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1. Reliable and Broad-range Layer Identification of Au-assisted Exfoliated Large Area MoS$_2$ and WS$_2$ Using Reflection Spectroscopic Fingerprints

5. A 220 GHz GaN‐based monolithic integrated frequency doubler delivering over 0.25 W output power.

23. Reliable and broad-range layer identification of Au-assisted exfoliated large area MoS2 and WS2 using reflection spectroscopic fingerprints.

24. Transparent nanofluids with high thermal conductivity for improved convective thermal management of optoelectronic devices.

28. 3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology

29. Thermal simulation of high power GaN-on-diamond substrates for HEMT applications

30. Impact of Thermal Boundary Resistance on the Thermal Design of GaN-on-Diamond HEMTs

35. First principles study of structural, phonon, optical, elastic and electronic properties of Y3Al5O12

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