., Hu, Y. C., Hua, J., Huang, G. S., Huang, J. S., Huang, M., Huang, Q. Y., Huang, W. Q., Huang, X. T., Huang, X. J., Huang, Y. B., Huang, Y. S., Hüsken, N., Ivanov, V., Ji, Q. P., Jia, J. J., Jia, S., Jia, Z. K., Jiang, H. B., Jiang, J., Jiang, S. Z., Jiao, J. B., Jiao, Z., Jing, H. J., Kang, X. L., Kang, X. S., Ke, B. C., Kenzie, M., Khoukaz, A., Koop, I., Kravchenko, E., Kuzmin, A., Lei, Y., Levichev, E., Li, C. H., Li, C., Li, D. Y., Li, F., Li, G., Li, G., Li, H. B., Li, H., Li, H. N., Li, H. J., Li, H. L., Li, J. M., Li, J., Li, L., Li, L., Li, L. Y., Li, N., Li, P. R., Li, R. H., Li, S., Li, T., Li, W. J., Li, X., Li, X. H., Li, X. Q., Li, X. H., Li, Y., Li, Y. Y., Li, Z. J., Liang, H., Liang, J. H., Liang, Y. T., Liao, G. R., Liao, L. Z., Liao, Y., Lin, C. X., Lin, D. X., Lin, X. S., Liu, B. J., Liu, C. W., Liu, D., Liu, F., Liu, G. M., Liu, H. B., Liu, J., Liu, J. J., Liu, J. B., Liu, K., Liu, K. Y., Liu, K., Liu, L., Liu, Q., Liu, S. B., Liu, T., Liu, X., Liu, Y. W., Liu, Y., Liu, Y. L., Liu, Z. Q., Liu, Z. Y., Liu, Z. W., Logashenko, I., Long, Y., Lu, C. G., Lu, J. X., Lu, N., Lü, Q. F., Lu, Y., Lu, Y., Lu, Z., Lukin, P., Luo, F. J., Luo, T., Luo, X. F., Lyu, H. J., Lyu, X. R., Ma, J. P., Ma, P., Ma, Y., Ma, Y. M., Maas, F., Malde, S., Matvienko, D., Meng, Z. X., Mitchell, R., Nefediev, A., Nefedov, Y., Olsen, S. L., Ouyang, Q., Pakhlov, P., Pakhlova, G., Pan, X., Pan, Y., Passemar, E., Pei, Y. P., Peng, H. P., Peng, L., Peng, X. Y., Peng, X. J., Peters, K., Pivovarov, S., Pyata, E., Qi, B. B., Qi, Y. Q., Qian, W. B., Qian, Y., Qiao, C. F., Qin, J. J., Qin, J. J., Qin, L. Q., Qin, X. S., Qiu, T. L., Rademacker, J., Redmer, C. F., Sang, H. Y., Saur, M., Shan, W., Shan, X. Y., Shang, L. L., Shao, M., Shekhtman, L., Shen, C. P., Shen, J. M., Shen, Z. T., Shi, H. C., Shi, X. D., Shwartz, B., Sokolov, A., Song, J. J., Song, W. M., Song, Y., Song, Y. X., Sukharev, A., Sun, J. F., Sun, L., Sun, X. M., Sun, Y. J., Sun, Z. P., Tang, J., Tang, S. S., Tang, Z. B., Tian, C. H., Tian, J. S., Tian, Y., Tikhonov, Y., Todyshev, K., Uglov, T., Vorobyev, V., Wan, B. D., Wang, B. L., Wang, B., Wang, D. Y., Wang, G. Y., Wang, G. L., Wang, H. L., Wang, J., Wang, J. H., Wang, J. C., Wang, M. L., Wang, R., Wang, R., Wang, S. B., Wang, W., Wang, W. P., Wang, X. C., Wang, X. D., Wang, X. L., Wang, X. L., Wang, X. P., Wang, X. F., Wang, Y. D., Wang, Y. P., Wang, Y. Q., Wang, Y. L., Wang, Y. G., Wang, Z. Y., Wang, Z. Y., Wang, Z. L., Wang, Z. G., Wei, D. H., Wei, X. L., Wei, X. M., Wen, Q. G., Wen, X. J., Wilkinson, G., Wu, B., Wu, J. J., Wu, L., Wu, P., Wu, T. W., Wu, Y. S., Xia, L., Xiang, T., Xiao, C. W., Xiao, D., Xiao, M., Xie, K. P., Xie, Y. H., Xing, Y., Xing, Z. Z., Xiong, X. N., Xu, F. R., Xu, J., Xu, L. L., Xu, Q. N., Xu, X. C., Xu, X. P., Xu, Y. C., Xu, Y. P., Xu, Y., Xu, Z. Z., Xuan, D. W., Xue, F. F., Yan, L., Yan, M. J., Yan, W. B., Yan, W. C., Yan, X. S., Yang, B. F., Yang, C., Yang, H. J., Yang, H. R., Yang, H. T., Yang, J. F., Yang, S. L., Yang, Y. D., Yang, Y. H., Yang, Y. S., Yang, Y. L., Yang, Z. W., Yang, Z. Y., Yao, D. L., Yin, H., Yin, X. H., Yokozaki, N., You, S. Y., You, Z. Y., Yu, C. X., Yu, F. S., Yu, G. L., Yu, H. L., Yu, J. S., Yu, J. Q., Yuan, L., Yuan, X. B., Yuan, Z. Y., Yue, Y. F., Zeng, M., Zeng, S., Zhang, A. L., Zhang, B. W., Zhang, G. Y., Zhang, G. Q., Zhang, H. J., Zhang, H. B., Zhang, J. Y., Zhang, J. L., Zhang, J., Zhang, L., Zhang, L. M., Zhang, Q. A., Zhang, R., Zhang, S. L., Zhang, T., Zhang, X., Zhang, Y., Zhang, Y. J., Zhang, Y. X., Zhang, Y. T., Zhang, Y. F., Zhang, Y. C., Zhang, Y., Zhang, Y., Zhang, Y. M., Zhang, Y. L., Zhang, Z. H., Zhang, Z. Y., Zhang, Z. Y., Zhao, H. Y., Zhao, J., Zhao, L., Zhao, M. G., Zhao, Q., Zhao, R. G., Zhao, R. P., Zhao, Y. X., Zhao, Z. G., Zhao, Z. X., Zhemchugov, A., Zheng, B., Zheng, L., Zheng, Q. B., Zheng, R., Zheng, Y. H., Zhong, X. H., Zhou, H. J., Zhou, H. Q., Zhou, H., Zhou, S. H., Zhou, X., Zhou, X. K., Zhou, X. P., Zhou, X. R., Zhou, Y. L., Zhou, Y., Zhou, Y. X., Zhou, Z. Y., Zhu, J. Y., Zhu, K., Zhu, R. D., Zhu, R. L., Zhu, S. H., Zhu, Y. C., Zhu, Z. A., Zhukova, V., Zhulanov, V., Zou, B. S., and Zuo, Y. B.

Published
2024
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8. Enhanced energy localization and harvesting by design of phononic crystal defects.

Author

Li, J. R., Guo, J. C., and Zhang, Z.

Subjects
*PHONONIC crystals, *CRYSTAL defects, *ENERGY harvesting, *GEOMETRIC shapes, *UNIT cell, *STRUCTURAL optimization, *BAND gaps
Abstract

A new arrayed phononic crystal (PnCs) with defects is proposed. The supercell method is used to calculate the band structures. Energy localization can be found around the defects and energy harvesting (EH) can be realized by the attachment of piezoelectric patches around the designed defects. The EH can be concentrated on the frequency of 64–64.1 kHz with output voltage of 8.22 V. By the change of the piezoelectric patch from circular to oval shape, the frequency of EH can be changed. By the optimization of geometric shapes of piezoelectric patches and the optimal design of unit cell, the EH output voltage can be increased to 4.21 times higher than the original state and the EH frequency band is effectively broadened. The amplification factor can be increased to 327.13. [ABSTRACT FROM AUTHOR]

Published
2024
Full Text
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11. STCF conceptual design report (Volume 1): Physics & detector

Author

Achasov, M., primary, Ai, X. C., additional, An, L. P., additional, Aliberti, R., additional, An, Q., additional, Bai, X. Z., additional, Bai, Y., additional, Bakina, O., additional, Barnyakov, A., additional, Blinov, V., additional, Bobrovnikov, V., additional, Bodrov, D., additional, Bogomyagkov, A., additional, Bondar, A., additional, Boyko, I., additional, Bu, Z. H., additional, Cai, F. M., additional, Cai, H., additional, Cao, J. J., additional, Cao, Q. H., additional, Cao, X., additional, Cao, Z., additional, Chang, Q., additional, Chao, K. T., additional, Chen, D. Y., additional, Chen, H., additional, Chen, H. X., additional, Chen, J. F., additional, Chen, K., additional, Chen, L. L., additional, Chen, P., additional, Chen, S. L., additional, Chen, S. M., additional, Chen, S., additional, Chen, S. P., additional, Chen, W., additional, Chen, X., additional, Chen, X. F., additional, Chen, X. R., additional, Chen, Y., additional, Chen, Y. Q., additional, Cheng, H. Y., additional, Cheng, J., additional, Cheng, S., additional, Cheng, T. G., additional, Dai, J. P., additional, Dai, L. Y., additional, Dai, X. C., additional, Dedovich, D., additional, Denig, A., additional, Denisenko, I., additional, Dias, J. M., additional, Ding, D. Z., additional, Dong, L. Y., additional, Dong, W. H., additional, Druzhinin, V., additional, Du, D. S., additional, Du, Y. J., additional, Du, Z. G., additional, Duan, L. M., additional, Epifanov, D., additional, Fan, Y. L., additional, Fang, S. S., additional, Fang, Z. J., additional, Fedotovich, G., additional, Feng, C. Q., additional, Feng, X., additional, Feng, Y. T., additional, Fu, J. L., additional, Gao, J., additional, Gao, Y. N., additional, Ge, P. S., additional, Geng, C. Q., additional, Geng, L. S., additional, Gilman, A., additional, Gong, L., additional, Gong, T., additional, Gou, B., additional, Gradl, W., additional, Gu, J. L., additional, Guevara, A., additional, Gui, L. C., additional, Guo, A. Q., additional, Guo, F. K., additional, Guo, J. C., additional, Guo, J., additional, Guo, Y. P., additional, Guo, Z. H., additional, Guskov, A., additional, Han, K. L., additional, Han, L., additional, Han, M., additional, Hao, X. Q., additional, He, J. B., additional, He, S. Q., additional, He, X. G., additional, He, Y. L., additional, He, Z. B., additional, Heng, Z. X., additional, Hou, B. L., additional, Hou, T. J., additional, Hou, Y. R., additional, Hu, C. Y., additional, Hu, H. M., additional, Hu, K., additional, Hu, R. J., additional, Hu, W. H., additional, Hu, X. H., additional, Hu, Y. C., additional, Hua, J., additional, Huang, G. S., additional, Huang, J. S., additional, Huang, M., additional, Huang, Q. Y., additional, Huang, W. Q., additional, Huang, X. T., additional, Huang, X. J., additional, Huang, Y. B., additional, Huang, Y. S., additional, Hüsken, N., additional, Ivanov, V., additional, Ji, Q. P., additional, Jia, J. J., additional, Jia, S., additional, Jia, Z. K., additional, Jiang, H. B., additional, Jiang, J., additional, Jiang, S. Z., additional, Jiao, J. B., additional, Jiao, Z., additional, Jing, H. J., additional, Kang, X. L., additional, Kang, X. S., additional, Ke, B. C., additional, Kenzie, M., additional, Khoukaz, A., additional, Koop, I., additional, Kravchenko, E., additional, Kuzmin, A., additional, Lei, Y., additional, Levichev, E., additional, Li, C. H., additional, Li, C., additional, Li, D. Y., additional, Li, F., additional, Li, G., additional, Li, H. B., additional, Li, H., additional, Li, H. N., additional, Li, H. J., additional, Li, H. L., additional, Li, J. M., additional, Li, J., additional, Li, L., additional, Li, L. Y., additional, Li, N., additional, Li, P. R., additional, Li, R. H., additional, Li, S., additional, Li, T., additional, Li, W. J., additional, Li, X., additional, Li, X. H., additional, Li, X. Q., additional, Li, Y., additional, Li, Y. Y., additional, Li, Z. J., additional, Liang, H., additional, Liang, J. H., additional, Liang, Y. T., additional, Liao, G. R., additional, Liao, L. Z., additional, Liao, Y., additional, Lin, C. X., additional, Lin, D. X., additional, Lin, X. S., additional, Liu, B. J., additional, Liu, C. W., additional, Liu, D., additional, Liu, F., additional, Liu, G. M., additional, Liu, H. B., additional, Liu, J., additional, Liu, J. J., additional, Liu, J. B., additional, Liu, K., additional, Liu, K. Y., additional, Liu, L., additional, Liu, Q., additional, Liu, S. B., additional, Liu, T., additional, Liu, X., additional, Liu, Y. W., additional, Liu, Y., additional, Liu, Y. L., additional, Liu, Z. Q., additional, Liu, Z. Y., additional, Liu, Z. W., additional, Logashenko, I., additional, Long, Y., additional, Lu, C. G., additional, Lu, J. X., additional, Lu, N., additional, Lü, Q. F., additional, Lu, Y., additional, Lu, Z., additional, Lukin, P., additional, Luo, F. J., additional, Luo, T., additional, Luo, X. F., additional, Lyu, H. J., additional, Lyu, X. R., additional, Ma, J. P., additional, Ma, P., additional, Ma, Y., additional, Ma, Y. M., additional, Maas, F., additional, Malde, S., additional, Matvienko, D., additional, Meng, Z. X., additional, Mitchell, R., additional, Nefediev, A., additional, Nefedov, Y., additional, Olsen, S. L., additional, Ouyang, Q., additional, Pakhlov, P., additional, Pakhlova, G., additional, Pan, X., additional, Pan, Y., additional, Passemar, E., additional, Pei, Y. P., additional, Peng, H. P., additional, Peng, L., additional, Peng, X. Y., additional, Peng, X. J., additional, Peters, K., additional, Pivovarov, S., additional, Pyata, E., additional, Qi, B. B., additional, Qi, Y. Q., additional, Qian, W. B., additional, Qian, Y., additional, Qiao, C. F., additional, Qin, J. J., additional, Qin, L. Q., additional, Qin, X. S., additional, Qiu, T. L., additional, Rademacker, J., additional, Redmer, C. F., additional, Sang, H. 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Published
2023
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14. Numerical Study on Aerodynamic Characteristics of Tail-stabilized Projectile with Asymmetrical Diversion Groove.

Author

Luo, A. A., Xiao, Q. K., Liu, X., Guo, J. C., and Zhang, Y. H.

Subjects
AERODYNAMIC load, DIVERSION structures (Hydraulic engineering), MACH number, PROJECTILES, LAMINAR flow, DRAG coefficient
Abstract

A surface diversion groove with a specific geometry and position can influence the laminar flow characteristics of a projectile, which may affect the flight trajectory of an aircraft. The asymmetric flow field around the projectile can be induced by the diversion groove, which can produce an obvious aerodynamic force and moment at the projectile nose for trajectory correction. This study applied a diversion groove structure to the nose of tail-stabilized projectiles to investigate its impact on the aerodynamic characteristics of the projectile. The mathematical expressions for the aerodynamic force and aerodynamic coefficient were established theoretically. The change in the aerodynamic coefficient as a function of the phase angle of the diversion groove was determined. A parametric simulation was employed to investigate how the diversion groove affects the aerodynamic attributes of the projectile across various Mach numbers and angles of attack. The simulation results are consistent with the variation trends of aerodynamic forces and moments with respect to the phase angle of the diverter groove, as predicted by the static mathematical model. These findings demonstrate that the variation trends of the lift coefficient and pitching moment coefficient with respect to the angle ß approximate a cosine function. Meanwhile, the variation trends of the yaw force coefficient and yaw moment coefficient with respect to the angle ß approximate a sine function. The tail-stabilized projectile with asymmetrical diversion groove achieved a reduction of 1.2% in drag coefficient compared with that of the canard rudder corrective projectile, while the lift coefficient and pitch moment coefficient were increased by 6.4% and 16%, respectively, in the subsonic regime. The static margin of the projectile ranging from 13% to 16%. This study offers valuable insights for the design of corrective structures with diversion grooves and trajectory control. [ABSTRACT FROM AUTHOR]

Published
2024
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25. Optimization Method of Hydraulic Fracturing Design for Horizontal Shale Gas Well Based on Artificial Neural Network and Genetic Algorithm

Author

Luo, Y., additional, Guo, J. C., additional, Zeng, F. H., additional, Lu, C., additional, Wang, R., additional, Guan, B., additional, Ren, Y., additional, Yuan, C. M., additional, He, L., additional, Zhou, G. Q., additional, Wang, J. G., additional, Liu, Y. H., additional, Wang, X. S., additional, and Shan, X., additional

Published
2022
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29. APPLICATION OF POTASSIUM FULVIC ACID IMPROVING TOLERANCE OF SECALE CEREALE L. SEEDLINGS TO CADMIUM STRESS AND FREEZE-THAW ENVIRONMENT.

Author

PAN, X. Y., BAO, G. Z., YANG, Y. N., ZHANG, X., GUO, J. C., FAN, X. Y., XIANG, T., LI, G. M., and ZHAO, H. W.

Subjects
RYE, FULVIC acids, CADMIUM, POTASSIUM, SUPEROXIDE dismutase, PHOTOSYNTHETIC rates
Abstract

Freeze-thaw (FT) and cadmium (Cd) are the main ecological stress factors for plant growth in high-latitude regions. Potassium fulvic acid (FAK), a humic acid fertilizer, is widely used and can help plant resist abiotic stresses in farmland ecosystems. Through hydroponic experiments, this study investigated the physiological response characteristics of rye seedlings under FT and Cd compound stress and the potential protective effect of FAK on the rye seedlings. The results demonstrated that FT and Cd compound stress decreased the net photosynthetic rate (Pn) and transpiration rate (Tr) of rye seedlings, and FAK cannot relieve this decrease effectively. However, FAK enhanced the tolerance of rye seedlings to adverse stress, leading to significant increases in peroxidase (POD), superoxide dismutase (SOD), soluble protein (SP), and soluble sugar (SS), and a reduction in malondialdehyde (MDA) content. Therefore, it demonstrated that FAK has a protective effect on rye seedlings in FT and Cd compound stress, reducing the physiological damage to the seedlings. This study provides a theoretical basis for plants in northern high-latitude regions to avoid ecological disasters. [ABSTRACT FROM AUTHOR]

Published
2023
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34. Band Gap Design of Beam-Supported Phononic Crystal by Regulation and Control of Beam Bending Stiffness

Author

Zhang, L., Li, J. R., Guo, J. C., and Zhang, Z.

Abstract

Purpose: Bending stiffness is an important physical parameter of beam determining the band gap (BG) characteristics for beam-supported phononic crystal (PnCs). To reveal the role of bending stiffness on PnCs design, two-component PnCs is designed in which a solid mass block serves as scatterer and beams are used to connect the scatterer with the matrix. Method: Finite element method was used to obtain the BG characteristics for the designed beam-supported PnCs. Different cross sections are designed with different bending stiffness for vibration control in wave transmissions. Results: The BG width of I-shaped beam-supported PnCs is wider than rectangular section, cross-shaped section, box section, and H-shaped section. Compared with rectangular section beam-supported PnCs, the bending stiffness of the I-section beam in ydirection and zdirection decreases by 34.4% and 75.5%. The I-shaped beam-supported PnCs reveal two BGs due to lower bending stiffness. One is 4.2 kHz, and the other is 12.3 kHz. The center frequency of the first band gap is 17.2 kHz and the second is 34.4 kHz. The effects of the elastic modulus and density of the material on the bending stiffness and the band gap characteristic in the unit cell are further discussed. Conclusion: The geometry of the cross section, the elastic modulus and the density of material can be used to design the bending stiffness. The BG characteristics can be designed by the regulation and control of the bending stiffness in beam-supported PnCs.

Published
2023
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45. Study on accumulated crystallization characteristics of amorphous Ge2Sb2Te5 induced by multi-pulsed laser irradiations with different fluences.

Author

Fan, T, Liu, F R, Li, W Q, Guo, J C, Wang, Y H, Sun, N X, and Liu, F

Subjects
CRYSTALLIZATION, LASER pulses, LASERS, IRRADIATION, GRAIN size, PULSED lasers
Abstract

Accumulated crystallization characteristics of amorphous Ge2Sb2Te5 (a-GST) films induced by multi-pulsed laser irradiations with different fluences were investigated by x-ray diffraction (XRD), Raman spectroscopy and spectrophotometer. Solid-state transformation was performed at low fluence (LF, 30.5 mJ cm−2), whereas melting-cooling transformation dominated at medium and high fluence (MF, 45.7 and HF, 61 mJ cm−2). Solid-state transformation induced by subsequent LF pulses promoted the growth and coalescence of grains, linearly increasing the average grain size, accordingly causing blue-shifts of the Raman spectral peaks. For MF/HF pulse irradiated films, the relatively high laser fluence increased the melting depth and reduced the volume fraction of the crystalline state induced by individual pulses, thereby increasing the threshold of laser pulse numbers for XRD detectable crystallization. However, the remelting depth induced by subsequent MF/HF laser pulse progressively decreased. The remelting-recrystallization process refined grain sizes, which improved the red-shifts of Raman spectral peaks. Moreover, optical contrast increased dramatically compared to single laser irradiation and five-level storage could be realized for a linear increase of optical contrast. The present study is fundamental for realizing the potential of multi-level devices. [ABSTRACT FROM AUTHOR]

Published
2020
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