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Your search keyword '"Guo, Hao-min"' showing total 14 results
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14 results on '"Guo, Hao-min"'

6. Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode

Author

Yu, Cheng-Hao, Yang, Hui, Zhao, Wen-Sheng, Wang, Da-Wei, Guo, Hao-Min, Hu, Yue, Wu, Xiao-Dong, and Tan, Xin

Abstract

This paper presents the 2-D numerical simulation results of the ion-induced single-event burnout (SEB) in the conventional gallium-oxide (Ga2O3) Schottky barrier diode (SBD), conventional Ga2O3 heterojunction diode (HJD), and Ga2O3 HJD with a p-NiO junction termination extension (JTE) and a small-angle beveled field plate (BFP). The employed simulation physics models and material parameters are validated by the reverse I-V characteristics in experiments. The simulation results of SEB failure mechanism and threshold voltage in the conventional Ga2O3 SBD are proved by the chlorine (Cl) ion irradiation tests. The most sensitive position and the ion range influence to induce an SEB are discussed. Then, the SEB failure mechanism and threshold voltage of conventional Ga2O3 HJD are comparatively investigated based on the Cl ion strike. Although, the conventional HJD presents much better SEB performance than conventional SBD in anode position, the anode edge of HJD is proved to be very sensitive to an ion. Therefore, the Ga2O3 HJD with JTE and BFP, which can significantly suppress the peak electric field strength at the anode edge, is investigated that has better SEB performance than the conventional SBD and HJD under different ion species.

Published
2024
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8. Effect of lignin polyphenols and copper-zinc cross-linking substance combined supplementation on growth performance, immunity and copper, zinc deposition of weaned piglets.

Author

ZHANG Wei, JIA Zeng-hao, HAN Shuai-juan, GUO Hao-min, CHEN Sai-juan, and CHEN Bao-jiang

Subjects
COPPER, PIGLETS, LIGNINS, POLYPHENOLS, LIGNIN structure, MATERNALLY acquired immunity, ZINC, DIETARY supplements, ZINC supplements
Abstract

The study was to investigate the effect of lignin polyphenols and copper-zinc cross-linking substance combined supplementation on growth performance, immunity and copper, zinc deposition of weaned piglets. Ninety-six healthy weaned piglets (Duroc x Landrace x Yorkshire) with similar body weight were selected and randomly divided into three groups, with four replicates in each group and eight pigs in each replicate. The control group piglets were fed with basal diet + 2 kg/t zinc oxide + 100 g/t chlortetracycline + 40 g/t colistin, T1 group piglets were fed with basal diet + 1 kg/t lignin polyphenols + 700 g/t copper-zinc cross-linking substance, T2 group piglets were fed with basal diet + 2 kg/t lignin polyphenols + 700 g/t copper-zinc cross-linking substance. The pre-feeding period lasted for 7 d, the formal experiment lasted for 28 d. The results showed that compared with control group, the average daily feed intake and average daily gain of piglets in T2 group were slightly increased ( P>0.05), the average daily feed intake of T1 group was significantly decreased (P<0.05). There was no significant difference in feed to gain ratio and diarrhea rate of piglets among all groups (P>0.05). Compared with control group, the content of IFN-γ in serum of piglets in T1 group was significantly decreased (P<0.05). Compared with control group and T1 group, the content of C4 in serum of piglets in T2 group was significantly increased and significantly higher than that in T1 group ( P<0.05), the content of DLA in serum of piglets in T2 group was significantly decreased and significantly lower than that in T1 group (P<0.05). Compared with control group, the content of zinc in serum and feces of piglets in T1 group and T2 group were significantly decreased ( P<0.05). The study indicates that the combined addition of 2 kg/t lignin polyphenols and 700 g/t copper-zinc cross-linking substance to weaned piglet diet to replace the combination of high zinc and antibiotics can maintain the normal growth performance of weaned piglets, improve immunity, significantly reduce the excretion of zinc in the feces. [ABSTRACT FROM AUTHOR]

Published
2023
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12. Band structure and optical absorption in InAs/GaSb quantum well

Author

Wang Yu-Qi, Liu Zhu, Guo Hao-Min, and Zhao Zhi-Fei

Subjects
Condensed Matter::Materials Science, Materials science, General Physics and Astronomy, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Electronic band structure, Absorption (electromagnetic radiation), Molecular physics, Quantum well
Abstract

An analysis of band structure, wave function distribution and absorption of linearly polarized light along the [110] direction in InAs/GaSb quantum well grown along the [001] direction is performed by the eight-band K-P model and finite difference method. Our study shows that the band structure and wave function distribution could be regulated effectively by changing the thickness of InAs or GaSb layer. When the bottom of conduction subband and the top of the valence subband are in resonance, the hybridization of ground electron and light-hole state at the zone-center is very weak, and the overlap between the wave function of the ground and the first-excited electron state is considerable, according to the theory of wave function engineering, so the transition rate between the ground and the first-excited electron state at the zone-center is larger than that when the bottom of conduction subband and the top of the valence subband are not in resonance. This is very important for designing advanced optoelectronic devices such as far-infrared or mid-infrared cascade lasers and detecters based on InAs/GaSb quantum wells.

Published
2012
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13. The study of defects in Ga0.946Mn0.054As by X-ray absorption spectra

Author

Xiao Zheng-Guo, Guo Hao-Min, Cao Xian-Cun, Wang Yu-Qi, Shi Tong-Fei, and Qiao Yuan-Yuan

Subjects
Materials science, Absorption spectroscopy, Analytical chemistry, X-ray, General Physics and Astronomy
Abstract

The influence of the major compensating defects As antisites (AsGa) and Mn interstitials (MnI) in the Ga0.946Mn0.054As diluted magnetic semiconductor (DMS) were studied by X-ray absorption spectra (XAS). The experimental results show that the defects in Ga0.946Mn0.054As grown at lower temperature (TS=200℃) is mainly AsGa, but at TS>230℃ MnI is the major defects. On the other hand, a higher LT-annealing temperature (250℃) can remove MnI out of the Ga0.946Mn0.054As lattice, and the highest Curie temperature (TC=130 K) is reached. Moreover, it is indicated that the LT-annealing process can increase the number of MnGa atoms by reducing the concentration of AsGa defects and driving MnI defects to fill up the holes left by AsGa.

Published
2011
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14. Tunable Ferromagnetism above Room-Temperature in Self-Assembled (In,Mn)As Diluted Magnetic Semiconductor Quantum Dots on Be-Doped AlxGa1-XAs Template by Molecular Beam Epitaxy

Author

Guo, Hao Min, Li, Xin Hua, Zhao, Zhi Fei, and Wang, Yu Qi

Abstract

With the introduction of Be-doped AlxGa1-xAs template, self-assembled In0.79Mn0.21As quantum dots samples were prepared on semi-insulating (001) GaAs substrates by molecular beam epitaxy. High quantum dots density was confirmed by the atomic force microscopy. The ferromagnetism of the samples was revealed by superconducting quantum interference device magnetometer analysis at 10K, and the Curie temperatures ranging from 292 to 314K were able to be regulated by adjusting Al content and Be dopant in Be-doped AlxGa1-xAs templates, implying the feasible application of spintronic devices.

Published
2012
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